Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
Discover essential electronic components for your devices, including CPU accelerators, system cache controllers, computer processors, motherboards, and graphics computing systems. Enhance device performance and connectivity with reliable components engineered for seamless integration and optimal functionality.
Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
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2PS18012E44G40113NOSA1 by Infineon Technologies is an N-CHANNEL IGBT with 1200V max collector-emitter voltage. Ideal for power control applications, it operates b/w -25°C to 60°C. Featuring a complex configuration and isolated case connection, this microelectronic assembly contains 8 elements made of silicon.
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N-CHANNEL IGBTs have higher electron mobility and lower on-state voltage drop, making them suitable for high power applications.
A complex configuration allows for more precise control over power output, making this IGBT ideal for applications requiring fine-tuned power control.
Designed specifically for power control applications, this IGBT offers efficient and reliable performance in managing high power levels.
The rectangular package shape ensures easy integration and mounting in electronic circuitry, making it convenient to use in various applications.
Having 8 elements allows for higher power handling capacity and improved efficiency in distributing power across different channels.
The microelectronic assembly package style offers compact size and efficient heat dissipation, ideal for space-constrained applications requiring high power control.
With a maximum operating temperature of 60°C, this IGBT can withstand high temperatures and maintain stable performance under demanding conditions.
The high maximum collector-emitter voltage rating of 1200V allows for handling high voltage levels, making this IGBT suitable for high power applications.
Silicon-based transistors offer high breakdown voltage, low on-state losses, and high switching speed, making it a reliable choice for power control applications.
With a minimum operating temperature of -25°C, this IGBT can operate in cold environments without compromising performance, making it versatile for various operating conditions.
An isolated case connection ensures safety and prevents electrical interference, making this IGBT suitable for high power applications where isolation is required.
Insulated Gate Bipolar Transistors (IGBT) 2PS18012E44G40113NOSA1 attributes and parameters. Explore more Insulated Gate Bipolar Transistors (IGBT) devices from Infineon Technologies
Case Connection:
Maximum Collector-Emitter Voltage:
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JESD-30 Code:
No. of Elements:
Maximum Operating Temperature:
Minimum Operating Temperature:
Package Body Material:
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Package Style (Meter):
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2PS18012E44G40113NOSA1 Transistors trade compliance attributes, and parameters.
ECCN
EAR99
ECCN Governance
EAR
PCN Obsolescence/ EOL - Mult Dev EOL 30/Sep/2021 Mult Dev EOL_Revoked 30/Sep/2021
Infineon Technologies AG is a leading global semiconductor manufacturer and provider of comprehensive solutions for automotive, industrial, and consumer applications. Founded in 1999, the company has grown to become one of the largest semiconductor manufacturers in Europe. Infineon is headquartered in Neubiberg, Germany with operations across countries in Europe and Asia Pacific. Infineon provides microelectronics products that address many of today's societal challenges affecting energy efficiency, mobility, security and connectivity. Over the past two decades Infineon has become a major player in the semiconductor industry with an impressive portfolio of innovative technologies. As one of only four companies that produce DRAM chips for automobiles, Infineon produces cutting-edge processors for use in advanced driver assistance systems (ADAS). Likewise, they specialize in providing advanced embedded secure microcontrollers that are essential for connected devices. Furthermore, they offer integrated circuit solutions for industrial power control such as motor controllers and embedded gate drivers.
CEO
Jochen Hanebeck
Chief Financial Officer
Sven Schneider
Chief Marketing Officer
Andreas Urschitz
Villach 300mm
Fabrication
Fab Initiation
2011
Austria
Villach
Wafer Capacity
11,000
Kulim 2
2016
Malaysia
Kulim
79,500
Dresden - Module 3
1999
Germany
Dresden
58,000
Villach Building
2,000
Regensburg
1986
60,000
Dresden 200 - Module 1
1995
28,000
Dresden 200 - Module 2
1996
Building 38
2005
500
Building 47
Kulim 1
2006
110,000
Mesa Facility
1990
USA
Mesa
3,000
Villach 150mm
1981
35,000
Villach 200mm
68,000
Temecula
30,000
2021
2018
5,000
Kulim 3
2024
Fab 25
Austin
31,000
Dresden - Module 4
2026
1N4148
Renesas Technology
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: YES; Package Shape: ROUND;
SMBJ18CA
International Semiconductor
TRANS VOLTAGE SUPPRESSOR DIODE; Surface Mount: YES; Maximum Clamping Voltage: 29.2 V; Nominal Breakdown Voltage: 21.1 V; Maximum Repetitive Peak Reverse Voltage: 18 V; Polarity: BIDIRECTIONAL;
BSS138
Siemens
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .36 W; Maximum Drain-Source On Resistance: 3.5 ohm; Terminal Finish: Tin/Lead (Sn/Pb);
2N2222A
Hi-tron Semiconductor
NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .8 A;
MBRS340T3G
Onsemi
MBRS340T3G by Onsemi is a Schottky rectifier diode with a max forward voltage of 0.5V and output current of 4A. It operates b/w -65°C to 150°C, making it suitable for various applications requiring high-speed switching and low power loss in a small outline package. The diode's matte tin terminal finish and dual position make it ideal for surface mount PCB designs.
NE555D
Philips Semiconductors
Analog Waveform Generation Functions; Temperature Grade: COMMERCIAL; No. of Terminals: 8; Package Code: SOP; Package Shape: RECTANGULAR; Surface Mount: YES;
Gulf Semiconductor
RECTIFIER DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;
American Power Devices
LM358DT
ROHM
OPERATIONAL AMPLIFIER; Temperature Grade: COMMERCIAL; Terminal Form: GULL WING; No. of Terminals: 8; Package Code: LSOP; Package Shape: RECTANGULAR;
LM317T
STMicroelectronics
ADJUSTABLE POSITIVE SINGLE OUTPUT STANDARD REGULATOR; No. of Terminals: 3; Package Code: TO-220; Terminal Form: THROUGH-HOLE; JESD-30 Code: R-XSFM-T3; Minimum Input-Output Voltage Differential: 3 V;
MMBT3904-7-F
Diodes Incorporated
Diodes Inc. MMBT3904-7-F is a NPN BJT transistor for switching applications. Features include VCEsat of 0.3V, hFE of 30, and IC of 0.2A. With a max operating temp of 150°C, it's ideal for small outline SMT designs in automotive electronics.
Multicomp Pro
BAV99
Motorola
RECTIFIER DIODE; Surface Mount: YES; Maximum Output Current: .1 A; Maximum Reverse Recovery Time: .006 us; Maximum Repetitive Peak Reverse Voltage: 70 V; JESD-609 Code: e0;
LM358M
National Semiconductor
OPERATIONAL AMPLIFIER; Temperature Grade: COMMERCIAL; Terminal Form: GULL WING; No. of Terminals: 8; Package Code: SOP; Package Shape: RECTANGULAR;
LM358ADR
Texas Instruments
LM358ADR by Texas Instruments is an operational amplifier with 2 functions, featuring a max input offset voltage of 5000 uV and nominal voltage of 5V. Widely used in applications requiring high voltage gain, it operates within a temperature range of 0-70°C and offers frequency compensation for stability.
SS14
Sangdest Microelectronics (Nanjing)
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: C BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
Leshan Radio
TRANS VOLTAGE SUPPRESSOR DIODE; Terminal Position: DUAL; Terminal Form: C BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
Silicon Standard
LD1117S33TR
LD1117S33TR by STMicroelectronics is a fixed positive single output LDO regulator with a nominal output voltage of 3.3V and max output current of 1.3A. It has a small outline package style, operates at an adjustable temperature range from 0 to 125°C, and is ideal for applications requiring stable voltage regulation in compact electronic devices.
LM555CN
Harris Semiconductor
PULSE; RECTANGULAR; Temperature Grade: COMMERCIAL; No. of Terminals: 8; Package Code: DIP; Package Shape: RECTANGULAR; Surface Mount: NO;
IXGH24N170
IXYS Corporation
N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 250 W; Maximum Collector Current (IC): 50 A; Maximum Collector-Emitter Voltage: 1700 V;
FS450R17KE3
Eupec & Kg
N-CHANNEL; Configuration: 3 BANKS, SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR; Surface Mount: NO; Maximum Collector Current (IC): 605 A; No. of Terminals: 29; Terminal Position: UPPER;
FS150R12KT4BOSA1
Infineon Technologies
FS150R12KT4BOSA1 by Infineon Technologies is an N-CHANNEL IGBT with 6 elements in a bridge configuration. It has a max VCEsat of 2.1V and can handle a collector current of 150A, making it suitable for high-power applications like motor drives and inverters. With a max operating temperature of 150°C and isolated case connection, it ensures reliable performance in demanding environments.
IXXH30N60B3D1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 270 W; Maximum Collector Current (IC): 60 A; Terminal Finish: MATTE TIN;
HGTG40N60B3
Fairchild Semiconductor
N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 290 W; Maximum Collector Current (IC): 70 A; Transistor Application: POWER CONTROL;
APT30GP60BDQ1G
Microsemi
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Collector Current (IC): 100 A; No. of Elements: 1; Terminal Position: SINGLE;
FF450R12KE4EHOSA1
FF450R12KE4EHOSA1 by Infineon Technologies is an N-CHANNEL IGBT with 2 elements and built-in diode. It has a max collector-emitter voltage of 1200V, collector current of 520A, and turn-off time of 800ns. Ideal for power control applications, this transistor operates at temperatures as low as -40°C and is UL approved.
IGW60T120FKSA1
Infineon's IGW60T120FKSA1 is an N-CHANNEL IGBT with 1200V max collector-emitter voltage and 100A max collector current. Ideal for power control applications, it features a single configuration with built-in diode and 730ns turn-off time. The package is rectangular in shape with through-hole terminals.
FGH40N60SFDTU
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 290 W; Maximum Collector Current (IC): 80 A; Case Connection: COLLECTOR;
IXDP20N60BD1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Collector Current (IC): 32 A; Additional Features: HIGH SPEED; Nominal Turn Off Time (toff): 315 ns;
APT45GP120J
Advanced Power Technology
N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 329 W; Maximum Collector Current (IC): 75 A; Package Shape: RECTANGULAR;
IRG4BC30FD1PBF
IRG4BC30FD1PBF by Infineon is an N-CHANNEL IGBT with 600V max collector-emitter voltage and 31A max collector current. It has a 740ns turn off time, ideal for power control applications. The transistor comes in a rectangular package with through-hole terminals and can handle up to 100W of power dissipation at a max operating temperature of 150°C.
IXGN50N120C3H1
Littelfuse
IXGN50N120C3H1 by Littelfuse is an N-CHANNEL IGBT with VCEsat of 4.2V, IC of 95A, and Ptot of 460W. Ideal for power control applications, it operates at -55 to 150°C with a VCEmax of 1200V.
SKIIP13NAB065V1
Semikron International
Semikron International's SKIIP13NAB065V1 is an N-CHANNEL IGBT for POWER CONTROL applications. With 600V VCEsat, 24A IC, and 205ns toff, it offers efficient performance. The FLANGE MOUNT package with 24 terminals and UL RECOGNIZED standard makes it ideal for high-power systems.
HGTD1N120BNS9A
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Collector Current (IC): 5.3 A; JESD-30 Code: R-PSSO-G2; Package Shape: RECTANGULAR;
IRG4BC40SPBF
International Rectifier
N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 160 W; Maximum Collector Current (IC): 60 A; No. of Terminals: 3;
STGW40N120KD
STGW40N120KD by STMicroelectronics is an N-CHANNEL IGBT with 1200V max collector-emitter voltage, 80A max collector current, and 240W max power dissipation. Ideal for motor control applications due to its built-in diode and fast turn-off time of 564ns. Package style is flange mount with through-hole terminals.
HGTG40N60C3
HGTG40N60C3 by Fairchild Semiconductor is an N-CHANNEL IGBT transistor with 600V max collector-emitter voltage, 75A max collector current, and 291W max power dissipation. Ideal for motor control applications due to its fast turn-off time of 460ns and high operating temperature of 150°C.
CM150TX-24S1
Mitsubishi Electric
Mitsubishi Electric's CM150TX-24S1 IGBT is an N-channel transistor with 6 elements, ideal for motor control applications. With a max VCEsat of 2.25V and IC of 150A, it offers efficient power dissipation up to 935W. Operating b/w -40°C to 150°C, it features fast rise/fall times (tr/tf) of 200/300ns for precise control.
FF300R12KS4HOSA1
FF300R12KS4HOSA1 by Infineon Technologies is an N-CHANNEL IGBT with 2 SERIES CONNECTED elements. It has a max voltage of 1200V, max current of 370A, and turn off time of 590ns. Ideal for applications requiring high power switching like industrial motor drives and renewable energy systems.
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2PS13512E43W35222NOSA1
N-CHANNEL; Configuration: COMPLEX; Surface Mount: NO; Package Shape: RECTANGULAR; Terminal Position: UNSPECIFIED; Minimum Operating Temperature: -25 Cel;
2PS18012E44G38553NOSA1
N-CHANNEL; Configuration: COMPLEX; Surface Mount: NO; Terminal Position: UNSPECIFIED; Transistor Element Material: SILICON; JESD-30 Code: R-XXMA-X;
2PS12017E44G35911NOSA1
N-Channel; Maximum Power Dissipation (Abs): 6250 W; Maximum Collector Current (IC): 1700 A; Peak Reflow Temperature (C): NOT SPECIFIED; Nominal Turn On Time (ton): 1060 ns; Nominal Turn Off Time (toff): 2380 ns;
2PS13512E43W35222
N-CHANNEL; Configuration: COMPLEX; Surface Mount: NO; Minimum Operating Temperature: -25 Cel; JESD-30 Code: R-XXMA-X; Package Style (Meter): MICROELECTRONIC ASSEMBLY;
2PS18012E44G38553
N-CHANNEL; Configuration: COMPLEX; Surface Mount: NO; Case Connection: ISOLATED; Peak Reflow Temperature (C): NOT SPECIFIED; Package Style (Meter): MICROELECTRONIC ASSEMBLY;
2PS18012E44G40113
N-CHANNEL; Configuration: COMPLEX; Surface Mount: NO; No. of Elements: 8; Peak Reflow Temperature (C): NOT SPECIFIED; Minimum Operating Temperature: -25 Cel;
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