Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
Discover essential electronic components for your devices, including CPU accelerators, system cache controllers, computer processors, motherboards, and graphics computing systems. Enhance device performance and connectivity with reliable components engineered for seamless integration and optimal functionality.
Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
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STGP15M120F3 by STMicroelectronics is an N-CHANNEL IGBT with a max VCEsat of 2.3V and a max collector-emitter voltage of 1200V. It is used for power control applications, offering a nominal turn off time of 406ns and a max collector current of 30A.
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$0.972
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This material provides excellent protection and insulation for the IGBT, making it durable and suitable for various applications.
The N-channel design allows for better conductivity and efficiency, making this IGBT a reliable choice for power control applications.
The single configuration simplifies circuit design and reduces complexity, making it easier to integrate this IGBT into a power control system.
Designed specifically for power control, this IGBT delivers efficient and reliable performance in controlling high power levels.
With a low VCEsat value, this IGBT minimizes power losses and improves overall power efficiency, making it an ideal choice for high-power applications.
The rectangular shape allows for easy mounting and integration into various electronic systems, providing flexibility and convenience in installation.
The through-hole terminals ensure secure and reliable connections, enhancing the durability of this IGBT in demanding operating conditions.
This IGBT consists of a single element, simplifying the circuit design and reducing the chances of failure, ensuring better overall performance.
The quick turn-off time of 406 ns allows for fast and precise control of the power flow, making this IGBT suitable for applications requiring rapid switching.
With three terminals, this IGBT provides easy connectivity and compatibility with various circuit configurations, enhancing its versatility.
The flange mount package style provides sturdy mechanical support and efficient heat dissipation, ensuring the reliability and durability of this IGBT.
With a high maximum operating temperature, this IGBT can withstand demanding environments and maintain stable performance, making it suitable for industrial applications.
The high maximum collector-emitter voltage allows this IGBT to handle high voltage levels, making it ideal for power control applications in electrical systems.
Utilizing silicon as the transistor element material ensures high reliability, low leakage current, and excellent performance under various operating conditions.
The high maximum gate-emitter voltage allows for precise control and reliable operation of this IGBT in power control circuits.
With a low minimum operating temperature, this IGBT can withstand extreme cold environments while maintaining its performance, making it suitable for a wide range of applications.
With a high maximum collector current, this IGBT can handle substantial power loads, providing reliable and efficient operation in power control systems.
The maximum gate-emitter threshold voltage ensures precise control of the IGBT, allowing for accurate power regulation and minimizing power loss.
The single terminal position simplifies the wiring and installation process, making it easier to integrate this IGBT into electronic systems.
The case connection to the collector enhances heat dissipation and improves overall thermal management, ensuring the IGBT's reliability and longevity.
The fast turn-on time of 39 ns allows rapid power control and precise switching, making this IGBT suitable for applications requiring high-speed operation.
Insulated Gate Bipolar Transistors (IGBT) STGP15M120F3 attributes and parameters. Explore more Insulated Gate Bipolar Transistors (IGBT) devices from STMicroelectronics
Case Connection:
Maximum Collector Current (IC):
Maximum Collector-Emitter Voltage:
Configuration:
Maximum Gate-Emitter Threshold Voltage:
Maximum Gate-Emitter Voltage:
JEDEC-95 Code:
JESD-30 Code:
No. of Elements:
No. of Terminals:
Maximum Operating Temperature:
Minimum Operating Temperature:
Package Body Material:
Package Shape:
Package Style (Meter):
Peak Reflow Temperature (C):
Polarity or Channel Type:
Surface Mount:
Terminal Form:
Terminal Position:
Maximum Time At Peak Reflow Temperature (s):
Transistor Application:
Transistor Element Material:
Nominal Turn Off Time (toff):
Nominal Turn On Time (ton):
Maximum VCEsat:
STGP15M120F3 Transistors trade compliance attributes, and parameters.
ECCN
EAR99
ECCN Governance
EAR
PCN Obsolescence/ EOL - OBS NOTICE 14/Feb/2023
PCN Assembly/Origin - Capacity Expansion 30/Mar/2021
STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.
President, CEO
Jean-Marc Chery
President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience
Lorenzo Grandi
President, Sales & Marketing
Jerome Roux
Castelletto
Fabrication
Fab Initiation
1968
Italy
Wafer Capacity
SGFAB AMK 6
2000
Singapore
29,000
AG200
Agrate Brianza
14,000
RST 8
France
Rousset
35,000
Crolles 1
1993
Crolles
30,000
Crolles 2-ext. mod 5
Crolles 2-ext. mod 2
2022
Crolles 2-ext. mod 3
2023
Crolles 2
2004
28,000
1985
SiC Fab
2006
Sweden
Norrköping
10,000
Fab 3
2005
Tours
2,000
Fab 1 & Fab 2
1978
55,000
Fab 2
1997
Catania
SGFAB-AMK 6E
2003
145,000
SGFAB-AMJ 9
1984
152,000
AG300 (R3)
1980
25,000
1987
34,000
AG300
2024
Crolles 2-ext. mod 1
2020
Fab 1 6-inch fab
2013
11,000
SiC 6-inch line
2021
2,500
200mm GaN
2018
SGFAB-AMK 8
2001
Crolles 2- JV Fab
SGFAB-AMK 6
2016
38,125
SGFAB-AMK 2E
2010
20,000
Silicon Carbide A.B.
SiC wafer/EPI Fab
SiC Device Fab
2025
BAV99W-7-F
Diodes Incorporated
Diodes Incorporated BAV99W-7-F is a fast recovery rectifier diode with 2 elements in series connected, center tap configuration. It has a max reverse recovery time of 0.004 us and can handle a max output current of 0.15 A. Ideal for applications requiring fast switching capabilities and operating temperatures ranging from -65 to 150 °C.
BAV99
Comchip Technology
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;
DS18B20U
Maxim Integrated
DS18B20U by Maxim Integrated is a 12-bit temperature sensor with 1-Wire interface. It operates b/w -55 to 125°C, offering ±0.5°C accuracy. Suitable for applications requiring digital output and surface mounting feature.
SMBJ18CA
Hy Electronic
TRANS VOLTAGE SUPPRESSOR DIODE; Terminal Position: DUAL; Terminal Form: C BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
LL4148
Semtech Electronics
RECTIFIER DIODE; Terminal Position: END; Terminal Form: WRAP AROUND; No. of Terminals: 2; Surface Mount: YES; Package Shape: ROUND;
LM358N
STMicroelectronics
OPERATIONAL AMPLIFIER; Temperature Grade: COMMERCIAL; Terminal Form: THROUGH-HOLE; No. of Terminals: 8; Package Code: DIP; Package Shape: RECTANGULAR;
1N4148WS
Good-ark Electronics
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
1N4148WT
Jiangsu Changjiang Electronics Technology
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: FLAT; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
DS18B20
DS18B20 by Maxim Integrated is a 12-bit digital temperature sensor with 1-Wire interface. It operates b/w -55 to 125°C, with ±0.5°C accuracy. Commonly used in applications requiring precise temperature monitoring like HVAC systems and industrial automation.
Vishay Semiconductors
BSS138
Calogic
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .36 W; Terminal Finish: Tin/Lead (Sn/Pb); Maximum Drain Current (Abs) (ID): .2 A;
CRCW04020000Z0EDHP
Vishay Intertechnology
Vishay Intertechnology's CRCW04020000Z0EDHP is a 0402 SMT resistor with 0 ohm resistance, rated for temperatures from -55°C to 155°C. Ideal for jumper applications in automotive electronics due to AEC-Q200 compliance and compact size of 1mm x 0.5mm x 0.3mm.
1N4148
First Components International
RECTIFIER DIODE; Surface Mount: NO; No. of Phases: 1; Maximum Operating Temperature: 200 Cel; Config: SINGLE; No. of Elements: 1;
KSZ9031RNXIA
Microchip Technology
KSZ9031RNXIA by Microchip is a 48-terminal Ethernet transceiver with data rate of 1000 Mbps. Operating temperature range from -40 to 85°C makes it suitable for industrial applications. This square-shaped chip carrier has a very thin profile and matte tin finish, ideal for network interfaces.
ESD5Z5.0T1G
Onsemi
ESD5Z5.0T1G by Onsemi is a unidirectional Trans Voltage Suppressor Diode with 5V reverse test voltage and 174W peak power dissipation. It is used for transient suppression in electronic circuits, meeting IEC-61000-4-2, 4-4 standards and UL recognized for reliability.
General Semiconductor
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .35 W; Minimum DS Breakdown Voltage: 50 V; Qualification: Not Qualified;
BSS138PS,115
Nexperia
N-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; No. of Elements: 2; No. of Terminals: 6; Minimum DS Breakdown Voltage: 60 V;
Synsemi
Changzhou Galaxy Century Microelectronics
IRG7PH42UD2PBF
International Rectifier
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 321 W; Maximum Collector Current (IC): 60 A; Maximum Operating Temperature: 175 Cel;
IRG7PH42UDPBF
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 320 W; Maximum Collector Current (IC): 85 A; Qualification: Not Qualified;
IKW60N60H3FKSA1
Infineon Technologies
IKW60N60H3FKSA1 by Infineon is an N-CHANNEL IGBT with 600V max collector-emitter voltage and 80A max collector current. It has a turn-off time of 314ns and turn-on time of 64ns, making it ideal for power control applications. The transistor comes in a rectangular package with through-hole terminals and built-in diode.
MMIX4G20N250
Littelfuse
MMIX4G20N250 by Littelfuse is an N-CHANNEL IGBT with 4 elements, VCEsat of 3.1V, and IC of 23A. Ideal for general purpose switching applications, it has a max VCE of 2500V and can handle up to 100W power dissipation. This surface-mount transistor operates at temperatures up to 150°C with fast turn-on (ton) and turn-off (toff) times.
IRG4PSH71UDPBF
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 350 W; Maximum Collector Current (IC): 99 A; JESD-30 Code: R-PSIP-T3;
APT85GR120JD60
Microsemi
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 543 W; Maximum Collector Current (IC): 116 A; Maximum Operating Temperature: 150 Cel;
IXYP20N65C3D1
IXYP20N65C3D1 by Littelfuse is an N-CHANNEL IGBT with 650V VCE, 50A IC, and 2.5V VCEsat. Ideal for POWER CONTROL applications, it features a single configuration with built-in diode and operates b/w -55 to 175 °C.
FGL60N100BNTD
FGL60N100BNTD by Onsemi is an N-CHANNEL IGBT with 1000V VCE, 60A IC, and 460ns ton. Ideal for power control applications, it features a single configuration with built-in diode in a rectangular package suitable for flange mount installations.
SKM150GB12T4
Semikron International
SKM150GB12T4 by Semikron is an N-CHANNEL IGBT with 2 SERIES CONNECTED elements. It has a max VCEsat of 2.05V and can handle up to 230A of collector current. Ideal for POWER CONTROL applications, this device operates at a max temperature of 175°C with a collector-emitter voltage rating of 1200V.
RGTVX6TS65DGC11
ROHM
ROHM RGTVX6TS65DGC11 is an N-CHANNEL IGBT with 650V max collector-emitter voltage, ideal for power control applications. Featuring a single configuration with built-in diode, it has a 144A max collector current and 298ns nominal turn off time. This IGBT operates b/w -40°C to 175°C temperature range.
IXGR32N170H1
IXGR32N170H1 by Littelfuse is an N-CHANNEL IGBT with 1700V VCE, 38A IC, and 200W Ptot. Ideal for power control applications, it features a single configuration with built-in diode and operates up to 150°C.
F3L150R07W2E3B11BOMA1
Infineon's F3L150R07W2E3B11BOMA1 IGBT features N-CHANNEL polarity, 650V VCEmax, and 150A IC. Ideal for power control applications with a max operating temp of 150°C. Complex configuration with 4 elements, 480ns toff, and 155ns ton for efficient power management.
IKW25N120H3
IKW25N120H3 by Infineon Technologies is a N-CHANNEL IGBT with a max collector-emitter voltage of 1200V and max collector current of 50A. It is used for power control applications, offering a nominal turn-off time of 397ns and max power dissipation of 326W.
APT150GN60JDQ4
Advanced Power Technology
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Collector Current (IC): 220 A; Package Body Material: PLASTIC/EPOXY; Case Connection: ISOLATED;
IRG4BC30KD-SPBF
IRG4BC30KD-SPBF by Infineon Technologies is an N-channel insulated gate bipolar transistor (IGBT) with a max collector-emitter voltage of 600V and a max collector current of 28A. It is commonly used in motor control applications due to its single configuration with built-in diode and small outline package style.
FGD3040G2-F085C
Onsemi's FGD3040G2-F085C is an N-CHANNEL IGBT with built-in diode and resistor, ideal for automotive ignition applications. It features a max VCEsat of 1.25V, collector-emitter voltage of 450V, and can handle a max current of 41A. This surface-mount transistor has a package style of small outline and operates b/w -55 to 175 °C.
SKM300GB12E4
SKM300GB12E4 by Semikron is a N-CHANNEL IGBT with 2 SERIES CONNECTED elements. It has a VCEsat of 2.1V, IC of 422A, and toff of 637ns. Ideal for POWER CONTROL applications due to its high voltage rating (1200V) and fast switching times (ton: 264ns).
HGTD3N60C3S9A
Harris Semiconductor
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Collector Current (IC): 6 A; Nominal Turn Off Time (toff): 325 ns; Case Connection: COLLECTOR;
BSM150GB120DLC
Infineon's BSM150GB120DLC is a N-CHANNEL IGBT with 2 SERIES CONNECTED elements, VCEsat of 2.6V, and IC of 300A. Ideal for high-power applications requiring fast switching with toff of 650ns and ton of 190ns. Suitable for use in power converters, motor drives, and renewable energy systems.
FF900R12IE4VBOSA1
FF900R12IE4VBOSA1 by Infineon Technologies is an N-CHANNEL IGBT with a max collector-emitter voltage of 1200V. It has a nominal turn-off time of 940ns and a nominal turn-on time of 350ns. This IGBT is commonly used in applications that require high power switching, such as motor drives and power supplies.
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STGP6NC60HD
STGP6NC60HD by STMicroelectronics is an N-CHANNEL IGBT with 600V max collector-emitter voltage, 15A max collector current, and 56W max power dissipation. Ideal for power control applications due to its single configuration with built-in diode and fast turn-off time of 222ns. Package style is flange mount with through-hole terminals.
STGP30H60DFB
STMicroelectronics' STGP30H60DFB is an N-CHANNEL IGBT with 600V VCE, 60A IC, and 223ns toff. Ideal for power control applications, it features a single configuration with built-in diode in a rectangular package suitable for flange mount installations.
STGP5H60DF
STGP5H60DF by STMicroelectronics is an N-CHANNEL IGBT with VCEsat of 1.95V, IC of 10A, and Ptot of 88W. Ideal for power control applications due to its fast turn-off time (toff) of 280ns and high collector-emitter voltage rating of 600V. The package style is flange mount with through-hole terminals.
STGP10NC60HD
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 60 W; Maximum Collector Current (IC): 9 A; Maximum Gate-Emitter Threshold Voltage: 5.75 V;
STGP15H60DF
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 115 W; Maximum Collector Current (IC): 30 A; Maximum VCEsat: 2 V;
STGP35HF60W
N-CHANNEL; Surface Mount: NO; Maximum Power Dissipation (Abs): 200 W; Maximum Collector Current (IC): 60 A; Maximum Operating Temperature: 150 Cel; Maximum Collector-Emitter Voltage: 600 V;
STGP20V60DF
N-CHANNEL; Surface Mount: NO; Maximum Collector Current (IC): 40 A; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED; Maximum Gate-Emitter Voltage: 20 V; Peak Reflow Temperature (C): NOT SPECIFIED;
STGP100N30
STMicroelectronics' STGP100N30 is an N-CHANNEL IGBT with 330V VCE, 90A IC, and 250W Ptot. Ideal for general purpose switching applications due to its fast 310ns turn-off time and max operating temp of 150°C. Package style is flange mount with through-hole terminals.
STGP10M65DF2
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 115 W; Maximum Collector Current (IC): 20 A; Maximum Gate-Emitter Threshold Voltage: 7 V;
STGP30H60DF
N-CHANNEL; Surface Mount: NO; Maximum Power Dissipation (Abs): 150 W; Maximum Collector Current (IC): 60 A; Maximum Operating Temperature: 150 Cel; Peak Reflow Temperature (C): NOT SPECIFIED;
STGP14NC60KD
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 80 W; Maximum Collector Current (IC): 25 A; No. of Elements: 1;
STGP20H60DF
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 167 W; Maximum Collector Current (IC): 40 A; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED;
STGP30M65DF2
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 258 W; Maximum Collector Current (IC): 60 A; Package Shape: RECTANGULAR;
STGP30NC60S
N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 175 W; Maximum Collector Current (IC): 55 A; Package Shape: RECTANGULAR;
STGP30V60F
STGP30V60F by STMicroelectronics is an N-CHANNEL IGBT with 600V VCEsat, 260W power dissipation, and 60A collector current. Ideal for POWER CONTROL applications, it has a turn-off time of 225ns and operates b/w -55 to 175°C.
STGP7NC60HD
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 80 W; Maximum Collector Current (IC): 25 A; Maximum Gate-Emitter Threshold Voltage: 5.75 V;
STGP8NC60KD
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 65 W; Maximum Collector Current (IC): 15 A; JEDEC-95 Code: TO-220AB;
STGP7NB60HD
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 80 W; Maximum Collector Current (IC): 14 A; Maximum Collector-Emitter Voltage: 600 V;
STGP10NC60KT4
N-CHANNEL; Surface Mount: YES; Maximum Power Dissipation (Abs): 60 W; Maximum Collector Current (IC): 20 A; Maximum Gate-Emitter Threshold Voltage: 7 V; Maximum Gate-Emitter Voltage: 20 V;
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