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STGB20N45LZAG

STMicroelectronics

STGB20N45LZAG by STMicroelectronics

STGB20N45LZAG by STMicroelectronics is an N-CHANNEL IGBT with a max VCEsat of 1.25V and a max collector-emitter voltage of 475V. It is designed for automotive ignition applications, has a small outline package style, and can operate at temperatures up to 175°C.

Median Price

$1.460

Lifecycle Status

Suppliers In-Stock

14

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Newark

USA . 1,883 parts In-Stock

1+ parts

$2.310

100+ parts

-

1k+ parts

-

10k+ parts

-

1,883

$2.310

-

-

-

DigiKey

USA . 844 parts In-Stock

1+ parts

$2.890

100+ parts

$1.288

1k+ parts

$0.961

10k+ parts

$0.869

844

$2.890

$1.288

$0.961

$0.869

Element14

Singapore . 1,975 parts In-Stock

1+ parts

$229.050

100+ parts

$152.010

1k+ parts

$109.680

10k+ parts

-

1,975

$229.050

$152.010

$109.680

-

Arrow

USA . 1,626,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$1.285

10k+ parts

$1.167

1,626,000

-

-

$1.285

$1.167

Verical

USA . 92,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$1.085

10k+ parts

$1.006

92,000

-

-

$1.085

$1.006

Farnell

UK . 2,000 parts In-Stock

1+ parts

-

100+ parts

$1.460

1k+ parts

$1.060

10k+ parts

-

2,000

-

$1.460

$1.060

-

Avnet

USA . 1,000 parts In-Stock

1+ parts

-

100+ parts

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1,000

-

-

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RS (Exports)

UK . 950 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$1.445

10k+ parts

-

950

-

-

$1.445

-

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 2,116 parts In-Stock

1+ parts

$2.565

100+ parts

-

1k+ parts

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2,116

$2.565

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-

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Vyrian

USA . 276,791 parts In-Stock

1+ parts

-

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276,791

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Anansix

USA . 2,025 parts In-Stock

1+ parts

-

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2,025

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ComSIT Distribution GmbH

Germany . 1,582 parts In-Stock

1+ parts

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100+ parts

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1,582

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Nova Conductors

Japan . 300 parts In-Stock

1+ parts

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300

-

-

-

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Bristol Electronics

USA . 47 parts In-Stock

1+ parts

-

100+ parts

$1.500

1k+ parts

-

10k+ parts

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47

-

$1.500

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

IDEA Electronic Components Group

UK . 2,234 parts In-Stock

1+ parts

$0.619

100+ parts

-

1k+ parts

$0.557

10k+ parts

-

2,234

$0.619

-

$0.557

-

Ampacity Inc.

Singapore . 277,046 parts In-Stock

1+ parts

$1.050

100+ parts

-

1k+ parts

-

10k+ parts

-

277,046

$1.050

-

-

-

Semicontronic

India . 276,870 parts In-Stock

1+ parts

$1.050

100+ parts

$1.024

1k+ parts

$1.018

10k+ parts

-

276,870

$1.050

$1.024

$1.018

-

MKK Technologies

India . 2,308 parts In-Stock

1+ parts

$1.164

100+ parts

-

1k+ parts

-

10k+ parts

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2,308

$1.164

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-

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DigiPath Technology Company

USA . 2,308 parts In-Stock

1+ parts

$1.164

100+ parts

-

1k+ parts

-

10k+ parts

-

2,308

$1.164

-

-

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Corohmni

South Africa . 257 parts In-Stock

1+ parts

$1.296

100+ parts

-

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-

10k+ parts

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257

$1.296

-

-

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Aztec Data Supply Inc.

USA . 157 parts In-Stock

1+ parts

$1.870

100+ parts

-

1k+ parts

-

10k+ parts

-

157

$1.870

-

-

-

Advanced Electronics

New Zealand . 1,000 parts In-Stock

1+ parts

$2.021

100+ parts

$1.920

1k+ parts

$1.920

10k+ parts

-

1,000

$2.021

$1.920

$1.920

-

Corphita

USA . 1,202 parts In-Stock

1+ parts

$2.430

100+ parts

-

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1,202

$2.430

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-

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Microchip USA

USA . 472 parts In-Stock

1+ parts

$8.981

100+ parts

-

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472

$8.981

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Infinite Electronics LLP (Excess)

. 220,004 parts In-Stock

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220,004

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Lixinc

USA . 17,081 parts In-Stock

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17,081

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GreenTree Electronics

Israel . 10,000 parts In-Stock

1+ parts

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A-Z Elektronik GmbH

Germany . 5,888 parts In-Stock

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5,888

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Perfect Parts

USA . 3,360 parts In-Stock

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3,360

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S.R.D Solutions

India . 2,000 parts In-Stock

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2,000

-

-

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Argo Parts USA

USA . 769 parts In-Stock

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769

-

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Parana Technologies

USA . 582 parts In-Stock

1+ parts

-

100+ parts

$0.740

1k+ parts

-

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582

-

$0.740

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Continental Prestige Electronics

USA . 569 parts In-Stock

1+ parts

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569

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iodParts Technologies Inc.

India . 480 parts In-Stock

1+ parts

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480

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Bastille Electronics

Australia . 300 parts In-Stock

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300

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Authorized Procurement Solutions

USA . 116 parts In-Stock

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116

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Overview

Experience the power and reliability of the STGB20N45LZAG by STMicroelectronics. As a leading manufacturer in the industry, STMicroelectronics ensures top-notch quality and exceptional performance. This Insulated Gate Bipolar Transistor (IGBT) is perfect for automotive ignition applications, providing seamless functionality and reliable operation. With its built-in TVS diode and resistor, it offers added protection and convenience. Designed with a small outline package shape, gull wing terminals, and a robust plastic/epoxy body material, this IGBT is easy to install and delivers outstanding results. Trust in STMicroelectronics to provide you with cutting-edge technology that exceeds expectations.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides good insulation and protection for the internal components, making the product reliable and durable.

Polarity or Channel Type: N-CHANNEL

N-channel IGBTs have lower conduction losses and higher switching speeds compared to P-channel IGBTs, making them efficient for high-power applications.

Configuration: SINGLE WITH BUILT-IN TVS DIODE AND RESISTOR

The built-in TVS diode and resistor offer added protection against voltage surges and spikes, enhancing the safety of the automotive ignition system.

Transistor Application: AUTOMOTIVE IGNITION

Specifically designed for automotive ignition systems, ensuring optimal performance and reliability in this application.

Surface Mount: YES

Easy to install on PCBs, saving time and effort during assembly.

Maximum VCEsat: 1.25 V

Low saturation voltage results in lower power dissipation and higher efficiency.

Package Shape: RECTANGULAR

Compact shape that allows for efficient use of space on the PCB.

Terminal Form: GULL WING

Gull wing terminals provide secure and reliable connections, reducing the risk of disconnection.

Nominal Turn Off Time (toff): 14500 ns

Fast turn-off time helps improve overall system efficiency and performance.

No. of Terminals: 2

Simplifies the connection process, making installation easier.

Maximum Power Dissipation (Abs): 150 W

High power dissipation capability allows the IGBT to handle heavy loads without overheating.

Package Style (Meter): SMALL OUTLINE

Small outline package saves space on the PCB and allows for compact designs.

Maximum Operating Temperature: 175 °C

Can operate efficiently in high-temperature environments, suitable for automotive applications.

Maximum Collector-Emitter Voltage: 475 V

Wide voltage range allows for versatility in different circuit applications.

Transistor Element Material: SILICON

Silicon material offers good electrical properties and reliability for the transistor element.

Maximum Gate-Emitter Voltage: 16 V

Suitable voltage rating for gate-emitter protection, ensuring the stability and longevity of the IGBT.

Minimum Operating Temperature: -55 °C

Can operate in cold temperatures, making it suitable for automotive applications in various climates.

Maximum Collector Current (IC): 25 A

High collector current rating allows for handling high current loads without issues.

Maximum Gate-Emitter Threshold Voltage: 2.1 V

Low gate-emitter threshold voltage enables efficient switching and control of the IGBT.

Terminal Position: SINGLE

Simple terminal configuration makes the product easy to integrate into the circuit.

Case Connection: COLLECTOR

Collector case connection provides effective heat dissipation and electrical isolation.

Nominal Turn On Time (ton): 4560 ns

Fast turn-on time ensures quick response and efficient operation of the IGBT.

Reference Standard: AEC-Q101

Compliance with automotive quality standards ensures reliability and performance in automotive applications.

Technical Specifications

Insulated Gate Bipolar Transistors (IGBT) STGB20N45LZAG attributes and parameters. Explore more Insulated Gate Bipolar Transistors (IGBT) devices from STMicroelectronics

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

475 V

Maximum Gate-Emitter Threshold Voltage:

2.1 V

Maximum Gate-Emitter Voltage:

16 V

JEDEC-95 Code:

TO-263AB

JESD-30 Code:

R-PSSO-G2

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

175 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

NOT SPECIFIED

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Reference Standard:

AEC-Q101

Surface Mount:

YES

Terminal Form:

GULL WING

Terminal Position:

SINGLE

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Transistor Application:

AUTOMOTIVE IGNITION

Transistor Element Material:

SILICON

Nominal Turn Off Time (toff):

14500 ns

Nominal Turn On Time (ton):

4560 ns

Maximum VCEsat:

1.25 V

Trade Compliance

STGB20N45LZAG Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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