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FGL60N100BNTD

Onsemi

FGL60N100BNTD by Onsemi

FGL60N100BNTD by Onsemi is an N-CHANNEL IGBT with 1000V VCE, 60A IC, and 460ns ton. Ideal for power control applications, it features a single configuration with built-in diode in a rectangular package suitable for flange mount installations.

Median Price

$4.590

Lifecycle Status

Suppliers In-Stock

8

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 119 parts In-Stock

1+ parts

$4.590

100+ parts

$4.320

1k+ parts

$3.900

10k+ parts

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119

$4.590

$4.320

$3.900

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Distributors (In-Stock)

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Nova Conductors

Japan . 50 parts In-Stock

1+ parts

$3.606

100+ parts

-

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50

$3.606

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Digiode

USA . 1,505 parts In-Stock

1+ parts

$4.360

100+ parts

-

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1,505

$4.360

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Bristol Electronics

USA . 10 parts In-Stock

1+ parts

$9.600

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10

$9.600

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Chip Stock

USA . 3,555 parts In-Stock

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3,555

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Vyrian

USA . 501 parts In-Stock

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501

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ACDS - Activité Composants Distribution Service

France . 2 parts In-Stock

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Holdelec - ElecDif-Pro

France . 2 parts In-Stock

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Distributors (Availability)

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Aztec Data Supply Inc.

USA . 262 parts In-Stock

1+ parts

$1.915

100+ parts

-

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262

$1.915

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Corohmni

South Africa . 269 parts In-Stock

1+ parts

$3.534

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269

$3.534

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Continental Prestige Electronics

USA . 5,522 parts In-Stock

1+ parts

$3.606

100+ parts

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$3.534

5,522

$3.606

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$3.534

Argo Parts USA

USA . 4,869 parts In-Stock

1+ parts

$3.606

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-

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4,869

$3.606

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Netroflash

USA . 50 parts In-Stock

1+ parts

$3.606

100+ parts

$3.534

1k+ parts

-

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50

$3.606

$3.534

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Ampacity Inc.

Singapore . 119 parts In-Stock

1+ parts

$3.900

100+ parts

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119

$3.900

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Semicontronic

India . 119 parts In-Stock

1+ parts

$3.900

100+ parts

$3.802

1k+ parts

$3.783

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-

119

$3.900

$3.802

$3.783

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Corphita

USA . 2,676 parts In-Stock

1+ parts

$4.131

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2,676

$4.131

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Advanced Electronics

New Zealand . 270 parts In-Stock

1+ parts

$5.054

100+ parts

$4.650

1k+ parts

$4.357

10k+ parts

-

270

$5.054

$4.650

$4.357

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Component Stockers USA

USA . 4,229 parts In-Stock

1+ parts

$9.780

100+ parts

$9.290

1k+ parts

$8.990

10k+ parts

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4,229

$9.780

$9.290

$8.990

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AZTECH Wire

Italy . 501 parts In-Stock

1+ parts

$17.376

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501

$17.376

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QUARKTWIN TECHNOLOGY LTD

USA . 27,973 parts In-Stock

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27,973

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Robosynatics

Brazil . 25,603 parts In-Stock

1+ parts

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$1.372

1k+ parts

$1.344

10k+ parts

$1.344

25,603

-

$1.372

$1.344

$1.344

Lucentia Tech

USA . 25,603 parts In-Stock

1+ parts

-

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$1.372

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$1.344

10k+ parts

$1.344

25,603

-

$1.372

$1.344

$1.344

Kepictronics

USA . 21,000 parts In-Stock

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Metaverse IC Inc.

Canada . 10,000 parts In-Stock

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S.R.D Solutions

India . 8,000 parts In-Stock

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Problanco Electronics

Mexico . 5,734 parts In-Stock

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Glotronic Ltd.

UK . 3,900 parts In-Stock

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3,900

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TANS Electronics

Latvia . 3,463 parts In-Stock

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Perfect Parts

USA . 2,520 parts In-Stock

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Authorized Procurement Solutions

USA . 1,500 parts In-Stock

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Infinite Electronics LLP (Excess)

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Kulean Microsystems

USA . 917 parts In-Stock

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SupplyDigital Components

Austria . 497 parts In-Stock

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UHIMA Technologies

Türkiye . 477 parts In-Stock

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Microchip USA

USA . 242 parts In-Stock

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Supply Digital

USA . 85 parts In-Stock

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Assy Fe

Spain . 1 parts In-Stock

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Overview

Enhance your power control applications with the FGL60N100BNTD from Onsemi. As a leading manufacturer in the industry, Onsemi ensures top-notch quality and reliability in their Insulated Gate Bipolar Transistors (IGBT). With a single configuration and built-in diode, this transistor offers seamless operation and efficiency in various power control tasks. Experience the superior performance and value that Onsemi provides, making the FGL60N100BNTD an essential component for your projects.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides good insulation and protection for the internal components, enhancing the durability and reliability of the IGBT.

Polarity or Channel Type: N-CHANNEL

N-channel IGBTs are known for their high efficiency and fast switching speeds, making them suitable for power control applications.

Configuration: SINGLE WITH BUILT-IN DIODE

Having a built-in diode simplifies circuit design and protects against reverse voltage spikes, improving the overall performance of the power control system.

Transistor Application: POWER CONTROL

Designed specifically for power control applications, this IGBT offers high current and voltage ratings, making it ideal for switching high power loads.

Package Shape: RECTANGULAR

The rectangular shape allows for easy mounting and integration into existing circuit designs, providing flexibility in layout and installation.

Terminal Form: THROUGH-HOLE

Through-hole terminals provide a strong and reliable connection to the circuit board, ensuring stable operation under high currents and temperatures.

Nominal Turn Off Time (toff): 760 ns

The fast turn-off time of 760 ns enhances the efficiency of the power control system, reducing power dissipation and improving overall performance.

Maximum Operating Temperature: 150 °C

With a maximum operating temperature of 150°C, this IGBT can withstand high thermal stress without compromising its electrical performance, ensuring reliable operation in harsh environments.

Maximum Collector-Emitter Voltage: 1000 V

The high collector-emitter voltage rating of 1000 V allows the IGBT to handle high voltage applications with ease, making it suitable for a wide range of power control tasks.

Transistor Element Material: SILICON

Silicon is a commonly used semiconductor material known for its high temperature stability and low power loss, making it an ideal choice for power control applications.

Maximum Collector Current (IC): 60 A

With a maximum collector current rating of 60 A, this IGBT can handle high current loads without overheating, ensuring reliable performance in power control circuits.

Terminal Finish: MATTE TIN

The matte tin finish provides good conductivity and corrosion resistance, ensuring a stable connection between the IGBT and the circuit board for long-term reliability.

Terminal Position: SINGLE

The single terminal position simplifies installation and reduces the risk of connection errors, ensuring a secure and reliable electrical connection in the power control system.

Nominal Turn On Time (ton): 460 ns

The fast turn-on time of 460 ns allows the IGBT to switch on quickly, reducing switching losses and improving the overall efficiency of the power control system.

Technical Specifications

Insulated Gate Bipolar Transistors (IGBT) FGL60N100BNTD attributes and parameters. Explore more Insulated Gate Bipolar Transistors (IGBT) devices from Onsemi

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

1000 V

JEDEC-95 Code:

TO-264AA

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

Qualification:

Not Qualified

Surface Mount:

NO

Terminal Finish:

MATTE TIN

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

POWER CONTROL

Transistor Element Material:

SILICON

Nominal Turn Off Time (toff):

760 ns

Nominal Turn On Time (ton):

460 ns

Trade Compliance

FGL60N100BNTD Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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