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STGP30H60DFB

STMicroelectronics

STGP30H60DFB by STMicroelectronics

STMicroelectronics' STGP30H60DFB is an N-CHANNEL IGBT with 600V VCE, 60A IC, and 223ns toff. Ideal for power control applications, it features a single configuration with built-in diode in a rectangular package suitable for flange mount installations.

Median Price

$2.870

Lifecycle Status

Suppliers In-Stock

16

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Arrow

USA . 965 parts In-Stock

1+ parts

$2.314

100+ parts

$1.290

1k+ parts

-

10k+ parts

-

965

$2.314

$1.290

-

-

Chip1Stop

Japan . 995 parts In-Stock

1+ parts

$2.690

100+ parts

$1.120

1k+ parts

$1.110

10k+ parts

-

995

$2.690

$1.120

$1.110

-

Mouser Electronics

USA . 2,695 parts In-Stock

1+ parts

$2.870

100+ parts

$1.280

1k+ parts

$0.997

10k+ parts

-

2,695

$2.870

$1.280

$0.997

-

Element14

Singapore . 112 parts In-Stock

1+ parts

$3.125

100+ parts

$2.098

1k+ parts

$1.607

10k+ parts

-

112

$3.125

$2.098

$1.607

-

Newark

USA . 1,017 parts In-Stock

1+ parts

$3.370

100+ parts

$1.780

1k+ parts

$1.600

10k+ parts

$1.520

1,017

$3.370

$1.780

$1.600

$1.520

Farnell

UK . 112 parts In-Stock

1+ parts

$3.437

100+ parts

$2.036

1k+ parts

$1.582

10k+ parts

-

112

$3.437

$2.036

$1.582

-

EBV Elektronik

Germany . 1,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

1,000

-

-

-

-

Verical

USA . 995 parts In-Stock

1+ parts

-

100+ parts

$1.270

1k+ parts

-

10k+ parts

-

995

-

$1.270

-

-

Avnet

USA . 400 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

400

-

-

-

-

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Nova Conductors

Japan . 50 parts In-Stock

1+ parts

$1.790

100+ parts

-

1k+ parts

-

10k+ parts

-

50

$1.790

-

-

-

Digiode

USA . 3,000 parts In-Stock

1+ parts

$2.166

100+ parts

-

1k+ parts

-

10k+ parts

-

3,000

$2.166

-

-

-

TME

Poland . 86 parts In-Stock

1+ parts

$2.640

100+ parts

$1.900

1k+ parts

-

10k+ parts

-

86

$2.640

$1.900

-

-

Anansix

USA . 1,317 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

1,317

-

-

-

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ComSIT Distribution GmbH

Germany . 1,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

1,000

-

-

-

-

Classic Components Corporation

USA . 887 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

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887

-

-

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Vyrian

USA . 643 parts In-Stock

1+ parts

-

100+ parts

-

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-

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643

-

-

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Advanced Electronics

New Zealand . 450 parts In-Stock

1+ parts

$1.168

100+ parts

$1.063

1k+ parts

$0.958

10k+ parts

-

450

$1.168

$1.063

$0.958

-

IDEA Electronic Components Group

UK . 1,519 parts In-Stock

1+ parts

$1.231

100+ parts

-

1k+ parts

$1.108

10k+ parts

-

1,519

$1.231

-

$1.108

-

Ampacity Inc.

Singapore . 382 parts In-Stock

1+ parts

$1.590

100+ parts

-

1k+ parts

-

10k+ parts

-

382

$1.590

-

-

-

Semicontronic

India . 107 parts In-Stock

1+ parts

$1.590

100+ parts

$1.550

1k+ parts

$1.542

10k+ parts

-

107

$1.590

$1.550

$1.542

-

Aranea Global

USA . 100 parts In-Stock

1+ parts

$1.754

100+ parts

-

1k+ parts

$1.684

10k+ parts

-

100

$1.754

-

$1.684

-

Argo Parts USA

USA . 3,628 parts In-Stock

1+ parts

$1.790

100+ parts

-

1k+ parts

-

10k+ parts

-

3,628

$1.790

-

-

-

Corphita

USA . 3,119 parts In-Stock

1+ parts

$2.052

100+ parts

-

1k+ parts

-

10k+ parts

-

3,119

$2.052

-

-

-

MKK Technologies

India . 678 parts In-Stock

1+ parts

$2.315

100+ parts

-

1k+ parts

-

10k+ parts

-

678

$2.315

-

-

-

DigiPath Technology Company

USA . 678 parts In-Stock

1+ parts

$2.315

100+ parts

-

1k+ parts

-

10k+ parts

-

678

$2.315

-

-

-

Continental Prestige Electronics

USA . 474 parts In-Stock

1+ parts

$2.800

100+ parts

$1.840

1k+ parts

$1.290

10k+ parts

-

474

$2.800

$1.840

$1.290

-

Microchip USA

USA . 2,335 parts In-Stock

1+ parts

$20.995

100+ parts

-

1k+ parts

-

10k+ parts

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2,335

$20.995

-

-

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Lixinc

USA . 16,807 parts In-Stock

1+ parts

-

100+ parts

-

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16,807

-

-

-

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Authorized Procurement Solutions

USA . 5,000 parts In-Stock

1+ parts

-

100+ parts

-

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-

10k+ parts

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5,000

-

-

-

-

RC Electronics

USA . 2,600 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

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2,600

-

-

-

-

Parana Technologies

USA . 1,752 parts In-Stock

1+ parts

-

100+ parts

$1.472

1k+ parts

-

10k+ parts

-

1,752

-

$1.472

-

-

Glotronic Ltd.

UK . 596 parts In-Stock

1+ parts

-

100+ parts

-

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596

-

-

-

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Perfect Parts

USA . 56 parts In-Stock

1+ parts

-

100+ parts

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56

-

-

-

-

Overview

Experience superior power control with the STGP30H60DFB Insulated Gate Bipolar Transistor from STMicroelectronics. This N-CHANNEL transistor offers high-quality performance and reliability for a wide range of applications, making it an essential component for your projects. With a maximum collector-emitter voltage of 600 V and a maximum collector current of 60 A, this transistor is designed to handle even the most demanding tasks with ease. Trust in STMicroelectronics to deliver cutting-edge technology that provides value, efficiency, and unmatched benefits to customers worldwide.

Feature Benefit Bullets

Package Body Material:

PLASTIC/EPOXY - Provides durability and thermal conductivity, making it suitable for various environments.

Polarity or Channel Type:

N-CHANNEL - Offers efficient power control and enhanced performance.

Configuration:

SINGLE WITH BUILT-IN DIODE - Simplifies circuit design and reduces component count, saving space and cost.

Transistor Application:

POWER CONTROL - Ideal for high power applications requiring precision control and reliability.

Package Shape:

RECTANGULAR - Facilitates easy mounting and integration into electronic systems.

Terminal Form:

THROUGH-HOLE - Ensures secure connections and stability in circuitry.

Nominal Turn Off Time (toff):

223 ns - Enables fast switching speeds and efficient power management.

No. of Terminals:

3 - Provides necessary connections for proper functionality and operation.

Package Style (Meter):

FLANGE MOUNT - Allows for easy installation and secure mounting in industrial settings.

Maximum Collector-Emitter Voltage:

600 V - Supports high voltage applications and ensures robust performance.

Transistor Element Material:

SILICON - Offers high conductivity and reliability in power control applications.

Maximum Collector Current (IC):

60 A - Handles large currents with minimal power loss and heat dissipation.

Terminal Finish:

MATTE TIN - Enhances conductivity and solderability for reliable connections.

Terminal Position:

SINGLE - Simplifies installation and connection in circuit layouts for ease of use.

Case Connection:

COLLECTOR - Provides a clear connection point for efficient power distribution and control.

Nominal Turn On Time (ton):

51.1 ns - Delivers quick response times and precise power modulation for optimal performance.

Technical Specifications

Insulated Gate Bipolar Transistors (IGBT) STGP30H60DFB attributes and parameters. Explore more Insulated Gate Bipolar Transistors (IGBT) devices from STMicroelectronics

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

600 V

JEDEC-95 Code:

TO-220AB

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e3

No. of Elements:

1

No. of Terminals:

3

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

Surface Mount:

NO

Terminal Finish:

MATTE TIN

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

POWER CONTROL

Transistor Element Material:

SILICON

Nominal Turn Off Time (toff):

223 ns

Nominal Turn On Time (ton):

51.1 ns

Trade Compliance

STGP30H60DFB Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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