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FB30R06W1E3ENG

Infineon Technologies

FB30R06W1E3ENG by Infineon Technologies

Infineon's FB30R06W1E3ENG IGBT features 600V VCE, 39A IC, and 115W power dissipation. Ideal for high-power applications like motor drives due to its fast turn-off time of 245ns and low VCEsat of 2V. With an operating temperature range from -40°C to 150°C, it ensures reliable performance in various environments.

Median Price

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Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

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Vyrian

USA . 1,236 parts In-Stock

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Nova Conductors

Japan . 500 parts In-Stock

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500

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Digiode

USA . 12 parts In-Stock

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12

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Distributors (Availability)

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Aztec Data Supply Inc.

USA . 377 parts In-Stock

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$1.490

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377

$1.490

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Modulus Dynamics

Lithuania . 13,605 parts In-Stock

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$1.715

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$1.646

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$1.578

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13,605

$1.715

$1.646

$1.578

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Corohmni

South Africa . 1,241 parts In-Stock

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$1.972

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$1.972

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AZTECH Wire

Italy . 640 parts In-Stock

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$17.434

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640

$17.434

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Ampacity Inc.

Singapore . 201 parts In-Stock

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$22.050

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201

$22.050

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Semicontronic

India . 229 parts In-Stock

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$63.050

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$61.474

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$61.158

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229

$63.050

$61.474

$61.158

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Continental Prestige Electronics

USA . 5,570 parts In-Stock

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5,570

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Advanced Electronics

New Zealand . 4,413 parts In-Stock

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Argo Parts USA

USA . 2,523 parts In-Stock

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Corphita

USA . 344 parts In-Stock

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344

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Bastille Electronics

Australia . 10 parts In-Stock

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Overview

Unleash the power of the FB30R06W1E3ENG by Infineon Technologies, a top-tier player in the field of Insulated Gate Bipolar Transistors (IGBT). With its N-Channel design and impressive maximum VCEsat of 2V, this component offers unparalleled performance and reliability. Whether you're looking to enhance your industrial machinery, renewable energy systems, or electric vehicle applications, this IGBT delivers exceptional value, efficiency, and durability. Trust in Infineon Technologies to bring cutting-edge technology to your projects and propel your innovations to new heights.

Feature Benefit Bullets

Polarity or Channel Type:

N-Channel - Enhances efficiency and performance in various applications.

Maximum VCEsat:

2 V - Low saturation voltage results in reduced power losses.

Nominal Turn Off Time (toff):

245 ns - Fast turn-off time improves switching capabilities.

Maximum Power Dissipation (Abs):

115 W - Handles high power levels effectively.

Maximum Operating Temperature:

150 °C - Suitable for operation in high temperature environments.

Maximum Collector-Emitter Voltage:

600 V - Can withstand high voltage levels safely.

Transistor Element Material:

SILICON - Offers reliability and durability in operation.

Maximum Gate-Emitter Voltage:

20 V - Ensures reliable and stable gate control.

Minimum Operating Temperature:

40 °C - Operates efficiently even in low temperature conditions.

Maximum Collector Current (IC):

39 A - Handles high current loads without issues.

Maximum Gate-Emitter Threshold Voltage:

6.5 V - Provides precise gate control for optimal performance.

Case Connection:

ISOLATED - Helps in preventing short circuits and ensuring safety.

Nominal Turn On Time (ton):

42 ns - Quick turn-on time improves response and efficiency.

Technical Specifications

Insulated Gate Bipolar Transistors (IGBT) FB30R06W1E3ENG attributes and parameters. Explore more Insulated Gate Bipolar Transistors (IGBT) devices from Infineon Technologies

Specs

Case Connection:

ISOLATED

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

600 V

Maximum Gate-Emitter Threshold Voltage:

6.5 V

Maximum Gate-Emitter Voltage:

20 V

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-40 Cel

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Transistor Element Material:

SILICON

Nominal Turn Off Time (toff):

245 ns

Nominal Turn On Time (ton):

42 ns

Maximum VCEsat:

2 V

Trade Compliance

FB30R06W1E3ENG Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Infineon Technologies

Infineon Technologies AG is a leading global semiconductor manufacturer and provider of comprehensive solutions for automotive, industrial, and consumer applications. Founded in 1999, the company has grown to become one of the largest semiconductor manufacturers in Europe. Infineon is headquartered in Neubiberg, Germany with operations across countries in Europe and Asia Pacific. Infineon provides microelectronics products that address many of today's societal challenges affecting energy efficiency, mobility, security and connectivity. Over the past two decades Infineon has become a major player in the semiconductor industry with an impressive portfolio of innovative technologies. As one of only four companies that produce DRAM chips for automobiles, Infineon produces cutting-edge processors for use in advanced driver assistance systems (ADAS). Likewise, they specialize in providing advanced embedded secure microcontrollers that are essential for connected devices. Furthermore, they offer integrated circuit solutions for industrial power control such as motor controllers and embedded gate drivers.

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Management team

CEO

Jochen Hanebeck

Chief Financial Officer

Sven Schneider

Chief Marketing Officer

Andreas Urschitz

Manufacturer fab locations 19

Fab name Location Fab Initiation Wafer Capacity

Villach 300mm

Fabrication

Fab Initiation

2011

Austria

Villach

Wafer Capacity

11,000

2011

11,000

Kulim 2

Fabrication

Fab Initiation

2016

Malaysia

Kulim

Wafer Capacity

79,500

2016

79,500

Dresden - Module 3

Fabrication

Fab Initiation

1999

Germany

Dresden

Wafer Capacity

58,000

1999

58,000

Villach Building

Fabrication

Fab Initiation

2016

Austria

Villach

Wafer Capacity

2,000

2016

2,000

Regensburg

Fabrication

Fab Initiation

1986

Germany

Regensburg

Wafer Capacity

60,000

1986

60,000

Dresden 200 - Module 1

Fabrication

Fab Initiation

1995

Germany

Dresden

Wafer Capacity

28,000

1995

28,000

Dresden 200 - Module 2

Fabrication

Fab Initiation

1996

Germany

Dresden

Wafer Capacity

28,000

1996

28,000

Building 38

Fabrication

Fab Initiation

2005

Germany

Dresden

Wafer Capacity

500

2005

500

Building 47

Fabrication

Fab Initiation

2005

Germany

Dresden

Wafer Capacity

500

2005

500

Kulim 1

Fabrication

Fab Initiation

2006

Malaysia

Kulim

Wafer Capacity

110,000

2006

110,000

Mesa Facility

Fabrication

Fab Initiation

1990

USA

Mesa

Wafer Capacity

3,000

1990

3,000

Villach 150mm

Fabrication

Fab Initiation

1981

Austria

Villach

Wafer Capacity

35,000

1981

35,000

Villach 200mm

Fabrication

Fab Initiation

1995

Austria

Villach

Wafer Capacity

68,000

1995

68,000

Temecula

Fabrication

Fab Initiation

1995

USA

Temecula

Wafer Capacity

30,000

1995

30,000

Villach 300mm

Fabrication

Fab Initiation

2021

Austria

Villach

Wafer Capacity

2021

Villach 150mm

Fabrication

Fab Initiation

2018

Austria

Villach

Wafer Capacity

5,000

2018

5,000

Kulim 3

Fabrication

Fab Initiation

2024

Malaysia

Kulim

Wafer Capacity

2024

Fab 25

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

31,000

1995

31,000

Dresden - Module 4

Fabrication

Fab Initiation

2026

Germany

Dresden

Wafer Capacity

2026

Category top products 20

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