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STGP10NC60HD

STMicroelectronics

STGP10NC60HD by STMicroelectronics

STGP10NC60HD by STMicroelectronics is an N-CHANNEL IGBT with 600V max collector-emitter voltage, 9A max collector current, and 60W max power dissipation. Ideal for motor control applications due to its single configuration with built-in diode and fast turn-off time of 247ns.

Median Price

$1.600

Lifecycle Status

Suppliers In-Stock

10

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Newark

USA . 647 parts In-Stock

1+ parts

$1.600

100+ parts

-

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647

$1.600

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-

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Mouser Electronics

USA . 3,818 parts In-Stock

1+ parts

$2.310

100+ parts

$1.020

1k+ parts

$0.742

10k+ parts

$0.734

3,818

$2.310

$1.020

$0.742

$0.734

EBV Elektronik

Germany . 650 parts In-Stock

1+ parts

-

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-

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650

-

-

-

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Avnet

USA . 647 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$0.691

10k+ parts

$0.622

647

-

-

$0.691

$0.622

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 206 parts In-Stock

1+ parts

$0.669

100+ parts

-

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206

$0.669

-

-

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Nova Conductors

Japan . 10 parts In-Stock

1+ parts

$0.889

100+ parts

-

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-

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10

$0.889

-

-

-

TME

Poland . 284 parts In-Stock

1+ parts

$2.210

100+ parts

$1.270

1k+ parts

-

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-

284

$2.210

$1.270

-

-

Chip Stock

USA . 8,500 parts In-Stock

1+ parts

-

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8,500

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Vyrian

USA . 1,371 parts In-Stock

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1,371

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Anansix

USA . 1,102 parts In-Stock

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1,102

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Corohmni

South Africa . 81 parts In-Stock

1+ parts

$0.573

100+ parts

-

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-

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81

$0.573

-

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Ampacity Inc.

Singapore . 2,991 parts In-Stock

1+ parts

$0.600

100+ parts

-

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-

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2,991

$0.600

-

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Corphita

USA . 3,471 parts In-Stock

1+ parts

$0.634

100+ parts

-

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10k+ parts

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3,471

$0.634

-

-

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IDEA Electronic Components Group

UK . 1,914 parts In-Stock

1+ parts

$0.651

100+ parts

-

1k+ parts

$0.586

10k+ parts

-

1,914

$0.651

-

$0.586

-

Continental Prestige Electronics

USA . 4,638 parts In-Stock

1+ parts

$0.889

100+ parts

-

1k+ parts

-

10k+ parts

$0.871

4,638

$0.889

-

-

$0.871

Argo Parts USA

USA . 157 parts In-Stock

1+ parts

$0.889

100+ parts

-

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157

$0.889

-

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MKK Technologies

India . 1,309 parts In-Stock

1+ parts

$1.225

100+ parts

-

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1,309

$1.225

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DigiPath Technology Company

USA . 1,309 parts In-Stock

1+ parts

$1.225

100+ parts

-

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-

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1,309

$1.225

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-

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Aztec Data Supply Inc.

USA . 56 parts In-Stock

1+ parts

$1.330

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-

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56

$1.330

-

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Semicontronic

India . 3,798 parts In-Stock

1+ parts

$1.400

100+ parts

$1.365

1k+ parts

$1.358

10k+ parts

-

3,798

$1.400

$1.365

$1.358

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Microchip USA

USA . 2,574 parts In-Stock

1+ parts

$11.310

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2,574

$11.310

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Futuretech Components

Singapore . 26,000 parts In-Stock

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26,000

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Lixinc

USA . 18,265 parts In-Stock

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18,265

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Perfect Parts

USA . 14,301 parts In-Stock

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14,301

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A-Z Elektronik GmbH

Germany . 7,277 parts In-Stock

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7,277

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Kepictronics

USA . 5,000 parts In-Stock

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Eastek

USA . 5,000 parts In-Stock

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5,000

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Netroflash

USA . 1,000 parts In-Stock

1+ parts

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100+ parts

$0.871

1k+ parts

$0.845

10k+ parts

$0.827

1,000

-

$0.871

$0.845

$0.827

Parana Technologies

USA . 903 parts In-Stock

1+ parts

-

100+ parts

$0.779

1k+ parts

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903

-

$0.779

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GreenTree Electronics

Israel . 700 parts In-Stock

1+ parts

-

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700

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Overview

Enhance your motor control systems with the STGP10NC60HD insulated gate bipolar transistor by STMicroelectronics. Designed with high-quality materials and advanced technology, this N-channel transistor offers reliable performance and efficiency. With a maximum collector-emitter voltage of 600V and a nominal turn-off time of 247ns, this transistor is perfect for a wide range of applications in the industrial sector. Trust STMicroelectronics to deliver top-notch products that provide value, benefits, and advantages to customers looking to optimize their systems.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides good insulation and protection for the internal components, ensuring durability and reliability.

Polarity or Channel Type: N-CHANNEL

Allows for efficient control and modulation of current flow in motor control applications.

Configuration: SINGLE WITH BUILT-IN DIODE

Simplifies circuit design by integrating a diode, saving space and enhancing overall functionality.

Transistor Application: MOTOR CONTROL

Specifically designed for motor control applications, ensuring optimal performance in this specific usage.

Package Shape: RECTANGULAR

Facilitates easy mounting and installation in various systems and devices.

Terminal Form: THROUGH-HOLE

Enables secure and stable soldering connections for reliable operation.

Nominal Turn Off Time (toff): 247 ns

Provides fast switching capabilities, improving efficiency and reducing power loss.

Maximum Power Dissipation (Abs): 60 W

Can handle high power levels, making it suitable for demanding motor control applications.

Maximum Operating Temperature: 150 °C

Capable of operating at high temperatures without performance degradation, ensuring reliability in various environments.

Maximum Collector-Emitter Voltage: 600 V

Allows for handling high voltage levels, making it versatile for different applications.

Transistor Element Material: SILICON

Provides good electrical properties and reliability for consistent performance over time.

Maximum Gate-Emitter Voltage: 20 V

Supports efficient gate control and modulation, enhancing overall performance.

Maximum Collector Current (IC): 9 A

Capable of handling high current levels, suitable for motor control applications.

Maximum Gate-Emitter Threshold Voltage: 5.75 V

Defines the turn-on threshold for efficient operation in motor control circuits.

Terminal Finish: TIN

Provides reliable electrical connections and corrosion resistance for long-term usage.

Terminal Position: SINGLE

Simplifies the installation process and ensures proper alignment in circuit layouts.

Nominal Turn On Time (ton): 19 ns

Fast turn-on time allows for quick response and control in motor control applications.

Technical Specifications

Insulated Gate Bipolar Transistors (IGBT) STGP10NC60HD attributes and parameters. Explore more Insulated Gate Bipolar Transistors (IGBT) devices from STMicroelectronics

Specs

Maximum Collector Current (IC):

9 A

Maximum Collector-Emitter Voltage:

600 V

Maximum Gate-Emitter Threshold Voltage:

5.75 V

Maximum Gate-Emitter Voltage:

20 V

JEDEC-95 Code:

TO-220AB

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Insulated Gate BIP Transistors

Surface Mount:

NO

Terminal Finish:

TIN

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

MOTOR CONTROL

Transistor Element Material:

SILICON

Nominal Turn Off Time (toff):

247 ns

Nominal Turn On Time (ton):

19 ns

Trade Compliance

STGP10NC60HD Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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