Loading...

STGWT20H65FB

STMicroelectronics

STGWT20H65FB by STMicroelectronics

STGWT20H65FB by STMicroelectronics is an N-CHANNEL IGBT with 168W power dissipation, 650V collector-emitter voltage, and 40A collector current. It operates up to 175°C and is ideal for high-power applications in various industries.

Median Price

$3.420

Lifecycle Status

Suppliers In-Stock

6

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Mouser Electronics

USA . 464 parts In-Stock

1+ parts

$3.390

100+ parts

$1.280

1k+ parts

$1.170

10k+ parts

-

464

$3.390

$1.280

$1.170

-

DigiKey

USA . 498 parts In-Stock

1+ parts

$3.450

100+ parts

$1.874

1k+ parts

$1.272

10k+ parts

$1.106

498

$3.450

$1.874

$1.272

$1.106

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 4,049 parts In-Stock

1+ parts

$1.758

100+ parts

-

1k+ parts

-

10k+ parts

-

4,049

$1.758

-

-

-

Nova Conductors

Japan . 97 parts In-Stock

1+ parts

$1.850

100+ parts

-

1k+ parts

-

10k+ parts

-

97

$1.850

-

-

-

Anansix

USA . 603 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

603

-

-

-

-

Vyrian

USA . 358 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

358

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

IDEA Electronic Components Group

UK . 429 parts In-Stock

1+ parts

$0.444

100+ parts

-

1k+ parts

$0.400

10k+ parts

-

429

$0.444

-

$0.400

-

MKK Technologies

India . 2,111 parts In-Stock

1+ parts

$0.836

100+ parts

-

1k+ parts

-

10k+ parts

-

2,111

$0.836

-

-

-

DigiPath Technology Company

USA . 2,111 parts In-Stock

1+ parts

$0.836

100+ parts

-

1k+ parts

-

10k+ parts

-

2,111

$0.836

-

-

-

Semicontronic

India . 823 parts In-Stock

1+ parts

$1.570

100+ parts

$1.531

1k+ parts

$1.523

10k+ parts

-

823

$1.570

$1.531

$1.523

-

Ampacity Inc.

Singapore . 247 parts In-Stock

1+ parts

$1.570

100+ parts

-

1k+ parts

-

10k+ parts

-

247

$1.570

-

-

-

Corphita

USA . 479 parts In-Stock

1+ parts

$1.665

100+ parts

-

1k+ parts

-

10k+ parts

-

479

$1.665

-

-

-

Aranea Global

USA . 100 parts In-Stock

1+ parts

$1.813

100+ parts

-

1k+ parts

$1.740

10k+ parts

-

100

$1.813

-

$1.740

-

Argo Parts USA

USA . 4,371 parts In-Stock

1+ parts

$1.850

100+ parts

-

1k+ parts

-

10k+ parts

-

4,371

$1.850

-

-

-

Continental Prestige Electronics

USA . 1,324 parts In-Stock

1+ parts

$1.850

100+ parts

-

1k+ parts

-

10k+ parts

$1.813

1,324

$1.850

-

-

$1.813

Aztec Data Supply Inc.

USA . 3,623 parts In-Stock

1+ parts

$1.860

100+ parts

-

1k+ parts

-

10k+ parts

-

3,623

$1.860

-

-

-

Corohmni

South Africa . 101 parts In-Stock

1+ parts

$2.054

100+ parts

-

1k+ parts

-

10k+ parts

-

101

$2.054

-

-

-

Lixinc

USA . 14,250 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

14,250

-

-

-

-

Kepictronics

USA . 3,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

3,000

-

-

-

-

Authorized Procurement Solutions

USA . 2,500 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

2,500

-

-

-

-

Parana Technologies

USA . 468 parts In-Stock

1+ parts

-

100+ parts

$0.531

1k+ parts

-

10k+ parts

-

468

-

$0.531

-

-

Perfect Parts

USA . 403 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

403

-

-

-

-

Overview

Unleash the power of innovation with the STGWT20H65FB IGBT by STMicroelectronics. Known for their superior quality and reliability, STMicroelectronics delivers cutting-edge technology that exceeds industry standards. This N-CHANNEL transistor offers a maximum collector-emitter voltage of 650V and a maximum collector current of 40A, making it ideal for a wide range of applications. From industrial machinery to renewable energy systems, this IGBT provides unmatched performance and efficiency. Trust STMicroelectronics to provide the solutions you need to take your projects to the next level.

Feature Benefit Bullets

Polarity or Channel Type: N-CHANNEL

N-CHANNEL IGBTs offer lower conduction losses and faster switching speeds compared to P-CHANNEL IGBTs, making them suitable for high power applications.

Maximum Power Dissipation (Abs): 168 W

The high power dissipation capability allows for reliable operation under heavy load conditions, making this IGBT ideal for industrial and power electronics applications.

Maximum Operating Temperature: 175 °C

With a high maximum operating temperature, this IGBT can withstand harsh environmental conditions and high temperature operation without compromising performance.

Maximum Collector-Emitter Voltage: 650 V

The high collector-emitter voltage rating allows for this IGBT to be used in high voltage applications such as motor drives, inverters, and power supplies.

Maximum Gate-Emitter Voltage: 20 V

The gate-emitter voltage rating ensures proper gate control and protection, enabling precise switching and preventing damage to the IGBT in the event of overvoltage conditions.

Maximum Collector Current (IC): 40 A

With a high collector current rating, this IGBT can handle large currents without overheating, making it suitable for high power applications that require efficient conduction of current.

Maximum Gate-Emitter Threshold Voltage: 7 V

The low gate-emitter threshold voltage ensures easy gate control and efficient switching operation, enhancing the overall performance of the IGBT in different circuit configurations.

Technical Specifications

Insulated Gate Bipolar Transistors (IGBT) STGWT20H65FB attributes and parameters. Explore more Insulated Gate Bipolar Transistors (IGBT) devices from STMicroelectronics

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

650 V

Maximum Gate-Emitter Threshold Voltage:

7 V

Maximum Gate-Emitter Voltage:

20 V

Maximum Operating Temperature:

175 Cel

Peak Reflow Temperature (C):

NOT SPECIFIED

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Sub-Category:

Insulated Gate BIP Transistors

Surface Mount:

NO

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Trade Compliance

STGWT20H65FB Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

Category top products 20

Authentic purchasing experiences

Partstack™ will investigate all reported instances of potential suspect/counterfeit part listings.

Similar products 19