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STGE200NB60S

STMicroelectronics

STGE200NB60S by STMicroelectronics

STGE200NB60S by STMicroelectronics is an N-CHANNEL IGBT with 600V VCE, 200A IC, and 1.6V VCEsat. Ideal for POWER CONTROL applications, it has a max power dissipation of 600W and operates up to 150°C.

Median Price

$26.860

Lifecycle Status

Suppliers In-Stock

16

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Farnell

UK . 79 parts In-Stock

1+ parts

$22.070

100+ parts

$15.820

1k+ parts

-

10k+ parts

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79

$22.070

$15.820

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-

Chip1Stop

Japan . 13 parts In-Stock

1+ parts

$26.600

100+ parts

$16.800

1k+ parts

$16.600

10k+ parts

-

13

$26.600

$16.800

$16.600

-

Newark

USA . 127 parts In-Stock

1+ parts

$26.760

100+ parts

$19.170

1k+ parts

-

10k+ parts

-

127

$26.760

$19.170

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-

Mouser Electronics

USA . 94 parts In-Stock

1+ parts

$26.960

100+ parts

$16.280

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-

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94

$26.960

$16.280

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DigiKey

USA . 64 parts In-Stock

1+ parts

$28.000

100+ parts

$16.286

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-

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64

$28.000

$16.286

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-

Arrow

USA . 3,080 parts In-Stock

1+ parts

$30.496

100+ parts

$19.520

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-

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3,080

$30.496

$19.520

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Element14

Singapore . 97 parts In-Stock

1+ parts

$41.400

100+ parts

$27.380

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-

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97

$41.400

$27.380

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Future Electronics

Canada . 199 parts In-Stock

1+ parts

-

100+ parts

$16.840

1k+ parts

$16.590

10k+ parts

-

199

-

$16.840

$16.590

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Avnet

USA . 140 parts In-Stock

1+ parts

-

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140

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Verical

USA . 13 parts In-Stock

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-

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13

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Distributors (In-Stock)

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Digiode

USA . 275 parts In-Stock

1+ parts

$23.684

100+ parts

-

1k+ parts

-

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275

$23.684

-

-

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TME

Poland . 9 parts In-Stock

1+ parts

$24.760

100+ parts

$19.460

1k+ parts

-

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9

$24.760

$19.460

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Nova Conductors

Japan . 71 parts In-Stock

1+ parts

$30.336

100+ parts

-

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71

$30.336

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Vyrian

USA . 6,316 parts In-Stock

1+ parts

-

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6,316

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Anansix

USA . 996 parts In-Stock

1+ parts

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-

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996

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IBS Electronics

USA . 199 parts In-Stock

1+ parts

-

100+ parts

$24.375

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-

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199

-

$24.375

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-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Advanced Electronics

New Zealand . 600 parts In-Stock

1+ parts

$0.371

100+ parts

$0.352

1k+ parts

$0.352

10k+ parts

-

600

$0.371

$0.352

$0.352

-

IDEA Electronic Components Group

UK . 62 parts In-Stock

1+ parts

$0.489

100+ parts

-

1k+ parts

$0.440

10k+ parts

-

62

$0.489

-

$0.440

-

Corohmni

South Africa . 538 parts In-Stock

1+ parts

$0.840

100+ parts

-

1k+ parts

-

10k+ parts

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538

$0.840

-

-

-

MKK Technologies

India . 143 parts In-Stock

1+ parts

$0.919

100+ parts

-

1k+ parts

-

10k+ parts

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143

$0.919

-

-

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DigiPath Technology Company

USA . 143 parts In-Stock

1+ parts

$0.919

100+ parts

-

1k+ parts

-

10k+ parts

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143

$0.919

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-

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Aztec Data Supply Inc.

USA . 3,865 parts In-Stock

1+ parts

$1.220

100+ parts

-

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-

10k+ parts

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3,865

$1.220

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Ampacity Inc.

Singapore . 118 parts In-Stock

1+ parts

$16.610

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-

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118

$16.610

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Semicontronic

India . 34 parts In-Stock

1+ parts

$21.190

100+ parts

$20.660

1k+ parts

$20.554

10k+ parts

-

34

$21.190

$20.660

$20.554

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Corphita

USA . 1,962 parts In-Stock

1+ parts

$22.437

100+ parts

-

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1,962

$22.437

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Continental Prestige Electronics

USA . 5,687 parts In-Stock

1+ parts

$28.632

100+ parts

-

1k+ parts

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10k+ parts

$28.059

5,687

$28.632

-

-

$28.059

Netroflash

USA . 500 parts In-Stock

1+ parts

$30.336

100+ parts

$29.729

1k+ parts

-

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500

$30.336

$29.729

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-

Modulus Dynamics

Lithuania . 88 parts In-Stock

1+ parts

$31.972

100+ parts

$31.653

1k+ parts

$30.694

10k+ parts

-

88

$31.972

$31.653

$30.694

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Microchip USA

USA . 7,747 parts In-Stock

1+ parts

$79.741

100+ parts

-

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7,747

$79.741

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Lixinc

USA . 5,604 parts In-Stock

1+ parts

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5,604

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Argo Parts USA

USA . 3,391 parts In-Stock

1+ parts

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3,391

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Authorized Procurement Solutions

USA . 3,000 parts In-Stock

1+ parts

-

100+ parts

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3,000

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-

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Parana Technologies

USA . 1,803 parts In-Stock

1+ parts

-

100+ parts

$0.584

1k+ parts

-

10k+ parts

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1,803

-

$0.584

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Robosynatics

Brazil . 500 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

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500

-

-

-

-

Lucentia Tech

USA . 500 parts In-Stock

1+ parts

-

100+ parts

$0.353

1k+ parts

$0.353

10k+ parts

$0.353

500

-

$0.353

$0.353

$0.353

Glotronic Ltd.

UK . 203 parts In-Stock

1+ parts

-

100+ parts

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203

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Overview

Unleash the power of innovation with the STGE200NB60S Insulated Gate Bipolar Transistor by STMicroelectronics. Crafted with precision and excellence, this N-CHANNEL transistor offers unparalleled performance in power control applications. With a maximum collector-emitter voltage of 600V and a maximum gate-emitter voltage of 20V, this single configuration transistor ensures reliable operation even under high temperatures. Elevate your projects to new heights with the STGE200NB60S and experience the quality, value, and benefits that only STMicroelectronics can deliver.

Feature Benefit Bullets

Polarity or Channel Type: N-CHANNEL

N-channel IGBTs are known for their superior performance and efficiency in power control applications.

Configuration: SINGLE

Single configuration IGBTs are easier to control and operate, making them suitable for power control applications.

Maximum VCEsat: 1.6 V

Low VCEsat value indicates low conduction losses and high efficiency in power control applications.

Package Shape: RECTANGULAR

Rectangular packages provide good thermal management and easy mounting, contributing to overall reliability.

Nominal Turn Off Time (toff): 4600 ns

Fast turn-off time ensures quick and efficient switching, critical for power control applications.

Maximum Power Dissipation (Abs): 600 W

High power dissipation capability allows the IGBT to handle high power loads without overheating.

Package Style (Meter): FLANGE MOUNT

Flange mount packages offer robust mechanical support and ease of installation in power control systems.

Maximum Operating Temperature: 150 °C

High maximum operating temperature ensures reliability and stability under harsh environmental conditions.

Maximum Collector-Emitter Voltage: 600 V

High VCE voltage rating allows the IGBT to handle high voltage levels in power control applications.

Transistor Element Material: SILICON

Silicon-based transistors offer high performance and reliability in power control applications.

Maximum Gate-Emitter Voltage: 20 V

Low gate-emitter voltage ensures efficient gate control and reliable operation in power control applications.

Maximum Collector Current (IC): 200 A

High collector current rating allows the IGBT to handle high current loads in power control applications.

Terminal Finish: NICKEL

Nickel terminal finish provides good electrical conductivity and corrosion resistance for reliable connections.

Terminal Position: UPPER

Upper terminal position allows for easy connections and wiring in power control systems.

Case Connection: ISOLATED

Isolated case connection prevents electrical interference and ensures safe operation in power control applications.

Nominal Turn On Time (ton): 170 ns

Fast turn-on time enables quick response and efficient switching in power control applications.

Technical Specifications

Insulated Gate Bipolar Transistors (IGBT) STGE200NB60S attributes and parameters. Explore more Insulated Gate Bipolar Transistors (IGBT) devices from STMicroelectronics

Specs

Case Connection:

ISOLATED

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

600 V

Configuration:

Maximum Gate-Emitter Voltage:

20 V

JESD-30 Code:

R-XUFM-X4

No. of Elements:

1

No. of Terminals:

4

Maximum Operating Temperature:

150 Cel

Package Body Material:

UNSPECIFIED

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Insulated Gate BIP Transistors

Surface Mount:

NO

Terminal Finish:

NICKEL

Terminal Form:

UNSPECIFIED

Terminal Position:

UPPER

Transistor Application:

POWER CONTROL

Transistor Element Material:

SILICON

Nominal Turn Off Time (toff):

4600 ns

Nominal Turn On Time (ton):

170 ns

Maximum VCEsat:

1.6 V

Trade Compliance

STGE200NB60S Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

NSN

5961-01-570-4194, 5961015704194

NIIN

015704194

PCN

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

Category top products 20

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