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FS400R07A1E3

Infineon Technologies

FS400R07A1E3 by Infineon Technologies

FS400R07A1E3 by Infineon Technologies is an N-CHANNEL IGBT with a max VCEsat of 1.9V and a max collector current (IC) of 500A. It is used for power control applications and has a package style of FLANGE MOUNT.

Median Price

$416.431

Lifecycle Status

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6

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< 1k

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Nova Conductors

Japan . 100 parts In-Stock

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$366.200

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100

$366.200

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Maritex

Poland . 1 parts In-Stock

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$466.661

100+ parts

$355.688

1k+ parts

$291.664

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1

$466.661

$355.688

$291.664

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Vyrian

USA . 395 parts In-Stock

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395

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Chip Stock

USA . 145 parts In-Stock

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145

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Digiode

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141

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ComSIT Distribution GmbH

Germany . 101 parts In-Stock

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Modulus Dynamics

Lithuania . 19,776 parts In-Stock

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$1.158

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$1.112

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$1.065

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-

19,776

$1.158

$1.112

$1.065

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Advanced Electronics

New Zealand . 20 parts In-Stock

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$1.461

100+ parts

$1.330

1k+ parts

$1.198

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-

20

$1.461

$1.330

$1.198

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Corohmni

South Africa . 47 parts In-Stock

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$1.682

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47

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AZTECH Wire

Italy . 653 parts In-Stock

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$14.111

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653

$14.111

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Andel Nordic

Denmark . 136 parts In-Stock

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$39.200

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$27.442

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$27.442

136

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$27.442

$27.442

Ampacity Inc.

Singapore . 248 parts In-Stock

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$61.050

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248

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Semicontronic

India . 1,635 parts In-Stock

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$64.050

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$62.449

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$62.128

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1,635

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Continental Prestige Electronics

USA . 3,275 parts In-Stock

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$366.200

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$358.876

3,275

$366.200

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$358.876

Netroflash

USA . 2,000 parts In-Stock

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$366.200

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$358.876

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2,000

$366.200

$358.876

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Argo Parts USA

USA . 35 parts In-Stock

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$366.200

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$362.538

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$358.876

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$355.214

35

$366.200

$362.538

$358.876

$355.214

Microchip USA

USA . 246 parts In-Stock

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$443.865

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246

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A-Z Elektronik GmbH

Germany . 5,483 parts In-Stock

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5,483

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Alle Elektronik GmbH

Germany . 3,655 parts In-Stock

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3,655

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GreenTree Electronics

Israel . 1,057 parts In-Stock

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1,057

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Corphita

USA . 896 parts In-Stock

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Perfect Parts

USA . 1 parts In-Stock

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Overview

Discover the power and reliability of the FS400R07A1E3 by Infineon Technologies, a leading manufacturer in the industry. As part of the Insulated Gate Bipolar Transistors (IGBT) category, this N-CHANNEL transistor offers outstanding performance for power control applications. With its built-in diode and thermistor, it provides seamless functionality and enhanced efficiency. Experience the value and benefits of this product, from its low VCEsat of 1.9V to its maximum collector current of 500A. Whether you need precision control or high-power demands, the FS400R07A1E3 delivers exceptional quality and performance you can rely on.

Feature Benefit Bullets

Polarity or Channel Type:

N-CHANNEL - This IGBT design allows for efficient power control and performance.

Configuration:

BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR - The built-in diode and thermistor enhance the functionality and reliability of this IGBT.

Transistor Application:

POWER CONTROL - Designed specifically for power control applications, ensuring optimal performance.

Maximum VCEsat:

1.9 V - The low maximum VCEsat value allows for reduced power loss and improved efficiency.

Package Shape:

RECTANGULAR - The rectangular package shape offers convenient and space-saving installation options.

No. of Elements:

6 - With six elements, this IGBT provides enhanced power handling capabilities.

Nominal Turn Off Time (toff):

580 ns - The quick turn-off time ensures precise control and minimizes power wastage.

No. of Terminals:

23 - The high number of terminals enables versatile connectivity options.

Maximum Power Dissipation (Abs):

1250 W - The high maximum power dissipation allows for handling significant power loads.

Package Style (Meter):

FLANGE MOUNT - The flange mount package style provides secure and efficient mounting options.

Maximum Operating Temperature:

150 °C - With a high maximum operating temperature, this IGBT can withstand demanding environments.

Maximum Collector-Emitter Voltage:

650 V - The high maximum collector-emitter voltage ensures compatibility with various power systems.

Transistor Element Material:

SILICON - Utilizing silicon as the transistor element material guarantees durability and reliability.

Maximum Gate-Emitter Voltage:

20 V - The high maximum gate-emitter voltage allows for effective control and responsiveness.

Minimum Operating Temperature:

40 °C - The low minimum operating temperature ensures reliable operation in extreme conditions.

Maximum Collector Current (IC):

500 A - With a high maximum collector current, this IGBT can handle heavy electrical loads.

Maximum Gate-Emitter Threshold Voltage:

6.5 V - The high maximum gate-emitter threshold voltage provides consistent and precise control.

Terminal Position:

UPPER - The upper terminal position facilitates convenient and organized wiring.

Moisture Sensitivity Level (MSL):

1 - With a low moisture sensitivity level, this IGBT is resistant to moisture-related issues.

Case Connection:

ISOLATED - The isolated case connection ensures safe and reliable operation.

Peak Reflow Temperature °C:

260 - The high peak reflow temperature allows for efficient soldering during the manufacturing process.

Nominal Turn On Time (ton):

200 ns - The quick turn-on time enables rapid switching and optimal power control.

Technical Specifications

Insulated Gate Bipolar Transistors (IGBT) FS400R07A1E3 attributes and parameters. Explore more Insulated Gate Bipolar Transistors (IGBT) devices from Infineon Technologies

Specs

Case Connection:

ISOLATED

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

650 V

Maximum Gate-Emitter Threshold Voltage:

6.5 V

Maximum Gate-Emitter Voltage:

20 V

JESD-30 Code:

R-XUFM-X23

Moisture Sensitivity Level (MSL):

1

No. of Elements:

6

No. of Terminals:

23

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

UNSPECIFIED

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Insulated Gate BIP Transistors

Surface Mount:

NO

Terminal Form:

UNSPECIFIED

Terminal Position:

UPPER

Transistor Application:

POWER CONTROL

Transistor Element Material:

SILICON

Nominal Turn Off Time (toff):

580 ns

Nominal Turn On Time (ton):

200 ns

Maximum VCEsat:

1.9 V

Trade Compliance

FS400R07A1E3 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Infineon Technologies

Infineon Technologies AG is a leading global semiconductor manufacturer and provider of comprehensive solutions for automotive, industrial, and consumer applications. Founded in 1999, the company has grown to become one of the largest semiconductor manufacturers in Europe. Infineon is headquartered in Neubiberg, Germany with operations across countries in Europe and Asia Pacific. Infineon provides microelectronics products that address many of today's societal challenges affecting energy efficiency, mobility, security and connectivity. Over the past two decades Infineon has become a major player in the semiconductor industry with an impressive portfolio of innovative technologies. As one of only four companies that produce DRAM chips for automobiles, Infineon produces cutting-edge processors for use in advanced driver assistance systems (ADAS). Likewise, they specialize in providing advanced embedded secure microcontrollers that are essential for connected devices. Furthermore, they offer integrated circuit solutions for industrial power control such as motor controllers and embedded gate drivers.

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Management team

CEO

Jochen Hanebeck

Chief Financial Officer

Sven Schneider

Chief Marketing Officer

Andreas Urschitz

Manufacturer fab locations 19

Fab name Location Fab Initiation Wafer Capacity

Villach 300mm

Fabrication

Fab Initiation

2011

Austria

Villach

Wafer Capacity

11,000

2011

11,000

Kulim 2

Fabrication

Fab Initiation

2016

Malaysia

Kulim

Wafer Capacity

79,500

2016

79,500

Dresden - Module 3

Fabrication

Fab Initiation

1999

Germany

Dresden

Wafer Capacity

58,000

1999

58,000

Villach Building

Fabrication

Fab Initiation

2016

Austria

Villach

Wafer Capacity

2,000

2016

2,000

Regensburg

Fabrication

Fab Initiation

1986

Germany

Regensburg

Wafer Capacity

60,000

1986

60,000

Dresden 200 - Module 1

Fabrication

Fab Initiation

1995

Germany

Dresden

Wafer Capacity

28,000

1995

28,000

Dresden 200 - Module 2

Fabrication

Fab Initiation

1996

Germany

Dresden

Wafer Capacity

28,000

1996

28,000

Building 38

Fabrication

Fab Initiation

2005

Germany

Dresden

Wafer Capacity

500

2005

500

Building 47

Fabrication

Fab Initiation

2005

Germany

Dresden

Wafer Capacity

500

2005

500

Kulim 1

Fabrication

Fab Initiation

2006

Malaysia

Kulim

Wafer Capacity

110,000

2006

110,000

Mesa Facility

Fabrication

Fab Initiation

1990

USA

Mesa

Wafer Capacity

3,000

1990

3,000

Villach 150mm

Fabrication

Fab Initiation

1981

Austria

Villach

Wafer Capacity

35,000

1981

35,000

Villach 200mm

Fabrication

Fab Initiation

1995

Austria

Villach

Wafer Capacity

68,000

1995

68,000

Temecula

Fabrication

Fab Initiation

1995

USA

Temecula

Wafer Capacity

30,000

1995

30,000

Villach 300mm

Fabrication

Fab Initiation

2021

Austria

Villach

Wafer Capacity

2021

Villach 150mm

Fabrication

Fab Initiation

2018

Austria

Villach

Wafer Capacity

5,000

2018

5,000

Kulim 3

Fabrication

Fab Initiation

2024

Malaysia

Kulim

Wafer Capacity

2024

Fab 25

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

31,000

1995

31,000

Dresden - Module 4

Fabrication

Fab Initiation

2026

Germany

Dresden

Wafer Capacity

2026

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