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IKA10N65ET6XKSA2

Infineon Technologies

IKA10N65ET6XKSA2 by Infineon Technologies

IKA10N65ET6XKSA2 by Infineon Technologies is an N-CHANNEL IGBT with a max VCEsat of 1.9V and a max IC of 25A. It is designed for POWER CONTROL applications, featuring a package style of FLANGE MOUNT and an operating temperature range from -40 to 175 °C.

Median Price

$1.560

Lifecycle Status

Suppliers In-Stock

14

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Farnell

UK . 365 parts In-Stock

1+ parts

$2.050

100+ parts

$0.927

1k+ parts

-

10k+ parts

-

365

$2.050

$0.927

-

-

Mouser Electronics

USA . 530 parts In-Stock

1+ parts

$2.330

100+ parts

$1.470

1k+ parts

$1.290

10k+ parts

$1.270

530

$2.330

$1.470

$1.290

$1.270

Element14

Singapore . 392 parts In-Stock

1+ parts

$2.493

100+ parts

$1.463

1k+ parts

$1.232

10k+ parts

-

392

$2.493

$1.463

$1.232

-

DigiKey

USA . 394 parts In-Stock

1+ parts

$3.140

100+ parts

$1.415

1k+ parts

-

10k+ parts

-

394

$3.140

$1.415

-

-

Rochester

USA . 607,907 parts In-Stock

1+ parts

-

100+ parts

$1.320

1k+ parts

$1.100

10k+ parts

$0.977

607,907

-

$1.320

$1.100

$0.977

Verical

USA . 360,875 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$1.375

10k+ parts

$1.221

360,875

-

-

$1.375

$1.221

RS (Exports)

UK . 500 parts In-Stock

1+ parts

-

100+ parts

$1.560

1k+ parts

$1.346

10k+ parts

-

500

-

$1.560

$1.346

-

Chip1Stop

Japan . 332 parts In-Stock

1+ parts

-

100+ parts

$1.360

1k+ parts

$0.984

10k+ parts

-

332

-

$1.360

$0.984

-

Arrow

USA . 300 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$1.087

10k+ parts

$1.052

300

-

-

$1.087

$1.052

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Nova Conductors

Japan . 10 parts In-Stock

1+ parts

$0.647

100+ parts

-

1k+ parts

-

10k+ parts

-

10

$0.647

-

-

-

Digiode

USA . 327 parts In-Stock

1+ parts

$0.721

100+ parts

-

1k+ parts

-

10k+ parts

-

327

$0.721

-

-

-

TME

Poland . 56 parts In-Stock

1+ parts

$1.660

100+ parts

$1.320

1k+ parts

$1.140

10k+ parts

-

56

$1.660

$1.320

$1.140

-

Chip Stock

USA . 10,500 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

10,500

-

-

-

-

Vyrian

USA . 8,930 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

8,930

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Netroflash

USA . 100 parts In-Stock

1+ parts

$0.647

100+ parts

-

1k+ parts

$0.614

10k+ parts

$0.601

100

$0.647

-

$0.614

$0.601

Argo Parts USA

USA . 54 parts In-Stock

1+ parts

$0.647

100+ parts

-

1k+ parts

-

10k+ parts

$0.627

54

$0.647

-

-

$0.627

Ampacity Inc.

Singapore . 450 parts In-Stock

1+ parts

$0.650

100+ parts

-

1k+ parts

-

10k+ parts

-

450

$0.650

-

-

-

Modulus Dynamics

Lithuania . 21,944 parts In-Stock

1+ parts

$0.652

100+ parts

$0.626

1k+ parts

$0.600

10k+ parts

-

21,944

$0.652

$0.626

$0.600

-

Corphita

USA . 582 parts In-Stock

1+ parts

$0.683

100+ parts

-

1k+ parts

-

10k+ parts

-

582

$0.683

-

-

-

Continental Prestige Electronics

USA . 496 parts In-Stock

1+ parts

$1.380

100+ parts

$0.809

1k+ parts

$0.581

10k+ parts

-

496

$1.380

$0.809

$0.581

-

QUARKTWIN TECHNOLOGY LTD

USA . 23,486 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

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10k+ parts

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23,486

-

-

-

-

Microchip USA

USA . 11,917 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

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11,917

-

-

-

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Perfect Parts

USA . 5,040 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

5,040

-

-

-

-

Authorized Procurement Solutions

USA . 3,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

3,000

-

-

-

-

Overview

Experience the ultimate power control with the IKA10N65ET6XKSA2 by Infineon Technologies. Designed with high-quality materials and advanced technology, this Insulated Gate Bipolar Transistor (IGBT) offers unparalleled performance and reliability. Whether you're looking to enhance your industrial equipment or optimize your power systems, this N-CHANNEL transistor with a built-in diode is the perfect solution. Benefit from its low VCEsat, fast turn-off/on times, and high power dissipation capabilities. Trust in the expertise of Infineon Technologies to deliver cutting-edge solutions for your power control needs.

Feature Benefit Bullets

Package Body Material:

PLASTIC/EPOXY - Provides durability and protection for the internal components of the IGBT.

Polarity or Channel Type:

N-CHANNEL - Offers efficient power control capabilities for a variety of applications.

Configuration:

SINGLE WITH BUILT-IN DIODE - Simplifies circuit design and saves space by integrating a diode within the transistor.

Transistor Application:

POWER CONTROL - Ideal for applications requiring precise control over power consumption.

Maximum VCEsat:

1.9 V - Low voltage drop enhances energy efficiency and reduces power loss in operation.

Package Shape:

RECTANGULAR - Allows for easy integration into existing circuit designs.

Terminal Form:

THROUGH-HOLE - Facilitates secure and reliable connections to a printed circuit board.

Nominal Turn Off Time (toff):

195 ns - Fast turn-off time improves overall performance and efficiency of the IGBT.

No. of Terminals:

3 - Simplifies connection and installation process, making it user-friendly.

Maximum Power Dissipation (Abs):

32.5 W - Capable of handling high power loads without overheating or damage.

Package Style (Meter):

FLANGE MOUNT - Provides stability and durability for mounting the IGBT in various applications.

Maximum Operating Temperature:

175 °C - Ensures reliability and performance under extreme temperature conditions.

Maximum Collector-Emitter Voltage:

650 V - Allows for operation in high voltage applications without risk of damage.

Transistor Element Material:

SILICON - Provides high conductivity and reliability for long-term usage.

Maximum Gate-Emitter Voltage:

20 V - Ensures safe and stable operation of the IGBT under varying conditions.

Minimum Operating Temperature:

40 °C - Capable of functioning in cold environments without compromising performance.

Maximum Collector Current (IC):

25 A - Handles high current levels for demanding power control applications.

Maximum Gate-Emitter Threshold Voltage:

6.4 V - Provides precise control over the switching characteristics of the IGBT.

Terminal Finish:

TIN - Offers corrosion resistance and ensures long-term reliability of terminal connections.

Terminal Position:

SINGLE - Simplifies installation and connection process for the user.

Case Connection:

ISOLATED - Enhances safety and prevents electrical interference in the circuit.

Nominal Turn On Time (ton):

45 ns - Fast turn-on time allows for quick response and effective power control.

Technical Specifications

Insulated Gate Bipolar Transistors (IGBT) IKA10N65ET6XKSA2 attributes and parameters. Explore more Insulated Gate Bipolar Transistors (IGBT) devices from Infineon Technologies

Specs

Case Connection:

ISOLATED

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

650 V

Maximum Gate-Emitter Threshold Voltage:

6.4 V

Maximum Gate-Emitter Voltage:

20 V

JEDEC-95 Code:

TO-220AB

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

175 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Surface Mount:

NO

Terminal Finish:

TIN

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

POWER CONTROL

Transistor Element Material:

SILICON

Nominal Turn Off Time (toff):

195 ns

Nominal Turn On Time (ton):

45 ns

Maximum VCEsat:

1.9 V

Trade Compliance

IKA10N65ET6XKSA2 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Infineon Technologies

Infineon Technologies AG is a leading global semiconductor manufacturer and provider of comprehensive solutions for automotive, industrial, and consumer applications. Founded in 1999, the company has grown to become one of the largest semiconductor manufacturers in Europe. Infineon is headquartered in Neubiberg, Germany with operations across countries in Europe and Asia Pacific. Infineon provides microelectronics products that address many of today's societal challenges affecting energy efficiency, mobility, security and connectivity. Over the past two decades Infineon has become a major player in the semiconductor industry with an impressive portfolio of innovative technologies. As one of only four companies that produce DRAM chips for automobiles, Infineon produces cutting-edge processors for use in advanced driver assistance systems (ADAS). Likewise, they specialize in providing advanced embedded secure microcontrollers that are essential for connected devices. Furthermore, they offer integrated circuit solutions for industrial power control such as motor controllers and embedded gate drivers.

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Management team

CEO

Jochen Hanebeck

Chief Financial Officer

Sven Schneider

Chief Marketing Officer

Andreas Urschitz

Manufacturer fab locations 19

Fab name Location Fab Initiation Wafer Capacity

Villach 300mm

Fabrication

Fab Initiation

2011

Austria

Villach

Wafer Capacity

11,000

2011

11,000

Kulim 2

Fabrication

Fab Initiation

2016

Malaysia

Kulim

Wafer Capacity

79,500

2016

79,500

Dresden - Module 3

Fabrication

Fab Initiation

1999

Germany

Dresden

Wafer Capacity

58,000

1999

58,000

Villach Building

Fabrication

Fab Initiation

2016

Austria

Villach

Wafer Capacity

2,000

2016

2,000

Regensburg

Fabrication

Fab Initiation

1986

Germany

Regensburg

Wafer Capacity

60,000

1986

60,000

Dresden 200 - Module 1

Fabrication

Fab Initiation

1995

Germany

Dresden

Wafer Capacity

28,000

1995

28,000

Dresden 200 - Module 2

Fabrication

Fab Initiation

1996

Germany

Dresden

Wafer Capacity

28,000

1996

28,000

Building 38

Fabrication

Fab Initiation

2005

Germany

Dresden

Wafer Capacity

500

2005

500

Building 47

Fabrication

Fab Initiation

2005

Germany

Dresden

Wafer Capacity

500

2005

500

Kulim 1

Fabrication

Fab Initiation

2006

Malaysia

Kulim

Wafer Capacity

110,000

2006

110,000

Mesa Facility

Fabrication

Fab Initiation

1990

USA

Mesa

Wafer Capacity

3,000

1990

3,000

Villach 150mm

Fabrication

Fab Initiation

1981

Austria

Villach

Wafer Capacity

35,000

1981

35,000

Villach 200mm

Fabrication

Fab Initiation

1995

Austria

Villach

Wafer Capacity

68,000

1995

68,000

Temecula

Fabrication

Fab Initiation

1995

USA

Temecula

Wafer Capacity

30,000

1995

30,000

Villach 300mm

Fabrication

Fab Initiation

2021

Austria

Villach

Wafer Capacity

2021

Villach 150mm

Fabrication

Fab Initiation

2018

Austria

Villach

Wafer Capacity

5,000

2018

5,000

Kulim 3

Fabrication

Fab Initiation

2024

Malaysia

Kulim

Wafer Capacity

2024

Fab 25

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

31,000

1995

31,000

Dresden - Module 4

Fabrication

Fab Initiation

2026

Germany

Dresden

Wafer Capacity

2026

Category top products 20

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