Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
Discover essential electronic components for your devices, including CPU accelerators, system cache controllers, computer processors, motherboards, and graphics computing systems. Enhance device performance and connectivity with reliable components engineered for seamless integration and optimal functionality.
Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
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STGE50NC60WD from STMicroelectronics is an N-channel IGBT ideal for power control applications. It features a max VCEsat of 2.6V, supports up to 100A collector current, and operates at a max temp of 150 °C. Its compact flange mount design ensures efficient thermal management.
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The use of plastic/epoxy material ensures lightweight construction and resistance to environmental factors, contributing to reliability in various applications.
N-channel configurations typically offer better performance and efficiency in switching applications, making this IGBT a superior choice for power control.
The built-in diode simplifies circuit design and improves performance by allowing for faster recovery times in power control applications.
Designed specifically for power control, this IGBT is optimized for high-efficiency operation in demanding conditions.
A low VCEsat value indicates minimal voltage drop during operation, which improves efficiency and reduces heat generation.
The rectangular shape allows for easy integration into various circuit designs, enhancing versatility in applications.
Fast turn-off times ensure quick response and high-frequency operation, making this device suitable for fast-switching applications.
Having four terminals facilitates easy connections and simplifies circuit design, allowing for broader application compatibility.
High power dissipation capability means this IGBT can handle substantial loads without overheating, ensuring reliability in high-power applications.
Flange mount design offers excellent thermal management and improves mechanical stability, making it suitable for high-power environments.
The high operating temperature rating allows for operation in extreme conditions, increasing durability and reliability.
A high voltage rating enables this IGBT to be used in a wide range of high-voltage applications, enhancing its versatility.
Silicon as the elemental material provides good electrical properties, ensuring reliable performance in power electronics.
A voltage rating of 20 V on the gate-emitter junction allows flexibility in control options and enhances compatibility with various driving circuits.
Supporting a high collector current of 100 A makes this IGBT ideal for demanding applications, increasing its potential applications.
Upper terminal positioning assists in easier layout and design of PCB, facilitating efficient electrical connectivity.
Isolated case connections enhance safety and compatibility, particularly important in high-voltage applications.
A short turn-on time allows for rapid switching, making this IGBT applicable in high-frequency power conversion tasks.
Insulated Gate Bipolar Transistors (IGBT) STGE50NC60WD attributes and parameters. Explore more Insulated Gate Bipolar Transistors (IGBT) devices from STMicroelectronics
Case Connection:
Maximum Collector Current (IC):
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JESD-30 Code:
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No. of Terminals:
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Peak Reflow Temperature (C):
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STGE50NC60WD Transistors trade compliance attributes, and parameters.
ECCN
EAR99
ECCN Governance
EAR
PCN Obsolescence/ EOL - Mult IGBT OBS 21/Dec/2017
STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.
President, CEO
Jean-Marc Chery
President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience
Lorenzo Grandi
President, Sales & Marketing
Jerome Roux
Castelletto
Fabrication
Fab Initiation
1968
Italy
Wafer Capacity
SGFAB AMK 6
2000
Singapore
29,000
AG200
Agrate Brianza
14,000
RST 8
France
Rousset
35,000
Crolles 1
1993
Crolles
30,000
Crolles 2-ext. mod 5
Crolles 2-ext. mod 2
2022
Crolles 2-ext. mod 3
2023
Crolles 2
2004
28,000
1985
SiC Fab
2006
Sweden
Norrköping
10,000
Fab 3
2005
Tours
2,000
Fab 1 & Fab 2
1978
55,000
Fab 2
1997
Catania
SGFAB-AMK 6E
2003
145,000
SGFAB-AMJ 9
1984
152,000
AG300 (R3)
1980
25,000
1987
34,000
AG300
2024
Crolles 2-ext. mod 1
2020
Fab 1 6-inch fab
2013
11,000
SiC 6-inch line
2021
2,500
200mm GaN
2018
SGFAB-AMK 8
2001
Crolles 2- JV Fab
SGFAB-AMK 6
2016
38,125
SGFAB-AMK 2E
2010
20,000
Silicon Carbide A.B.
SiC wafer/EPI Fab
SiC Device Fab
2025
1N4148WT
Jiangsu Changjiang Electronics Technology
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: FLAT; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
LM317T/NOPB
Texas Instruments
LM317T/NOPB by Texas Instruments is an adjustable positive single output standard regulator with a max output voltage of 37V and max input-output voltage differential of 40V. It operates in temperatures ranging from 0 to 125°C, making it suitable for various applications requiring precise voltage regulation in electronic circuits. The package style is flange mount with three terminals for easy installation.
BAV99
Promax-johnton
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;
RECTIFIER DIODE; Surface Mount: YES; Maximum Forward Voltage (VF): .715 V; Maximum Operating Temperature: 150 Cel; Maximum Reverse Recovery Time: .006 us; Maximum Output Current: .2 A;
1N4148
Dc Components
RECTIFIER DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;
Siemens
1N4148WS
Changzhou Starsea Electronics
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
LM358MX
National Semiconductor
OPERATIONAL AMPLIFIER; Temperature Grade: COMMERCIAL; Terminal Form: GULL WING; No. of Terminals: 8; Package Code: SOP; Package Shape: RECTANGULAR;
ULN2803A
Allegro MicroSystems
NPN; Configuration: 8 BANKS, DARLINGTON WITH BUILT-IN DIODE AND RESISTOR; Surface Mount: NO; Maximum Collector Current (IC): .5 A; Maximum Operating Temperature: 85 Cel; Terminal Form: THROUGH-HOLE;
2N7002
Silicon Standard
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): .225 W; Maximum Drain-Source On Resistance: 7.5 ohm; Transistor Element Material: SILICON;
08055C104KAT2A
KYOCERA AVX
08055C104KAT2A by KYOCERA AVX is a ceramic capacitor with 0.1uF capacitance and 50V rated DC voltage. It has X7R temperature characteristics, -55 to 125 °C operating range, and ±10% tolerance. Ideal for SMT applications requiring compact size and reliable performance in various electronic circuits.
BSS138
Panjit International
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Drain-Source On Resistance: 3 ohm; Minimum DS Breakdown Voltage: 50 V; Terminal Form: GULL WING;
M24308/2-1F
TE Connectivity
TE Connectivity's M24308/2-1F D-Sub Connector features 9 contacts, 2 rows, and a shell size of 1/E. With a rated current of 7.5A, it operates b/w -55°C to 125°C. Ideal for cable mounting applications, this connector has a steel shell with cadmium finish and uses crimp termination for female contact pins.
LM2931AZ-5.0RAG
Onsemi
LM2931AZ-5.0RAG by Onsemi is a Fixed Positive Single Output LDO Regulator with 5V nominal output voltage, 0.1A max output current, and 0.6V max dropout voltage. Ideal for applications requiring stable voltage regulation in temperature-sensitive environments up to 150°C.
06035C104KAT2A
06035C104KAT2A by KYOCERA AVX is a ceramic capacitor with 0.1uF capacitance and 50V rated DC voltage. It has X7R temperature characteristics, -55 to 125 °C operating range, and ±10% tolerance. Ideal for SMT applications requiring compact size and reliable performance in various electronic circuits.
LAN8720A-CP-TR
Microchip Technology
LAN8720A-CP-TR by Microchip: Ethernet transceiver with 100 Mbps data rate, operates at 3.3V, and consumes 54mA max supply current. Ideal for network interfaces in commercial applications due to its small size (4x4mm) and low power consumption.
Cheng-yi Electronic
FDN5618P
FDN5618P by Onsemi is a P-CHANNEL Power FET with 60V DS Breakdown Voltage. It features a single configuration with built-in diode, suitable for switching applications. With 10A IDM and 0.17 ohm RDS(on), it operates in the temperature range of -55 to 150 °C, making it ideal for various electronic devices.
LL4148
RECTIFIER DIODE; Terminal Position: END; Terminal Form: WRAP AROUND; No. of Terminals: 2; Surface Mount: YES; Package Shape: ROUND;
M85049/85-08W02
Amphenol
CIRCULAR CONN ACCESSORY; Shell Sizes: 8; 9; IEC Conformity: NO; MIL-Connector Accessory Name: BAND LOCK ADAPTER; MIL Conformity: YES; DIN Conformity: NO;
FGH75T65SHDTLN4
FGH75T65SHDTLN4 by Onsemi is an N-CHANNEL IGBT transistor with a max VCEsat of 2.1V and a max collector-emitter voltage of 650V. It is designed for power control applications, offering a max power dissipation of 455W and a max operating temperature of 175°C.
IRG4PH30KPBF
Infineon Technologies
IRG4PH30KPBF by Infineon Technologies is an N-CHANNEL IGBT transistor with a max collector-emitter voltage of 1200V and a max power dissipation of 42W. It is designed for MOTOR CONTROL applications, featuring a single configuration and a package style of FLANGE MOUNT. With a nominal turn on time of 53ns and max operating temperature of 150°C, it offers efficient performance in various industrial settings.
FP15R12KE3GBOSA1
Infineon Technologies' FP15R12KE3GBOSA1 is an N-CHANNEL IGBT with 7 elements, max. voltage of 1200V, and max. current of 25A. It has a toff of 610ns and ton of 135ns, suitable for high-power applications like motor drives and inverters due to its complex configuration and isolated case connection.
FP100R06KE3
FP100R06KE3 by Infineon Technologies is an N-CHANNEL IGBT with 600V VCEsat, 100A IC, and 1.9V VCEsat. Its complex configuration makes it suitable for high-power applications like motor drives and inverters due to its 335W power dissipation capability.
STGB25N40LZAG
STMicroelectronics
STGB25N40LZAG by STMicroelectronics is an N-CHANNEL IGBT with VCEsat of 1.25V, IC of 25A, and Ptot of 150W. Ideal for automotive ignition applications due to its built-in TVS diode and resistor. Operates b/w -55°C to 175°C temperature range, meeting AEC-Q101 standards.
CM200DU-12NFH
Powerex
N-CHANNEL; Configuration: SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Collector Current (IC): 200 A; No. of Elements: 2; Package Body Material: UNSPECIFIED;
FS35R12KT3BPSA1
Insulated Gate Bipolar Transistors; Peak Reflow Temperature (C): NOT SPECIFIED; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED;
DF150R12RT4HOSA1
DF150R12RT4HOSA1 by Infineon Technologies is an N-CHANNEL IGBT with a max voltage of 1200V. It has a turn on time of 185ns and turn off time of 490ns, making it ideal for power control applications. The transistor comes in a rectangular package style with flange mount and operates at temperatures up to 175°C.
APT50GP60J
APT50GP60J by Microchip Technology is an N-CHANNEL IGBT transistor with a max collector-emitter voltage of 600V and a max collector current of 100A. It has a nominal turn-off time of 202ns and a turn-on time of 55ns, making it ideal for power control applications. The transistor comes in a rectangular package style with flange mount and operates at temperatures up to 150°C.
IRG4BC30FDPBF
International Rectifier
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 100 W; Maximum Collector Current (IC): 31 A; JESD-609 Code: e3;
FGA25N120ANTDTU
FGA25N120ANTDTU by Onsemi is an N-CHANNEL IGBT with 1200V VCE, 25A IC, and 312W power dissipation. Ideal for high-power applications requiring efficient switching at up to 150°C operating temperature.
APT200GN60J
Microsemi
N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 682 W; Maximum Collector Current (IC): 250 A; Terminal Position: UPPER;
IHW20N120R5XKSA1
IHW20N120R5XKSA1 by Infineon Technologies is an N-CHANNEL IGBT with a max collector-emitter voltage of 1200V and a max collector current of 30A. It has a nominal turn-off time of 685ns and a turn-on time of 92ns, making it suitable for high-power applications like motor drives and inverters. The package style is flange mount with through-hole terminals in a rectangular shape.
HGTG20N60B3D
Harris Semiconductor
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 165 W; Maximum Collector Current (IC): 40 A; No. of Terminals: 3;
IRG4BC30KD-SPBF
IRG4BC30KD-SPBF by Infineon Technologies is an N-channel insulated gate bipolar transistor (IGBT) with a max collector-emitter voltage of 600V and a max collector current of 28A. It is commonly used in motor control applications due to its single configuration with built-in diode and small outline package style.
IGW50N60TPXKSA1
IGW50N60TPXKSA1 by Infineon is an N-CHANNEL IGBT with a max voltage of 600V and max current of 100A. It has a turn-off time of 396ns and turn-on time of 60ns, ideal for power control applications. The transistor comes in a rectangular package with through-hole terminals, suitable for flange mount installations at temperatures up to 175°C.
HGTG40N60B3
Fairchild Semiconductor
N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 290 W; Maximum Collector Current (IC): 70 A; Transistor Application: POWER CONTROL;
FB30R06W1E3ENG
Infineon's FB30R06W1E3ENG IGBT features 600V VCE, 39A IC, and 115W power dissipation. Ideal for high-power applications like motor drives due to its fast turn-off time of 245ns and low VCEsat of 2V. With an operating temperature range from -40°C to 150°C, it ensures reliable performance in various environments.
N-CHANNEL; Surface Mount: NO; Maximum Power Dissipation (Abs): 312 W; Maximum Collector Current (IC): 25 A; Terminal Finish: MATTE TIN; Maximum Gate-Emitter Voltage: 20 V;
CM200DY-12NF
Mitsubishi Electric
CM200DY-12NF by Mitsubishi Electric is an N-CHANNEL IGBT with 2 elements and a built-in diode. It has a max VCEsat of 2.2V and can handle a max collector current (IC) of 200A. This IGBT is commonly used for power control applications.
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STGE200NB60S
STGE200NB60S by STMicroelectronics is an N-CHANNEL IGBT with 600V VCE, 200A IC, and 1.6V VCEsat. Ideal for POWER CONTROL applications, it has a max power dissipation of 600W and operates up to 150°C.
STGE50NB60HD
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 300 W; Maximum Collector Current (IC): 100 A; Maximum Gate-Emitter Voltage: 20 V;
STGE50NC60VD
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 260 W; Maximum Collector Current (IC): 90 A; Transistor Application: POWER CONTROL;
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