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NGTG15N60S1EG

Onsemi

NGTG15N60S1EG by Onsemi

NGTG15N60S1EG by Onsemi is an N-CHANNEL IGBT transistor with a max collector-emitter voltage of 650V and a max collector current of 30A. It is commonly used in motor control applications due to its nominal turn on time of 93ns and max power dissipation of 117W.

Median Price

$0.850

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

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Nova Conductors

Japan . 89 parts In-Stock

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Vyrian

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Digiode

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Corohmni

South Africa . 241 parts In-Stock

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$0.833

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Continental Prestige Electronics

USA . 6,332 parts In-Stock

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Argo Parts USA

USA . 2,797 parts In-Stock

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Netroflash

USA . 500 parts In-Stock

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Advanced Electronics

New Zealand . 40 parts In-Stock

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$2.354

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$2.142

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$1.930

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AZTECH Wire

Italy . 842 parts In-Stock

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$9.674

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Ampacity Inc.

Singapore . 624 parts In-Stock

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Lixinc

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Perfect Parts

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TANS Electronics

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Kulean Microsystems

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Corphita

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UHIMA Technologies

Türkiye . 874 parts In-Stock

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SupplyDigital Components

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Kepictronics

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Overview

Experience the power and reliability of Onsemi's NGTG15N60S1EG Insulated Gate Bipolar Transistor (IGBT). Designed with precision and crafted with the highest quality materials, this N-CHANNEL single configuration transistor is perfect for motor control applications. Its rectangular shape and through-hole terminal form make installation a breeze. With a maximum collector-emitter voltage of 650V, maximum gate-emitter voltage of 20V, and maximum collector current of 30A, this IGBT ensures optimal performance and efficiency. Trust Onsemi to deliver unparalleled value and benefits to meet all your motor control needs.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy material used for the package body provides durability and protection for the internal components of the IGBT, ensuring reliable performance in various environments.

Configuartion: SINGLE

The single configuration simplifies the setup and operation of the IGBT, making it easier to integrate into motor control applications.

Maximum Power Dissipation (Abs): 117 W

With a high maximum power dissipation, this IGBT can handle significant amounts of power, making it suitable for motor control applications where power requirements are crucial.

Maximum Collector-Emitter Voltage: 650 V

The high collector-emitter voltage rating allows this IGBT to be used in applications that require high voltage handling capabilities, such as motor control systems.

Maximum Collector Current (IC): 30 A

The high maximum collector current rating ensures that this IGBT can handle high current loads, making it ideal for motor control applications where high current flow is needed.

Nominal Turn On Time (ton): 93 ns

The fast turn-on time of 93 ns allows for quick switching of the IGBT, enabling precise control of the motor in motor control applications.

Technical Specifications

Insulated Gate Bipolar Transistors (IGBT) NGTG15N60S1EG attributes and parameters. Explore more Insulated Gate Bipolar Transistors (IGBT) devices from Onsemi

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

650 V

Configuration:

Maximum Gate-Emitter Threshold Voltage:

6.5 V

Maximum Gate-Emitter Voltage:

20 V

JEDEC-95 Code:

TO-220AB

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Sub-Category:

Insulated Gate BIP Transistors

Surface Mount:

NO

Terminal Finish:

TIN

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

MOTOR CONTROL

Transistor Element Material:

SILICON

Nominal Turn Off Time (toff):

440 ns

Nominal Turn On Time (ton):

93 ns

Trade Compliance

NGTG15N60S1EG Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

Category top products 20

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