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IRGB14C40LPBF

Infineon Technologies

IRGB14C40LPBF by Infineon Technologies

IRGB14C40LPBF by Infineon Technologies is an N-CHANNEL IGBT with a max collector-emitter voltage of 370V and a max gate-emitter voltage of 12V. It has a built-in diode and resistor, making it suitable for automotive ignition applications. With a max power dissipation of 125W and operating temperature of 175°C, this transistor offers reliable performance in demanding environments.

Median Price

$1.480

Lifecycle Status

Suppliers In-Stock

6

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 42 parts In-Stock

1+ parts

-

100+ parts

$1.480

1k+ parts

$1.230

10k+ parts

$1.100

42

-

$1.480

$1.230

$1.100

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 470 parts In-Stock

1+ parts

$0.725

100+ parts

-

1k+ parts

-

10k+ parts

-

470

$0.725

-

-

-

Digiode

USA . 803 parts In-Stock

1+ parts

$1.150

100+ parts

-

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-

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803

$1.150

-

-

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Nova Conductors

Japan . 55 parts In-Stock

1+ parts

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55

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Partservice

France . 43 parts In-Stock

1+ parts

-

100+ parts

$2.781

1k+ parts

$2.724

10k+ parts

$2.724

43

-

$2.781

$2.724

$2.724

Micros

Poland . 40 parts In-Stock

1+ parts

-

100+ parts

$2.867

1k+ parts

$2.771

10k+ parts

$2.771

40

-

$2.867

$2.771

$2.771

Distributors (Availability)

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Ampacity Inc.

Singapore . 42 parts In-Stock

1+ parts

$1.030

100+ parts

-

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-

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-

42

$1.030

-

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Corphita

USA . 411 parts In-Stock

1+ parts

$1.089

100+ parts

-

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411

$1.089

-

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Modulus Dynamics

Lithuania . 17,061 parts In-Stock

1+ parts

$1.234

100+ parts

$1.185

1k+ parts

$1.135

10k+ parts

-

17,061

$1.234

$1.185

$1.135

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Continental Prestige Electronics

USA . 1,012 parts In-Stock

1+ parts

$2.270

100+ parts

$1.380

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$0.943

10k+ parts

-

1,012

$2.270

$1.380

$0.943

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Allen Electronics Distributors

USA . 611 parts In-Stock

1+ parts

$3.440

100+ parts

$2.290

1k+ parts

$2.020

10k+ parts

-

611

$3.440

$2.290

$2.020

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Microchip USA

USA . 112 parts In-Stock

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$7.540

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112

$7.540

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S.R.D Solutions

India . 18,000 parts In-Stock

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18,000

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A-Z Elektronik GmbH

Germany . 5,450 parts In-Stock

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5,450

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Perfect Parts

USA . 3,973 parts In-Stock

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3,973

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Alle Elektronik GmbH

Germany . 3,633 parts In-Stock

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3,633

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Netroflash

USA . 100 parts In-Stock

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100

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Assy Fe

Spain . 50 parts In-Stock

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50

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Overview

Looking for a reliable solution for your automotive ignition needs? Look no further than the IRGB14C40LPBF by Infineon Technologies. With its high-quality construction and innovative design, this Insulated Gate Bipolar Transistor offers unmatched performance and durability. Whether you're working on a new project or looking to upgrade your current system, this product is sure to exceed your expectations. Trust in Infineon Technologies to provide you with the best in transistor technology.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides good insulation and protection for the internal components, ensuring durability and reliability in automotive applications.

Polarity or Channel Type: N-CHANNEL

N-channel IGBTs typically have lower on-state voltage drop and higher switching speed, making them efficient for automotive ignition systems.

Configuration: SINGLE WITH BUILT-IN DIODE AND RESISTOR

Simplified design with built-in diode and resistor improves efficiency and reduces component count in automotive ignition circuits.

Transistor Application: AUTOMOTIVE IGNITION

Specifically designed and optimized for automotive ignition systems, ensuring reliable performance and ignition spark control.

Maximum Rise Time (tr): 4000 ns

Fast rise time allows for quick switching and control, crucial for precise ignition timing in automotive applications.

Package Shape: RECTANGULAR

Compact rectangular shape allows for easy mounting and integration into automotive ignition systems.

Terminal Form: THROUGH-HOLE

Through-hole terminals provide secure and reliable connections, suitable for automotive environments with vibrations and temperature variations.

Maximum Power Dissipation (Abs): 125 W

High power dissipation capacity ensures the IGBT can handle the heat generated during operation, making it reliable in automotive ignition systems.

Package Style (Meter): FLANGE MOUNT

Flange mount package style enables easy installation and heat dissipation, ideal for automotive applications where space and thermal management are critical.

Maximum Operating Temperature: 175 °C

High operating temperature range ensures reliability and performance in automotive environments with varying temperature conditions.

Maximum Collector-Emitter Voltage: 370 V

High collector-emitter voltage rating allows the IGBT to handle voltage spikes and surges in automotive ignition circuits.

Transistor Element Material: SILICON

Silicon material offers good thermal and electrical properties, making the IGBT reliable and efficient for automotive ignition applications.

Maximum Gate-Emitter Voltage: 12 V

Suitable gate-emitter voltage rating for driving the IGBT effectively in automotive ignition systems, ensuring proper switching and control.

Maximum Collector Current (IC): 20 A

High collector current rating allows the IGBT to handle high current loads in automotive ignition systems without overheating.

Maximum Gate-Emitter Threshold Voltage: 2.2 V

Low gate-emitter threshold voltage enables efficient and quick switching of the IGBT, essential for precise control in automotive ignition applications.

Terminal Position: SINGLE

Single terminal position simplifies the connection and installation of the IGBT in automotive ignition circuits, reducing complexity and assembly time.

Case Connection: COLLECTOR

Collector case connection provides a stable electrical connection and efficient heat dissipation, improving the overall performance and reliability of the IGBT.

Nominal Turn On Time (ton): 3700 ns

Nominal turn on time ensures precise control and timing of the ignition spark, essential for the proper operation of automotive ignition systems.

Technical Specifications

Insulated Gate Bipolar Transistors (IGBT) IRGB14C40LPBF attributes and parameters. Explore more Insulated Gate Bipolar Transistors (IGBT) devices from Infineon Technologies

Specs

Additional Features:

LOW SATURATION VOLTAGE

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

370 V

Maximum Gate-Emitter Threshold Voltage:

2.2 V

Maximum Gate-Emitter Voltage:

12 V

JEDEC-95 Code:

TO-220AB

JESD-30 Code:

R-PSFM-T3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

175 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Peak Reflow Temperature (C):

NOT SPECIFIED

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Maximum Rise Time (tr):

4000 ns

Sub-Category:

Insulated Gate BIP Transistors

Surface Mount:

NO

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Transistor Application:

AUTOMOTIVE IGNITION

Transistor Element Material:

SILICON

Nominal Turn On Time (ton):

3700 ns

Trade Compliance

IRGB14C40LPBF Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Infineon Technologies

Infineon Technologies AG is a leading global semiconductor manufacturer and provider of comprehensive solutions for automotive, industrial, and consumer applications. Founded in 1999, the company has grown to become one of the largest semiconductor manufacturers in Europe. Infineon is headquartered in Neubiberg, Germany with operations across countries in Europe and Asia Pacific. Infineon provides microelectronics products that address many of today's societal challenges affecting energy efficiency, mobility, security and connectivity. Over the past two decades Infineon has become a major player in the semiconductor industry with an impressive portfolio of innovative technologies. As one of only four companies that produce DRAM chips for automobiles, Infineon produces cutting-edge processors for use in advanced driver assistance systems (ADAS). Likewise, they specialize in providing advanced embedded secure microcontrollers that are essential for connected devices. Furthermore, they offer integrated circuit solutions for industrial power control such as motor controllers and embedded gate drivers.

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Management team

CEO

Jochen Hanebeck

Chief Financial Officer

Sven Schneider

Chief Marketing Officer

Andreas Urschitz

Manufacturer fab locations 19

Fab name Location Fab Initiation Wafer Capacity

Villach 300mm

Fabrication

Fab Initiation

2011

Austria

Villach

Wafer Capacity

11,000

2011

11,000

Kulim 2

Fabrication

Fab Initiation

2016

Malaysia

Kulim

Wafer Capacity

79,500

2016

79,500

Dresden - Module 3

Fabrication

Fab Initiation

1999

Germany

Dresden

Wafer Capacity

58,000

1999

58,000

Villach Building

Fabrication

Fab Initiation

2016

Austria

Villach

Wafer Capacity

2,000

2016

2,000

Regensburg

Fabrication

Fab Initiation

1986

Germany

Regensburg

Wafer Capacity

60,000

1986

60,000

Dresden 200 - Module 1

Fabrication

Fab Initiation

1995

Germany

Dresden

Wafer Capacity

28,000

1995

28,000

Dresden 200 - Module 2

Fabrication

Fab Initiation

1996

Germany

Dresden

Wafer Capacity

28,000

1996

28,000

Building 38

Fabrication

Fab Initiation

2005

Germany

Dresden

Wafer Capacity

500

2005

500

Building 47

Fabrication

Fab Initiation

2005

Germany

Dresden

Wafer Capacity

500

2005

500

Kulim 1

Fabrication

Fab Initiation

2006

Malaysia

Kulim

Wafer Capacity

110,000

2006

110,000

Mesa Facility

Fabrication

Fab Initiation

1990

USA

Mesa

Wafer Capacity

3,000

1990

3,000

Villach 150mm

Fabrication

Fab Initiation

1981

Austria

Villach

Wafer Capacity

35,000

1981

35,000

Villach 200mm

Fabrication

Fab Initiation

1995

Austria

Villach

Wafer Capacity

68,000

1995

68,000

Temecula

Fabrication

Fab Initiation

1995

USA

Temecula

Wafer Capacity

30,000

1995

30,000

Villach 300mm

Fabrication

Fab Initiation

2021

Austria

Villach

Wafer Capacity

2021

Villach 150mm

Fabrication

Fab Initiation

2018

Austria

Villach

Wafer Capacity

5,000

2018

5,000

Kulim 3

Fabrication

Fab Initiation

2024

Malaysia

Kulim

Wafer Capacity

2024

Fab 25

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

31,000

1995

31,000

Dresden - Module 4

Fabrication

Fab Initiation

2026

Germany

Dresden

Wafer Capacity

2026

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