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STGP15H60DF

STMicroelectronics

STGP15H60DF by STMicroelectronics

STGP15H60DF by STMicroelectronics is an N-CHANNEL IGBT with 600V VCE, 30A IC, and 115W power dissipation. Ideal for POWER CONTROL applications, it features a built-in diode, 225ns turn-off time, and -55 to 175°C operating temperature range.

Median Price

$2.182

Lifecycle Status

Suppliers In-Stock

14

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Chip1Stop

Japan . 1,000 parts In-Stock

1+ parts

$0.710

100+ parts

-

1k+ parts

-

10k+ parts

-

1,000

$0.710

-

-

-

Arrow

USA . 1,000 parts In-Stock

1+ parts

$1.997

100+ parts

$1.056

1k+ parts

$0.791

10k+ parts

-

1,000

$1.997

$1.056

$0.791

-

Element14

Singapore . 501 parts In-Stock

1+ parts

$2.182

100+ parts

$1.430

1k+ parts

$0.980

10k+ parts

$0.966

501

$2.182

$1.430

$0.980

$0.966

Farnell

UK . 501 parts In-Stock

1+ parts

$2.378

100+ parts

$1.366

1k+ parts

$1.022

10k+ parts

-

501

$2.378

$1.366

$1.022

-

Mouser Electronics

USA . 434 parts In-Stock

1+ parts

$2.610

100+ parts

$1.220

1k+ parts

$0.784

10k+ parts

$0.782

434

$2.610

$1.220

$0.784

$0.782

Newark

USA . 340 parts In-Stock

1+ parts

$2.790

100+ parts

$1.440

1k+ parts

$1.170

10k+ parts

$1.110

340

$2.790

$1.440

$1.170

$1.110

Verical

USA . 342 parts In-Stock

1+ parts

-

100+ parts

$1.072

1k+ parts

$0.737

10k+ parts

$0.730

342

-

$1.072

$0.737

$0.730

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 84 parts In-Stock

1+ parts

$0.674

100+ parts

-

1k+ parts

-

10k+ parts

-

84

$0.674

-

-

-

Nova Conductors

Japan . 450 parts In-Stock

1+ parts

$1.050

100+ parts

-

1k+ parts

-

10k+ parts

-

450

$1.050

-

-

-

Chip Stock

USA . 17,900 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

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10k+ parts

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17,900

-

-

-

-

Anansix

USA . 1,328 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

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1,328

-

-

-

-

Vyrian

USA . 400 parts In-Stock

1+ parts

-

100+ parts

-

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400

-

-

-

-

PC Components Company LLC

USA . 100 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

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10k+ parts

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100

-

-

-

-

Bristol Electronics

USA . 100 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

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100

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Ampacity Inc.

Singapore . 663 parts In-Stock

1+ parts

$0.600

100+ parts

-

1k+ parts

-

10k+ parts

-

663

$0.600

-

-

-

Corphita

USA . 4,563 parts In-Stock

1+ parts

$0.639

100+ parts

-

1k+ parts

-

10k+ parts

-

4,563

$0.639

-

-

-

IDEA Electronic Components Group

UK . 1,089 parts In-Stock

1+ parts

$0.661

100+ parts

-

1k+ parts

$0.595

10k+ parts

-

1,089

$0.661

-

$0.595

-

Argo Parts USA

USA . 4,043 parts In-Stock

1+ parts

$1.032

100+ parts

-

1k+ parts

-

10k+ parts

-

4,043

$1.032

-

-

-

Netroflash

USA . 1,000 parts In-Stock

1+ parts

$1.050

100+ parts

-

1k+ parts

-

10k+ parts

-

1,000

$1.050

-

-

-

MKK Technologies

India . 1,004 parts In-Stock

1+ parts

$1.242

100+ parts

-

1k+ parts

-

10k+ parts

-

1,004

$1.242

-

-

-

DigiPath Technology Company

USA . 1,004 parts In-Stock

1+ parts

$1.242

100+ parts

-

1k+ parts

-

10k+ parts

-

1,004

$1.242

-

-

-

Corohmni

South Africa . 46 parts In-Stock

1+ parts

$1.377

100+ parts

-

1k+ parts

-

10k+ parts

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46

$1.377

-

-

-

Aztec Data Supply Inc.

USA . 2,909 parts In-Stock

1+ parts

$1.710

100+ parts

-

1k+ parts

-

10k+ parts

-

2,909

$1.710

-

-

-

Continental Prestige Electronics

USA . 957 parts In-Stock

1+ parts

$2.000

100+ parts

$1.270

1k+ parts

$0.866

10k+ parts

-

957

$2.000

$1.270

$0.866

-

Microchip USA

USA . 3,817 parts In-Stock

1+ parts

$14.105

100+ parts

-

1k+ parts

-

10k+ parts

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3,817

$14.105

-

-

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Lixinc

USA . 12,420 parts In-Stock

1+ parts

-

100+ parts

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12,420

-

-

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Futuretech Components

Singapore . 10,000 parts In-Stock

1+ parts

-

100+ parts

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10,000

-

-

-

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Infinite Electronics LLP (Excess)

. 8,001 parts In-Stock

1+ parts

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100+ parts

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8,001

-

-

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Epart123

USA . 8,000 parts In-Stock

1+ parts

-

100+ parts

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8,000

-

-

-

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A-Z Elektronik GmbH

Germany . 6,054 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

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6,054

-

-

-

-

Parana Technologies

USA . 1,130 parts In-Stock

1+ parts

-

100+ parts

$0.790

1k+ parts

-

10k+ parts

-

1,130

-

$0.790

-

-

Overview

Unleash the power of your electronics with the STGP15H60DF by STMicroelectronics. As a leading manufacturer in the industry, STMicroelectronics delivers top-quality Insulated Gate Bipolar Transistors (IGBT) like no other. This single N-CHANNEL transistor with a built-in diode is perfect for power control applications, offering a maximum collector-emitter voltage of 600V and a maximum collector current of 30A. With a nominal turn-off time of 225ns, this transistor provides superior performance in a variety of electronic devices. Upgrade your electronics with the STGP15H60DF and experience unmatched reliability and efficiency.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides good insulation and protection for the internal components, ensuring reliability and durability.

Polarity or Channel Type: N-CHANNEL

N-channel IGBTs typically have higher mobility and lower resistance compared to P-channel, making them more efficient in power control applications.

Configuration: SINGLE WITH BUILT-IN DIODE

Built-in diode simplifies circuit design and protects against reverse voltage spikes, enhancing overall system reliability.

Transistor Application: POWER CONTROL

Specifically designed for power control applications, providing efficient switching capabilities and high power dissipation.

Maximum VCEsat: 2 V

Low saturation voltage results in minimal power loss and high efficiency during operation.

Package Shape: RECTANGULAR

Rectangular shape for easy mounting and compatibility with standard electronic components and PCB layouts.

Terminal Form: THROUGH-HOLE

Through-hole terminals provide secure and reliable connections for stable performance in various applications.

Nominal Turn Off Time (toff): 225 ns

Fast turn-off time allows for quick and precise control of power output, improving overall system response.

No. of Terminals: 3

Simple 3-terminal configuration for easy integration into existing circuits and systems.

Maximum Power Dissipation (Abs): 115 W

High power dissipation capability ensures the IGBT can handle significant power loads without overheating.

Package Style (Meter): FLANGE MOUNT

Flange mount design for easy installation and heat dissipation, ideal for high-power applications.

Maximum Operating Temperature: 175 °C

Wide operating temperature range allows for reliable performance in various environmental conditions.

Maximum Collector-Emitter Voltage: 600 V

High breakdown voltage rating for safe operation in high voltage applications.

Transistor Element Material: SILICON

Silicon material provides high reliability and temperature stability for long-term performance.

Maximum Gate-Emitter Voltage: 20 V

Safely operates within specified voltage limits, preventing damage to the transistor.

Minimum Operating Temperature: -55 °C

Can operate in extremely low-temperature conditions, making it suitable for a wide range of applications.

Maximum Collector Current (IC): 30 A

High collector current rating allows for handling of large current loads, making it suitable for high-power applications.

Maximum Gate-Emitter Threshold Voltage: 7 V

Offers good gate control with a reasonable gate-emitter threshold voltage for efficient power switching.

Terminal Position: SINGLE

Single terminal position for easy and straightforward connection in circuit designs.

Case Connection: COLLECTOR

Collector case connection for efficient heat dissipation and easy mounting in power control systems.

Nominal Turn On Time (ton): 34 ns

Fast turn-on time allows for quick response in switching operations, reducing power loss and improving efficiency.

Technical Specifications

Insulated Gate Bipolar Transistors (IGBT) STGP15H60DF attributes and parameters. Explore more Insulated Gate Bipolar Transistors (IGBT) devices from STMicroelectronics

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

600 V

Maximum Gate-Emitter Threshold Voltage:

7 V

Maximum Gate-Emitter Voltage:

20 V

JEDEC-95 Code:

TO-220AB

JESD-30 Code:

R-PSFM-T3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

175 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Peak Reflow Temperature (C):

NOT SPECIFIED

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Surface Mount:

NO

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Transistor Application:

POWER CONTROL

Transistor Element Material:

SILICON

Nominal Turn Off Time (toff):

225 ns

Nominal Turn On Time (ton):

34 ns

Maximum VCEsat:

2 V

Trade Compliance

STGP15H60DF Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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