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APT35GT120JU2

Microsemi

APT35GT120JU2 by Microsemi

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 260 W; Maximum Collector Current (IC): 55 A; Package Style (Meter): FLANGE MOUNT;

Median Price

$18.422

Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

< 1k

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Bristol Electronics

USA . 40 parts In-Stock

1+ parts

$18.422

100+ parts

$17.713

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40

$18.422

$17.713

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Vyrian

USA . 508 parts In-Stock

1+ parts

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508

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Nova Conductors

Japan . 300 parts In-Stock

1+ parts

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300

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Dan-Mar Components

USA . 40 parts In-Stock

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40

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Aztec Data Supply Inc.

USA . 2,728 parts In-Stock

1+ parts

$0.756

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2,728

$0.756

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Advanced Electronics

New Zealand . 350 parts In-Stock

1+ parts

$1.330

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$1.210

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$1.091

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350

$1.330

$1.210

$1.091

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Corohmni

South Africa . 489 parts In-Stock

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$1.699

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489

$1.699

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AZTECH Wire

Italy . 493 parts In-Stock

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$19.791

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493

$19.791

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Semicontronic

India . 157 parts In-Stock

1+ parts

$48.050

100+ parts

$46.849

1k+ parts

$46.608

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157

$48.050

$46.849

$46.608

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Microchip USA

USA . 9,905 parts In-Stock

1+ parts

$56.304

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9,905

$56.304

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Continental Prestige Electronics

USA . 3,466 parts In-Stock

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Glotronic Ltd.

UK . 3,300 parts In-Stock

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West Coast Incorporated

USA . 1,440 parts In-Stock

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1,440

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Argo Parts USA

USA . 259 parts In-Stock

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Bastille Electronics

Australia . 200 parts In-Stock

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200

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Technical Specifications

Insulated Gate Bipolar Transistors (IGBT) APT35GT120JU2 attributes and parameters. Explore more Insulated Gate Bipolar Transistors (IGBT) devices from Microsemi

Specs

Additional Features:

AVALANCHE RATED, LOW CONDUCTION LOSS

Case Connection:

ISOLATED

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

1200 V

Maximum Gate-Emitter Voltage:

20 V

JESD-30 Code:

R-XUFM-X4

No. of Elements:

1

No. of Terminals:

4

Maximum Operating Temperature:

150 Cel

Package Body Material:

UNSPECIFIED

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Peak Reflow Temperature (C):

NOT SPECIFIED

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Insulated Gate BIP Transistors

Surface Mount:

NO

Terminal Form:

UNSPECIFIED

Terminal Position:

UPPER

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Transistor Application:

POWER CONTROL

Transistor Element Material:

SILICON

Nominal Turn Off Time (toff):

610 ns

Nominal Turn On Time (ton):

135 ns

Maximum VCEsat:

2.1 V

Trade Compliance

APT35GT120JU2 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Microsemi

Microsemi Corporation, a wholly owned subsidiary of Microchip Technology Inc. (Nasdaq: MCHP), offers a comprehensive portfolio of semiconductor and system solutions for communications, defense & security, aerospace and industrial markets. Products include high-performance and radiation-hardened analog mixed-signal integrated circuits, FPGAs, SoCs and ASICs; power management products; timing and synchronization devices and precise time solutions, setting the world's standard for time; voice processing devices; RF solutions; discrete components; enterprise storage and communication solutions, security technologies and scalable anti-tamper products; Ethernet solutions; Power-over-Ethernet ICs and midspans; as well as custom design capabilities and services. Microsemi is headquartered in Aliso Viejo, California.

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