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SGP07N120XK

Infineon Technologies

SGP07N120XK by Infineon Technologies

Infineon's SGP07N120XK is an N-CHANNEL IGBT with 1200V VCE, 16.5A IC, and 56ns ton for POWER CONTROL applications. It has a PLASTIC/EPOXY body, SINGLE configuration, and THROUGH-HOLE terminals in a RECTANGULAR package style.

Median Price

-

Lifecycle Status

EOL

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

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Vyrian

USA . 822 parts In-Stock

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Digiode

USA . 794 parts In-Stock

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Nova Conductors

Japan . 50 parts In-Stock

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50

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Distributors (Availability)

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Aztec Data Supply Inc.

USA . 2,816 parts In-Stock

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$1.395

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$1.395

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Modulus Dynamics

Lithuania . 8,604 parts In-Stock

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$1.645

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$1.579

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$1.513

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$1.645

$1.579

$1.513

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Corohmni

South Africa . 103 parts In-Stock

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$1.750

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AZTECH Wire

Italy . 808 parts In-Stock

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$5.573

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808

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Ampacity Inc.

Singapore . 1,633 parts In-Stock

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$12.050

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$12.050

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Argo Parts USA

USA . 4,981 parts In-Stock

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Aranea Global

USA . 1,000 parts In-Stock

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Corphita

USA . 607 parts In-Stock

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Continental Prestige Electronics

USA . 485 parts In-Stock

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Overview

Unlock the power of advanced technology with the SGP07N120XK from Infineon Technologies. As a leader in the industry, Infineon delivers top-quality Insulated Gate Bipolar Transistors (IGBT) like this one, perfect for power control applications. With a maximum collector-emitter voltage of 1200V and a nominal turn off time of 520ns, this N-channel transistor offers unmatched performance and reliability. Whether you're designing industrial machinery or renewable energy systems, the SGP07N120XK provides the value, benefits, and advantages you need to take your project to the next level.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material makes this IGBT lightweight and durable, ideal for applications where weight and space are important factors.

Polarity or Channel Type: N-CHANNEL

N-channel IGBTs generally have lower conduction losses and higher efficiency compared to P-channel IGBTs, making this product a good choice for power control applications that require high efficiency.

Configuration: SINGLE

The single configuration simplifies the design and installation process, making this IGBT easy to use for power control applications.

Transistor Application: POWER CONTROL

Designed specifically for power control applications, this IGBT is optimized for managing and regulating power in various electronic systems effectively.

Package Shape: RECTANGULAR

The rectangular shape of the package allows for easy mounting and installation in a variety of configurations, enhancing the versatility of this IGBT.

Terminal Form: THROUGH-HOLE

The through-hole terminal form provides a secure and reliable connection, ensuring stable performance and longevity of the IGBT in power control applications.

Nominal Turn Off Time (toff): 520 ns

The fast turn-off time of 520 ns enables precise control and quick response in power switching applications, making this IGBT suitable for high-speed operations.

No. of Terminals: 3

The 3 terminals provide a simple and straightforward connection setup, facilitating easy integration into power control circuits.

Package Style (Meter): FLANGE MOUNT

The flange mount package style offers a secure and stable mounting option, allowing for efficient heat dissipation and enhanced reliability in power control applications.

Maximum Collector-Emitter Voltage: 1200 V

The high maximum collector-emitter voltage of 1200 V makes this IGBT suitable for handling high power loads and voltages in power control applications.

Transistor Element Material: SILICON

Silicon is a reliable and widely used material for transistor elements, offering excellent performance and durability in power control applications.

Maximum Collector Current (IC): 16.5 A

With a maximum collector current of 16.5 A, this IGBT is capable of handling high current loads, making it ideal for applications that require robust power control.

Terminal Position: SINGLE

The single terminal position simplifies the connection and installation process, ensuring easy integration into power control circuits.

Case Connection: COLLECTOR

The collector case connection provides a secure grounding point, enhancing the stability and reliability of the IGBT in power control applications.

Nominal Turn On Time (ton): 56 ns

The fast turn-on time of 56 ns allows for quick and efficient power switching, improving the overall performance and responsiveness of this IGBT in power control applications.

Technical Specifications

Insulated Gate Bipolar Transistors (IGBT) SGP07N120XK attributes and parameters. Explore more Insulated Gate Bipolar Transistors (IGBT) devices from Infineon Technologies

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

1200 V

Configuration:

JEDEC-95 Code:

TO-220AB

JESD-30 Code:

R-PSFM-T3

No. of Elements:

1

No. of Terminals:

3

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Peak Reflow Temperature (C):

NOT SPECIFIED

Polarity or Channel Type:

Surface Mount:

NO

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Transistor Application:

POWER CONTROL

Transistor Element Material:

SILICON

Nominal Turn Off Time (toff):

520 ns

Nominal Turn On Time (ton):

56 ns

Trade Compliance

SGP07N120XK Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Infineon Technologies

Infineon Technologies AG is a leading global semiconductor manufacturer and provider of comprehensive solutions for automotive, industrial, and consumer applications. Founded in 1999, the company has grown to become one of the largest semiconductor manufacturers in Europe. Infineon is headquartered in Neubiberg, Germany with operations across countries in Europe and Asia Pacific. Infineon provides microelectronics products that address many of today's societal challenges affecting energy efficiency, mobility, security and connectivity. Over the past two decades Infineon has become a major player in the semiconductor industry with an impressive portfolio of innovative technologies. As one of only four companies that produce DRAM chips for automobiles, Infineon produces cutting-edge processors for use in advanced driver assistance systems (ADAS). Likewise, they specialize in providing advanced embedded secure microcontrollers that are essential for connected devices. Furthermore, they offer integrated circuit solutions for industrial power control such as motor controllers and embedded gate drivers.

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Management team

CEO

Jochen Hanebeck

Chief Financial Officer

Sven Schneider

Chief Marketing Officer

Andreas Urschitz

Manufacturer fab locations 19

Fab name Location Fab Initiation Wafer Capacity

Villach 300mm

Fabrication

Fab Initiation

2011

Austria

Villach

Wafer Capacity

11,000

2011

11,000

Kulim 2

Fabrication

Fab Initiation

2016

Malaysia

Kulim

Wafer Capacity

79,500

2016

79,500

Dresden - Module 3

Fabrication

Fab Initiation

1999

Germany

Dresden

Wafer Capacity

58,000

1999

58,000

Villach Building

Fabrication

Fab Initiation

2016

Austria

Villach

Wafer Capacity

2,000

2016

2,000

Regensburg

Fabrication

Fab Initiation

1986

Germany

Regensburg

Wafer Capacity

60,000

1986

60,000

Dresden 200 - Module 1

Fabrication

Fab Initiation

1995

Germany

Dresden

Wafer Capacity

28,000

1995

28,000

Dresden 200 - Module 2

Fabrication

Fab Initiation

1996

Germany

Dresden

Wafer Capacity

28,000

1996

28,000

Building 38

Fabrication

Fab Initiation

2005

Germany

Dresden

Wafer Capacity

500

2005

500

Building 47

Fabrication

Fab Initiation

2005

Germany

Dresden

Wafer Capacity

500

2005

500

Kulim 1

Fabrication

Fab Initiation

2006

Malaysia

Kulim

Wafer Capacity

110,000

2006

110,000

Mesa Facility

Fabrication

Fab Initiation

1990

USA

Mesa

Wafer Capacity

3,000

1990

3,000

Villach 150mm

Fabrication

Fab Initiation

1981

Austria

Villach

Wafer Capacity

35,000

1981

35,000

Villach 200mm

Fabrication

Fab Initiation

1995

Austria

Villach

Wafer Capacity

68,000

1995

68,000

Temecula

Fabrication

Fab Initiation

1995

USA

Temecula

Wafer Capacity

30,000

1995

30,000

Villach 300mm

Fabrication

Fab Initiation

2021

Austria

Villach

Wafer Capacity

2021

Villach 150mm

Fabrication

Fab Initiation

2018

Austria

Villach

Wafer Capacity

5,000

2018

5,000

Kulim 3

Fabrication

Fab Initiation

2024

Malaysia

Kulim

Wafer Capacity

2024

Fab 25

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

31,000

1995

31,000

Dresden - Module 4

Fabrication

Fab Initiation

2026

Germany

Dresden

Wafer Capacity

2026

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