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FB30R06W1E3BOMA1

Infineon Technologies

FB30R06W1E3BOMA1 by Infineon Technologies

Infineon Technologies' FB30R06W1E3BOMA1 is an N-CHANNEL IGBT with 6 elements, max. collector-emitter voltage of 600V, and max. collector current of 39A. It has a nominal turn-off time of 245ns and turn-on time of 42ns, suitable for applications requiring high power switching like motor drives and inverters at up to 175°C operating temperature.

Median Price

$32.899

Lifecycle Status

Suppliers In-Stock

9

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Newark

USA . 14 parts In-Stock

1+ parts

$33.510

100+ parts

$22.160

1k+ parts

$21.540

10k+ parts

-

14

$33.510

$22.160

$21.540

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Farnell

UK . 18 parts In-Stock

1+ parts

$41.130

100+ parts

$31.023

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-

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18

$41.130

$31.023

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Element14

Singapore . 7 parts In-Stock

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$45.810

100+ parts

$32.320

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-

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7

$45.810

$32.320

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Rochester

USA . 45 parts In-Stock

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-

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$20.460

1k+ parts

$18.310

10k+ parts

$17.230

45

-

$20.460

$18.310

$17.230

DigiKey

USA . 45 parts In-Stock

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-

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$26.920

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45

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$26.920

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Verical

USA . 24 parts In-Stock

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-

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$32.288

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24

-

$32.288

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Distributors (In-Stock)

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Digiode

USA . 933 parts In-Stock

1+ parts

$24.538

100+ parts

-

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933

$24.538

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Nova Conductors

Japan . 15 parts In-Stock

1+ parts

$42.010

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15

$42.010

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Vyrian

USA . 2,600 parts In-Stock

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2,600

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Distributors (Availability)

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Aztec Data Supply Inc.

USA . 106 parts In-Stock

1+ parts

$0.830

100+ parts

-

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106

$0.830

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Corohmni

South Africa . 129 parts In-Stock

1+ parts

$0.961

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-

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129

$0.961

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Modulus Dynamics

Lithuania . 16,839 parts In-Stock

1+ parts

$0.967

100+ parts

$0.928

1k+ parts

$0.890

10k+ parts

-

16,839

$0.967

$0.928

$0.890

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Advanced Electronics

New Zealand . 40 parts In-Stock

1+ parts

$0.990

100+ parts

$0.901

1k+ parts

$0.812

10k+ parts

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40

$0.990

$0.901

$0.812

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AZTECH Wire

Italy . 665 parts In-Stock

1+ parts

$13.895

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665

$13.895

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Ampacity Inc.

Singapore . 25 parts In-Stock

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$21.960

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25

$21.960

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Semicontronic

India . 25 parts In-Stock

1+ parts

$21.960

100+ parts

$21.411

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$21.301

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25

$21.960

$21.411

$21.301

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Corphita

USA . 306 parts In-Stock

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$23.247

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306

$23.247

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Component Stockers USA

USA . 68 parts In-Stock

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$34.120

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68

$34.120

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Continental Prestige Electronics

USA . 20 parts In-Stock

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$35.000

100+ parts

$27.770

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20

$35.000

$27.770

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Microchip USA

USA . 4,919 parts In-Stock

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$101.821

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4,919

$101.821

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QUARKTWIN TECHNOLOGY LTD

USA . 24,904 parts In-Stock

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24,904

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Authorized Procurement Solutions

USA . 8,000 parts In-Stock

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Robosynatics

Brazil . 5,190 parts In-Stock

1+ parts

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100+ parts

$1.834

1k+ parts

$1.796

10k+ parts

$1.796

5,190

-

$1.834

$1.796

$1.796

Lucentia Tech

USA . 5,190 parts In-Stock

1+ parts

-

100+ parts

$1.834

1k+ parts

$1.796

10k+ parts

$1.796

5,190

-

$1.834

$1.796

$1.796

Argo Parts USA

USA . 4,351 parts In-Stock

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Perfect Parts

USA . 81 parts In-Stock

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Overview

Experience superior quality and performance with the FB30R06W1E3BOMA1 by Infineon Technologies. As a leading manufacturer in the industry, Infineon offers reliable and innovative solutions for Insulated Gate Bipolar Transistors (IGBT). This complex N-CHANNEL transistor boasts a fast turn-off time of 245 ns and a maximum collector-emitter voltage of 600 V, making it ideal for a variety of applications. With 6 elements and a package style of flange mount, this product provides exceptional value and efficiency to customers looking for high-quality electronic components.

Feature Benefit Bullets

Polarity or Channel Type: N-CHANNEL

N-CHANNEL IGBTs have a higher electron mobility than P-CHANNEL IGBTs, leading to faster switching speeds and lower on-state losses.

Configuration: COMPLEX

The complex configuration allows for better control over switching characteristics, making the IGBT suitable for a wide range of applications.

Package Shape: RECTANGULAR

The rectangular package shape provides easy mounting and integration into electronic systems.

Nominal Turn Off Time (toff): 245 ns

The low turn-off time helps in reducing switching losses and improving the efficiency of the IGBT.

No. of Terminals: 23

More terminals allow for better connectivity and control over the IGBT in complex circuits.

Package Style (Meter): FLANGE MOUNT

The flange mount package style provides robust mechanical support and ease of installation in industrial settings.

Maximum Operating Temperature: 175 °C

The high maximum operating temperature ensures reliability and performance in harsh environments.

Maximum Collector-Emitter Voltage: 600 V

The high voltage rating allows for use in high-power applications without risk of breakdown.

Transistor Element Material: SILICON

Silicon is a common and reliable material choice for power transistors, ensuring stability and longevity.

Maximum Collector Current (IC): 39 A

The high collector current rating allows for handling of large currents without overheating or damage.

Terminal Position: UPPER

The upper terminal position makes it easier to control and interface with the IGBT in electronic systems.

Case Connection: ISOLATED

The isolated case connection provides electrical insulation and safety in high-voltage applications.

Nominal Turn On Time (ton): 42 ns

The low turn-on time ensures quick response and efficient switching characteristics of the IGBT.

Technical Specifications

Insulated Gate Bipolar Transistors (IGBT) FB30R06W1E3BOMA1 attributes and parameters. Explore more Insulated Gate Bipolar Transistors (IGBT) devices from Infineon Technologies

Specs

Case Connection:

ISOLATED

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

600 V

Configuration:

JESD-30 Code:

R-XUFM-X23

No. of Elements:

6

No. of Terminals:

23

Maximum Operating Temperature:

175 Cel

Package Body Material:

UNSPECIFIED

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Peak Reflow Temperature (C):

NOT SPECIFIED

Polarity or Channel Type:

Qualification:

Not Qualified

Surface Mount:

NO

Terminal Form:

UNSPECIFIED

Terminal Position:

UPPER

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Transistor Element Material:

SILICON

Nominal Turn Off Time (toff):

245 ns

Nominal Turn On Time (ton):

42 ns

Trade Compliance

FB30R06W1E3BOMA1 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Infineon Technologies

Infineon Technologies AG is a leading global semiconductor manufacturer and provider of comprehensive solutions for automotive, industrial, and consumer applications. Founded in 1999, the company has grown to become one of the largest semiconductor manufacturers in Europe. Infineon is headquartered in Neubiberg, Germany with operations across countries in Europe and Asia Pacific. Infineon provides microelectronics products that address many of today's societal challenges affecting energy efficiency, mobility, security and connectivity. Over the past two decades Infineon has become a major player in the semiconductor industry with an impressive portfolio of innovative technologies. As one of only four companies that produce DRAM chips for automobiles, Infineon produces cutting-edge processors for use in advanced driver assistance systems (ADAS). Likewise, they specialize in providing advanced embedded secure microcontrollers that are essential for connected devices. Furthermore, they offer integrated circuit solutions for industrial power control such as motor controllers and embedded gate drivers.

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Management team

CEO

Jochen Hanebeck

Chief Financial Officer

Sven Schneider

Chief Marketing Officer

Andreas Urschitz

Manufacturer fab locations 19

Fab name Location Fab Initiation Wafer Capacity

Villach 300mm

Fabrication

Fab Initiation

2011

Austria

Villach

Wafer Capacity

11,000

2011

11,000

Kulim 2

Fabrication

Fab Initiation

2016

Malaysia

Kulim

Wafer Capacity

79,500

2016

79,500

Dresden - Module 3

Fabrication

Fab Initiation

1999

Germany

Dresden

Wafer Capacity

58,000

1999

58,000

Villach Building

Fabrication

Fab Initiation

2016

Austria

Villach

Wafer Capacity

2,000

2016

2,000

Regensburg

Fabrication

Fab Initiation

1986

Germany

Regensburg

Wafer Capacity

60,000

1986

60,000

Dresden 200 - Module 1

Fabrication

Fab Initiation

1995

Germany

Dresden

Wafer Capacity

28,000

1995

28,000

Dresden 200 - Module 2

Fabrication

Fab Initiation

1996

Germany

Dresden

Wafer Capacity

28,000

1996

28,000

Building 38

Fabrication

Fab Initiation

2005

Germany

Dresden

Wafer Capacity

500

2005

500

Building 47

Fabrication

Fab Initiation

2005

Germany

Dresden

Wafer Capacity

500

2005

500

Kulim 1

Fabrication

Fab Initiation

2006

Malaysia

Kulim

Wafer Capacity

110,000

2006

110,000

Mesa Facility

Fabrication

Fab Initiation

1990

USA

Mesa

Wafer Capacity

3,000

1990

3,000

Villach 150mm

Fabrication

Fab Initiation

1981

Austria

Villach

Wafer Capacity

35,000

1981

35,000

Villach 200mm

Fabrication

Fab Initiation

1995

Austria

Villach

Wafer Capacity

68,000

1995

68,000

Temecula

Fabrication

Fab Initiation

1995

USA

Temecula

Wafer Capacity

30,000

1995

30,000

Villach 300mm

Fabrication

Fab Initiation

2021

Austria

Villach

Wafer Capacity

2021

Villach 150mm

Fabrication

Fab Initiation

2018

Austria

Villach

Wafer Capacity

5,000

2018

5,000

Kulim 3

Fabrication

Fab Initiation

2024

Malaysia

Kulim

Wafer Capacity

2024

Fab 25

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

31,000

1995

31,000

Dresden - Module 4

Fabrication

Fab Initiation

2026

Germany

Dresden

Wafer Capacity

2026

Category top products 20

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