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STGB30V60DF

STMicroelectronics

STGB30V60DF by STMicroelectronics

STMicroelectronics' STGB30V60DF is an N-CHANNEL IGBT with 600V max collector-emitter voltage and 60A max collector current. Ideal for power control applications, it features a built-in diode, 225ns turn-off time, and operates up to 175°C.

Median Price

$3.390

Lifecycle Status

Suppliers In-Stock

9

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

DigiKey

USA . 811 parts In-Stock

1+ parts

$3.390

100+ parts

$1.539

1k+ parts

$1.160

10k+ parts

$1.083

811

$3.390

$1.539

$1.160

$1.083

Mouser Electronics

USA . 265 parts In-Stock

1+ parts

$3.390

100+ parts

$1.540

1k+ parts

$1.240

10k+ parts

-

265

$3.390

$1.540

$1.240

-

EBV Elektronik

Germany . 83,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

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83,000

-

-

-

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Avnet

USA . 1,000 parts In-Stock

1+ parts

-

100+ parts

-

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10k+ parts

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1,000

-

-

-

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Verical

USA . 1,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$1.245

10k+ parts

-

1,000

-

-

$1.245

-

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 3,535 parts In-Stock

1+ parts

$0.470

100+ parts

-

1k+ parts

-

10k+ parts

-

3,535

$0.470

-

-

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Nova Conductors

Japan . 100 parts In-Stock

1+ parts

$1.690

100+ parts

-

1k+ parts

-

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100

$1.690

-

-

-

Digiode

USA . 4,762 parts In-Stock

1+ parts

$2.802

100+ parts

-

1k+ parts

-

10k+ parts

-

4,762

$2.802

-

-

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Anansix

USA . 2,731 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

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2,731

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Aztec Data Supply Inc.

USA . 3,979 parts In-Stock

1+ parts

$0.560

100+ parts

-

1k+ parts

-

10k+ parts

-

3,979

$0.560

-

-

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IDEA Electronic Components Group

UK . 1,308 parts In-Stock

1+ parts

$0.615

100+ parts

-

1k+ parts

$0.553

10k+ parts

-

1,308

$0.615

-

$0.553

-

MKK Technologies

India . 2,113 parts In-Stock

1+ parts

$1.156

100+ parts

-

1k+ parts

-

10k+ parts

-

2,113

$1.156

-

-

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DigiPath Technology Company

USA . 2,113 parts In-Stock

1+ parts

$1.156

100+ parts

-

1k+ parts

-

10k+ parts

-

2,113

$1.156

-

-

-

Continental Prestige Electronics

USA . 2,233 parts In-Stock

1+ parts

$1.690

100+ parts

-

1k+ parts

-

10k+ parts

$1.656

2,233

$1.690

-

-

$1.656

Argo Parts USA

USA . 1,588 parts In-Stock

1+ parts

$1.690

100+ parts

-

1k+ parts

-

10k+ parts

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1,588

$1.690

-

-

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Netroflash

USA . 1,000 parts In-Stock

1+ parts

$1.690

100+ parts

-

1k+ parts

$1.606

10k+ parts

$1.572

1,000

$1.690

-

$1.606

$1.572

Corohmni

South Africa . 5 parts In-Stock

1+ parts

$1.720

100+ parts

-

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-

10k+ parts

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5

$1.720

-

-

-

Ampacity Inc.

Singapore . 1,095 parts In-Stock

1+ parts

$2.510

100+ parts

-

1k+ parts

-

10k+ parts

-

1,095

$2.510

-

-

-

Semicontronic

India . 1,094 parts In-Stock

1+ parts

$2.510

100+ parts

$2.447

1k+ parts

$2.435

10k+ parts

-

1,094

$2.510

$2.447

$2.435

-

Corphita

USA . 604 parts In-Stock

1+ parts

$2.655

100+ parts

-

1k+ parts

-

10k+ parts

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604

$2.655

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Metaverse IC Inc.

Canada . 56,986 parts In-Stock

1+ parts

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56,986

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QUARKTWIN TECHNOLOGY LTD

USA . 15,227 parts In-Stock

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15,227

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Microchip USA

USA . 9,084 parts In-Stock

1+ parts

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9,084

-

-

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Lixinc

USA . 8,746 parts In-Stock

1+ parts

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100+ parts

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8,746

-

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iodParts Technologies Inc.

India . 3,098 parts In-Stock

1+ parts

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3,098

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Authorized Procurement Solutions

USA . 3,000 parts In-Stock

1+ parts

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100+ parts

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1k+ parts

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10k+ parts

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3,000

-

-

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Parana Technologies

USA . 751 parts In-Stock

1+ parts

-

100+ parts

$0.735

1k+ parts

-

10k+ parts

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751

-

$0.735

-

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Perfect Parts

USA . 560 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

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10k+ parts

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560

-

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Overview

Experience the power of innovation with the STGB30V60DF from STMicroelectronics. As a leader in the semiconductor industry, STMicroelectronics delivers high-quality Insulated Gate Bipolar Transistors for a wide range of applications. With a single configuration and built-in diode, this N-channel transistor is perfect for power control in various electronic devices. Its fast turn-on and turn-off times, along with a maximum collector current of 60A, ensure optimal performance and efficiency. Trust STMicroelectronics to provide reliable, cutting-edge solutions for your power management needs.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and resistance to external elements, ensuring long-term reliability.

Polarity or Channel Type: N-CHANNEL

Offers efficient power control and superior performance.

Configuration: SINGLE WITH BUILT-IN DIODE

Simplifies circuit design and saves space by integrating a diode within the transistor package.

Transistor Application: POWER CONTROL

Designed for effective power management and control, making it suitable for various industrial applications.

Surface Mount: YES

Allows for easy installation and space-saving on the PCB.

Package Shape: RECTANGULAR

Facilitates efficient mounting and optimal space utilization.

Terminal Form: GULL WING

Enables secure and reliable soldering connections for improved performance.

Maximum Operating Temperature: 175 °C

Ensures reliable operation in high-temperature environments.

Maximum Collector-Emitter Voltage: 600 V

Provides high voltage capability for versatile applications.

Transistor Element Material: SILICON

Offers high efficiency and reliability in power control applications.

Maximum Gate-Emitter Voltage: 20 V

Ensures safe and efficient gate control for optimal performance.

Maximum Collector Current (IC): 60 A

Supports high current operation for demanding power control requirements.

Nominal Turn Off Time (toff): 225 ns

Provides fast switching speed for improved efficiency and performance.

Nominal Turn On Time (ton): 59 ns

Delivers quick turn-on time for rapid power control response.

Technical Specifications

Insulated Gate Bipolar Transistors (IGBT) STGB30V60DF attributes and parameters. Explore more Insulated Gate Bipolar Transistors (IGBT) devices from STMicroelectronics

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

600 V

Maximum Gate-Emitter Voltage:

20 V

JEDEC-95 Code:

TO-263AB

JESD-30 Code:

R-PSSO-G2

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

175 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

NOT SPECIFIED

Polarity or Channel Type:

Sub-Category:

Insulated Gate BIP Transistors

Surface Mount:

YES

Terminal Form:

GULL WING

Terminal Position:

SINGLE

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Transistor Application:

POWER CONTROL

Transistor Element Material:

SILICON

Nominal Turn Off Time (toff):

225 ns

Nominal Turn On Time (ton):

59 ns

Trade Compliance

STGB30V60DF Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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