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2PS18012E44G40113NOSA1

Infineon Technologies

2PS18012E44G40113NOSA1 by Infineon Technologies

2PS18012E44G40113NOSA1 by Infineon Technologies is an N-CHANNEL IGBT with 1200V max collector-emitter voltage. Ideal for power control applications, it operates b/w -25°C to 60°C. Featuring a complex configuration and isolated case connection, this microelectronic assembly contains 8 elements made of silicon.

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4

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1k+

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Vyrian

USA . 4,192 parts In-Stock

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France . 3,393 parts In-Stock

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Digiode

USA . 514 parts In-Stock

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Nova Conductors

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Modulus Dynamics

Lithuania . 15,562 parts In-Stock

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$0.921

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$0.884

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$0.847

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Corohmni

South Africa . 1,242 parts In-Stock

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$1.710

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Aztec Data Supply Inc.

USA . 4,558 parts In-Stock

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$1.800

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AZTECH Wire

Italy . 773 parts In-Stock

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Semicontronic

India . 431 parts In-Stock

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$12.050

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$11.749

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$11.688

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Ampacity Inc.

Singapore . 612 parts In-Stock

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$21.050

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Component Stockers USA

USA . 775 parts In-Stock

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$99.990

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QUARKTWIN TECHNOLOGY LTD

USA . 23,976 parts In-Stock

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Microchip USA

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Argo Parts USA

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Corphita

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Continental Prestige Electronics

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Bastille Electronics

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Overview

Transform the way you power control systems with the 2PS18012E44G40113NOSA1 by Infineon Technologies. This Insulated Gate Bipolar Transistor (IGBT) boasts unmatched quality and reliability from a leading manufacturer in the industry. With applications in power control, this N-CHANNEL transistor offers advanced performance and efficiency. Elevate your projects with the benefits of this complex configuration device, designed to meet your most demanding requirements. Experience the value and advantages that only Infineon Technologies can deliver.

Feature Benefit Bullets

Polarity or Channel Type: N-CHANNEL

N-CHANNEL IGBTs have higher electron mobility and lower on-state voltage drop, making them suitable for high power applications.

Configuration: COMPLEX

A complex configuration allows for more precise control over power output, making this IGBT ideal for applications requiring fine-tuned power control.

Transistor Application: POWER CONTROL

Designed specifically for power control applications, this IGBT offers efficient and reliable performance in managing high power levels.

Package Shape: RECTANGULAR

The rectangular package shape ensures easy integration and mounting in electronic circuitry, making it convenient to use in various applications.

No. of Elements: 8

Having 8 elements allows for higher power handling capacity and improved efficiency in distributing power across different channels.

Package Style (Meter): MICROELECTRONIC ASSEMBLY

The microelectronic assembly package style offers compact size and efficient heat dissipation, ideal for space-constrained applications requiring high power control.

Maximum Operating Temperature: 60 °C

With a maximum operating temperature of 60°C, this IGBT can withstand high temperatures and maintain stable performance under demanding conditions.

Maximum Collector-Emitter Voltage: 1200 V

The high maximum collector-emitter voltage rating of 1200V allows for handling high voltage levels, making this IGBT suitable for high power applications.

Transistor Element Material: SILICON

Silicon-based transistors offer high breakdown voltage, low on-state losses, and high switching speed, making it a reliable choice for power control applications.

Minimum Operating Temperature: -25 °C

With a minimum operating temperature of -25°C, this IGBT can operate in cold environments without compromising performance, making it versatile for various operating conditions.

Case Connection: ISOLATED

An isolated case connection ensures safety and prevents electrical interference, making this IGBT suitable for high power applications where isolation is required.

Technical Specifications

Insulated Gate Bipolar Transistors (IGBT) 2PS18012E44G40113NOSA1 attributes and parameters. Explore more Insulated Gate Bipolar Transistors (IGBT) devices from Infineon Technologies

Specs

Case Connection:

ISOLATED

Maximum Collector-Emitter Voltage:

1200 V

Configuration:

JESD-30 Code:

R-XXMA-X

No. of Elements:

8

Maximum Operating Temperature:

60 Cel

Minimum Operating Temperature:

-25 Cel

Package Body Material:

UNSPECIFIED

Package Shape:

RECTANGULAR

Package Style (Meter):

MICROELECTRONIC ASSEMBLY

Peak Reflow Temperature (C):

NOT SPECIFIED

Polarity or Channel Type:

Surface Mount:

NO

Terminal Form:

UNSPECIFIED

Terminal Position:

UNSPECIFIED

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Transistor Application:

POWER CONTROL

Transistor Element Material:

SILICON

Trade Compliance

2PS18012E44G40113NOSA1 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Infineon Technologies

Infineon Technologies AG is a leading global semiconductor manufacturer and provider of comprehensive solutions for automotive, industrial, and consumer applications. Founded in 1999, the company has grown to become one of the largest semiconductor manufacturers in Europe. Infineon is headquartered in Neubiberg, Germany with operations across countries in Europe and Asia Pacific. Infineon provides microelectronics products that address many of today's societal challenges affecting energy efficiency, mobility, security and connectivity. Over the past two decades Infineon has become a major player in the semiconductor industry with an impressive portfolio of innovative technologies. As one of only four companies that produce DRAM chips for automobiles, Infineon produces cutting-edge processors for use in advanced driver assistance systems (ADAS). Likewise, they specialize in providing advanced embedded secure microcontrollers that are essential for connected devices. Furthermore, they offer integrated circuit solutions for industrial power control such as motor controllers and embedded gate drivers.

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Management team

CEO

Jochen Hanebeck

Chief Financial Officer

Sven Schneider

Chief Marketing Officer

Andreas Urschitz

Manufacturer fab locations 19

Fab name Location Fab Initiation Wafer Capacity

Villach 300mm

Fabrication

Fab Initiation

2011

Austria

Villach

Wafer Capacity

11,000

2011

11,000

Kulim 2

Fabrication

Fab Initiation

2016

Malaysia

Kulim

Wafer Capacity

79,500

2016

79,500

Dresden - Module 3

Fabrication

Fab Initiation

1999

Germany

Dresden

Wafer Capacity

58,000

1999

58,000

Villach Building

Fabrication

Fab Initiation

2016

Austria

Villach

Wafer Capacity

2,000

2016

2,000

Regensburg

Fabrication

Fab Initiation

1986

Germany

Regensburg

Wafer Capacity

60,000

1986

60,000

Dresden 200 - Module 1

Fabrication

Fab Initiation

1995

Germany

Dresden

Wafer Capacity

28,000

1995

28,000

Dresden 200 - Module 2

Fabrication

Fab Initiation

1996

Germany

Dresden

Wafer Capacity

28,000

1996

28,000

Building 38

Fabrication

Fab Initiation

2005

Germany

Dresden

Wafer Capacity

500

2005

500

Building 47

Fabrication

Fab Initiation

2005

Germany

Dresden

Wafer Capacity

500

2005

500

Kulim 1

Fabrication

Fab Initiation

2006

Malaysia

Kulim

Wafer Capacity

110,000

2006

110,000

Mesa Facility

Fabrication

Fab Initiation

1990

USA

Mesa

Wafer Capacity

3,000

1990

3,000

Villach 150mm

Fabrication

Fab Initiation

1981

Austria

Villach

Wafer Capacity

35,000

1981

35,000

Villach 200mm

Fabrication

Fab Initiation

1995

Austria

Villach

Wafer Capacity

68,000

1995

68,000

Temecula

Fabrication

Fab Initiation

1995

USA

Temecula

Wafer Capacity

30,000

1995

30,000

Villach 300mm

Fabrication

Fab Initiation

2021

Austria

Villach

Wafer Capacity

2021

Villach 150mm

Fabrication

Fab Initiation

2018

Austria

Villach

Wafer Capacity

5,000

2018

5,000

Kulim 3

Fabrication

Fab Initiation

2024

Malaysia

Kulim

Wafer Capacity

2024

Fab 25

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

31,000

1995

31,000

Dresden - Module 4

Fabrication

Fab Initiation

2026

Germany

Dresden

Wafer Capacity

2026

Category top products 20

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