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STGWT40V60DF

STMicroelectronics

STGWT40V60DF by STMicroelectronics

STGWT40V60DF by STMicroelectronics is an N-CHANNEL IGBT with VCEsat of 2.3V, IC of 80A, and Pmax of 283W. Ideal for POWER CONTROL applications due to its fast turn-off time (toff) of 241ns and high operating temperature range (-55 to 175 °C).

Median Price

$4.600

Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

DigiKey

USA . 15 parts In-Stock

1+ parts

$4.600

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15

$4.600

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Distributors (In-Stock)

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Digiode

USA . 4,380 parts In-Stock

1+ parts

$5.140

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4,380

$5.140

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Vyrian

USA . 6,146 parts In-Stock

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6,146

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Anansix

USA . 791 parts In-Stock

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791

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IDEA Electronic Components Group

UK . 1,900 parts In-Stock

1+ parts

$0.357

100+ parts

-

1k+ parts

$0.321

10k+ parts

-

1,900

$0.357

-

$0.321

-

MKK Technologies

India . 543 parts In-Stock

1+ parts

$0.671

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-

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543

$0.671

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DigiPath Technology Company

USA . 543 parts In-Stock

1+ parts

$0.671

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543

$0.671

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Corphita

USA . 4,590 parts In-Stock

1+ parts

$4.869

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4,590

$4.869

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Ampacity Inc.

Singapore . 17 parts In-Stock

1+ parts

$10.010

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17

$10.010

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Microchip USA

USA . 498 parts In-Stock

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$29.770

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498

$29.770

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RC Electronics

USA . 9,426 parts In-Stock

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9,426

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Authorized Procurement Solutions

USA . 7,000 parts In-Stock

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A-Z Elektronik GmbH

Germany . 5,972 parts In-Stock

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Kepictronics

USA . 5,000 parts In-Stock

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Epart123

USA . 4,800 parts In-Stock

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$2.650

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$2.650

4,800

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$2.650

$2.650

Parana Technologies

USA . 2,095 parts In-Stock

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$0.427

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2,095

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$0.427

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Perfect Parts

USA . 746 parts In-Stock

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746

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GreenTree Electronics

Israel . 50 parts In-Stock

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50

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Overview

Unlock the power of STGWT40V60DF by STMicroelectronics, a high-quality insulated gate bipolar transistor perfect for power control applications. With a maximum collector-emitter voltage of 600V and a maximum collector current of 80A, this N-channel transistor with built-in diode offers efficient performance and reliability. The rectangular package shape and flange mount style make installation a breeze, while the maximum operating temperature of 175 °C ensures durability in challenging environments. Trust STMicroelectronics for cutting-edge technology that delivers exceptional value and performance to meet your power control needs.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides good insulation and protection for the internal components, ensuring durability and reliability.

Polarity or Channel Type: N-CHANNEL

N-channel IGBTs typically have lower conduction losses and higher efficiency compared to P-channel IGBTs, making them suitable for high power applications.

Configuration: SINGLE WITH BUILT-IN DIODE

The built-in diode allows for easy and efficient switching of the current flow, enhancing overall performance.

Transistor Application: POWER CONTROL

Designed specifically for power control applications, ensuring optimal performance and reliability in controlling high power loads.

Maximum VCEsat: 2.3 V

Low VCEsat results in lower conduction losses and improved efficiency, making this IGBT suitable for high power applications.

Package Shape: RECTANGULAR

Rectangular package shape allows for easy integration and mounting in various electronic circuits and systems.

Terminal Form: THROUGH-HOLE

Through-hole terminals offer easy and secure soldering connections, ensuring stable and reliable operation.

Nominal Turn Off Time (toff): 241 ns

Fast turn-off time ensures efficient switching and control of power, reducing switching losses and improving overall performance.

No. of Terminals: 3

Three terminals provide necessary connections for control and power supply, enabling proper functioning of the IGBT in the circuit.

Maximum Power Dissipation (Abs): 283 W

High power dissipation capability ensures the IGBT can handle large power loads without overheating, ensuring reliability under high load conditions.

Package Style (Meter): FLANGE MOUNT

Flange mount package style allows for secure mounting and heat dissipation, ensuring stable operation even in high temperature environments.

Maximum Operating Temperature: 175 °C

High maximum operating temperature allows for reliable operation in demanding environments without the risk of overheating.

Maximum Collector-Emitter Voltage: 600 V

High collector-emitter voltage rating allows for handling high voltage applications, making this IGBT suitable for power control in various systems.

Transistor Element Material: SILICON

Silicon material offers high performance and efficiency in power applications, ensuring reliable operation and durability.

Maximum Gate-Emitter Voltage: 20 V

High gate-emitter voltage rating allows for proper control and switching of the IGBT, ensuring precise operation in power control applications.

Minimum Operating Temperature: -55 °C

Low minimum operating temperature ensures the IGBT can operate in a wide range of temperature conditions, making it versatile and suitable for various applications.

Maximum Collector Current (IC): 80 A

High collector current rating allows for handling high current loads, making this IGBT suitable for power control in high current applications.

Maximum Gate-Emitter Threshold Voltage: 7 V

Low gate-emitter threshold voltage allows for efficient control and switching of the IGBT, ensuring precise operation in power control applications.

Terminal Position: SINGLE

Single terminal position simplifies circuit connections and ensures easy integration in electronic systems.

Case Connection: COLLECTOR

Collector case connection allows for efficient heat dissipation and stable operation, ensuring reliability in high power applications.

Nominal Turn On Time (ton): 73 ns

Fast turn-on time enables quick response and switching, ensuring efficient power control and operation in various applications.

Technical Specifications

Insulated Gate Bipolar Transistors (IGBT) STGWT40V60DF attributes and parameters. Explore more Insulated Gate Bipolar Transistors (IGBT) devices from STMicroelectronics

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

600 V

Maximum Gate-Emitter Threshold Voltage:

7 V

Maximum Gate-Emitter Voltage:

20 V

JESD-30 Code:

R-PSFM-T3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

175 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Peak Reflow Temperature (C):

NOT SPECIFIED

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Surface Mount:

NO

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Transistor Application:

POWER CONTROL

Transistor Element Material:

SILICON

Nominal Turn Off Time (toff):

241 ns

Nominal Turn On Time (ton):

73 ns

Maximum VCEsat:

2.3 V

Trade Compliance

STGWT40V60DF Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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