Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
Discover essential electronic components for your devices, including CPU accelerators, system cache controllers, computer processors, motherboards, and graphics computing systems. Enhance device performance and connectivity with reliable components engineered for seamless integration and optimal functionality.
Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
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FS400R07A1E3 by Infineon Technologies is an N-CHANNEL IGBT with a max VCEsat of 1.9V and a max collector current (IC) of 500A. It is used for power control applications and has a package style of FLANGE MOUNT.
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Perfect Parts
N-CHANNEL - This IGBT design allows for efficient power control and performance.
BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR - The built-in diode and thermistor enhance the functionality and reliability of this IGBT.
POWER CONTROL - Designed specifically for power control applications, ensuring optimal performance.
1.9 V - The low maximum VCEsat value allows for reduced power loss and improved efficiency.
RECTANGULAR - The rectangular package shape offers convenient and space-saving installation options.
6 - With six elements, this IGBT provides enhanced power handling capabilities.
580 ns - The quick turn-off time ensures precise control and minimizes power wastage.
23 - The high number of terminals enables versatile connectivity options.
1250 W - The high maximum power dissipation allows for handling significant power loads.
FLANGE MOUNT - The flange mount package style provides secure and efficient mounting options.
150 °C - With a high maximum operating temperature, this IGBT can withstand demanding environments.
650 V - The high maximum collector-emitter voltage ensures compatibility with various power systems.
SILICON - Utilizing silicon as the transistor element material guarantees durability and reliability.
20 V - The high maximum gate-emitter voltage allows for effective control and responsiveness.
40 °C - The low minimum operating temperature ensures reliable operation in extreme conditions.
500 A - With a high maximum collector current, this IGBT can handle heavy electrical loads.
6.5 V - The high maximum gate-emitter threshold voltage provides consistent and precise control.
UPPER - The upper terminal position facilitates convenient and organized wiring.
1 - With a low moisture sensitivity level, this IGBT is resistant to moisture-related issues.
ISOLATED - The isolated case connection ensures safe and reliable operation.
260 - The high peak reflow temperature allows for efficient soldering during the manufacturing process.
200 ns - The quick turn-on time enables rapid switching and optimal power control.
Insulated Gate Bipolar Transistors (IGBT) FS400R07A1E3 attributes and parameters. Explore more Insulated Gate Bipolar Transistors (IGBT) devices from Infineon Technologies
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FS400R07A1E3 Transistors trade compliance attributes, and parameters.
ECCN
EAR99
ECCN Governance
EAR
Infineon Technologies AG is a leading global semiconductor manufacturer and provider of comprehensive solutions for automotive, industrial, and consumer applications. Founded in 1999, the company has grown to become one of the largest semiconductor manufacturers in Europe. Infineon is headquartered in Neubiberg, Germany with operations across countries in Europe and Asia Pacific. Infineon provides microelectronics products that address many of today's societal challenges affecting energy efficiency, mobility, security and connectivity. Over the past two decades Infineon has become a major player in the semiconductor industry with an impressive portfolio of innovative technologies. As one of only four companies that produce DRAM chips for automobiles, Infineon produces cutting-edge processors for use in advanced driver assistance systems (ADAS). Likewise, they specialize in providing advanced embedded secure microcontrollers that are essential for connected devices. Furthermore, they offer integrated circuit solutions for industrial power control such as motor controllers and embedded gate drivers.
CEO
Jochen Hanebeck
Chief Financial Officer
Sven Schneider
Chief Marketing Officer
Andreas Urschitz
Villach 300mm
Fabrication
Fab Initiation
2011
Austria
Villach
Wafer Capacity
11,000
Kulim 2
2016
Malaysia
Kulim
79,500
Dresden - Module 3
1999
Germany
Dresden
58,000
Villach Building
2,000
Regensburg
1986
60,000
Dresden 200 - Module 1
1995
28,000
Dresden 200 - Module 2
1996
Building 38
2005
500
Building 47
Kulim 1
2006
110,000
Mesa Facility
1990
USA
Mesa
3,000
Villach 150mm
1981
35,000
Villach 200mm
68,000
Temecula
30,000
2021
2018
5,000
Kulim 3
2024
Fab 25
Austin
31,000
Dresden - Module 4
2026
1N4148WS
Surge Components
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: FLAT; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
1N4148
Central Semiconductor
RECTIFIER DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;
BSS138
Vishay Semiconductors
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Package Style (Meter): SMALL OUTLINE; Package Shape: RECTANGULAR; Transistor Application: SWITCHING;
Nexperia
STM32H750VBT6
STMicroelectronics
STM32H750VBT6 by STMicroelectronics is a 32-bit microcontroller with Cortex-M7 CPU, offering 20 timers and 16 DMA channels. It features 2 DAC and 16 ADC channels, suitable for industrial applications requiring high-speed processing up to 48 MHz. With extensive connectivity options like FDCAN, Ethernet, and USB, it provides versatile solutions in a compact package.
1N4148W-T
Micro Commercial Components
1N4148W-T by Micro Commercial Components is a single rectifier diode with a max reverse recovery time of 0.004 us. It operates b/w -55 to 150 °C and has a max output current of 0.15 A. Ideal for applications requiring fast switching speeds in small outline packages.
SMBJ18CA
Yangzhou Yangjie Electronics
TRANS VOLTAGE SUPPRESSOR DIODE; Surface Mount: YES; Maximum Clamping Voltage: 29.2 V; Nominal Breakdown Voltage: 21.05 V; Maximum Repetitive Peak Reverse Voltage: 18 V; Polarity: BIDIRECTIONAL;
LM317T
ADJUSTABLE POSITIVE SINGLE OUTPUT STANDARD REGULATOR; No. of Terminals: 3; Terminal Form: THROUGH-HOLE; Moisture Sensitivity Level (MSL): 1; Maximum Output Current-1: 1.5 A; Operating Temperature (TJ-Min): 0 Cel;
BAV99
Panasonic
MIXER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;
ULN2803ADWG4
Texas Instruments
ULN2803ADWG4 by Texas Instruments is a peripheral driver with 8 functions, open-collector output characteristics, and built-in transient protections. It operates at temperatures ranging from -40 to 85°C and has a max supply voltage of 3V. Ideal for applications requiring sink current flow direction in a small outline package style.
1N4148WS-7-F
Diodes Incorporated
1N4148WS-7-F by Diodes Inc. is a single rectifier diode with max reverse recovery time of 0.004 us and max reverse current of 1 uA. It operates b/w -65 to 150 °C, ideal for applications requiring small outline surface mount diodes with a max output current of 0.15 A.
ULN2803A
YOUTAI SEMICONDUCTOR CO LTD
BUFFER OR INVERTER BASED PERIPHERAL DRIVER; Terminal Form: GULL WING; No. of Terminals: 18; Package Code: SOP; Package Shape: RECTANGULAR; JESD-30 Code: R-PDSO-G18;
2N7002DWH6327XTSA1
Infineon Technologies
2N7002DWH6327XTSA1 by Infineon: N-CHANNEL FET with 60V DS Breakdown Voltage, 0.3A ID, and 3ohm RDS. Ideal for SWITCHING applications in small outline packages with GULL WING terminals.
LM358D-T
Philips Semiconductors
OPERATIONAL AMPLIFIER; Temperature Grade: COMMERCIAL; Terminal Form: GULL WING; No. of Terminals: 8; Package Code: SOP; Package Shape: RECTANGULAR;
BAT54C-7-F
BAT54C-7-F by Diodes Inc. is a Schottky rectifier diode with common cathode, 2 elements, and max forward voltage of 0.24V. Ideal for applications requiring fast reverse recovery time of 0.005 us, such as in small outline packages for surface mount technology at temperatures ranging from -65 to 150°C.
Transys Electronics
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;
Silicon Standard
TRANS VOLTAGE SUPPRESSOR DIODE; Terminal Position: DUAL; Terminal Form: C BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
2N2222A
Semitronics
NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .8 A;
Sinyork
RECTIFIER DIODE; Surface Mount: YES; Maximum Forward Voltage (VF): 1 V; No. of Elements: 1; Maximum Output Current: .2 A; Config: SINGLE;
LL4148
Formosa Microsemi
RECTIFIER DIODE; Terminal Position: END; Terminal Form: WRAP AROUND; No. of Terminals: 2; Surface Mount: YES; Package Shape: ROUND;
IXXX300N60B3
Littelfuse
The Littelfuse IXXX300N60B3 is an N-CHANNEL IGBT with 600V VCEsat, 550A IC, and 2300W power dissipation. Ideal for power control applications, it has a turn-off time of 430ns and operates b/w -55°C to 175°C.
IXYN100N120C3H1
IXYN100N120C3H1 by Littelfuse is an N-CHANNEL IGBT with 1200V max collector-emitter voltage, 134A max collector current, and 690W max power dissipation. Ideal for power control applications due to its single configuration with built-in diode and fast turn-off time of 265ns.
FF300R12ME4PB11BPSA1
FF300R12ME4PB11BPSA1 by Infineon Technologies is an N-CHANNEL IGBT with 2 SERIES CONNECTED elements. It has a Max VCEsat of 2.1V and Nominal Turn Off Time of 720ns, making it ideal for POWER CONTROL applications. With a Max Collector-Emitter Voltage of 1200V and operating temperature range from -40 to 150 °C, this RECTANGULAR package transistor offers efficient performance in various power control systems.
IRG4PC50FDPBF
IRG4PC50FDPBF by Infineon Technologies is an N-CHANNEL IGBT transistor with a max collector-emitter voltage of 600V and a max power dissipation of 200W. It has a single configuration with built-in diode, suitable for power control applications. With a nominal turn-off time of 660ns and max fall time of 210ns, it offers efficient switching performance in high-power systems.
FGH60N60SFTU
Fairchild Semiconductor
N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 378 W; Maximum Collector Current (IC): 120 A; No. of Terminals: 3;
FF1000R17IE4DB2BOSA1
Infineon's FF1000R17IE4DB2BOSA1 IGBT features N-CHANNEL configuration with 2 elements, built-in diode, and thermistor. Ideal for power control applications with max VCEsat of 2.45V and max IC of 1390A. Operates in temp range -40 to 150°C, offering high power dissipation up to 6250W.
STGY50NC60WD
STGY50NC60WD by STMicroelectronics is an N-CHANNEL IGBT with a max collector-emitter voltage of 600V and a max gate-emitter voltage of 20V. It is used for power control applications, with a nominal turn off time of 271ns and a max power dissipation of 260W.
IXGN100N170
IXYS Corporation
N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 735 W; Maximum Collector Current (IC): 160 A; Transistor Element Material: SILICON;
V23990-K230-F40-/1A/-PM
Vincotech
Vincotech V23990-K230-F40-/1A/-PM is a N-CHANNEL IGBT bridge with 6 elements, built-in diode, and thermistor. Ideal for power control applications with max VCEsat of 2.2V, IC of 88A, and Pmax of 246W. Operates up to 175°C with VCE(max) at 1200V making it suitable for high-power systems.
FS50R06W1E3B11BOMA1
Infineon FS50R06W1E3B11BOMA1 is a N-CHANNEL IGBT with 600V VCE, 70A IC, and 370ns toff. Ideal for POWER CONTROL applications due to its fast switching times and high current handling capabilities in a RECTANGULAR package.
FGAF40N60UFTU
N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 100 W; Maximum Collector Current (IC): 40 A; Case Connection: ISOLATED;
MMIX4B22N300
MMIX4B22N300 by IXYS Corporation is an N-CHANNEL IGBT with a max VCEsat of 2.7V and a max collector-emitter voltage of 3000V. It is used for power control applications and has a small outline package style, making it suitable for surface mount installations.
FP10R12W1T4B11BOMA1
Infineon's FP10R12W1T4B11BOMA1 IGBT features 1200V max collector-emitter voltage, 20A max collector current, and 500ns nominal turn-off time. Ideal for power control applications due to N-channel polarity, complex configuration, and silicon transistor element material.
IXDN55N120D1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 450 W; Maximum Collector Current (IC): 100 A; Terminal Form: UNSPECIFIED;
HGTP10N120BN
N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 298 W; Maximum Collector Current (IC): 35 A; Transistor Application: MOTOR CONTROL;
STGWA50IH65DF
STGWA50IH65DF by STMicroelectronics is an N-CHANNEL IGBT with a max VCEsat of 2V and a max collector-emitter voltage of 650V. It is commonly used in applications requiring high power dissipation, such as industrial motor drives and power supplies.
ISL9V3040D3STV
Onsemi
ISL9V3040D3STV by Onsemi is an N-CHANNEL IGBT with a max VCEsat of 1.65 V and a max IC of 21 A. Ideal for automotive ignition applications, it features a built-in diode and resistor, operates at temperatures ranging from -55 to 175 °C, and has a peak reflow temperature of 260 C.
FGH40N65UFDTU
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 290 W; Maximum Collector Current (IC): 80 A; Package Style (Meter): FLANGE MOUNT;
IXXH30N65B4
N-CHANNEL; Surface Mount: NO; Maximum Power Dissipation (Abs): 230 W; Maximum Collector Current (IC): 65 A; Maximum Collector-Emitter Voltage: 650 V; Maximum Time At Peak Reflow Temperature (s): 10;
FZ250R65KE3NPSA1
Infineon's FZ250R65KE3NPSA1 IGBT offers 6500V VCE, 250A IC, and 4800W power dissipation. Ideal for high-power applications requiring efficient switching at up to 150°C operating temperature.
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FS400R07A1E3S7BOMA1
Infineon FS400R07A1E3S7BOMA1 is a N-CHANNEL IGBT with 6 elements in bridge configuration. Ideal for power control applications, it has VCEsat of 1.7V, IC of 500A, and Pmax of 1250W. Operates b/w -40 to 150°C with ton at 220ns and toff at 540ns.
FS400R07A1E3_H5
N-CHANNEL; Configuration: COMPLEX; Surface Mount: NO; Maximum Power Dissipation (Abs): 750 W; Maximum Collector Current (IC): 500 A; Package Style (Meter): FLANGE MOUNT;
FS400R07A3E3H6BPSA1
Infineon Technologies' FS400R07A3E3H6BPSA1 is an N-Channel IGBT with a max VCEsat of 6.5V, nominal toff of 430ns, and max power dissipation of 811W. It is commonly used in applications requiring high collector-emitter voltage (705V) and current (5001A), such as power electronics and motor drives.
FS400R07A3E3BOMA1
N-CHANNEL; Configuration: BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE AND NTC; Surface Mount: NO; Maximum Power Dissipation (Abs): 1250 W; Maximum Collector Current (IC): 500 A; Terminal Position: UPPER;
FS400R06A1E3
N-CHANNEL; Configuration: BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR; Surface Mount: NO; Maximum Power Dissipation (Abs): 1250 W; Maximum Collector Current (IC): 500 A; JESD-30 Code: R-XUFM-X13;
FS400R06A1E3_B98
Insulated Gate Bipolar Transistors;
FS400R07A1E3BOMA1
N-CHANNEL; Configuration: BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR; Surface Mount: NO; Maximum Power Dissipation (Abs): 1250 W; Maximum Collector Current (IC): 500 A; No. of Terminals: 23;
FS400R07A1E3BOSA1
N-CHANNEL; Configuration: BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR; Surface Mount: NO; Maximum Collector Current (IC): 500 A; Package Shape: RECTANGULAR; Moisture Sensitivity Level (MSL): 1;
FS400R07A1E3H5BPSA1
N-Channel; Maximum Power Dissipation (Abs): 750 W; Maximum Collector Current (IC): 500 A; Transistor Element Material: SILICON; Minimum Operating Temperature: -40 Cel; Nominal Turn Off Time (toff): 580 ns;
FS400R07A1E3_S6
N-Channel; Maximum Power Dissipation (Abs): 1250 W; Maximum Collector Current (IC): 500 A; Maximum Gate-Emitter Threshold Voltage: 6.5 V; Nominal Turn On Time (ton): 220 ns; Maximum VCEsat: 6.5 V;
FS400R07A1E3_S7
N-CHANNEL; Configuration: BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR; Surface Mount: NO; Maximum Power Dissipation (Abs): 1250 W; Maximum Collector Current (IC): 500 A; Maximum Operating Temperature: 150 Cel;
FS400R07A3E3
N-CHANNEL; Configuration: BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE AND NTC; Surface Mount: NO; Maximum Power Dissipation (Abs): 1250 W; Maximum Collector Current (IC): 500 A; Terminal Form: UNSPECIFIED;
FS400R07A3E3_H6
N-CHANNEL; Configuration: BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR; Surface Mount: NO; Maximum Power Dissipation (Abs): 811 W; Maximum Collector Current (IC): 500 A; No. of Elements: 6;
FS400R12A2T4
N-CHANNEL; Configuration: 3 BANKS, SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR; Surface Mount: NO; Maximum Collector Current (IC): 400 A; Maximum Collector-Emitter Voltage: 1200 V; Terminal Position: UPPER;
FS400R12A2T4BOSA1
Insulated Gate Bipolar Transistors; Maximum Power Dissipation (Abs): 1500 W; Maximum Collector Current (IC): 400 A; Maximum VCEsat: 1.85 V; Maximum Gate-Emitter Voltage: 20 V; Maximum Collector-Emitter Voltage: 1200 V;
FS400R12KF4
N-CHANNEL; Configuration: BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 2500 W; Maximum Collector Current (IC): 400 A; Case Connection: ISOLATED;
FS400R12KF4NOSA1
N-CHANNEL; Configuration: BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Collector Current (IC): 400 A; Package Shape: RECTANGULAR; Terminal Form: UNSPECIFIED;
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