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IKY75N120CS6XKSA1

Infineon Technologies

IKY75N120CS6XKSA1 by Infineon Technologies

IKY75N120CS6XKSA1 by Infineon Technologies is an N-CHANNEL IGBT with 1200V VCEsat, 150A IC, and 880W power dissipation. Ideal for POWER CONTROL applications due to its fast turn-off time of 331ns and built-in diode configuration. Operates b/w -40°C to 175°C temperature range.

Median Price

$8.537

Lifecycle Status

Suppliers In-Stock

11

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Arrow

USA . 174 parts In-Stock

1+ parts

$5.148

100+ parts

$3.925

1k+ parts

$3.900

10k+ parts

$3.897

174

$5.148

$3.925

$3.900

$3.897

Chip1Stop

Japan . 237 parts In-Stock

1+ parts

$9.040

100+ parts

$5.260

1k+ parts

-

10k+ parts

$5.240

237

$9.040

$5.260

-

$5.240

Newark

USA . 32 parts In-Stock

1+ parts

$10.600

100+ parts

$6.590

1k+ parts

$6.190

10k+ parts

-

32

$10.600

$6.590

$6.190

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Farnell

UK . 226 parts In-Stock

1+ parts

$12.970

100+ parts

$9.710

1k+ parts

$8.810

10k+ parts

-

226

$12.970

$9.710

$8.810

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Element14

Singapore . 226 parts In-Stock

1+ parts

$27.050

100+ parts

$20.620

1k+ parts

$18.690

10k+ parts

-

226

$27.050

$20.620

$18.690

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Verical

USA . 414 parts In-Stock

1+ parts

-

100+ parts

$4.848

1k+ parts

-

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414

-

$4.848

-

-

RS (Exports)

UK . 85 parts In-Stock

1+ parts

-

100+ parts

$8.034

1k+ parts

$7.526

10k+ parts

-

85

-

$8.034

$7.526

-

Rochester

USA . 68 parts In-Stock

1+ parts

-

100+ parts

$3.840

1k+ parts

$3.430

10k+ parts

$3.230

68

-

$3.840

$3.430

$3.230

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 862 parts In-Stock

1+ parts

$4.891

100+ parts

-

1k+ parts

-

10k+ parts

-

862

$4.891

-

-

-

Nova Conductors

Japan . 50 parts In-Stock

1+ parts

$7.498

100+ parts

-

1k+ parts

-

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50

$7.498

-

-

-

Vyrian

USA . 8,700 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

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8,700

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Advanced Electronics

New Zealand . 3,000 parts In-Stock

1+ parts

$0.740

100+ parts

$0.703

1k+ parts

$0.703

10k+ parts

-

3,000

$0.740

$0.703

$0.703

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Aztec Data Supply Inc.

USA . 276 parts In-Stock

1+ parts

$0.931

100+ parts

-

1k+ parts

-

10k+ parts

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276

$0.931

-

-

-

Corohmni

South Africa . 506 parts In-Stock

1+ parts

$1.062

100+ parts

-

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-

10k+ parts

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506

$1.062

-

-

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Modulus Dynamics

Lithuania . 13,371 parts In-Stock

1+ parts

$1.574

100+ parts

$1.511

1k+ parts

$1.448

10k+ parts

-

13,371

$1.574

$1.511

$1.448

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Semicontronic

India . 172 parts In-Stock

1+ parts

$4.380

100+ parts

$4.270

1k+ parts

$4.249

10k+ parts

-

172

$4.380

$4.270

$4.249

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Ampacity Inc.

Singapore . 160 parts In-Stock

1+ parts

$4.380

100+ parts

-

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-

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160

$4.380

-

-

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Corphita

USA . 477 parts In-Stock

1+ parts

$4.633

100+ parts

-

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-

10k+ parts

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477

$4.633

-

-

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Continental Prestige Electronics

USA . 226 parts In-Stock

1+ parts

$12.970

100+ parts

$9.710

1k+ parts

-

10k+ parts

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226

$12.970

$9.710

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-

Microchip USA

USA . 4,502 parts In-Stock

1+ parts

$34.524

100+ parts

-

1k+ parts

-

10k+ parts

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4,502

$34.524

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-

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Authorized Procurement Solutions

USA . 5,000 parts In-Stock

1+ parts

-

100+ parts

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5,000

-

-

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Argo Parts USA

USA . 4,805 parts In-Stock

1+ parts

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4,805

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Netroflash

USA . 2,000 parts In-Stock

1+ parts

-

100+ parts

$7.348

1k+ parts

$7.123

10k+ parts

$6.973

2,000

-

$7.348

$7.123

$6.973

Perfect Parts

USA . 1,646 parts In-Stock

1+ parts

-

100+ parts

-

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10k+ parts

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1,646

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Overview

Power up your applications with the IKY75N120CS6XKSA1 from Infineon Technologies. As a leading manufacturer in the industry, Infineon delivers top-notch quality and reliability in their Insulated Gate Bipolar Transistors (IGBT). Designed for power control, this N-CHANNEL transistor with a built-in diode offers a maximum VCEsat of 2.15V and a maximum collector-emitter voltage of 1200V. With a maximum operating temperature of 175°C and a maximum power dissipation of 880W, this transistor ensures optimal performance and efficiency. Trust Infineon to provide you with the best-in-class components for your electronic needs.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the internal components, ensuring a longer lifespan for the product.

Maximum Collector-Emitter Voltage: 1200 V

Allows for high voltage applications, making this IGBT suitable for power control in various industrial settings.

Maximum Power Dissipation (Abs): 880 W

Capable of handling high power dissipation, making it reliable for demanding power control applications.

Maximum Gate-Emitter Voltage: 20 V

Allows for precise control over the transistor, ensuring efficient power management.

Nominal Turn Off Time (toff): 331 ns

Fast turn-off time allows for quick switching transitions, optimizing power control efficiency.

Nominal Turn On Time (ton): 64 ns

Fast turn-on time enables rapid response in power control applications, enhancing overall performance.

Technical Specifications

Insulated Gate Bipolar Transistors (IGBT) IKY75N120CS6XKSA1 attributes and parameters. Explore more Insulated Gate Bipolar Transistors (IGBT) devices from Infineon Technologies

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

1200 V

Maximum Gate-Emitter Threshold Voltage:

6.3 V

Maximum Gate-Emitter Voltage:

20 V

JESD-30 Code:

R-PSIP-T4

JESD-609 Code:

e3

No. of Elements:

1

No. of Terminals:

4

Maximum Operating Temperature:

175 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

IN-LINE

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Surface Mount:

NO

Terminal Finish:

TIN

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

POWER CONTROL

Transistor Element Material:

SILICON

Nominal Turn Off Time (toff):

331 ns

Nominal Turn On Time (ton):

64 ns

Maximum VCEsat:

2.15 V

Trade Compliance

IKY75N120CS6XKSA1 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Infineon Technologies

Infineon Technologies AG is a leading global semiconductor manufacturer and provider of comprehensive solutions for automotive, industrial, and consumer applications. Founded in 1999, the company has grown to become one of the largest semiconductor manufacturers in Europe. Infineon is headquartered in Neubiberg, Germany with operations across countries in Europe and Asia Pacific. Infineon provides microelectronics products that address many of today's societal challenges affecting energy efficiency, mobility, security and connectivity. Over the past two decades Infineon has become a major player in the semiconductor industry with an impressive portfolio of innovative technologies. As one of only four companies that produce DRAM chips for automobiles, Infineon produces cutting-edge processors for use in advanced driver assistance systems (ADAS). Likewise, they specialize in providing advanced embedded secure microcontrollers that are essential for connected devices. Furthermore, they offer integrated circuit solutions for industrial power control such as motor controllers and embedded gate drivers.

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Management team

CEO

Jochen Hanebeck

Chief Financial Officer

Sven Schneider

Chief Marketing Officer

Andreas Urschitz

Manufacturer fab locations 19

Fab name Location Fab Initiation Wafer Capacity

Villach 300mm

Fabrication

Fab Initiation

2011

Austria

Villach

Wafer Capacity

11,000

2011

11,000

Kulim 2

Fabrication

Fab Initiation

2016

Malaysia

Kulim

Wafer Capacity

79,500

2016

79,500

Dresden - Module 3

Fabrication

Fab Initiation

1999

Germany

Dresden

Wafer Capacity

58,000

1999

58,000

Villach Building

Fabrication

Fab Initiation

2016

Austria

Villach

Wafer Capacity

2,000

2016

2,000

Regensburg

Fabrication

Fab Initiation

1986

Germany

Regensburg

Wafer Capacity

60,000

1986

60,000

Dresden 200 - Module 1

Fabrication

Fab Initiation

1995

Germany

Dresden

Wafer Capacity

28,000

1995

28,000

Dresden 200 - Module 2

Fabrication

Fab Initiation

1996

Germany

Dresden

Wafer Capacity

28,000

1996

28,000

Building 38

Fabrication

Fab Initiation

2005

Germany

Dresden

Wafer Capacity

500

2005

500

Building 47

Fabrication

Fab Initiation

2005

Germany

Dresden

Wafer Capacity

500

2005

500

Kulim 1

Fabrication

Fab Initiation

2006

Malaysia

Kulim

Wafer Capacity

110,000

2006

110,000

Mesa Facility

Fabrication

Fab Initiation

1990

USA

Mesa

Wafer Capacity

3,000

1990

3,000

Villach 150mm

Fabrication

Fab Initiation

1981

Austria

Villach

Wafer Capacity

35,000

1981

35,000

Villach 200mm

Fabrication

Fab Initiation

1995

Austria

Villach

Wafer Capacity

68,000

1995

68,000

Temecula

Fabrication

Fab Initiation

1995

USA

Temecula

Wafer Capacity

30,000

1995

30,000

Villach 300mm

Fabrication

Fab Initiation

2021

Austria

Villach

Wafer Capacity

2021

Villach 150mm

Fabrication

Fab Initiation

2018

Austria

Villach

Wafer Capacity

5,000

2018

5,000

Kulim 3

Fabrication

Fab Initiation

2024

Malaysia

Kulim

Wafer Capacity

2024

Fab 25

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

31,000

1995

31,000

Dresden - Module 4

Fabrication

Fab Initiation

2026

Germany

Dresden

Wafer Capacity

2026

Category top products 20

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