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SKM100GB063D

Semikron International

SKM100GB063D by Semikron International

SKM100GB063D by Semikron is an N-CHANNEL IGBT with 2 SERIES CONNECTED elements. It has a Max VCEsat of 2.5V, Max IC of 130A, and can handle up to 450W power dissipation. Ideal for POWER CONTROL applications due to its fast turn-off time (toff) of 335ns and high collector-emitter voltage of 600V.

Median Price

$83.716

Lifecycle Status

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3

In-Stock Inventory

1k+

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Nova Conductors

Japan . 550 parts In-Stock

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$83.716

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Vyrian

USA . 1,553 parts In-Stock

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ACDS - Activité Composants Distribution Service

France . 60 parts In-Stock

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Distributors (Availability)

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AZTECH Wire

Italy . 280 parts In-Stock

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$6.555

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Aztec Data Supply Inc.

USA . 300 parts In-Stock

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$82.040

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Continental Prestige Electronics

USA . 5,196 parts In-Stock

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$83.716

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$82.042

5,196

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Netroflash

USA . 1,000 parts In-Stock

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$83.716

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Corohmni

South Africa . 897 parts In-Stock

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$83.717

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897

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Advanced Electronics

New Zealand . 5,000 parts In-Stock

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$97.111

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$89.342

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$83.716

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Argo Parts USA

USA . 4,205 parts In-Stock

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Perfect Parts

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Overview

Unlock the power of innovation with the Semikron International SKM100GB063D insulated gate bipolar transistor. Designed with precision and quality in mind, Semikron International is a trusted manufacturer known for delivering top-of-the-line products. The SKM100GB063D is ideal for power control applications, offering a maximum collector-emitter voltage of 600V and a maximum collector current of 130A. With its N-channel configuration and built-in diode, this transistor provides efficient and reliable performance. Trust Semikron International to provide cutting-edge technology that meets your power control needs.

Feature Benefit Bullets

Polarity or Channel Type: N-CHANNEL

N-CHANNEL IGBTs are known for their higher efficiency and faster switching speeds compared to P-CHANNEL IGBTs, making this product a good choice for power control applications.

Maximum VCEsat: 2.5 V

A lower VCEsat value indicates lower power loss during conduction, making this IGBT suitable for high efficiency power control applications.

No. of Elements: 2

Having 2 elements with built-in diode allows for more efficient power control and handling of higher currents.

Maximum Collector-Emitter Voltage: 600 V

The high maximum collector-emitter voltage rating allows for the handling of high voltage applications, making this IGBT suitable for a wide range of power control scenarios.

Maximum Collector Current (IC): 130 A

With a high maximum collector current rating, this IGBT can handle high current flows, making it suitable for power control applications that require handling of large amounts of current.

Technical Specifications

Insulated Gate Bipolar Transistors (IGBT) SKM100GB063D attributes and parameters. Explore more Insulated Gate Bipolar Transistors (IGBT) devices from Semikron International

Specs

Case Connection:

ISOLATED

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

600 V

Maximum Gate-Emitter Voltage:

20 V

JESD-30 Code:

R-XUFM-X7

JESD-609 Code:

e2

No. of Elements:

2

No. of Terminals:

7

Maximum Operating Temperature:

150 Cel

Package Body Material:

UNSPECIFIED

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Reference Standard:

UL RECOGNIZED

Sub-Category:

Insulated Gate BIP Transistors

Surface Mount:

NO

Terminal Finish:

TIN SILVER

Terminal Form:

UNSPECIFIED

Terminal Position:

UPPER

Transistor Application:

POWER CONTROL

Transistor Element Material:

SILICON

Nominal Turn Off Time (toff):

335 ns

Nominal Turn On Time (ton):

90 ns

Maximum VCEsat:

2.5 V

Trade Compliance

SKM100GB063D Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Semikron International

Semikron Danfoss is a family-owned business, merged by SEMIKRON and Danfoss Silicon Power in 2022. In a world that is going electric, Semikron Danfoss technologies are more relevant than ever. With our innovative solutions for automotive, industrial and renewable applications we help the world utilize energy more efficiently and sustainable and thus to significantly reduce overall CO2 emissions – one of the biggest challenges the world faces today. Our power electronics product offerings include semiconductor devices, power modules, stacks and systems. We take care of our employees and create value for our customers by investing significantly in innovation, technology, capacity, and service to deliver best-in-industry performance and for a sustainable future.

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