Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
Discover essential electronic components for your devices, including CPU accelerators, system cache controllers, computer processors, motherboards, and graphics computing systems. Enhance device performance and connectivity with reliable components engineered for seamless integration and optimal functionality.
Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
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IRGB4056DPBF by Infineon Technologies is an N-CHANNEL IGBT with a max Collector-Emitter Voltage of 600V and Max Collector Current of 24A. It has a Power Dissipation of 140W, making it suitable for POWER CONTROL applications requiring fast switching times (tr: 24ns, tf: 31ns) and high efficiency in a RECTANGULAR package.
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This material is durable and provides good insulation, making the product reliable for long-term use.
N-channel IGBTs are known for their high efficiency and better performance compared to P-channel types.
Designed specifically for power control applications, making it suitable for a wide range of industrial uses.
With a high power dissipation capability, this product can handle high power loads effectively.
This high voltage rating allows for versatile use in various electronic circuits and systems.
Capable of handling high current loads, making it suitable for power control applications requiring high current.
Insulated Gate Bipolar Transistors (IGBT) IRGB4056DPBF attributes and parameters. Explore more Insulated Gate Bipolar Transistors (IGBT) devices from Infineon Technologies
Case Connection:
Maximum Collector Current (IC):
Maximum Collector-Emitter Voltage:
Configuration:
Maximum Fall Time (tf):
Maximum Gate-Emitter Threshold Voltage:
Maximum Gate-Emitter Voltage:
JEDEC-95 Code:
JESD-30 Code:
No. of Elements:
No. of Terminals:
Maximum Operating Temperature:
Package Body Material:
Package Shape:
Package Style (Meter):
Peak Reflow Temperature (C):
Polarity or Channel Type:
Maximum Power Dissipation (Abs):
Qualification:
Maximum Rise Time (tr):
Sub-Category:
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Terminal Position:
Maximum Time At Peak Reflow Temperature (s):
Transistor Application:
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IRGB4056DPBF Transistors trade compliance attributes, and parameters.
ECCN
EAR99
ECCN Governance
EAR
Infineon Technologies AG is a leading global semiconductor manufacturer and provider of comprehensive solutions for automotive, industrial, and consumer applications. Founded in 1999, the company has grown to become one of the largest semiconductor manufacturers in Europe. Infineon is headquartered in Neubiberg, Germany with operations across countries in Europe and Asia Pacific. Infineon provides microelectronics products that address many of today's societal challenges affecting energy efficiency, mobility, security and connectivity. Over the past two decades Infineon has become a major player in the semiconductor industry with an impressive portfolio of innovative technologies. As one of only four companies that produce DRAM chips for automobiles, Infineon produces cutting-edge processors for use in advanced driver assistance systems (ADAS). Likewise, they specialize in providing advanced embedded secure microcontrollers that are essential for connected devices. Furthermore, they offer integrated circuit solutions for industrial power control such as motor controllers and embedded gate drivers.
CEO
Jochen Hanebeck
Chief Financial Officer
Sven Schneider
Chief Marketing Officer
Andreas Urschitz
Villach 300mm
Fabrication
Fab Initiation
2011
Austria
Villach
Wafer Capacity
11,000
Kulim 2
2016
Malaysia
Kulim
79,500
Dresden - Module 3
1999
Germany
Dresden
58,000
Villach Building
2,000
Regensburg
1986
60,000
Dresden 200 - Module 1
1995
28,000
Dresden 200 - Module 2
1996
Building 38
2005
500
Building 47
Kulim 1
2006
110,000
Mesa Facility
1990
USA
Mesa
3,000
Villach 150mm
1981
35,000
Villach 200mm
68,000
Temecula
30,000
2021
2018
5,000
Kulim 3
2024
Fab 25
Austin
31,000
Dresden - Module 4
2026
SS14
Hitano Enterprise
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: C BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
M39029/56351
Esterline Technologies
CONNECTOR ACCESSORY; IEC Conformity: NO; Contact Gender: FEMALE; DIN Conformity: NO; MIL-Connector Accessory Name: CONTACT; Tool Settings: M22520/2-10;
SMBJ18CA
First Components International
TRANS VOLTAGE SUPPRESSOR DIODE; Surface Mount: YES; Maximum Clamping Voltage: 29.2 V; Nominal Breakdown Voltage: 21.1 V; Polarity: BIDIRECTIONAL; Maximum Repetitive Peak Reverse Voltage: 18 V;
LL4148-GS08
Vishay Telefunken
RECTIFIER DIODE; Terminal Position: END; Terminal Form: WRAP AROUND; No. of Terminals: 2; Surface Mount: YES; Package Shape: ROUND;
2N7002
Fairchild Semiconductor
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .2 W; Maximum Time At Peak Reflow Temperature (s): 30; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;
FT232RL-REEL
FTDI
FTDI's FT232RL-REEL is a bus controller with 28 terminals, operating at 3.3V to 5.25V. It supports USB, VBUS, and UART buses with a data transfer rate of 60MBps. Ideal for industrial applications due to its CMOS technology and compatibility with RS232, RS422, and RS485 standards.
BSS138W-7-F
Multicomp Pro
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .2 W; Transistor Element Material: SILICON; No. of Elements: 1;
LL4148
Transys Electronics
LM107H/883
Texas Instruments
LM107H/883 by Texas Instruments is a MIL-STD-883 compliant operational amplifier with 3000uV max input offset voltage, 80dB common mode reject ratio, and 250kHz unity gain bandwidth. Ideal for military applications due to its -55 to 125 °C operating temperature range and robust metal package body material.
1N4148
Wuxi Xuyang Electronic
RECTIFIER DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;
CRG0805F10K
Tyco Electronics Components
FIXED RESISTOR; Mounting Type: SURFACE MOUNT; Resistance: 10000 ohm; Rated Power Dissipation (P): .125 W; Maximum Operating Temperature: 125 Cel; Tolerance: 1 %;
ERJ6ENF10R0V
Panasonic
Panasonic ERJ6ENF10R0V is a 10 ohm fixed resistor with 1% tolerance, suitable for surface mount applications. With a rated power dissipation of 0.125W and operating voltage of 150V, it operates b/w -55°C to 155°C. Its metal glaze/thick film technology ensures stable performance in various electronic circuits.
BAV99
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;
1N4148WS
Vishay Semiconductors
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
LM107H
National Semiconductor
OPERATIONAL AMPLIFIER; Temperature Grade: MILITARY; Terminal Form: WIRE; No. of Terminals: 8; Package Code: TO-99; Package Shape: ROUND;
2N2222A
ROHM
NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 250 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .6 A;
Meritek Electronics
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: FLAT; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
1N5819HW-7-F
SPC TECHNOLOGY/ MULTICOMP
USB3320C-EZK-TR
Microchip Technology
Microchip Technology's USB3320C-EZK-TR is a Bus Controller IC with 32 terminals, operating at 1.6-2V. It supports USB bus compatibility, clock frequency up to 60MHz, and CMOS technology. Ideal for applications requiring Universal Serial Bus peripherals in compact designs with low power consumption.
LM358M
Onsemi
OPERATIONAL AMPLIFIER; Temperature Grade: COMMERCIAL; Terminal Form: GULL WING; No. of Terminals: 8; Package Code: SOP; Package Shape: RECTANGULAR;
CM300DU-24NFH
Mitsubishi Electric
Mitsubishi Electric's CM300DU-24NFH is a N-CHANNEL IGBT with 2 SERIES CONNECTED elements, ideal for POWER CONTROL applications. Features include 1200V VCEsat, 300A IC, and 1900W power dissipation. Package style is FLANGE MOUNT with RECTANGULAR shape and UPPER terminal position.
FS150R12KT4PBPSA1
Infineon Technologies
Infineon FS150R12KT4PBPSA1 is a N-CHANNEL IGBT with 6 elements, built-in diode, and thermistor. It has a max voltage of 1200V and turn off time of 605ns. Ideal for applications requiring high power efficiency in industrial systems operating up to 150°C.
FS150R12KE3BOSA1
FS150R12KE3BOSA1 by Infineon is an N-CHANNEL IGBT with 6 elements, built-in diode, and thermistor. It has a max voltage of 1200V, current of 200A, and turn-off time of 610ns. Ideal for applications requiring high power efficiency in industrial settings due to its isolated case connection and fast switching capabilities.
IRGP4266DPBF
International Rectifier
N-CHANNEL; Surface Mount: NO; Maximum Power Dissipation (Abs): 455 W; Maximum Collector Current (IC): 140 A; Maximum Gate-Emitter Threshold Voltage: 7.7 V; Peak Reflow Temperature (C): NOT SPECIFIED;
IXXX100N60B3H1
Littelfuse
IXXX100N60B3H1 by Littelfuse is an N-CHANNEL IGBT with a max VCEsat of 1.8V and a collector current of 200A. Ideal for power control applications, it has a built-in diode, operates at temperatures up to 150°C, and features a turn-off time of 350ns.
IFF600B12ME4PB11BPSA1
Infineon Technologies IFF600B12ME4PB11BPSA1 is a N-CHANNEL IGBT with 2 elements, built-in diode, and thermistor. It has a max Vce of 1200V, toff of 750ns, and ton of 250ns. Ideal for power control applications due to UL recognition and isolated case connection.
FGL40N120ANDTU
FGL40N120ANDTU by Onsemi is an N-CHANNEL IGBT transistor with a max collector-emitter voltage of 1200V and a max collector current of 64A. It has a nominal turn-off time of 165ns and a turn-on time of 45ns, making it ideal for power control applications requiring fast switching capabilities. The transistor comes in a rectangular package style with flange mount and matte tin terminal finish.
IRG4PF50WPBF
IRG4PF50WPBF by Infineon Technologies is an N-CHANNEL IGBT with 900V max collector-emitter voltage, 51A max collector current, and 200W max power dissipation. Ideal for POWER CONTROL applications due to its fast turn-off time of 370ns and low gate-emitter threshold voltage of 6V.
IGW40N120H3FKSA1
IGW40N120H3FKSA1 by Infineon Technologies is an N-CHANNEL IGBT with 1200V max collector-emitter voltage, 80A max collector current, and 414ns nominal turn off time. Ideal for power control applications, this transistor features a single configuration in a rectangular package with through-hole terminals.
BSM75GB120DN2
Siemens
N-CHANNEL; Configuration: SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Collector Current (IC): 105 A; Nominal Turn Off Time (toff): 450 ns; Nominal Turn On Time (ton): 30 ns;
FS450R12KE3BOSA1
FS450R12KE3BOSA1 by Infineon is an N-CHANNEL IGBT with 6 elements, 1200V max voltage, and 600A max current. It has a toff of 810ns and ton of 400ns. Ideal for high-power applications requiring fast switching capabilities in industries like renewable energy and industrial motor drives.
FGA25N120ANTDTU
FGA25N120ANTDTU by Onsemi is an N-CHANNEL IGBT with 1200V VCE, 25A IC, and 312W power dissipation. Ideal for high-power applications requiring efficient switching at up to 150°C operating temperature.
STGW30NC60WD
STMicroelectronics
STGW30NC60WD by STMicroelectronics is an N-CHANNEL IGBT with 600V VCE, 60A IC, and 200W Ptot. Ideal for power control applications, it features a single configuration with built-in diode and a turn-off time of 189ns. The package style is flange mount with through-hole terminals.
FF1000R17IE4DB2BOSA1
Infineon's FF1000R17IE4DB2BOSA1 IGBT features N-CHANNEL configuration with 2 elements, built-in diode, and thermistor. Ideal for power control applications with max VCEsat of 2.45V and max IC of 1390A. Operates in temp range -40 to 150°C, offering high power dissipation up to 6250W.
IKW30N60TFKSA1
IKW30N60TFKSA1 by Infineon Technologies is an N-CHANNEL IGBT transistor with a 600V max collector-emitter voltage and 60A max collector current. It has a nominal turn-off time of 382ns and nominal turn-on time of 50ns, making it ideal for power control applications requiring fast switching speeds. The package style is flange mount with through-hole terminals, suitable for high-power applications up to 175°C operating temperature.
IGW50N60TPXKSA1
IGW50N60TPXKSA1 by Infineon is an N-CHANNEL IGBT with a max voltage of 600V and max current of 100A. It has a turn-off time of 396ns and turn-on time of 60ns, ideal for power control applications. The transistor comes in a rectangular package with through-hole terminals, suitable for flange mount installations at temperatures up to 175°C.
IXXX160N65C4
IXXX160N65C4 by Littelfuse is an N-CHANNEL IGBT with 940W power dissipation, 650V collector-emitter voltage, and 290A collector current. Ideal for high-power applications requiring efficient switching at up to 175°C operating temperature.
NGTB15N120FLWG
NGTB15N120FLWG by Onsemi is an N-CHANNEL IGBT with 156W power dissipation, 1200V collector-emitter voltage, and 30A collector current. Ideal for high-power applications requiring efficient switching capabilities at up to 150°C operating temperature.
FS400R07A1E3_H5
Infineon FS400R07A1E3_H5 IGBT, N-CHANNEL, 650V VCEsat, 500A IC, for POWER CONTROL apps. Features 750W Pdiss, -40 to 150°C temp range, with ton of 200ns and toff of 580ns.
SKM100GB12T4G
Semikron International
SKM100GB12T4G by Semikron is an N-CHANNEL IGBT with 2 elements, built-in diode, VCEsat of 2.1V, and max current of 150A. Ideal for power control applications with a max VCE of 1200V and operating temp up to 175°C. Package style is flange mount with isolated case connection.
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IRGB20B60PD1PBF
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 215 W; Maximum Collector Current (IC): 40 A; Maximum Rise Time (tr): 8 ns;
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 215 W; Maximum Collector Current (IC): 40 A; JEDEC-95 Code: TO-220AB;
IRGB4062DPBF
IRGB4062DPBF by Infineon Technologies is an N-CHANNEL IGBT with a max Collector-Emitter Voltage of 600V and Max Power Dissipation of 250W. It has a single configuration with built-in diode, ideal for power control applications requiring fast switching times (tr: 31ns, tf: 41ns).
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 250 W; Maximum Collector Current (IC): 48 A; JESD-609 Code: e3;
IRGB4056DPBF
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 140 W; Maximum Collector Current (IC): 24 A; Nominal Turn Off Time (toff): 143 ns;
IRGB4061DPBF
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 206 W; Maximum Collector Current (IC): 36 A; Qualification: Not Qualified;
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 206 W; Maximum Collector Current (IC): 36 A; Package Style (Meter): FLANGE MOUNT;
IRGB4059DPBF
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 56 W; Maximum Collector Current (IC): 8 A; Terminal Form: THROUGH-HOLE;
IRGB4060DPBF
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 99 W; Maximum Collector Current (IC): 16 A; Maximum Operating Temperature: 175 Cel;
IRGB4061D
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Collector Current (IC): 36 A; Transistor Element Material: SILICON; Peak Reflow Temperature (C): NOT SPECIFIED;
IRGB30B60K
N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Collector Current (IC): 75 A; Package Style (Meter): FLANGE MOUNT; Package Shape: RECTANGULAR;
IRGB10B60KDPBF
IRGB10B60KDPBF by Infineon is an N-CHANNEL IGBT with 600V max collector-emitter voltage and 22A max collector current. It has a single configuration with built-in diode, ideal for motor control applications. The transistor offers fast switching times of 28ns rise time and 34ns fall time, making it suitable for high-power dissipation up to 156W.
IRGB15B60KD
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Collector Current (IC): 31 A; No. of Terminals: 3; Transistor Element Material: SILICON;
IRGB30B60KPBF
N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 370 W; Maximum Collector Current (IC): 75 A; Maximum Gate-Emitter Voltage: 20 V;
IRGB14C40LPBF
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE AND RESISTOR; Surface Mount: NO; Maximum Power Dissipation (Abs): 125 W; Maximum Collector Current (IC): 20 A; Terminal Position: SINGLE;
IRGB4045DPBF
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 77 W; Maximum Collector Current (IC): 12 A; Nominal Turn On Time (ton): 38 ns;
IRGB15B60KDPBF
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 208 W; Maximum Collector Current (IC): 31 A; JEDEC-95 Code: TO-220AB;
IRGB4055PBF
N-CHANNEL; Surface Mount: NO; Maximum Power Dissipation (Abs): 255 W; Maximum Collector Current (IC): 110 A; Maximum Gate-Emitter Voltage: 30 V; Maximum Gate-Emitter Threshold Voltage: 5 V;
IRGB10B60KD
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Collector Current (IC): 22 A; Case Connection: COLLECTOR; Maximum Operating Temperature: 150 Cel;
IRGB4056D
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Collector Current (IC): 24 A; Maximum Operating Temperature: 175 Cel; No. of Terminals: 3;
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