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STGB30H60DFB

STMicroelectronics

STGB30H60DFB by STMicroelectronics

STGB30H60DFB by STMicroelectronics is an N-CHANNEL IGBT with 600V VCE, 60A IC, and 223ns toff. Ideal for POWER CONTROL applications, it features a SINGLE configuration with BUILT-IN DIODE in a PLASTIC/EPOXY package.

Median Price

$1.200

Lifecycle Status

Suppliers In-Stock

10

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Mouser Electronics

USA . 59 parts In-Stock

1+ parts

$3.290

100+ parts

$2.480

1k+ parts

$1.140

10k+ parts

-

59

$3.290

$2.480

$1.140

-

Avnet

USA . 67,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

67,000

-

-

-

-

Chip1Stop

Japan . 13,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$1.235

10k+ parts

$1.140

13,000

-

-

$1.235

$1.140

Arrow

USA . 1,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$1.164

10k+ parts

$1.125

1,000

-

-

$1.164

$1.125

Verical

USA . 1,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$0.806

10k+ parts

-

1,000

-

-

$0.806

-

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Nova Conductors

Japan . 300 parts In-Stock

1+ parts

$1.856

100+ parts

-

1k+ parts

-

10k+ parts

-

300

$1.856

-

-

-

Vyrian

USA . 6,720 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

6,720

-

-

-

-

Digiode

USA . 3,525 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

3,525

-

-

-

-

Anansix

USA . 730 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

730

-

-

-

-

ComSIT Distribution GmbH

Germany . 528 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

528

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Semicontronic

India . 32,489 parts In-Stock

1+ parts

$0.950

100+ parts

$0.926

1k+ parts

$0.922

10k+ parts

-

32,489

$0.950

$0.926

$0.922

-

Ampacity Inc.

Singapore . 32,134 parts In-Stock

1+ parts

$0.950

100+ parts

-

1k+ parts

-

10k+ parts

-

32,134

$0.950

-

-

-

IDEA Electronic Components Group

UK . 1,878 parts In-Stock

1+ parts

$1.104

100+ parts

-

1k+ parts

$0.994

10k+ parts

-

1,878

$1.104

-

$0.994

-

Aztec Data Supply Inc.

USA . 4,534 parts In-Stock

1+ parts

$1.280

100+ parts

-

1k+ parts

-

10k+ parts

-

4,534

$1.280

-

-

-

Modulus Dynamics

Lithuania . 18,617 parts In-Stock

1+ parts

$1.800

100+ parts

$1.800

1k+ parts

$1.800

10k+ parts

-

18,617

$1.800

$1.800

$1.800

-

Corohmni

South Africa . 87 parts In-Stock

1+ parts

$1.800

100+ parts

-

1k+ parts

-

10k+ parts

-

87

$1.800

-

-

-

Argo Parts USA

USA . 2,209 parts In-Stock

1+ parts

$1.856

100+ parts

-

1k+ parts

-

10k+ parts

-

2,209

$1.856

-

-

-

Continental Prestige Electronics

USA . 2,164 parts In-Stock

1+ parts

$1.856

100+ parts

-

1k+ parts

-

10k+ parts

$1.819

2,164

$1.856

-

-

$1.819

MKK Technologies

India . 1,304 parts In-Stock

1+ parts

$2.076

100+ parts

-

1k+ parts

-

10k+ parts

-

1,304

$2.076

-

-

-

DigiPath Technology Company

USA . 1,304 parts In-Stock

1+ parts

$2.076

100+ parts

-

1k+ parts

-

10k+ parts

-

1,304

$2.076

-

-

-

Component Stockers USA

USA . 748 parts In-Stock

1+ parts

$3.630

100+ parts

$2.720

1k+ parts

-

10k+ parts

-

748

$3.630

$2.720

-

-

Microchip USA

USA . 2,006 parts In-Stock

1+ parts

$10.767

100+ parts

-

1k+ parts

-

10k+ parts

-

2,006

$10.767

-

-

-

Corphita

USA . 1,080 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

1,080

-

-

-

-

Parana Technologies

USA . 1,024 parts In-Stock

1+ parts

-

100+ parts

$1.320

1k+ parts

-

10k+ parts

-

1,024

-

$1.320

-

-

Netroflash

USA . 500 parts In-Stock

1+ parts

-

100+ parts

$1.819

1k+ parts

$1.763

10k+ parts

$1.726

500

-

$1.819

$1.763

$1.726

Overview

Unleash the power of the STGB30H60DFB Insulated Gate Bipolar Transistor from STMicroelectronics! Designed with quality and precision, this N-channel transistor is ideal for power control applications. With a maximum collector-emitter voltage of 600V and a collector current of 60A, this transistor offers unmatched reliability and efficiency. Its single configuration with a built-in diode ensures seamless integration, while its fast turn-on and turn-off times guarantee optimal performance. Trust STMicroelectronics to deliver cutting-edge technology that exceeds expectations. Elevate your projects with the STGB30H60DFB today!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy as the package body material ensures durability and reliability for the IGBT.

Polarity or Channel Type: N-CHANNEL

N-channel IGBTs generally have lower conduction losses and higher efficiency, making them suitable for power control applications.

Configuration: SINGLE WITH BUILT-IN DIODE

The built-in diode provides a path for the reverse current flow and protection, enhancing the performance and reliability of the IGBT.

Transistor Application: POWER CONTROL

Specifically designed for power control applications, ensuring optimal performance and efficiency.

Surface Mount: YES

Being surface mountable makes the IGBT easy to integrate into various electronic designs and circuit boards.

Package Shape: RECTANGULAR

The rectangular shape allows for efficient PCB layout and space-saving in electronic devices.

Nominal Turn Off Time (toff): 223 ns

With a fast turn-off time, the IGBT enables quick switching and response times in power control applications.

No. of Terminals: 2

Having only 2 terminals simplifies the connection process and reduces the likelihood of errors during installation.

Maximum Collector-Emitter Voltage: 600 V

The high maximum collector-emitter voltage rating allows the IGBT to handle high-power applications and voltages.

Transistor Element Material: SILICON

Silicon is a commonly used semiconductor material known for its efficiency and reliability in electronic components like IGBTs.

Maximum Collector Current (IC): 60 A

With a high collector current rating, this IGBT can handle heavy loads and high-power requirements without overheating or damage.

Terminal Position: SINGLE

Having a single terminal position simplifies the connection process and ensures proper orientation during installation.

Case Connection: COLLECTOR

The case connection at the collector makes it easier to integrate the IGBT into circuits and ensures proper current flow and heat dissipation.

Nominal Turn On Time (ton): 51.1 ns

The fast turn-on time of the IGBT allows for quick response and switching, making it ideal for power control applications requiring rapid adjustments.

Technical Specifications

Insulated Gate Bipolar Transistors (IGBT) STGB30H60DFB attributes and parameters. Explore more Insulated Gate Bipolar Transistors (IGBT) devices from STMicroelectronics

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

600 V

JEDEC-95 Code:

TO-263AB

JESD-30 Code:

R-PSSO-G2

No. of Elements:

1

No. of Terminals:

2

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

NOT SPECIFIED

Polarity or Channel Type:

Surface Mount:

YES

Terminal Form:

GULL WING

Terminal Position:

SINGLE

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Transistor Application:

POWER CONTROL

Transistor Element Material:

SILICON

Nominal Turn Off Time (toff):

223 ns

Nominal Turn On Time (ton):

51.1 ns

Trade Compliance

STGB30H60DFB Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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