Loading...

STGB30M65DF2

STMicroelectronics

STGB30M65DF2 by STMicroelectronics

STGB30M65DF2 by STMicroelectronics is an N-CHANNEL IGBT with 650V VCE, 60A IC, and 2V VCEsat. Ideal for POWER CONTROL applications due to its built-in diode, low turn-off time of 310ns, and high power dissipation of 258W. Suitable for surface mount with gull wing terminals in a small outline package.

Median Price

$1.698

Lifecycle Status

Suppliers In-Stock

11

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

DigiKey

USA . 1,107 parts In-Stock

1+ parts

$3.220

100+ parts

$1.454

1k+ parts

$1.092

10k+ parts

$1.009

1,107

$3.220

$1.454

$1.092

$1.009

Mouser Electronics

USA . 465 parts In-Stock

1+ parts

$3.220

100+ parts

$1.460

1k+ parts

$1.170

10k+ parts

-

465

$3.220

$1.460

$1.170

-

Chip1Stop

Japan . 2,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$1.190

10k+ parts

-

2,000

-

-

$1.190

-

Avnet

USA . 1,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

1,000

-

-

-

-

Arrow

USA . 1,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$1.210

10k+ parts

-

1,000

-

-

$1.210

-

Verical

USA . 880 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$1.698

10k+ parts

-

880

-

-

$1.698

-

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Nova Conductors

Japan . 750 parts In-Stock

1+ parts

$1.825

100+ parts

-

1k+ parts

-

10k+ parts

-

750

$1.825

-

-

-

Digiode

USA . 4,874 parts In-Stock

1+ parts

$2.670

100+ parts

-

1k+ parts

-

10k+ parts

-

4,874

$2.670

-

-

-

IBS Electronics

USA . 14,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$1.326

10k+ parts

$1.280

14,000

-

-

$1.326

$1.280

Vyrian

USA . 6,778 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

6,778

-

-

-

-

Anansix

USA . 1,768 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

1,768

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Aztec Data Supply Inc.

USA . 3,993 parts In-Stock

1+ parts

$0.910

100+ parts

-

1k+ parts

-

10k+ parts

-

3,993

$0.910

-

-

-

Semicontronic

India . 1,026 parts In-Stock

1+ parts

$1.010

100+ parts

$0.985

1k+ parts

$0.980

10k+ parts

-

1,026

$1.010

$0.985

$0.980

-

Ampacity Inc.

Singapore . 894 parts In-Stock

1+ parts

$1.010

100+ parts

-

1k+ parts

-

10k+ parts

-

894

$1.010

-

-

-

IDEA Electronic Components Group

UK . 1,364 parts In-Stock

1+ parts

$1.166

100+ parts

-

1k+ parts

$1.049

10k+ parts

-

1,364

$1.166

-

$1.049

-

Continental Prestige Electronics

USA . 5,414 parts In-Stock

1+ parts

$1.825

100+ parts

-

1k+ parts

-

10k+ parts

$1.789

5,414

$1.825

-

-

$1.789

Argo Parts USA

USA . 1,497 parts In-Stock

1+ parts

$1.825

100+ parts

-

1k+ parts

-

10k+ parts

-

1,497

$1.825

-

-

-

Netroflash

USA . 100 parts In-Stock

1+ parts

$1.825

100+ parts

-

1k+ parts

$1.734

10k+ parts

$1.697

100

$1.825

-

$1.734

$1.697

Corohmni

South Africa . 75 parts In-Stock

1+ parts

$1.961

100+ parts

-

1k+ parts

-

10k+ parts

-

75

$1.961

-

-

-

MKK Technologies

India . 5 parts In-Stock

1+ parts

$2.192

100+ parts

-

1k+ parts

-

10k+ parts

-

5

$2.192

-

-

-

DigiPath Technology Company

USA . 5 parts In-Stock

1+ parts

$2.192

100+ parts

-

1k+ parts

-

10k+ parts

-

5

$2.192

-

-

-

Corphita

USA . 363 parts In-Stock

1+ parts

$2.529

100+ parts

-

1k+ parts

-

10k+ parts

-

363

$2.529

-

-

-

Microchip USA

USA . 2,788 parts In-Stock

1+ parts

$11.700

100+ parts

-

1k+ parts

-

10k+ parts

-

2,788

$11.700

-

-

-

AZTECH Wire

Italy . 763 parts In-Stock

1+ parts

$19.990

100+ parts

-

1k+ parts

-

10k+ parts

-

763

$19.990

-

-

-

Lixinc

USA . 18,409 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

18,409

-

-

-

-

Authorized Procurement Solutions

USA . 2,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

2,000

-

-

-

-

Futuretech Components

Singapore . 2,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

2,000

-

-

-

-

iodParts Technologies Inc.

India . 1,222 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

1,222

-

-

-

-

Parana Technologies

USA . 1,191 parts In-Stock

1+ parts

-

100+ parts

$1.394

1k+ parts

-

10k+ parts

-

1,191

-

$1.394

-

-

Overview

Upgrade your power control applications with the STGB30M65DF2 Insulated Gate Bipolar Transistor by STMicroelectronics. Manufactured with precision and quality in mind, this N-CHANNEL IGBT offers a single configuration with a built-in diode for seamless integration. With a maximum operating temperature of 175°C and a collector-emitter voltage of 650V, this transistor ensures reliable performance and efficiency. Whether you're working on industrial machinery or renewable energy systems, the STGB30M65DF2 provides the value, benefits, and advantages you need to take your projects to the next level. Trust STMicroelectronics for superior technology that delivers results.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material offers good insulation properties, making the product suitable for high-power applications.

Polarity or Channel Type: N-CHANNEL

N-channel IGBTs have lower ON-resistance and higher efficiency, making them a preferred choice for power control applications.

Configuration: SINGLE WITH BUILT-IN DIODE

Built-in diode allows for easy protection against reverse current, enhancing the reliability of the product.

Transistor Application: POWER CONTROL

Specifically designed for power control applications, ensuring optimal performance in high-power circuits.

Surface Mount: YES

Surface mount package allows for easy installation and space-saving design, making it ideal for compact electronic devices.

Maximum VCEsat: 2 V

Low VCEsat reduces power dissipation and improves efficiency, making this product energy-efficient.

Package Shape: RECTANGULAR

Rectangular shape provides a compact and easy-to-mount design, suitable for a wide range of applications.

Terminal Form: GULL WING

Gull wing terminals offer secure connections and easy soldering, ensuring reliable performance in demanding conditions.

Nominal Turn Off Time (toff): 310 ns

Fast turn-off time improves switching speed and efficiency, making this product suitable for high-frequency applications.

No. of Terminals: 2

Two terminals simplify the connection process and reduce complexity, making the product user-friendly.

Maximum Power Dissipation (Abs): 258 W

High power dissipation capability allows for handling large current loads, making it suitable for high-power applications.

Package Style (Meter): SMALL OUTLINE

Small outline package saves space and facilitates easy installation, making it ideal for compact electronic designs.

Maximum Operating Temperature: 175 °C

High operating temperature range ensures stable performance in harsh environmental conditions, increasing the product's reliability.

Maximum Collector-Emitter Voltage: 650 V

High VCE voltage rating enables the product to handle high voltage applications, ensuring safety and reliability.

Transistor Element Material: SILICON

Silicon material offers high temperature tolerance and better performance characteristics, improving the product's overall efficiency.

Maximum Gate-Emitter Voltage: 20 V

High gate-emitter voltage rating provides protection against voltage spikes, enhancing the product's durability.

Minimum Operating Temperature: -55 °C

Wide temperature range ensures reliable operation in extreme cold conditions, making it suitable for a variety of environments.

Maximum Collector Current (IC): 60 A

High collector current rating allows for handling large current loads, making it suitable for high-power applications.

Maximum Gate-Emitter Threshold Voltage: 7 V

Low gate-emitter threshold voltage ensures efficient and reliable switching, improving the product's overall performance.

Terminal Position: SINGLE

Single terminal position simplifies the connection process and reduces the risk of errors, making the product easy to use.

Case Connection: COLLECTOR

Collector case connection offers better thermal dissipation and improved reliability, enhancing the product's performance.

Nominal Turn On Time (ton): 47 ns

Fast turn-on time improves switching speed and efficiency, making this product suitable for high-speed applications.

Technical Specifications

Insulated Gate Bipolar Transistors (IGBT) STGB30M65DF2 attributes and parameters. Explore more Insulated Gate Bipolar Transistors (IGBT) devices from STMicroelectronics

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

650 V

Maximum Gate-Emitter Threshold Voltage:

7 V

Maximum Gate-Emitter Voltage:

20 V

JEDEC-95 Code:

TO-263AB

JESD-30 Code:

R-PSSO-G2

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

175 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

NOT SPECIFIED

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Surface Mount:

YES

Terminal Form:

GULL WING

Terminal Position:

SINGLE

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Transistor Application:

POWER CONTROL

Transistor Element Material:

SILICON

Nominal Turn Off Time (toff):

310 ns

Nominal Turn On Time (ton):

47 ns

Maximum VCEsat:

2 V

Trade Compliance

STGB30M65DF2 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

Category top products 20

Authentic purchasing experiences

Partstack™ will investigate all reported instances of potential suspect/counterfeit part listings.

Similar products 19