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FZ1000R33HE3BPSA1

Infineon Technologies

FZ1000R33HE3BPSA1 by Infineon Technologies

Infineon's FZ1000R33HE3BPSA1 is a N-CHANNEL IGBT with 2 elements in parallel. It has a max collector current of 1000A and turn off time of 3550ns, suitable for power control applications. The transistor operates at a max voltage of 3300V, featuring silicon material and isolated case connection.

Median Price

$1,219.300

Lifecycle Status

Suppliers In-Stock

6

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 45 parts In-Stock

1+ parts

$1,166.800

100+ parts

$1,096.790

1k+ parts

$1,026.780

10k+ parts

-

45

$1,166.800

$1,096.790

$1,026.780

-

DigiKey

USA . 2 parts In-Stock

1+ parts

$1,219.300

100+ parts

-

1k+ parts

-

10k+ parts

-

2

$1,219.300

-

-

-

Verical

USA . 30 parts In-Stock

1+ parts

$1,458.500

100+ parts

$1,370.987

1k+ parts

$1,283.475

10k+ parts

-

30

$1,458.500

$1,370.987

$1,283.475

-

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 730 parts In-Stock

1+ parts

$1,474.590

100+ parts

-

1k+ parts

-

10k+ parts

-

730

$1,474.590

-

-

-

Nova Conductors

Japan . 39 parts In-Stock

1+ parts

$1,689.770

100+ parts

-

1k+ parts

-

10k+ parts

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39

$1,689.770

-

-

-

Vyrian

USA . 7,185 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

7,185

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Aztec Data Supply Inc.

USA . 3,361 parts In-Stock

1+ parts

$0.924

100+ parts

-

1k+ parts

-

10k+ parts

-

3,361

$0.924

-

-

-

Corohmni

South Africa . 169 parts In-Stock

1+ parts

$1.708

100+ parts

-

1k+ parts

-

10k+ parts

-

169

$1.708

-

-

-

Benley Electronics

USA . 1 parts In-Stock

1+ parts

$1.750

100+ parts

-

1k+ parts

-

10k+ parts

-

1

$1.750

-

-

-

Modulus Dynamics

Lithuania . 16,478 parts In-Stock

1+ parts

$1.935

100+ parts

$1.858

1k+ parts

$1.780

10k+ parts

-

16,478

$1.935

$1.858

$1.780

-

AZTECH Wire

Italy . 572 parts In-Stock

1+ parts

$10.457

100+ parts

-

1k+ parts

-

10k+ parts

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572

$10.457

-

-

-

Ampacity Inc.

Singapore . 1 parts In-Stock

1+ parts

$1,319.370

100+ parts

-

1k+ parts

-

10k+ parts

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1

$1,319.370

-

-

-

Corphita

USA . 557 parts In-Stock

1+ parts

$1,396.980

100+ parts

-

1k+ parts

-

10k+ parts

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557

$1,396.980

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Microchip USA

USA . 3,026 parts In-Stock

1+ parts

$1,652.040

100+ parts

-

1k+ parts

-

10k+ parts

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3,026

$1,652.040

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-

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Continental Prestige Electronics

USA . 6,945 parts In-Stock

1+ parts

$1,689.770

100+ parts

-

1k+ parts

-

10k+ parts

$1,655.975

6,945

$1,689.770

-

-

$1,655.975

Argo Parts USA

USA . 3,182 parts In-Stock

1+ parts

$1,689.770

100+ parts

$1,672.872

1k+ parts

$1,655.975

10k+ parts

$1,639.077

3,182

$1,689.770

$1,672.872

$1,655.975

$1,639.077

Netroflash

USA . 500 parts In-Stock

1+ parts

$1,689.770

100+ parts

-

1k+ parts

$1,605.282

10k+ parts

$1,571.486

500

$1,689.770

-

$1,605.282

$1,571.486

Eastek

USA . 8 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

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8

-

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Overview

Unleash the power of innovation with the FZ1000R33HE3BPSA1 by Infineon Technologies. As a leader in the industry, Infineon Technologies is known for delivering top-quality products that set new standards in performance and reliability. The FZ1000R33HE3BPSA1 is an Insulated Gate Bipolar Transistor (IGBT) designed for power control applications, featuring N-CHANNEL polarity and a parallel configuration with 2 elements equipped with built-in diodes. With a maximum collector-emitter voltage of 3300V and a nominal turn off time of 3550ns, this transistor offers unmatched efficiency and durability. Elevate your projects with the FZ1000R33HE3BPSA1 and experience the difference that superior quality makes.

Feature Benefit Bullets

Polarity or Channel Type: N-CHANNEL

N-CHANNEL IGBTs are known for their high input impedance and fast switching speed, making them suitable for power control applications.

Configuration: PARALLEL, 2 ELEMENTS WITH BUILT-IN DIODE

The parallel configuration with built-in diode allows for efficient current flow and protection against reverse polarity, ensuring reliable operation.

Transistor Application: POWER CONTROL

Designed specifically for power control applications, this IGBT can handle high voltages and currents with precision and efficiency.

Package Shape: RECTANGULAR

The rectangular package shape provides ease of mounting and thermal management, optimizing performance in various power control systems.

Nominal Turn Off Time (toff): 3550 ns

The fast turn off time of 3550 ns ensures quick switching and minimizes power losses, making it suitable for high-frequency power control applications.

No. of Terminals: 7

Having 7 terminals allows for easy connection and integration into power control circuits, providing flexibility in design and implementation.

Maximum Collector-Emitter Voltage: 3300 V

With a high maximum collector-emitter voltage of 3300 V, this IGBT can handle high voltage spikes and surges, ensuring reliable operation in demanding environments.

Maximum Collector Current (IC): 1000 A

The high maximum collector current rating of 1000 A allows for the handling of large current loads, making it suitable for high-power applications.

Terminal Position: UPPER

The upper terminal position simplifies the layout and connection of the IGBT in power control circuits, improving usability and convenience.

Case Connection: ISOLATED

The isolated case connection provides electrical insulation and safety, reducing the risk of short circuits and enhancing the overall reliability of the IGBT.

Nominal Turn On Time (ton): 1150 ns

The fast turn on time of 1150 ns ensures quick response and precise control, enhancing the efficiency and performance of power control operations.

Technical Specifications

Insulated Gate Bipolar Transistors (IGBT) FZ1000R33HE3BPSA1 attributes and parameters. Explore more Insulated Gate Bipolar Transistors (IGBT) devices from Infineon Technologies

Specs

Case Connection:

ISOLATED

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

3300 V

JESD-30 Code:

R-XUFM-X7

No. of Elements:

2

No. of Terminals:

7

Package Body Material:

UNSPECIFIED

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Peak Reflow Temperature (C):

NOT SPECIFIED

Polarity or Channel Type:

Surface Mount:

NO

Terminal Form:

UNSPECIFIED

Terminal Position:

UPPER

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Transistor Application:

POWER CONTROL

Transistor Element Material:

SILICON

Nominal Turn Off Time (toff):

3550 ns

Nominal Turn On Time (ton):

1150 ns

Trade Compliance

FZ1000R33HE3BPSA1 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Infineon Technologies

Infineon Technologies AG is a leading global semiconductor manufacturer and provider of comprehensive solutions for automotive, industrial, and consumer applications. Founded in 1999, the company has grown to become one of the largest semiconductor manufacturers in Europe. Infineon is headquartered in Neubiberg, Germany with operations across countries in Europe and Asia Pacific. Infineon provides microelectronics products that address many of today's societal challenges affecting energy efficiency, mobility, security and connectivity. Over the past two decades Infineon has become a major player in the semiconductor industry with an impressive portfolio of innovative technologies. As one of only four companies that produce DRAM chips for automobiles, Infineon produces cutting-edge processors for use in advanced driver assistance systems (ADAS). Likewise, they specialize in providing advanced embedded secure microcontrollers that are essential for connected devices. Furthermore, they offer integrated circuit solutions for industrial power control such as motor controllers and embedded gate drivers.

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Management team

CEO

Jochen Hanebeck

Chief Financial Officer

Sven Schneider

Chief Marketing Officer

Andreas Urschitz

Manufacturer fab locations 19

Fab name Location Fab Initiation Wafer Capacity

Villach 300mm

Fabrication

Fab Initiation

2011

Austria

Villach

Wafer Capacity

11,000

2011

11,000

Kulim 2

Fabrication

Fab Initiation

2016

Malaysia

Kulim

Wafer Capacity

79,500

2016

79,500

Dresden - Module 3

Fabrication

Fab Initiation

1999

Germany

Dresden

Wafer Capacity

58,000

1999

58,000

Villach Building

Fabrication

Fab Initiation

2016

Austria

Villach

Wafer Capacity

2,000

2016

2,000

Regensburg

Fabrication

Fab Initiation

1986

Germany

Regensburg

Wafer Capacity

60,000

1986

60,000

Dresden 200 - Module 1

Fabrication

Fab Initiation

1995

Germany

Dresden

Wafer Capacity

28,000

1995

28,000

Dresden 200 - Module 2

Fabrication

Fab Initiation

1996

Germany

Dresden

Wafer Capacity

28,000

1996

28,000

Building 38

Fabrication

Fab Initiation

2005

Germany

Dresden

Wafer Capacity

500

2005

500

Building 47

Fabrication

Fab Initiation

2005

Germany

Dresden

Wafer Capacity

500

2005

500

Kulim 1

Fabrication

Fab Initiation

2006

Malaysia

Kulim

Wafer Capacity

110,000

2006

110,000

Mesa Facility

Fabrication

Fab Initiation

1990

USA

Mesa

Wafer Capacity

3,000

1990

3,000

Villach 150mm

Fabrication

Fab Initiation

1981

Austria

Villach

Wafer Capacity

35,000

1981

35,000

Villach 200mm

Fabrication

Fab Initiation

1995

Austria

Villach

Wafer Capacity

68,000

1995

68,000

Temecula

Fabrication

Fab Initiation

1995

USA

Temecula

Wafer Capacity

30,000

1995

30,000

Villach 300mm

Fabrication

Fab Initiation

2021

Austria

Villach

Wafer Capacity

2021

Villach 150mm

Fabrication

Fab Initiation

2018

Austria

Villach

Wafer Capacity

5,000

2018

5,000

Kulim 3

Fabrication

Fab Initiation

2024

Malaysia

Kulim

Wafer Capacity

2024

Fab 25

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

31,000

1995

31,000

Dresden - Module 4

Fabrication

Fab Initiation

2026

Germany

Dresden

Wafer Capacity

2026

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