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IFF600B12ME4PB11BPSA1

Infineon Technologies

IFF600B12ME4PB11BPSA1 by Infineon Technologies

Infineon Technologies IFF600B12ME4PB11BPSA1 is a N-CHANNEL IGBT with 2 elements, built-in diode, and thermistor. It has a max Vce of 1200V, toff of 750ns, and ton of 250ns. Ideal for power control applications due to UL recognition and isolated case connection.

Median Price

$208.820

Lifecycle Status

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12

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1k+

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Future Electronics

Canada . 1 parts In-Stock

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$165.740

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$157.850

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$165.740

$157.850

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Rochester

USA . 121 parts In-Stock

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$167.480

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$157.430

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$147.380

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$167.480

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$147.380

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Mouser Electronics

USA . 12 parts In-Stock

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$208.820

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$208.820

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DigiKey

USA . 121 parts In-Stock

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$218.550

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Arrow

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$222.950

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Chip1Stop

Japan . 2 parts In-Stock

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Verical

USA . 113 parts In-Stock

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$205.438

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$192.325

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Digiode

USA . 839 parts In-Stock

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$200.773

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TodayComponents

USA . 100 parts In-Stock

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$268.160

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$242.390

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Nova Conductors

Japan . 900 parts In-Stock

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$368.435

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Vyrian

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Modulus Dynamics

Lithuania . 8,736 parts In-Stock

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$0.714

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$0.685

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$0.657

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8,736

$0.714

$0.685

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Aztec Data Supply Inc.

USA . 205 parts In-Stock

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$0.980

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$0.980

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Corohmni

South Africa . 351 parts In-Stock

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$1.894

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AZTECH Wire

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$162.430

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$158.369

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$157.557

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Corphita

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Advanced Electronics

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$305.619

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$305.619

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$305.619

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Continental Prestige Electronics

USA . 6,505 parts In-Stock

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$368.435

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$361.066

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Argo Parts USA

USA . 1,637 parts In-Stock

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$368.435

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$364.751

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$361.066

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$357.382

1,637

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$364.751

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$357.382

Ampacity Inc.

Singapore . 34 parts In-Stock

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$390.980

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Microchip USA

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Authorized Procurement Solutions

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Perfect Parts

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Overview

Elevate your power control applications with the IFF600B12ME4PB11BPSA1 by Infineon Technologies. As a leading manufacturer of Insulated Gate Bipolar Transistors (IGBT), Infineon delivers unmatched quality and reliability. With its N-CHANNEL configuration, SERIES CONNECTED design, and built-in diode current sensing resistor and thermistor, this transistor offers efficient power control solutions. Whether you're in the automotive, industrial, or renewable energy sector, this IGBT provides high performance and precise control. Trust Infineon to bring value, benefits, and advantages to your projects with the IFF600B12ME4PB11BPSA1.

Feature Benefit Bullets

Polarity or Channel Type: N-CHANNEL

N-CHANNEL IGBTs generally have lower on-state voltage drop and higher switching speed, making them efficient for power control applications.

Configuration: SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE CURRENT SENSING RESISTOR AND THERMISTOR

This configuration provides enhanced protection and control features, making the IGBTs suitable for applications where precise current sensing and temperature monitoring are required.

Transistor Application: POWER CONTROL

Designed specifically for power control applications, these IGBTs offer reliable switching capabilities and efficient power management.

Package Shape: RECTANGULAR

The rectangular package shape allows for easy mounting and integration into existing systems or circuits.

Nominal Turn Off Time (toff): 750 ns

The relatively fast turn-off time of 750 ns ensures efficient switching performance and reduces power loss during the switching process.

No. of Terminals: 13

With 13 terminals, these IGBTs provide versatile connectivity options for various circuit configurations and control requirements.

Maximum Collector-Emitter Voltage: 1200 V

The high maximum voltage rating of 1200 V allows these IGBTs to handle high power levels and voltage spikes, ensuring reliable operation in demanding applications.

Transistor Element Material: SILICON

Silicon is a common and reliable semiconductor material, offering good thermal and electrical properties for stable and efficient transistor performance.

Minimum Operating Temperature: -40 °C

The wide temperature range of -40°C allows these IGBTs to operate in harsh environments or at lower temperatures without compromising performance.

Nominal Turn On Time (ton): 250 ns

The fast turn-on time of 250 ns enables quick switching and reduced power loss, enhancing the efficiency of power control and management.

Reference Standard: UL RECOGNIZED

Being UL recognized ensures compliance with safety and quality standards, making these IGBTs suitable for commercial and industrial applications where regulatory approvals are required.

Technical Specifications

Insulated Gate Bipolar Transistors (IGBT) IFF600B12ME4PB11BPSA1 attributes and parameters. Explore more Insulated Gate Bipolar Transistors (IGBT) devices from Infineon Technologies

Specs

Case Connection:

ISOLATED

Maximum Collector-Emitter Voltage:

1200 V

JESD-30 Code:

R-XUFM-X13

No. of Elements:

2

No. of Terminals:

13

Minimum Operating Temperature:

-40 Cel

Package Body Material:

UNSPECIFIED

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Peak Reflow Temperature (C):

NOT SPECIFIED

Polarity or Channel Type:

Reference Standard:

UL RECOGNIZED

Surface Mount:

NO

Terminal Form:

UNSPECIFIED

Terminal Position:

UPPER

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Transistor Application:

POWER CONTROL

Transistor Element Material:

SILICON

Nominal Turn Off Time (toff):

750 ns

Nominal Turn On Time (ton):

250 ns

Trade Compliance

IFF600B12ME4PB11BPSA1 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Infineon Technologies

Infineon Technologies AG is a leading global semiconductor manufacturer and provider of comprehensive solutions for automotive, industrial, and consumer applications. Founded in 1999, the company has grown to become one of the largest semiconductor manufacturers in Europe. Infineon is headquartered in Neubiberg, Germany with operations across countries in Europe and Asia Pacific. Infineon provides microelectronics products that address many of today's societal challenges affecting energy efficiency, mobility, security and connectivity. Over the past two decades Infineon has become a major player in the semiconductor industry with an impressive portfolio of innovative technologies. As one of only four companies that produce DRAM chips for automobiles, Infineon produces cutting-edge processors for use in advanced driver assistance systems (ADAS). Likewise, they specialize in providing advanced embedded secure microcontrollers that are essential for connected devices. Furthermore, they offer integrated circuit solutions for industrial power control such as motor controllers and embedded gate drivers.

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Management team

CEO

Jochen Hanebeck

Chief Financial Officer

Sven Schneider

Chief Marketing Officer

Andreas Urschitz

Manufacturer fab locations 19

Fab name Location Fab Initiation Wafer Capacity

Villach 300mm

Fabrication

Fab Initiation

2011

Austria

Villach

Wafer Capacity

11,000

2011

11,000

Kulim 2

Fabrication

Fab Initiation

2016

Malaysia

Kulim

Wafer Capacity

79,500

2016

79,500

Dresden - Module 3

Fabrication

Fab Initiation

1999

Germany

Dresden

Wafer Capacity

58,000

1999

58,000

Villach Building

Fabrication

Fab Initiation

2016

Austria

Villach

Wafer Capacity

2,000

2016

2,000

Regensburg

Fabrication

Fab Initiation

1986

Germany

Regensburg

Wafer Capacity

60,000

1986

60,000

Dresden 200 - Module 1

Fabrication

Fab Initiation

1995

Germany

Dresden

Wafer Capacity

28,000

1995

28,000

Dresden 200 - Module 2

Fabrication

Fab Initiation

1996

Germany

Dresden

Wafer Capacity

28,000

1996

28,000

Building 38

Fabrication

Fab Initiation

2005

Germany

Dresden

Wafer Capacity

500

2005

500

Building 47

Fabrication

Fab Initiation

2005

Germany

Dresden

Wafer Capacity

500

2005

500

Kulim 1

Fabrication

Fab Initiation

2006

Malaysia

Kulim

Wafer Capacity

110,000

2006

110,000

Mesa Facility

Fabrication

Fab Initiation

1990

USA

Mesa

Wafer Capacity

3,000

1990

3,000

Villach 150mm

Fabrication

Fab Initiation

1981

Austria

Villach

Wafer Capacity

35,000

1981

35,000

Villach 200mm

Fabrication

Fab Initiation

1995

Austria

Villach

Wafer Capacity

68,000

1995

68,000

Temecula

Fabrication

Fab Initiation

1995

USA

Temecula

Wafer Capacity

30,000

1995

30,000

Villach 300mm

Fabrication

Fab Initiation

2021

Austria

Villach

Wafer Capacity

2021

Villach 150mm

Fabrication

Fab Initiation

2018

Austria

Villach

Wafer Capacity

5,000

2018

5,000

Kulim 3

Fabrication

Fab Initiation

2024

Malaysia

Kulim

Wafer Capacity

2024

Fab 25

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

31,000

1995

31,000

Dresden - Module 4

Fabrication

Fab Initiation

2026

Germany

Dresden

Wafer Capacity

2026

Category top products 20

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