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STMicroelectronics Insulated Gate Bipolar Transistors (IGBT) 292

Insulated Gate Bipolar Transistors (IGBT)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Case Connection Maximum Collector Current (IC) Maximum Collector-Emitter Voltage Configuration Maximum Drain Current (Abs) (ID) Maximum Drain Current (ID) Maximum Emitter Current Field Effect Transistor Technology Maximum Fall Time (tf) Maximum Gate-Emitter Threshold Voltage Maximum Gate-Emitter Voltage Maximum Intrinsic Stand-off Ratio Minimum Intrinsic Stand-off Ratio JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Operating Mode Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Qualification Reference Standard Maximum Rise Time (tr) Minimum Static Inter-Base Resistance Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Maximum Turn Off Time (toff) Nominal Turn Off Time (toff) Maximum Turn On Time (ton) Nominal Turn On Time (ton) Maximum VCEsat
STGD3NB60SD-1 by STMicroelectronics

STGD3NB60SD-1

STMicroelectronics

STGD3NB60SD-1 by STMicroelectronics is an N-CHANNEL IGBT with 600V VCE, 3A IC, and 48W Pd. It operates up to 175 °C making it ideal for power applications requiring high voltage switching in surface mount designs.

3 A

600 V

4.5 V

20 V

e3

1

175 Cel

260

N-CHANNEL

48 W

Insulated Gate BIP Transistors

YES

MATTE TIN

30

STGF14N60D by STMicroelectronics

STGF14N60D

STMicroelectronics

STGF14N60D by STMicroelectronics is an N-CHANNEL IGBT with 600V VCE, 11A IC, and 33W Pd. It operates up to 175 °C making it ideal for power electronics applications requiring high voltage and current handling capabilities.

11 A

600 V

6.5 V

20 V

175 Cel

N-CHANNEL

33 W

Insulated Gate BIP Transistors

NO

STGP14N60D by STMicroelectronics

STGP14N60D

STMicroelectronics

STMicroelectronics' STGP14N60D is an N-CHANNEL IGBT with 600V VCE, 25A IC, and 95W Ptot. It operates up to 175 °C making it ideal for high-power applications in industrial electronics and motor control systems.

25 A

600 V

6.5 V

20 V

175 Cel

N-CHANNEL

95 W

Insulated Gate BIP Transistors

NO

STGDL6NC60DIT4 by STMicroelectronics

STGDL6NC60DIT4

STMicroelectronics

STGDL6NC60DIT4 by STMicroelectronics is an N-CHANNEL IGBT with 600V max collector-emitter voltage, 13A max collector current, and 50W max power dissipation. Ideal for power control applications due to its fast turn-off time of 122ns and built-in diode configuration.

13 A

600 V

SINGLE WITH BUILT-IN DIODE

5.75 V

20 V

TO-252

R-PSSO-G2

1

2

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NOT SPECIFIED

N-CHANNEL

50 W

Not Qualified

Insulated Gate BIP Transistors

YES

GULL WING

SINGLE

NOT SPECIFIED

POWER CONTROL

SILICON

122 ns

10.5 ns

STGPL6NC60DI by STMicroelectronics

STGPL6NC60DI

STMicroelectronics

STGPL6NC60DI by STMicroelectronics is an N-CHANNEL IGBT with 600V VCE, 14A IC, and 56W Ptot. It features a built-in diode for power control applications. The transistor has a toff of 122ns and ton of 10.5ns, making it suitable for high-speed switching operations in various industrial systems.

14 A

600 V

SINGLE WITH BUILT-IN DIODE

5.75 V

20 V

TO-220AB

R-PSFM-T3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

56 W

Insulated Gate BIP Transistors

NO

THROUGH-HOLE

SINGLE

NOT SPECIFIED

POWER CONTROL

SILICON

122 ns

10.5 ns

STGW50H60DF by STMicroelectronics

STGW50H60DF

STMicroelectronics

STGW50H60DF by STMicroelectronics is an N-CHANNEL IGBT with 600V max collector-emitter voltage and 100A max collector current. It has a built-in diode, 285ns turn-off time, and 360W power dissipation. Ideal for power control applications requiring high efficiency and reliability in a flange mount package.

100 A

600 V

SINGLE WITH BUILT-IN DIODE

20 V

TO-247

R-PSFM-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

360 W

Insulated Gate BIP Transistors

NO

Matte Tin (Sn)

THROUGH-HOLE

SINGLE

POWER CONTROL

SILICON

285 ns

91 ns

STGW60H65F by STMicroelectronics

STGW60H65F

STMicroelectronics

STGW60H65F by STMicroelectronics is an N-CHANNEL IGBT with 650V VCE, 120A IC, and 360W Ptot. It's used for POWER CONTROL applications due to its fast turn-off time of 265ns and high operating temperature of 150 °C. The transistor comes in a RECTANGULAR package with THROUGH-HOLE terminals.

120 A

650 V

SINGLE

20 V

TO-247

R-PSFM-T3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

360 W

Insulated Gate BIP Transistors

NO

THROUGH-HOLE

SINGLE

NOT SPECIFIED

POWER CONTROL

SILICON

265 ns

96 ns

STGWA60NC60WDR by STMicroelectronics

STGWA60NC60WDR

STMicroelectronics

STGWA60NC60WDR by STMicroelectronics is an N-CHANNEL IGBT with 600V max collector-emitter voltage, 130A max collector current, and 340W max power dissipation. Ideal for power control applications due to its single configuration with built-in diode and fast turn-off time of 343ns.

130 A

600 V

SINGLE WITH BUILT-IN DIODE

5.75 V

20 V

TO-247

R-PSFM-T3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

340 W

Insulated Gate BIP Transistors

NO

THROUGH-HOLE

SINGLE

NOT SPECIFIED

POWER CONTROL

SILICON

343 ns

69 ns

STGD8NC60KT4 by STMicroelectronics

STGD8NC60KT4

STMicroelectronics

STGD8NC60KT4 by STMicroelectronics is an N-CHANNEL IGBT with 600V VCE, 15A IC, and 62W power dissipation. Suitable for surface mount applications, it operates up to 150 °C making it ideal for high-power electronic systems.

15 A

600 V

6.5 V

20 V

e3

1

150 Cel

N-CHANNEL

62 W

Insulated Gate BIP Transistors

YES

MATTE TIN

STGW50HF60SD by STMicroelectronics

STGW50HF60SD

STMicroelectronics

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 284 W; Maximum Collector Current (IC): 110 A; Maximum Gate-Emitter Voltage: 20 V;

110 A

600 V

SINGLE WITH BUILT-IN DIODE

5.7 V

20 V

TO-247

R-PSFM-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

284 W

Insulated Gate BIP Transistors

NO

Matte Tin (Sn)

THROUGH-HOLE

SINGLE

POWER CONTROL

SILICON

950 ns

69 ns

STGW50HF60S by STMicroelectronics

STGW50HF60S

STMicroelectronics

STGW50HF60S by STMicroelectronics is an N-CHANNEL IGBT with 600V max collector-emitter voltage, 110A max collector current, and 284W max power dissipation. Ideal for power control applications due to its single configuration and fast turn-off time of 950ns.

110 A

600 V

SINGLE

5.7 V

20 V

TO-247

R-PSFM-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

284 W

Insulated Gate BIP Transistors

NO

Matte Tin (Sn)

THROUGH-HOLE

SINGLE

POWER CONTROL

SILICON

950 ns

69 ns

STGWA30N120KD by STMicroelectronics

STGWA30N120KD

STMicroelectronics

STGWA30N120KD by STMicroelectronics is an N-CHANNEL IGBT with 1200V VCE, 60A IC, and 220W Ptot. Ideal for MOTOR CONTROL applications due to its built-in diode and fast turn-off time of 756ns. Package style is FLANGE MOUNT with THROUGH-HOLE terminals.

60 A

1200 V

SINGLE WITH BUILT-IN DIODE

6.5 V

25 V

TO-247

R-PSFM-T3

e3

1

3

125 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

220 W

Insulated Gate BIP Transistors

NO

Matte Tin (Sn)

THROUGH-HOLE

SINGLE

MOTOR CONTROL

SILICON

756 ns

57 ns

STGWA40N120KD by STMicroelectronics

STGWA40N120KD

STMicroelectronics

STGWA40N120KD by STMicroelectronics is an N-CHANNEL IGBT with 1200V max collector-emitter voltage, 80A max collector current, and 240W max power dissipation. Ideal for motor control applications due to its single configuration with built-in diode and fast turn-off time of 564ns.

80 A

1200 V

SINGLE WITH BUILT-IN DIODE

6.5 V

25 V

TO-247

R-PSFM-T3

1

3

125 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

240 W

Insulated Gate BIP Transistors

NO

THROUGH-HOLE

SINGLE

NOT SPECIFIED

MOTOR CONTROL

SILICON

564 ns

83 ns

STGB30H60DF by STMicroelectronics

STGB30H60DF

STMicroelectronics

STGB30H60DF by STMicroelectronics is an N-CHANNEL IGBT with VCEsat of 2.4V, IC of 60A, and Ptot of 260W. Ideal for power control applications, it operates b/w -40 to 175 °C with a VCEmax of 600V.

COLLECTOR

60 A

600 V

SINGLE WITH BUILT-IN DIODE

7 V

20 V

TO-263AB

R-PSSO-G2

1

2

175 Cel

-40 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NOT SPECIFIED

N-CHANNEL

260 W

Insulated Gate BIP Transistors

YES

GULL WING

SINGLE

NOT SPECIFIED

POWER CONTROL

SILICON

234 ns

64 ns

2.4 V

STGP30H60DF by STMicroelectronics

STGP30H60DF

STMicroelectronics

STMicroelectronics' STGP30H60DF is an N-CHANNEL IGBT with 150W power dissipation, 600V collector-emitter voltage, and 60A collector current. Ideal for high-power applications requiring efficient switching capabilities at up to 150°C operating temperature.

60 A

600 V

20 V

150 Cel

NOT SPECIFIED

N-CHANNEL

150 W

Insulated Gate BIP Transistors

NO

NOT SPECIFIED

STGW60H65DRF by STMicroelectronics

STGW60H65DRF

STMicroelectronics

STGW60H65DRF by STMicroelectronics is an N-CHANNEL IGBT with 650V VCE, 120A IC, and 360W Ptot. It operates up to 150 °C making it ideal for high-power applications in industrial electronics and motor control systems.

120 A

650 V

20 V

e3

150 Cel

N-CHANNEL

360 W

Insulated Gate BIP Transistors

NO

Matte Tin (Sn)

STGF35HF60W by STMicroelectronics

STGF35HF60W

STMicroelectronics

STMicroelectronics' STGF35HF60W is an N-CHANNEL IGBT with 600V VCE, 19A IC, and 40W Pd. It operates up to 150 °C making it ideal for high-power applications like motor drives and inverters.

19 A

600 V

5.75 V

20 V

150 Cel

N-CHANNEL

40 W

Insulated Gate BIP Transistors

NO

STGFW35HF60W by STMicroelectronics

STGFW35HF60W

STMicroelectronics

STMicroelectronics' STGFW35HF60W is an N-CHANNEL IGBT with 88W power dissipation, 600V collector-emitter voltage, and 36A collector current. Ideal for high-power applications requiring efficient switching capabilities in industrial equipment and motor drives.

36 A

600 V

5.75 V

20 V

150 Cel

N-CHANNEL

88 W

Insulated Gate BIP Transistors

NO

STGD3NC120H-1 by STMicroelectronics

STGD3NC120H-1

STMicroelectronics

STGD3NC120H-1 by STMicroelectronics is an N-CHANNEL IGBT with 1200V VCE, 16A IC, and 105W power dissipation. Ideal for POWER CONTROL applications due to its low VCEsat of 2.8V and fast turn-off time of 342ns. Package style is IN-LINE with through-hole terminals.

COLLECTOR

16 A

1200 V

SINGLE

5 V

20 V

TO-251

R-PSIP-T3

1

3

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

IN-LINE

NOT SPECIFIED

N-CHANNEL

105 W

NO

THROUGH-HOLE

SINGLE

NOT SPECIFIED

POWER CONTROL

SILICON

342 ns

18.5 ns

2.8 V

STGFW30NC60V by STMicroelectronics

STGFW30NC60V

STMicroelectronics

STMicroelectronics' STGFW30NC60V is an N-CHANNEL IGBT with 600V VCE, 36A IC, and 80W Pd. Ideal for high-power applications requiring efficient switching at up to 150 °C operating temperature.

36 A

600 V

5.75 V

20 V

150 Cel

N-CHANNEL

80 W

Insulated Gate BIP Transistors

NO

STGW60H65DF by STMicroelectronics

STGW60H65DF

STMicroelectronics

STGW60H65DF by STMicroelectronics is an N-CHANNEL IGBT with 650V VCE, 120A IC, and 360W Ptot. It is used for power control applications due to its fast turn-off time of 247ns and turn-on time of 113ns. The transistor comes in a rectangular package with through-hole terminals and built-in diode.

120 A

650 V

SINGLE WITH BUILT-IN DIODE

20 V

TO-247

R-PSFM-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

360 W

Insulated Gate BIP Transistors

NO

Matte Tin (Sn)

THROUGH-HOLE

SINGLE

POWER CONTROL

SILICON

247 ns

113 ns

STGF17NC60SD by STMicroelectronics

STGF17NC60SD

STMicroelectronics

STGF17NC60SD by STMicroelectronics is an N-CHANNEL IGBT with 600V VCE, 17A IC, and 32W Pd. It operates up to 150 °C making it ideal for power electronics applications requiring high voltage and current handling capabilities.

17 A

600 V

6.2 V

20 V

e3

150 Cel

N-CHANNEL

32 W

Insulated Gate BIP Transistors

NO

Matte Tin (Sn) - annealed

STGB20H60DF by STMicroelectronics

STGB20H60DF

STMicroelectronics

STGB20H60DF by STMicroelectronics is an N-CHANNEL IGBT with VCEsat of 2V, IC of 40A, and Ptot of 167W. Ideal for power control applications, it has a toff of 259ns and ton of 55.9ns. Suitable for surface mount with a max VCE of 600V and operating temperature range from -55 °C to +175°C.

COLLECTOR

40 A

600 V

SINGLE WITH BUILT-IN DIODE

7 V

20 V

TO-263AB

R-PSSO-G2

1

2

175 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NOT SPECIFIED

N-CHANNEL

167 W

Insulated Gate BIP Transistors

YES

GULL WING

SINGLE

NOT SPECIFIED

POWER CONTROL

SILICON

259 ns

55.9 ns

2 V

STGF30H60DF by STMicroelectronics

STGF30H60DF

STMicroelectronics

STGF30H60DF by STMicroelectronics is an N-CHANNEL IGBT with VCEsat of 2.4V, IC of 60A, and Pmax of 37W. Ideal for power control applications due to its fast turn-off time (toff) of 234ns and high collector-emitter voltage rating of 600V. Package style: FLANGE MOUNT, suitable for isolated case connections in various industrial settings.

ISOLATED

60 A

600 V

SINGLE WITH BUILT-IN DIODE

7 V

20 V

TO-220AB

R-PSFM-T3

1

3

175 Cel

-40 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

37 W

Insulated Gate BIP Transistors

NO

THROUGH-HOLE

SINGLE

NOT SPECIFIED

POWER CONTROL

SILICON

234 ns

64 ns

2.4 V

STGP35HF60W by STMicroelectronics

STGP35HF60W

STMicroelectronics

STMicroelectronics' STGP35HF60W is an N-CHANNEL IGBT with 600V VCE, 60A IC, and 200W power dissipation. It operates up to 150°C and has a gate-emitter threshold voltage of 5.75V. Ideal for high-power applications like motor drives and inverters due to its robust specifications.

60 A

600 V

5.75 V

20 V

e3

150 Cel

N-CHANNEL

200 W

Insulated Gate BIP Transistors

NO

MATTE TIN

STGW25H120DF2 by STMicroelectronics

STGW25H120DF2

STMicroelectronics

STGW25H120DF2 by STMicroelectronics is an N-CHANNEL IGBT with a max VCEsat of 2.6V and a max collector-emitter voltage of 1200V. It is used for power control applications, with a nominal turn off time of 339ns.

50 A

1200 V

SINGLE WITH BUILT-IN DIODE

7 V

20 V

TO-247

R-PSFM-T3

e3

1

3

175 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

375 W

NO

MATTE TIN

THROUGH-HOLE

SINGLE

POWER CONTROL

SILICON

339 ns

41 ns

2.6 V

STGW30H60DF by STMicroelectronics

STGW30H60DF

STMicroelectronics

STGW30H60DF by STMicroelectronics is an N-CHANNEL IGBT with VCEsat of 2.4V and IC of 60A. Ideal for POWER CONTROL applications, it has a max VCE of 600V and can dissipate up to 260W at temperatures ranging from -40 to 175 °C.

60 A

600 V

SINGLE WITH BUILT-IN DIODE

7 V

20 V

TO-247

R-PSFM-T3

1

3

175 Cel

-40 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

260 W

NO

THROUGH-HOLE

SINGLE

NOT SPECIFIED

POWER CONTROL

SILICON

234 ns

64 ns

2.4 V

STGW40V60DLF by STMicroelectronics

STGW40V60DLF

STMicroelectronics

STGW40V60DLF by STMicroelectronics is an N-CHANNEL IGBT with 600V max collector-emitter voltage, 80A max collector current, and 283W max power dissipation. It operates up to 175 °C and is ideal for high-power applications like motor drives and inverters.

80 A

600 V

20 V

175 Cel

NOT SPECIFIED

N-CHANNEL

283 W

Insulated Gate BIP Transistors

NO

NOT SPECIFIED

STGW60H60DLFB by STMicroelectronics

STGW60H60DLFB

STMicroelectronics

STGW60H60DLFB by STMicroelectronics is an N-CHANNEL IGBT with 600V VCE, 80A IC, and 375W Pd. It is used for POWER CONTROL applications due to its low VCEsat of 2V and fast turn-on time of 301ns. The device operates in a temperature range from -55 °C to 175°C and comes in a FLANGE MOUNT package style.

80 A

600 V

SINGLE WITH BUILT-IN DIODE

7 V

20 V

TO-247

R-PSFM-T3

1

3

175 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

375 W

NO

THROUGH-HOLE

SINGLE

NOT SPECIFIED

POWER CONTROL

SILICON

301 ns

2 V

STGWT40V60DF by STMicroelectronics

STGWT40V60DF

STMicroelectronics

STGWT40V60DF by STMicroelectronics is an N-CHANNEL IGBT with VCEsat of 2.3V, IC of 80A, and Pmax of 283W. Ideal for POWER CONTROL applications due to its fast turn-off time (toff) of 241ns and high operating temperature range (-55 to 175 °C).

COLLECTOR

80 A

600 V

SINGLE WITH BUILT-IN DIODE

7 V

20 V

R-PSFM-T3

1

3

175 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

283 W

NO

THROUGH-HOLE

SINGLE

NOT SPECIFIED

POWER CONTROL

SILICON

241 ns

73 ns

2.3 V

STGWT40V60DLF by STMicroelectronics

STGWT40V60DLF

STMicroelectronics

STGWT40V60DLF by STMicroelectronics is an N-CHANNEL IGBT with 600V VCE, 80A IC, and 283W Pd. It operates up to 175 °C making it ideal for high-power applications in industries like automotive, renewable energy, and industrial automation.

80 A

600 V

20 V

175 Cel

NOT SPECIFIED

N-CHANNEL

283 W

Insulated Gate BIP Transistors

NO

NOT SPECIFIED

STGWT60H60DLFB by STMicroelectronics

STGWT60H60DLFB

STMicroelectronics

STGWT60H60DLFB by STMicroelectronics is an N-CHANNEL IGBT with 600V VCEsat, 80A IC, and 375W power dissipation. Ideal for power control applications due to its single configuration with built-in diode and flange mount package style. Operating temperature ranges from -55 °C to 175°C.

COLLECTOR

80 A

600 V

SINGLE WITH BUILT-IN DIODE

7 V

20 V

R-PSFM-T3

1

3

175 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

375 W

NO

THROUGH-HOLE

SINGLE

NOT SPECIFIED

POWER CONTROL

SILICON

301 ns

2 V

STGB20V60DF by STMicroelectronics

STGB20V60DF

STMicroelectronics

STGB20V60DF by STMicroelectronics is an N-CHANNEL IGBT with 600V max collector-emitter voltage, 40A max collector current, and 20V max gate-emitter voltage. It operates at a max temperature of 175 °C, suitable for surface mount applications in various electronic devices.

40 A

600 V

20 V

e3

1

175 Cel

245

N-CHANNEL

Insulated Gate BIP Transistors

YES

MATTE TIN

STGP20V60DF by STMicroelectronics

STGP20V60DF

STMicroelectronics

N-CHANNEL; Surface Mount: NO; Maximum Collector Current (IC): 40 A; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED; Maximum Gate-Emitter Voltage: 20 V; Peak Reflow Temperature (C): NOT SPECIFIED;

40 A

600 V

20 V

175 Cel

NOT SPECIFIED

N-CHANNEL

Insulated Gate BIP Transistors

NO

NOT SPECIFIED

STGP30V60DF by STMicroelectronics

STGP30V60DF

STMicroelectronics

STGP30V60DF by STMicroelectronics is an N-CHANNEL IGBT with 600V max collector-emitter voltage, 60A max collector current, and 225ns turn-off time. It is used for power control applications due to its single configuration with built-in diode and flange mount package style.

COLLECTOR

60 A

600 V

SINGLE WITH BUILT-IN DIODE

20 V

TO-220AB

R-PSFM-T3

e3

1

3

175 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

Insulated Gate BIP Transistors

NO

MATTE TIN

THROUGH-HOLE

SINGLE

POWER CONTROL

SILICON

225 ns

59 ns

STGW20V60DF by STMicroelectronics

STGW20V60DF

STMicroelectronics

N-CHANNEL; Surface Mount: NO; Maximum Power Dissipation (Abs): 167 W; Maximum Collector Current (IC): 40 A; Peak Reflow Temperature (C): NOT SPECIFIED; Maximum Gate-Emitter Voltage: 20 V;

40 A

600 V

20 V

175 Cel

NOT SPECIFIED

N-CHANNEL

167 W

Insulated Gate BIP Transistors

NO

NOT SPECIFIED

STGW60H65DFB by STMicroelectronics

STGW60H65DFB

STMicroelectronics

STGW60H65DFB by STMicroelectronics is an N-CHANNEL IGBT with 650V max collector-emitter voltage, 80A max collector current, and 375W max power dissipation. It operates up to 175°C making it suitable for high-power applications like motor drives and inverters.

80 A

650 V

20 V

175 Cel

NOT SPECIFIED

N-CHANNEL

375 W

Insulated Gate BIP Transistors

NO

NOT SPECIFIED

STGW80H65DFB by STMicroelectronics

STGW80H65DFB

STMicroelectronics

STGW80H65DFB by STMicroelectronics is an N-CHANNEL IGBT with 650V VCE, 120A IC, and 469W Pd. It operates up to 175°C making it ideal for high-power applications like motor drives and inverters.

120 A

650 V

20 V

175 Cel

NOT SPECIFIED

N-CHANNEL

469 W

Insulated Gate BIP Transistors

NO

NOT SPECIFIED

STGW80V60DF by STMicroelectronics

STGW80V60DF

STMicroelectronics

STGW80V60DF by STMicroelectronics is an N-CHANNEL IGBT with 469W power dissipation, 600V collector-emitter voltage, and 120A collector current. Ideal for high-power applications requiring efficient switching at up to 175°C operating temperature.

120 A

600 V

20 V

175 Cel

NOT SPECIFIED

N-CHANNEL

469 W

Insulated Gate BIP Transistors

NO

NOT SPECIFIED

STGWT20V60DF by STMicroelectronics

STGWT20V60DF

STMicroelectronics

N-CHANNEL; Surface Mount: NO; Maximum Power Dissipation (Abs): 167 W; Maximum Collector Current (IC): 40 A; Peak Reflow Temperature (C): NOT SPECIFIED; Maximum Operating Temperature: 175 Cel;

40 A

600 V

20 V

175 Cel

NOT SPECIFIED

N-CHANNEL

167 W

Insulated Gate BIP Transistors

NO

NOT SPECIFIED

STGWT40H60DLFB by STMicroelectronics

STGWT40H60DLFB

STMicroelectronics

STGWT40H60DLFB by STMicroelectronics is an N-CHANNEL IGBT with 600V max collector-emitter voltage, 80A max collector current, and 283W max power dissipation. Ideal for high-power applications requiring efficient switching at up to 175 °C operating temperature.

80 A

600 V

20 V

175 Cel

NOT SPECIFIED

N-CHANNEL

283 W

Insulated Gate BIP Transistors

NO

NOT SPECIFIED

STGWT40H65DFB by STMicroelectronics

STGWT40H65DFB

STMicroelectronics

STGWT40H65DFB by STMicroelectronics is an N-CHANNEL IGBT with 283W power dissipation, 650V collector-emitter voltage, and 80A collector current. Ideal for high-power applications requiring efficient switching at up to 175°C operating temperature.

80 A

650 V

20 V

175 Cel

NOT SPECIFIED

N-CHANNEL

283 W

Insulated Gate BIP Transistors

NO

NOT SPECIFIED

STGWT60H65DFB by STMicroelectronics

STGWT60H65DFB

STMicroelectronics

STGWT60H65DFB by STMicroelectronics is an N-CHANNEL IGBT with 650V VCE, 80A IC, and 375W power dissipation. Ideal for high-power applications requiring efficient switching at up to 175°C operating temperature.

80 A

650 V

20 V

175 Cel

NOT SPECIFIED

N-CHANNEL

375 W

Insulated Gate BIP Transistors

NO

NOT SPECIFIED

STGWT60V60DF by STMicroelectronics

STGWT60V60DF

STMicroelectronics

STGWT60V60DF by STMicroelectronics is an N-CHANNEL IGBT with VCEsat of 2.3V, IC of 80A, and Pmax of 375W. Ideal for power control applications due to its fast turn-off time (toff) of 243ns and high operating temperature range (-55 to 175 °C).

COLLECTOR

80 A

600 V

SINGLE WITH BUILT-IN DIODE

7 V

20 V

R-PSFM-T3

1

3

175 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

375 W

NO

THROUGH-HOLE

SINGLE

NOT SPECIFIED

POWER CONTROL

SILICON

243 ns

80 ns

2.3 V

STGWT80H65DFB by STMicroelectronics

STGWT80H65DFB

STMicroelectronics

STGWT80H65DFB by STMicroelectronics is an N-CHANNEL IGBT with 469W power dissipation, 650V collector-emitter voltage, and 120A collector current. It operates up to 175 °C making it ideal for high-power applications in industries like automotive and renewable energy.

120 A

650 V

20 V

175 Cel

NOT SPECIFIED

N-CHANNEL

469 W

Insulated Gate BIP Transistors

NO

NOT SPECIFIED

STGWT80V60DF by STMicroelectronics

STGWT80V60DF

STMicroelectronics

STGWT80V60DF by STMicroelectronics is an N-CHANNEL IGBT with 469W power dissipation, 175 °C max temp, 600V collector-emitter voltage. Ideal for high-power applications like motor drives and inverters due to its 120A collector current capacity.

120 A

600 V

20 V

175 Cel

NOT SPECIFIED

N-CHANNEL

469 W

Insulated Gate BIP Transistors

NO

NOT SPECIFIED

STGFW20V60F by STMicroelectronics

STGFW20V60F

STMicroelectronics

STGFW20V60F by STMicroelectronics is an N-CHANNEL IGBT with 600V max collector-emitter voltage and 40A max collector current. It has a single configuration with built-in diode, suitable for power control applications. The transistor offers fast switching times of 49ns turn-on and 173ns turn-off, making it ideal for high-speed operations.

ISOLATED

40 A

600 V

SINGLE WITH BUILT-IN DIODE

R-PSFM-T3

e3

1

3

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

NO

MATTE TIN

THROUGH-HOLE

SINGLE

POWER CONTROL

SILICON

173 ns

49 ns

STGW20V60F by STMicroelectronics

STGW20V60F

STMicroelectronics

STGW20V60F by STMicroelectronics is an N-CHANNEL IGBT with 600V max collector-emitter voltage and 40A max collector current. It has a turn on time of 49ns and turn off time of 173ns, making it ideal for power control applications requiring fast switching speeds. The transistor comes in a rectangular package with through-hole terminals, suitable for flange mount installation.

40 A

600 V

SINGLE WITH BUILT-IN DIODE

TO-247

R-PSFM-T3

e3

1

3

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

NO

MATTE TIN

THROUGH-HOLE

SINGLE

POWER CONTROL

SILICON

173 ns

49 ns