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IRG4PC40UD-E

Infineon Technologies

IRG4PC40UD-E by Infineon Technologies

IRG4PC40UD-E by Infineon is an N-CHANNEL IGBT with 600V max collector-emitter voltage and 40A max collector current. It has a single configuration with built-in diode, ideal for power control applications. Featuring a turn-off time of 330ns and turn-on time of 92ns, this transistor is designed for flange mount installation.

Median Price

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Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

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Vyrian

USA . 575 parts In-Stock

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575

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Nova Conductors

Japan . 550 parts In-Stock

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550

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Technoshack Inc.

Canada . 211 parts In-Stock

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Digiode

USA . 65 parts In-Stock

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Modulus Dynamics

Lithuania . 12,740 parts In-Stock

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$0.855

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$0.821

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$0.787

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AZTECH Wire

Italy . 775 parts In-Stock

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$13.578

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Ampacity Inc.

Singapore . 423 parts In-Stock

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$29.050

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Continental Prestige Electronics

USA . 3,354 parts In-Stock

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Argo Parts USA

USA . 2,100 parts In-Stock

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Corphita

USA . 789 parts In-Stock

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Perfect Parts

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Bastille Electronics

Australia . 81 parts In-Stock

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Overview

Unlock the power of advanced technology with the IRG4PC40UD-E from Infineon Technologies. As a leader in the industry, Infineon delivers top-quality insulated gate bipolar transistors (IGBT) that are designed for optimal performance and reliability. Ideal for power control applications, this N-channel transistor boasts a single configuration with a built-in diode, ensuring seamless operation. With a maximum collector-emitter voltage of 600V and a collector current of 40A, this transistor offers unmatched value and benefits to customers seeking superior performance and efficiency in their electronic systems. Trust Infineon for cutting-edge solutions that drive innovation and success.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides good insulation and protection for the internal components, ensuring durability and reliability.

Polarity or Channel Type: N-CHANNEL

Offers efficient power control and switching capabilities for various applications.

Configuration: SINGLE WITH BUILT-IN DIODE

Simplifies circuit design and improves performance by integrating a diode.

Transistor Application: POWER CONTROL

Suitable for controlling power in various electronics and industrial applications.

Package Shape: RECTANGULAR

Facilitates easy mounting and integration into systems.

Terminal Form: THROUGH-HOLE

Allows for secure and reliable connections on through-hole circuit boards.

Nominal Turn Off Time (toff): 330 ns

Fast turn-off time enhances efficiency and reduces power loss.

No. of Terminals: 3

Provides necessary connections for proper functioning in circuits.

Package Style (Meter): FLANGE MOUNT

Enables easy installation and mounting in various systems.

Maximum Collector-Emitter Voltage: 600 V

Handles high voltage applications with ease, providing reliable performance.

Transistor Element Material: SILICON

Known for its high efficiency and reliability in electronic components.

Maximum Collector Current (IC): 40 A

Capable of handling high currents, making it suitable for power control applications.

Terminal Finish: MATTE TIN OVER NICKEL

Provides good conductivity and corrosion resistance for long-term performance.

Terminal Position: SINGLE

Simplifies connections and installation in circuits.

Case Connection: COLLECTOR

Clear indication of connection point for easy integration into circuits.

Nominal Turn On Time (ton): 92 ns

Fast turn-on time ensures quick response and efficient power control.

Technical Specifications

Insulated Gate Bipolar Transistors (IGBT) IRG4PC40UD-E attributes and parameters. Explore more Insulated Gate Bipolar Transistors (IGBT) devices from Infineon Technologies

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

600 V

JEDEC-95 Code:

TO-247AD

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e3

No. of Elements:

1

No. of Terminals:

3

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

Qualification:

Not Qualified

Surface Mount:

NO

Terminal Finish:

MATTE TIN OVER NICKEL

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

POWER CONTROL

Transistor Element Material:

SILICON

Nominal Turn Off Time (toff):

330 ns

Nominal Turn On Time (ton):

92 ns

Trade Compliance

IRG4PC40UD-E Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Infineon Technologies

Infineon Technologies AG is a leading global semiconductor manufacturer and provider of comprehensive solutions for automotive, industrial, and consumer applications. Founded in 1999, the company has grown to become one of the largest semiconductor manufacturers in Europe. Infineon is headquartered in Neubiberg, Germany with operations across countries in Europe and Asia Pacific. Infineon provides microelectronics products that address many of today's societal challenges affecting energy efficiency, mobility, security and connectivity. Over the past two decades Infineon has become a major player in the semiconductor industry with an impressive portfolio of innovative technologies. As one of only four companies that produce DRAM chips for automobiles, Infineon produces cutting-edge processors for use in advanced driver assistance systems (ADAS). Likewise, they specialize in providing advanced embedded secure microcontrollers that are essential for connected devices. Furthermore, they offer integrated circuit solutions for industrial power control such as motor controllers and embedded gate drivers.

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Management team

CEO

Jochen Hanebeck

Chief Financial Officer

Sven Schneider

Chief Marketing Officer

Andreas Urschitz

Manufacturer fab locations 19

Fab name Location Fab Initiation Wafer Capacity

Villach 300mm

Fabrication

Fab Initiation

2011

Austria

Villach

Wafer Capacity

11,000

2011

11,000

Kulim 2

Fabrication

Fab Initiation

2016

Malaysia

Kulim

Wafer Capacity

79,500

2016

79,500

Dresden - Module 3

Fabrication

Fab Initiation

1999

Germany

Dresden

Wafer Capacity

58,000

1999

58,000

Villach Building

Fabrication

Fab Initiation

2016

Austria

Villach

Wafer Capacity

2,000

2016

2,000

Regensburg

Fabrication

Fab Initiation

1986

Germany

Regensburg

Wafer Capacity

60,000

1986

60,000

Dresden 200 - Module 1

Fabrication

Fab Initiation

1995

Germany

Dresden

Wafer Capacity

28,000

1995

28,000

Dresden 200 - Module 2

Fabrication

Fab Initiation

1996

Germany

Dresden

Wafer Capacity

28,000

1996

28,000

Building 38

Fabrication

Fab Initiation

2005

Germany

Dresden

Wafer Capacity

500

2005

500

Building 47

Fabrication

Fab Initiation

2005

Germany

Dresden

Wafer Capacity

500

2005

500

Kulim 1

Fabrication

Fab Initiation

2006

Malaysia

Kulim

Wafer Capacity

110,000

2006

110,000

Mesa Facility

Fabrication

Fab Initiation

1990

USA

Mesa

Wafer Capacity

3,000

1990

3,000

Villach 150mm

Fabrication

Fab Initiation

1981

Austria

Villach

Wafer Capacity

35,000

1981

35,000

Villach 200mm

Fabrication

Fab Initiation

1995

Austria

Villach

Wafer Capacity

68,000

1995

68,000

Temecula

Fabrication

Fab Initiation

1995

USA

Temecula

Wafer Capacity

30,000

1995

30,000

Villach 300mm

Fabrication

Fab Initiation

2021

Austria

Villach

Wafer Capacity

2021

Villach 150mm

Fabrication

Fab Initiation

2018

Austria

Villach

Wafer Capacity

5,000

2018

5,000

Kulim 3

Fabrication

Fab Initiation

2024

Malaysia

Kulim

Wafer Capacity

2024

Fab 25

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

31,000

1995

31,000

Dresden - Module 4

Fabrication

Fab Initiation

2026

Germany

Dresden

Wafer Capacity

2026

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