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STGB12NB60KD

STMicroelectronics

STGB12NB60KD by STMicroelectronics

STGB12NB60KD from STMicroelectronics is a powerful N-channel IGBT designed for motor control applications. It features a max collector-emitter voltage of 600 V, power dissipation of 125 W, and fast switching times (toff: 461 ns, ton: 39.5 ns). This compact device ensures efficient performance in demanding environments.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 3,821 parts In-Stock

1+ parts

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3,821

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Digiode

USA . 2,802 parts In-Stock

1+ parts

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2,802

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Anansix

USA . 345 parts In-Stock

1+ parts

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345

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

IDEA Electronic Components Group

UK . 537 parts In-Stock

1+ parts

$1.831

100+ parts

-

1k+ parts

$1.648

10k+ parts

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537

$1.831

-

$1.648

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MKK Technologies

India . 1,682 parts In-Stock

1+ parts

$3.443

100+ parts

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1,682

$3.443

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DigiPath Technology Company

USA . 1,682 parts In-Stock

1+ parts

$3.443

100+ parts

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1,682

$3.443

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Metaverse IC Inc.

Canada . 56,986 parts In-Stock

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56,986

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Parana Technologies

USA . 1,490 parts In-Stock

1+ parts

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100+ parts

$2.189

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1,490

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$2.189

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Corphita

USA . 577 parts In-Stock

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577

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Overview

Unlock superior performance and reliability with the STGB12NB60KD from STMicroelectronics, a trusted leader in semiconductor innovation. This high-quality N-channel IGBT is designed for motor control applications, ensuring efficiency and durability in demanding environments. With its compact surface mount package and built-in diode, it simplifies designs while providing exceptional power handling up to 125 W. Elevate your projects with ST’s unmatched quality and experience seamless integration for optimal results!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy for the package body provides good insulation and durability, making this IGBT ideal for various environmental conditions.

Polarity or Channel Type: N-CHANNEL

The N-channel configuration allows for efficient and effective switching, making it suitable for high-performance applications.

Configuration: SINGLE WITH BUILT-IN DIODE

Having a single configuration with a built-in diode simplifies design and enhances application versatility, especially in motor control.

Transistor Application: MOTOR CONTROL

Designed specifically for motor control applications, this IGBT can efficiently manage power handling and switching for motors.

Surface Mount: YES

Surface mount technology enables easy integration into compact circuit designs, improving space efficiency and assembly speed.

Package Shape: RECTANGULAR

The rectangular package shape allows efficient layout and design in printed circuit boards (PCBs), enhancing thermal performance.

Terminal Form: GULL WING

Gull wing terminals provide excellent soldering surface, ensuring reliable connections for high-performance applications.

Nominal Turn Off Time (toff): 461 ns

A fast turn off time enhances switching efficiency, reducing energy losses and improving overall system performance.

No. of Terminals: 2

With only two terminals, this IGBT simplifies connections, making it easier to integrate into various electronic circuits.

Maximum Power Dissipation (Abs): 125 W

A maximum power dissipation of 125W allows this IGBT to handle significant power loads, making it reliable for demanding applications.

Package Style (Meter): SMALL OUTLINE

The small outline package style helps save space on PCBs, allowing for more compact designs and efficient layouts.

Maximum Operating Temperature: 150 °C

With a high maximum operating temperature, this IGBT is suitable for operation in harsh environments, enhancing its reliability.

Maximum Collector-Emitter Voltage: 600 V

Capable of handling up to 600V of collector-emitter voltage, this IGBT is versatile for various high-voltage applications.

Transistor Element Material: SILICON

Silicon as the element material offers good thermal and electrical performance, contributing to improved efficiency.

Maximum Gate-Emitter Voltage: 20 V

The 20V gate-emitter voltage ensures compatibility with a wide range of driving circuits, simplifying system design.

Maximum Collector Current (IC): 30 A

A maximum collector current capability of 30A makes this IGBT suitable for high-current applications, ensuring robust performance.

Maximum Gate-Emitter Threshold Voltage: 7 V

The 7V threshold voltage simplifies gate drive requirements, enhancing the IGBT's usability in various circuits.

Terminal Finish: MATTE TIN

The matte tin terminal finish enhances solderability and provides improved corrosion resistance, ensuring long-term reliability.

Terminal Position: SINGLE

Having a single terminal position simplifies PCB layout and assembly processes, making it user-friendly for designers.

Nominal Turn On Time (ton): 39.5 ns

A nominal turn on time of 39.5 ns contributes to faster switching operations, reducing energy wastage and improving efficiency.

Technical Specifications

Insulated Gate Bipolar Transistors (IGBT) STGB12NB60KD attributes and parameters. Explore more Insulated Gate Bipolar Transistors (IGBT) devices from STMicroelectronics

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

600 V

Maximum Gate-Emitter Threshold Voltage:

7 V

Maximum Gate-Emitter Voltage:

20 V

JESD-30 Code:

R-PSSO-G2

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Insulated Gate BIP Transistors

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

GULL WING

Terminal Position:

SINGLE

Transistor Application:

MOTOR CONTROL

Transistor Element Material:

SILICON

Nominal Turn Off Time (toff):

461 ns

Nominal Turn On Time (ton):

39.5 ns

Trade Compliance

STGB12NB60KD Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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