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HGTD3N60A4S

Onsemi

HGTD3N60A4S by Onsemi

The Onsemi HGTD3N60A4S is an N-CHANNEL IGBT transistor with a max VCEsat of 2.7V and a max IC of 17A. It is used for POWER CONTROL applications, featuring a package style of SMALL OUTLINE and operating temperature range from -55 to 150 °C.

Median Price

$0.603

Lifecycle Status

Suppliers In-Stock

5

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 2,005 parts In-Stock

1+ parts

-

100+ parts

$0.581

1k+ parts

$0.482

10k+ parts

$0.430

2,005

-

$0.581

$0.482

$0.430

DigiKey

USA . 2,005 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$0.730

10k+ parts

-

2,005

-

-

$0.730

-

Verical

USA . 2,005 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$0.603

10k+ parts

$0.538

2,005

-

-

$0.603

$0.538

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 2,676 parts In-Stock

1+ parts

$0.397

100+ parts

-

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-

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-

2,676

$0.397

-

-

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Digiode

USA . 2,420 parts In-Stock

1+ parts

$0.453

100+ parts

-

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-

10k+ parts

-

2,420

$0.453

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Corohmni

South Africa . 298 parts In-Stock

1+ parts

$0.397

100+ parts

-

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-

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298

$0.397

-

-

-

Corphita

USA . 607 parts In-Stock

1+ parts

$0.429

100+ parts

-

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607

$0.429

-

-

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Native Components

USA . 656 parts In-Stock

1+ parts

$0.608

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-

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656

$0.608

-

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Northwest PG Solutions

USA . 498 parts In-Stock

1+ parts

$0.669

100+ parts

-

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-

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498

$0.669

-

-

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Andel Nordic

Denmark . 1,240 parts In-Stock

1+ parts

$4.621

100+ parts

-

1k+ parts

$4.436

10k+ parts

$4.436

1,240

$4.621

-

$4.436

$4.436

Kepictronics

USA . 27,860 parts In-Stock

1+ parts

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27,860

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SupplyDigital Components

Austria . 5,416 parts In-Stock

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5,416

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Supply Digital

USA . 4,989 parts In-Stock

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4,989

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Kulean Microsystems

USA . 4,921 parts In-Stock

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4,921

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Continental Prestige Electronics

USA . 2,010 parts In-Stock

1+ parts

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100+ parts

$0.570

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2,010

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$0.570

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Glotronic Ltd.

UK . 1,740 parts In-Stock

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1,740

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Problanco Electronics

Mexico . 1,545 parts In-Stock

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1,545

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TANS Electronics

Latvia . 370 parts In-Stock

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370

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UHIMA Technologies

Türkiye . 317 parts In-Stock

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317

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Overview

Discover the Onsemi HGTD3N60A4S, a high-quality Insulated Gate Bipolar Transistor designed for power control applications. With its N-CHANNEL configuration and impressive maximum operating temperature of 150 °C, this IGBT offers exceptional performance and reliability. Manufactured by Onsemi, a trusted name in semiconductor technology, this transistor guarantees top-notch quality and efficiency. Whether you're working on industrial machinery or renewable energy systems, the HGTD3N60A4S provides the value and benefits you need to take your projects to the next level. Experience the advantages of Onsemi's cutting-edge technology with this powerful transistor.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the internal components, making the product suitable for long-term use in various environments.

Polarity or Channel Type: N-CHANNEL

Offers efficient power control capabilities for a wide range of applications.

Configuration: SINGLE

Simplifies the setup and integration process, ideal for applications requiring a single transistor configuration.

Transistor Application: POWER CONTROL

Designed for power control applications, ensuring reliable and efficient performance.

Surface Mount: YES

Enables easy and convenient mounting on PCBs, saving space and facilitating automated assembly processes.

Maximum Rise Time (tr): 15 ns

Provides fast response time for quick switching, enhancing overall performance.

Maximum VCEsat: 2.7 V

The low VCEsat value helps in reducing power losses and increasing efficiency.

Package Shape: RECTANGULAR

Facilitates easy integration into circuit layouts and reduces space requirements.

Terminal Form: GULL WING

Allows for reliable and secure connections during installation and operation.

Maximum Fall Time (tf): 100 ns

Ensures quick turn-off time for precise control and switching applications.

Nominal Turn Off Time (toff): 180 ns

Provides a balanced turn-off time for efficient power control in various operating conditions.

No. of Terminals: 2

Simplified terminal configuration for easy integration and connection in circuit designs.

Maximum Power Dissipation (Abs): 70 W

Capable of handling high power levels, suitable for demanding applications.

Package Style (Meter): SMALL OUTLINE

Compact design for space-saving installation, especially in densely populated PCBs.

Maximum Operating Temperature: 150 °C

Wide operating temperature range allows for versatile use in different environmental conditions.

Maximum Collector-Emitter Voltage: 600 V

High voltage capability for handling demanding power control tasks.

Transistor Element Material: SILICON

High-quality material for reliable performance and longevity.

Maximum Turn On Time (ton): 23 ns

Quick turn-on time for efficient power delivery and control.

Maximum Gate-Emitter Voltage: 20 V

Sufficient voltage rating for stable and consistent gate control.

Minimum Operating Temperature: -55 °C

Wide temperature range ensures reliable operation in extreme conditions.

Maximum Collector Current (IC): 17 A

High current handling capability for power-intensive applications.

Maximum Gate-Emitter Threshold Voltage: 7 V

The threshold voltage ensures proper gate control for efficient switching.

Maximum Turn Off Time (toff): 265 ns

Balanced turn-off time for controlled power dissipation and switching performance.

Terminal Position: SINGLE

Simplified terminal layout for easy installation and connection.

Case Connection: COLLECTOR

Efficient connection design for seamless integration into power control circuits.

Nominal Turn On Time (ton): 17.5 ns

Quick turn-on time for precise power control and switching applications.

Technical Specifications

Insulated Gate Bipolar Transistors (IGBT) HGTD3N60A4S attributes and parameters. Explore more Insulated Gate Bipolar Transistors (IGBT) devices from Onsemi

Specs

Additional Features:

LOW CONDUCTION LOSS

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

600 V

Configuration:

Maximum Fall Time (tf):

100 ns

Maximum Gate-Emitter Threshold Voltage:

7 V

Maximum Gate-Emitter Voltage:

20 V

JEDEC-95 Code:

TO-252AA

JESD-30 Code:

R-PSSO-G2

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Maximum Rise Time (tr):

15 ns

Surface Mount:

YES

Terminal Form:

GULL WING

Terminal Position:

SINGLE

Transistor Application:

POWER CONTROL

Transistor Element Material:

SILICON

Maximum Turn Off Time (toff):

265 ns

Nominal Turn Off Time (toff):

180 ns

Maximum Turn On Time (ton):

23 ns

Nominal Turn On Time (ton):

17.5 ns

Maximum VCEsat:

2.7 V

Trade Compliance

HGTD3N60A4S Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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