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STGB14NC60KDT4

STMicroelectronics

STGB14NC60KDT4 by STMicroelectronics

STGB14NC60KDT4 by STMicroelectronics is an N-CHANNEL IGBT with 600V max collector-emitter voltage, 25A max collector current, and 80W max power dissipation. Ideal for power control applications due to its single configuration with built-in diode and fast turn-off time of 340ns.

Median Price

$2.090

Lifecycle Status

Suppliers In-Stock

7

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Mouser Electronics

USA . 549 parts In-Stock

1+ parts

$2.090

100+ parts

$0.948

1k+ parts

$0.660

10k+ parts

$0.639

549

$2.090

$0.948

$0.660

$0.639

DigiKey

USA . 73 parts In-Stock

1+ parts

$2.090

100+ parts

$0.905

1k+ parts

$0.661

10k+ parts

$0.558

73

$2.090

$0.905

$0.661

$0.558

Avnet

USA . 3,000 parts In-Stock

1+ parts

-

100+ parts

-

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-

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3,000

-

-

-

-

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Nova Conductors

Japan . 10 parts In-Stock

1+ parts

$1.112

100+ parts

-

1k+ parts

-

10k+ parts

-

10

$1.112

-

-

-

Digiode

USA . 1,646 parts In-Stock

1+ parts

$1.948

100+ parts

-

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-

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1,646

$1.948

-

-

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Vyrian

USA . 1,099 parts In-Stock

1+ parts

-

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1,099

-

-

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Anansix

USA . 185 parts In-Stock

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-

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185

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Aztec Data Supply Inc.

USA . 743 parts In-Stock

1+ parts

$0.940

100+ parts

-

1k+ parts

-

10k+ parts

-

743

$0.940

-

-

-

Continental Prestige Electronics

USA . 4,491 parts In-Stock

1+ parts

$1.112

100+ parts

-

1k+ parts

-

10k+ parts

$1.090

4,491

$1.112

-

-

$1.090

Netroflash

USA . 2,000 parts In-Stock

1+ parts

$1.112

100+ parts

$1.090

1k+ parts

-

10k+ parts

-

2,000

$1.112

$1.090

-

-

Argo Parts USA

USA . 1,692 parts In-Stock

1+ parts

$1.112

100+ parts

-

1k+ parts

-

10k+ parts

-

1,692

$1.112

-

-

-

Modulus Dynamics

Lithuania . 23 parts In-Stock

1+ parts

$1.199

100+ parts

$1.187

1k+ parts

$1.151

10k+ parts

-

23

$1.199

$1.187

$1.151

-

Advanced Electronics

New Zealand . 500 parts In-Stock

1+ parts

$1.290

100+ parts

$1.187

1k+ parts

$1.112

10k+ parts

-

500

$1.290

$1.187

$1.112

-

IDEA Electronic Components Group

UK . 1,051 parts In-Stock

1+ parts

$1.618

100+ parts

-

1k+ parts

$1.456

10k+ parts

-

1,051

$1.618

-

$1.456

-

Ampacity Inc.

Singapore . 1,815 parts In-Stock

1+ parts

$1.740

100+ parts

-

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-

10k+ parts

-

1,815

$1.740

-

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Semicontronic

India . 1,581 parts In-Stock

1+ parts

$1.740

100+ parts

$1.696

1k+ parts

$1.688

10k+ parts

-

1,581

$1.740

$1.696

$1.688

-

Corphita

USA . 2,215 parts In-Stock

1+ parts

$1.845

100+ parts

-

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-

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2,215

$1.845

-

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Corohmni

South Africa . 57 parts In-Stock

1+ parts

$1.870

100+ parts

-

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57

$1.870

-

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MKK Technologies

India . 1,767 parts In-Stock

1+ parts

$3.043

100+ parts

-

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10k+ parts

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1,767

$3.043

-

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DigiPath Technology Company

USA . 1,767 parts In-Stock

1+ parts

$3.043

100+ parts

-

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1,767

$3.043

-

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Microchip USA

USA . 8,965 parts In-Stock

1+ parts

$6.890

100+ parts

-

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8,965

$6.890

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Andel Nordic

Denmark . 4,214 parts In-Stock

1+ parts

$8.330

100+ parts

-

1k+ parts

$7.996

10k+ parts

$7.996

4,214

$8.330

-

$7.996

$7.996

RC Electronics

USA . 34,275 parts In-Stock

1+ parts

-

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34,275

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Kepictronics

USA . 15,000 parts In-Stock

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15,000

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Lixinc

USA . 4,320 parts In-Stock

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4,320

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Futuretech Components

Singapore . 4,000 parts In-Stock

1+ parts

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4,000

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Perfect Parts

USA . 2,348 parts In-Stock

1+ parts

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2,348

-

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Parana Technologies

USA . 1,338 parts In-Stock

1+ parts

-

100+ parts

$1.935

1k+ parts

-

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1,338

-

$1.935

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Robosynatics

Brazil . 450 parts In-Stock

1+ parts

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450

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-

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Lucentia Tech

USA . 450 parts In-Stock

1+ parts

-

100+ parts

$1.655

1k+ parts

$1.655

10k+ parts

$1.655

450

-

$1.655

$1.655

$1.655

Overview

Unleash the power of innovation with the STGB14NC60KDT4 by STMicroelectronics. As a leading manufacturer in the industry, STMicroelectronics delivers top-quality Insulated Gate Bipolar Transistors (IGBT) like no other. Ideal for power control applications, this N-CHANNEL transistor offers unparalleled performance and reliability. With a built-in diode and maximum operating temperature of 150°C, this product ensures efficient power dissipation and seamless operation. Trust STMicroelectronics to provide you with cutting-edge technology that exceeds expectations and drives your projects to new heights.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides good insulation properties, making the IGBT suitable for high power control applications.

Transistor Application: POWER CONTROL

Designed specifically for power control applications, ensuring efficient and reliable performance.

Maximum Power Dissipation (Abs): 80 W

With a high maximum power dissipation, this IGBT can handle heavy loads and prevent overheating issues.

Maximum Operating Temperature: 150 °C

Operating at a high temperature range allows for versatility and reliability in various environments.

Maximum Collector-Emitter Voltage: 600 V

The high collector-emitter voltage rating provides safety margin and reliability in high voltage applications.

Maximum Collector Current (IC): 25 A

A high collector current rating ensures the IGBT can handle large currents without malfunctioning.

Technical Specifications

Insulated Gate Bipolar Transistors (IGBT) STGB14NC60KDT4 attributes and parameters. Explore more Insulated Gate Bipolar Transistors (IGBT) devices from STMicroelectronics

Specs

Additional Features:

ULTRA FAST

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

600 V

Maximum Gate-Emitter Threshold Voltage:

7 V

Maximum Gate-Emitter Voltage:

20 V

JEDEC-95 Code:

TO-263AB

JESD-30 Code:

R-PSSO-G2

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

245

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Insulated Gate BIP Transistors

Surface Mount:

YES

Terminal Finish:

Matte Tin (Sn) - annealed

Terminal Form:

GULL WING

Terminal Position:

SINGLE

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

POWER CONTROL

Transistor Element Material:

SILICON

Nominal Turn Off Time (toff):

340 ns

Nominal Turn On Time (ton):

31.5 ns

Trade Compliance

STGB14NC60KDT4 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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