Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
Discover essential electronic components for your devices, including CPU accelerators, system cache controllers, computer processors, motherboards, and graphics computing systems. Enhance device performance and connectivity with reliable components engineered for seamless integration and optimal functionality.
Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
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N-CHANNEL; Configuration: SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND CUR LIMITING CIRCUIT; Surface Mount: NO; Maximum Collector Current (IC): 150 A; JESD-30 Code: R-XUFM-X7; Package Style (Meter): FLANGE MOUNT;
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Insulated Gate Bipolar Transistors (IGBT) 2MBI150NC-120 attributes and parameters. Explore more Insulated Gate Bipolar Transistors (IGBT) devices from Collmer Semiconductor
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2MBI150NC-120 Transistors trade compliance attributes, and parameters.
ECCN
EAR99
ECCN Governance
EAR
Fuji Electric (Japan) and Collmer Semiconductor (Dallas, TX) announced that the distribution business of Collmer has been acquired by Fuji and will be known as Fuji Semiconductor Inc. The manufacturing division of Collmer Semiconductor will continue under the name of High Voltage Power Systems Inc. Tetsunosuke Ishibashi, executive vice president of Fuji Electric, said, "We expect to make continuing progress in the US market with uninterrupted customer service as we move forward. We welcome the people of Collmer Semiconductor into the Fuji family.
1N4148WS
Diotec Semiconductor Ag
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
SMBJ18CA
Lite-on Semiconductor
TRANS VOLTAGE SUPPRESSOR DIODE; Terminal Position: DUAL; Terminal Form: C BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
2N2222A
Telcom Semiconductor
NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .8 A;
General Semiconductor
1N4148
Semitronics
RECTIFIER DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;
STM8S003F3P6TR
STMicroelectronics
STM8S003F3P6TR by STMicroelectronics is an 8-bit microcontroller with a max clock frequency of 16 MHz. It features 1024 RAM bytes, 128 data EEPROM size, and 5-ch 10-bit ADC channels. Ideal for industrial applications requiring low power mode and connectivity via I2C, SPI, and UART interfaces.
Comset Semiconductors
2902037
Phoenix Contact
MODULAR TERMINAL BLOCK;
STM32F407VGT6
STM32F407VGT6 by STMicroelectronics is a 32-bit microcontroller with 2/3.3V power supplies, 196608 bytes RAM, and 16-Ch 12-Bit ADC channels. It is ideal for industrial applications requiring CAN, ETHERNET, I2C(3), SPI(3), UART(2), USB(2) connectivity and features DMA(16) for efficient data transfer. With a max clock frequency of 50 MHz and operating temperature range of -40 to 85 °C, it offers high performance in a compact package style (14mm x 14mm).
FDLL4148
Onsemi
FDLL4148 by Onsemi is a single rectifier diode with a max reverse recovery time of 0.004 us. With a max forward voltage of 1V and output current of 0.2A, it is ideal for applications requiring fast switching speeds in electronic circuits. The diode's glass package body material and isolated case connection make it suitable for surface mount designs operating at temperatures up to 175°C.
LM358N
Harris Semiconductor
OPERATIONAL AMPLIFIER; Temperature Grade: COMMERCIAL; Terminal Form: THROUGH-HOLE; No. of Terminals: 8; Package Code: DIP; Package Shape: RECTANGULAR;
Central Semiconductor
NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 250 MHz; Transistor Application: SWITCHING; Transistor Element Material: SILICON;
LM555CN
National Semiconductor
PULSE; RECTANGULAR; Temperature Grade: COMMERCIAL; No. of Terminals: 8; Package Code: DIP; Package Shape: RECTANGULAR; Surface Mount: NO;
IRLML6402TRPBF
International Rectifier
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.3 W; Peak Reflow Temperature (C): 260; Package Style (Meter): SMALL OUTLINE;
Jgd Semiconductors
RECTIFIER DIODE; Surface Mount: NO; Maximum Operating Temperature: 175 Cel; Maximum Reverse Recovery Time: .004 us; Maximum Non Repetitive Peak Forward Current: .5 A; Maximum Forward Voltage (VF): 1 V;
08055C104KAT4A
KYOCERA AVX
08055C104KAT4A by KYOCERA AVX is a ceramic capacitor with 0.1uF capacitance, rated for 50V. With X7R temperature characteristics and -55 to 125 °C operating range, it's ideal for SMT applications requiring compact size and high reliability. The wraparound terminals and multi-layer design make it suitable for various electronic circuits.
NC7WZ07P6X
Fairchild Semiconductor
BUFFER; Temperature Grade: INDUSTRIAL; Terminal Form: GULL WING; No. of Terminals: 6; Package Code: TSSOP; Package Shape: RECTANGULAR;
FDC5614P
MSKSEMI SEMICONDUCTOR
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2 W; Transistor Element Material: SILICON; Minimum DS Breakdown Voltage: 60 V;
2N7002
Yangzhou Yangjie Electronics
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; No. of Elements: 1; Terminal Form: GULL WING; Maximum Drain Current (ID): .34 A;
IRG4BC40SPBF
N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 160 W; Maximum Collector Current (IC): 60 A; No. of Terminals: 3;
FF600R12IP4BOSA1
Infineon Technologies
FF600R12IP4BOSA1 by Infineon Technologies is an N-CHANNEL IGBT with 2 SERIES CONNECTED elements, built-in diode, and thermistor. It is designed for POWER CONTROL applications with a max voltage of 1200V and operating temperature of 175°C. Featuring a turn-off time of 1050ns and turn-on time of 370ns, this rectangular package transistor is ideal for high-power systems.
BSM150GB120DLC
Eupec & Kg
N-CHANNEL; Configuration: SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 1200 W; Maximum Collector Current (IC): 300 A; Maximum Operating Temperature: 125 Cel;
BSM150GB120DN2
Infineon's BSM150GB120DN2 is a 1200V IGBT with 3.2V VCEsat, 1250W power dissipation, and 210A collector current. Ideal for high-power applications requiring efficient switching at up to 150°C operating temperature.
FS820R08A6P2BBPSA1
Infineon's FS820R08A6P2BBPSA1 is an N-CHANNEL IGBT with 3 BANKS, SERIES CONNECTED, CENTER TAP configuration. It has 6 elements, 820 A IC, and 714 W power dissipation for POWER CONTROL applications. With VCEsat of 1.35V and toff of 1110ns, it operates b/w -40 to 150 °C effectively.
FD300R06KE3HOSA1
Infineon's FD300R06KE3HOSA1 is an N-CHANNEL IGBT with 600V max. collector-emitter voltage, 400A max. collector current, and 190ns nominal turn on time. Ideal for applications requiring high power switching such as motor drives, renewable energy systems, and industrial automation due to its single configuration with built-in diode and isolated case connection.
FP35R12KT4B15BOSA1
FP35R12KT4B15BOSA1 by Infineon Technologies is an N-CHANNEL IGBT with a max VCEsat of 2.15V and a max power dissipation of 210W. It is commonly used for power control applications due to its high voltage rating (1200V) and fast turn on/off times (210ns/620ns).
APTGT750U60D4G
Microchip Technology
Microchip Technology's APTGT750U60D4G is an N-CHANNEL IGBT for MOTOR CONTROL applications. It features a Max VCEsat of 1.9V, Nominal Turn Off Time of 730ns, and Max Collector Current of 1000A. With a Max Power Dissipation of 2300W and operating temperature up to 175°C, it offers efficient performance in high-power motor control systems.
FGB20N60SFD_F085
FGB20N60SFD_F085 by Fairchild Semiconductor is an N-CHANNEL IGBT with 600V max collector-emitter voltage and 40A max collector current. It has a turn-off time of 123ns and turn-on time of 28ns, suitable for power control applications. The transistor comes in a small outline package with gull wing terminals for surface mount assembly.
FP20R06W1E3BOMA1
FP20R06W1E3BOMA1 by Infineon Technologies is an N-CHANNEL IGBT with 7 elements, designed for POWER CONTROL applications. It features a max Collector-Emitter Voltage of 600V, Nominal Turn Off Time of 250ns, and Max Collector Current of 27A. This COMPLEX transistor has a rectangular package style and operates at temperatures up to 175°C.
STGW19NC60HD
STGW19NC60HD by STMicroelectronics is an N-CHANNEL IGBT with 600V VCE, 42A IC, and 140W Ptot. It's used for power control applications due to its fast turn-off time of 272ns and built-in diode in a rectangular package with through-hole terminals.
FGH40N60SMDF_F085
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 349 W; Maximum Collector Current (IC): 80 A; Peak Reflow Temperature (C): NOT SPECIFIED;
IXBH10N170
Littelfuse
IXBH10N170 by Littelfuse is an N-CHANNEL IGBT with VCEsat of 3.8V, IC of 20A, and VCE of 1700V. Ideal for MOTOR CONTROL applications due to its single configuration with built-in diode. Operates b/w -55 to 150 °C with a power dissipation of 140W in a rectangular package style.
FGH50N6S2D
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 463 W; Maximum Collector Current (IC): 75 A; Qualification: Not Qualified;
HGTG20N60B3D
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 165 W; Maximum Collector Current (IC): 40 A; No. of Terminals: 3;
FF450R12KT4PHOSA1
FF450R12KT4PHOSA1 by Infineon Technologies is an N-CHANNEL IGBT with 2 SERIES CONNECTED elements. It has a Max Collector-Emitter Voltage of 1200V and Nominal Turn Off Time of 720ns, making it ideal for POWER CONTROL applications. The transistor operates at temperatures as low as -40°C and comes in a RECTANGULAR package style with 7 terminals.
FGD4536TM
FGD4536TM by Onsemi is an N-CHANNEL IGBT with a max VCEsat of 1.8V and a max power dissipation of 125W. It is designed for general purpose switching applications, featuring a small outline package style and a max operating temperature of 150°C.
MMIX4B22N300
IXYS Corporation
MMIX4B22N300 by IXYS Corporation is an N-CHANNEL IGBT with a max VCEsat of 2.7V and a max collector-emitter voltage of 3000V. It is used for power control applications and has a small outline package style, making it suitable for surface mount installations.
GT40WR21,Q(O
Toshiba
Toshiba's GT40WR21,Q(O is an N-CHANNEL IGBT with 350 ns fall time, 375 W power dissipation, and 1800 V collector-emitter voltage. Ideal for high-power applications requiring up to 40 A collector current, it operates at a max temperature of 175°C.
IXXH75N60C3
N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 750 W; Maximum Collector Current (IC): 150 A; Case Connection: COLLECTOR;
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2MBI200VA-060-50
Fuji Electric
N-CHANNEL; Configuration: SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Collector Current (IC): 200 A; Package Style (Meter): FLANGE MOUNT; Maximum VCEsat: 2.25 V;
Fujitsu
N-CHANNEL; Configuration: SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Collector Current (IC): 200 A; Package Body Material: UNSPECIFIED; Package Style (Meter): FLANGE MOUNT;
2MBI150NC-120
N-CHANNEL; Configuration: SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND CUR LIMITING CIRCUIT; Surface Mount: NO; Maximum Power Dissipation (Abs): 1100 W; Maximum Collector Current (IC): 150 A; Maximum VCEsat: 3.3 V;
2MBI300U2B-060-50
N-CHANNEL; Configuration: SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 1000 W; Maximum Collector Current (IC): 300 A; Package Shape: RECTANGULAR;
2MBI200UD-120
N-CHANNEL; Configuration: SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Collector Current (IC): 300 A; Maximum Collector-Emitter Voltage: 1200 V; No. of Terminals: 7;
2MBI100VA-060-50
N-CHANNEL; Configuration: SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Collector Current (IC): 100 A; No. of Terminals: 7; Maximum Gate-Emitter Voltage: 20 V;
N-CHANNEL; Configuration: SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Collector Current (IC): 100 A; No. of Terminals: 7; Terminal Position: UPPER;
2MBI1000VXB-170E-50
Insulated Gate Bipolar Transistors; Maximum Collector Current (IC): 1400 A; Maximum Gate-Emitter Voltage: 20 V; No. of Elements: 1; Maximum VCEsat: 2.55 V; Maximum Collector-Emitter Voltage: 1700 V;
2MBI300VH-120-50
N-CHANNEL; Configuration: SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 1600 W; Maximum Collector Current (IC): 360 A; Nominal Turn Off Time (toff): 800 ns;
2MBI400VD-120-50
N-CHANNEL; Configuration: SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Collector Current (IC): 520 A; Package Shape: RECTANGULAR; Transistor Element Material: SILICON;
2MBI450VE-120-50
N-CHANNEL; Configuration: SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 3350 W; Maximum Collector Current (IC): 520 A; Package Shape: RECTANGULAR;
2MBI150NC-060
N-CHANNEL; Configuration: SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND CUR LIMITING CIRCUIT; Surface Mount: NO; Maximum Power Dissipation (Abs): 600 W; Maximum Collector Current (IC): 150 A; Maximum Collector-Emitter Voltage: 600 V;
2MBI150N-060
N-CHANNEL; Configuration: SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND CUR LIMITING CIRCUIT; Surface Mount: NO; Maximum Power Dissipation (Abs): 600 W; Maximum Collector Current (IC): 150 A; Transistor Element Material: SILICON;
2MBI150N-120
N-CHANNEL; Configuration: SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND CUR LIMITING CIRCUIT; Surface Mount: NO; Maximum Power Dissipation (Abs): 1200 W; Maximum Collector Current (IC): 150 A; No. of Elements: 2;
2MBI150NB-120
N-CHANNEL; Configuration: SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND CUR LIMITING CIRCUIT; Surface Mount: NO; Maximum Power Dissipation (Abs): 1200 W; Maximum Collector Current (IC): 150 A; Terminal Form: UNSPECIFIED;
Collmer Semiconductor
N-CHANNEL; Configuration: SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND CUR LIMITING CIRCUIT; Surface Mount: NO; Maximum Collector Current (IC): 150 A; Package Style (Meter): FLANGE MOUNT; Terminal Position: UPPER;
N-CHANNEL; Configuration: SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND CUR LIMITING CIRCUIT; Surface Mount: NO; Maximum Collector Current (IC): 150 A; Package Shape: RECTANGULAR; JESD-30 Code: R-XUFM-X7;
N-CHANNEL; Configuration: SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND CUR LIMITING CIRCUIT; Surface Mount: NO; Maximum Collector Current (IC): 150 A; Maximum Collector-Emitter Voltage: 1200 V; Nominal Turn Off Time (toff): 850 ns;
N-CHANNEL; Configuration: SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND CUR LIMITING CIRCUIT; Surface Mount: NO; Maximum Collector Current (IC): 150 A; Terminal Position: UPPER; Qualification: Not Qualified;
2MBI150NB-060
N-CHANNEL; Configuration: SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND CUR LIMITING CIRCUIT; Surface Mount: NO; Maximum Collector Current (IC): 150 A; Qualification: Not Qualified; Nominal Turn Off Time (toff): 800 ns;
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