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HGTD3N60C3S9A

Intersil

HGTD3N60C3S9A by Intersil

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 33 W; Maximum Collector Current (IC): 6 A; JESD-609 Code: e0;

Median Price

$0.502

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Adafruit Industries

USA . 40 parts In-Stock

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$0.700

100+ parts

$0.637

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$0.574

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$0.700

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$0.574

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Rochester

USA . 8,284 parts In-Stock

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$0.502

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$0.417

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$0.371

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$0.502

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DigiKey

USA . 8,284 parts In-Stock

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$0.430

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Farnell

UK . 8,284 parts In-Stock

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Verical

USA . 2,981 parts In-Stock

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Digiode

USA . 906 parts In-Stock

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Nova Conductors

Japan . 550 parts In-Stock

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American Microsemiconductor Inc.

USA . 6,581 parts In-Stock

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$2.170

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DigiKey Marketplace

USA . 8,284 parts In-Stock

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Vyrian

USA . 5,193 parts In-Stock

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LIBRA Elektronik GmbH

Germany . 1,849 parts In-Stock

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Semicontronic

India . 5,112 parts In-Stock

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$0.290

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$0.283

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$0.281

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Corphita

USA . 242 parts In-Stock

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Argo Parts USA

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$0.397

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$0.385

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Bastille Electronics

Australia . 500 parts In-Stock

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$0.397

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$0.377

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$0.358

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$0.353

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$0.397

$0.377

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$0.353

Component Stockers USA

USA . 8,669 parts In-Stock

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$0.430

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$0.400

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$0.360

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8,669

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Advanced Electronics

New Zealand . 40 parts In-Stock

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$0.637

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$0.574

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Aztec Data Supply Inc.

USA . 3,127 parts In-Stock

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$1.691

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Andel Nordic

Denmark . 3,898 parts In-Stock

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$8.156

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$7.830

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Kepictronics

USA . 27,860 parts In-Stock

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Authorized Procurement Solutions

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Continental Prestige Electronics

USA . 8,284 parts In-Stock

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Supply Digital

USA . 4,101 parts In-Stock

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Glotronic Ltd.

UK . 1,800 parts In-Stock

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Technical Specifications

Insulated Gate Bipolar Transistors (IGBT) HGTD3N60C3S9A attributes and parameters. Explore more Insulated Gate Bipolar Transistors (IGBT) devices from Intersil

Specs

Additional Features:

LOW CONDUCTION LOSS

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

6 A

Maximum Collector-Emitter Voltage:

600 V

Configuration:

Maximum Fall Time (tf):

275 ns

Maximum Gate-Emitter Threshold Voltage:

6 V

Maximum Gate-Emitter Voltage:

20 V

JEDEC-95 Code:

TO-252AA

JESD-30 Code:

R-PSSO-G2

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Insulated Gate BIP Transistors

Surface Mount:

YES

Terminal Finish:

Tin/Lead (Sn/Pb)

Terminal Form:

GULL WING

Terminal Position:

SINGLE

Transistor Application:

MOTOR CONTROL

Transistor Element Material:

SILICON

Nominal Turn Off Time (toff):

455 ns

Nominal Turn On Time (ton):

15 ns

Trade Compliance

HGTD3N60C3S9A Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Intersil

Japanese semiconductor company Renesas acquired Intersil on February 24, 2017. Intersil Corporation (NASDAQ:ISIL), a wholly owned subsidiary of Renesas Electronics Corporation, is a leading provider of innovative power management and precision analog solutions. The company's products form the building blocks of increasingly intelligent, mobile and power hungry electronics enabling advances in power management to improve efficiency and extend battery life. With a deep portfolio of intellectual property and a rich history of design and process innovation, Intersil is the trusted partner to leading companies in some of the world's largest markets, including the industrial and infrastructure, mobile computing, automotive and aerospace.

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