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SGP07N120XKSA1

Infineon Technologies

SGP07N120XKSA1 by Infineon Technologies

Infineon's SGP07N120XKSA1 is an N-CHANNEL IGBT transistor with 1200V max collector-emitter voltage and 16.5A max collector current. Ideal for power control applications, it has a turn-off time of 520ns and turn-on time of 56ns, operating up to 150°C.

Median Price

$3.200

Lifecycle Status

Suppliers In-Stock

11

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 260 parts In-Stock

1+ parts

$1.400

100+ parts

$1.370

1k+ parts

$1.340

10k+ parts

-

260

$1.400

$1.370

$1.340

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Farnell

UK . 1,111 parts In-Stock

1+ parts

$3.200

100+ parts

$2.000

1k+ parts

$1.660

10k+ parts

-

1,111

$3.200

$2.000

$1.660

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Element14

Singapore . 618 parts In-Stock

1+ parts

$5.360

100+ parts

$3.640

1k+ parts

$3.230

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618

$5.360

$3.640

$3.230

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Distributors (In-Stock)

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Digiode

USA . 102 parts In-Stock

1+ parts

$2.080

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-

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102

$2.080

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Nova Conductors

Japan . 10 parts In-Stock

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$3.000

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10

$3.000

-

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TME

Poland . 1 parts In-Stock

1+ parts

$3.540

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1

$3.540

-

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Vyrian

USA . 5,742 parts In-Stock

1+ parts

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5,742

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HZD GmbH

Germany . 1,900 parts In-Stock

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1,900

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Schukat

Germany . 730 parts In-Stock

1+ parts

-

100+ parts

$2.074

1k+ parts

$1.999

10k+ parts

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730

-

$2.074

$1.999

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Holdelec - ElecDif-Pro

France . 8 parts In-Stock

1+ parts

-

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8

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ACDS - Activité Composants Distribution Service

France . 8 parts In-Stock

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8

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Distributors (Availability)

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Advanced Electronics

New Zealand . 350 parts In-Stock

1+ parts

$0.325

100+ parts

$0.309

1k+ parts

$0.309

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350

$0.325

$0.309

$0.309

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Modulus Dynamics

Lithuania . 9,705 parts In-Stock

1+ parts

$0.575

100+ parts

$0.552

1k+ parts

$0.529

10k+ parts

-

9,705

$0.575

$0.552

$0.529

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Aztec Data Supply Inc.

USA . 216 parts In-Stock

1+ parts

$1.444

100+ parts

-

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216

$1.444

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Corohmni

South Africa . 161 parts In-Stock

1+ parts

$1.517

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161

$1.517

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Ampacity Inc.

Singapore . 2 parts In-Stock

1+ parts

$1.860

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2

$1.860

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Corphita

USA . 377 parts In-Stock

1+ parts

$1.971

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377

$1.971

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Continental Prestige Electronics

USA . 4,791 parts In-Stock

1+ parts

$3.000

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$2.940

4,791

$3.000

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-

$2.940

Argo Parts USA

USA . 1,833 parts In-Stock

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$3.000

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1,833

$3.000

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Semicontronic

India . 2 parts In-Stock

1+ parts

$4.050

100+ parts

$3.949

1k+ parts

$3.928

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2

$4.050

$3.949

$3.928

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AZTECH Wire

Italy . 271 parts In-Stock

1+ parts

$12.136

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271

$12.136

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QUARKTWIN TECHNOLOGY LTD

USA . 13,735 parts In-Stock

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Microchip USA

USA . 9,132 parts In-Stock

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A-Z Elektronik GmbH

Germany . 4,968 parts In-Stock

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4,968

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Authorized Procurement Solutions

USA . 3,000 parts In-Stock

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3,000

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Perfect Parts

USA . 625 parts In-Stock

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625

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Kepictronics

USA . 399 parts In-Stock

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399

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Netroflash

USA . 100 parts In-Stock

1+ parts

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100+ parts

$2.940

1k+ parts

$2.850

10k+ parts

$2.790

100

-

$2.940

$2.850

$2.790

Overview

Unleash the power of cutting-edge technology with the SGP07N120XKSA1 by Infineon Technologies. As a leading manufacturer, Infineon's Insulated Gate Bipolar Transistor (IGBT) offers unparalleled quality and reliability for power control applications. With a maximum collector-emitter voltage of 1200V and a nominal turn off time of 520ns, this N-channel transistor is designed to optimize performance and efficiency. Whether you're in the automotive, industrial, or renewable energy sector, this product's value lies in its ability to deliver superior power management and control. Elevate your systems with the SGP07N120XKSA1 and experience the benefits of Infineon's innovation firsthand.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides good insulation and protection for the internal components of the transistor, ensuring long-term reliability and durability.

Polarity or Channel Type: N-CHANNEL

N-CHANNEL IGBTs typically have lower ON-state voltage drop and faster switching speeds, making them suitable for high-power applications.

Transistor Application: POWER CONTROL

Designed specifically for power control applications, ensuring efficient and reliable operation in controlling high power levels.

Maximum Operating Temperature: 150 °C

Can operate efficiently at elevated temperatures, making it suitable for applications where heat dissipation is a concern.

Maximum Collector-Emitter Voltage: 1200 V

Can handle high voltage levels, making it suitable for high power applications where voltage spikes may occur.

Maximum Collector Current (IC): 16.5 A

Capable of handling high current levels, making it suitable for power control applications that require high current handling capacity.

Technical Specifications

Insulated Gate Bipolar Transistors (IGBT) SGP07N120XKSA1 attributes and parameters. Explore more Insulated Gate Bipolar Transistors (IGBT) devices from Infineon Technologies

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

1200 V

Configuration:

JEDEC-95 Code:

TO-220AB

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

Qualification:

Not Qualified

Surface Mount:

NO

Terminal Finish:

TIN

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

POWER CONTROL

Transistor Element Material:

SILICON

Nominal Turn Off Time (toff):

520 ns

Nominal Turn On Time (ton):

56 ns

Trade Compliance

SGP07N120XKSA1 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Infineon Technologies

Infineon Technologies AG is a leading global semiconductor manufacturer and provider of comprehensive solutions for automotive, industrial, and consumer applications. Founded in 1999, the company has grown to become one of the largest semiconductor manufacturers in Europe. Infineon is headquartered in Neubiberg, Germany with operations across countries in Europe and Asia Pacific. Infineon provides microelectronics products that address many of today's societal challenges affecting energy efficiency, mobility, security and connectivity. Over the past two decades Infineon has become a major player in the semiconductor industry with an impressive portfolio of innovative technologies. As one of only four companies that produce DRAM chips for automobiles, Infineon produces cutting-edge processors for use in advanced driver assistance systems (ADAS). Likewise, they specialize in providing advanced embedded secure microcontrollers that are essential for connected devices. Furthermore, they offer integrated circuit solutions for industrial power control such as motor controllers and embedded gate drivers.

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Management team

CEO

Jochen Hanebeck

Chief Financial Officer

Sven Schneider

Chief Marketing Officer

Andreas Urschitz

Manufacturer fab locations 19

Fab name Location Fab Initiation Wafer Capacity

Villach 300mm

Fabrication

Fab Initiation

2011

Austria

Villach

Wafer Capacity

11,000

2011

11,000

Kulim 2

Fabrication

Fab Initiation

2016

Malaysia

Kulim

Wafer Capacity

79,500

2016

79,500

Dresden - Module 3

Fabrication

Fab Initiation

1999

Germany

Dresden

Wafer Capacity

58,000

1999

58,000

Villach Building

Fabrication

Fab Initiation

2016

Austria

Villach

Wafer Capacity

2,000

2016

2,000

Regensburg

Fabrication

Fab Initiation

1986

Germany

Regensburg

Wafer Capacity

60,000

1986

60,000

Dresden 200 - Module 1

Fabrication

Fab Initiation

1995

Germany

Dresden

Wafer Capacity

28,000

1995

28,000

Dresden 200 - Module 2

Fabrication

Fab Initiation

1996

Germany

Dresden

Wafer Capacity

28,000

1996

28,000

Building 38

Fabrication

Fab Initiation

2005

Germany

Dresden

Wafer Capacity

500

2005

500

Building 47

Fabrication

Fab Initiation

2005

Germany

Dresden

Wafer Capacity

500

2005

500

Kulim 1

Fabrication

Fab Initiation

2006

Malaysia

Kulim

Wafer Capacity

110,000

2006

110,000

Mesa Facility

Fabrication

Fab Initiation

1990

USA

Mesa

Wafer Capacity

3,000

1990

3,000

Villach 150mm

Fabrication

Fab Initiation

1981

Austria

Villach

Wafer Capacity

35,000

1981

35,000

Villach 200mm

Fabrication

Fab Initiation

1995

Austria

Villach

Wafer Capacity

68,000

1995

68,000

Temecula

Fabrication

Fab Initiation

1995

USA

Temecula

Wafer Capacity

30,000

1995

30,000

Villach 300mm

Fabrication

Fab Initiation

2021

Austria

Villach

Wafer Capacity

2021

Villach 150mm

Fabrication

Fab Initiation

2018

Austria

Villach

Wafer Capacity

5,000

2018

5,000

Kulim 3

Fabrication

Fab Initiation

2024

Malaysia

Kulim

Wafer Capacity

2024

Fab 25

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

31,000

1995

31,000

Dresden - Module 4

Fabrication

Fab Initiation

2026

Germany

Dresden

Wafer Capacity

2026

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