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STGD5NB120SZT4

STMicroelectronics

STGD5NB120SZT4 by STMicroelectronics

STGD5NB120SZT4 by STMicroelectronics is an N-CHANNEL IGBT with 1200V max collector-emitter voltage, 10A max collector current, and 55W max power dissipation. Ideal for power control applications due to its single configuration with built-in diode and resistor. It comes in a small outline package shape suitable for surface mount assembly.

Median Price

$1.292

Lifecycle Status

Suppliers In-Stock

14

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Mouser Electronics

USA . 178 parts In-Stock

1+ parts

$2.370

100+ parts

$1.040

1k+ parts

$0.827

10k+ parts

$0.757

178

$2.370

$1.040

$0.827

$0.757

Avnet

USA . 5,000 parts In-Stock

1+ parts

-

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5,000

-

-

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Arrow

USA . 2,500 parts In-Stock

1+ parts

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$0.689

2,500

-

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-

$0.689

Verical

USA . 2,500 parts In-Stock

1+ parts

-

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$0.689

2,500

-

-

-

$0.689

RS (Exports)

UK . 1,295 parts In-Stock

1+ parts

-

100+ parts

$1.894

1k+ parts

$1.618

10k+ parts

-

1,295

-

$1.894

$1.618

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Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Nova Conductors

Japan . 100 parts In-Stock

1+ parts

$1.078

100+ parts

-

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100

$1.078

-

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Digiode

USA . 4,961 parts In-Stock

1+ parts

$1.948

100+ parts

-

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4,961

$1.948

-

-

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TME

Poland . 185 parts In-Stock

1+ parts

$2.230

100+ parts

$1.030

1k+ parts

$0.980

10k+ parts

-

185

$2.230

$1.030

$0.980

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Rutronik

Germany . 10,000 parts In-Stock

1+ parts

-

100+ parts

-

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$0.684

10,000

-

-

-

$0.684

Vyrian

USA . 4,162 parts In-Stock

1+ parts

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4,162

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Chip Stock

USA . 2,795 parts In-Stock

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2,795

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ComSIT Distribution GmbH

Germany . 1,875 parts In-Stock

1+ parts

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1,875

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Bristol Electronics

USA . 1,092 parts In-Stock

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-

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1,092

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Anansix

USA . 872 parts In-Stock

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872

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Distributors (Availability)

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Advanced Electronics

New Zealand . 600 parts In-Stock

1+ parts

$0.432

100+ parts

$0.410

1k+ parts

$0.410

10k+ parts

-

600

$0.432

$0.410

$0.410

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Ampacity Inc.

Singapore . 4,717 parts In-Stock

1+ parts

$0.610

100+ parts

-

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4,717

$0.610

-

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Corohmni

South Africa . 7 parts In-Stock

1+ parts

$0.679

100+ parts

-

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7

$0.679

-

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IDEA Electronic Components Group

UK . 761 parts In-Stock

1+ parts

$0.965

100+ parts

-

1k+ parts

$0.869

10k+ parts

-

761

$0.965

-

$0.869

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Argo Parts USA

USA . 4,306 parts In-Stock

1+ parts

$1.078

100+ parts

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4,306

$1.078

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Continental Prestige Electronics

USA . 894 parts In-Stock

1+ parts

$1.078

100+ parts

-

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10k+ parts

$1.056

894

$1.078

-

-

$1.056

Netroflash

USA . 100 parts In-Stock

1+ parts

$1.078

100+ parts

-

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$1.024

10k+ parts

$1.002

100

$1.078

-

$1.024

$1.002

Aztec Data Supply Inc.

USA . 495 parts In-Stock

1+ parts

$1.200

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-

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495

$1.200

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Semicontronic

India . 4,811 parts In-Stock

1+ parts

$1.330

100+ parts

$1.297

1k+ parts

$1.290

10k+ parts

-

4,811

$1.330

$1.297

$1.290

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MKK Technologies

India . 89 parts In-Stock

1+ parts

$1.815

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89

$1.815

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DigiPath Technology Company

USA . 89 parts In-Stock

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$1.815

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89

$1.815

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Corphita

USA . 3,239 parts In-Stock

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$1.845

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3,239

$1.845

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Microchip USA

USA . 8,996 parts In-Stock

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$6.838

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8,996

$6.838

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Perfect Parts

USA . 117,275 parts In-Stock

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Futuretech Components

Singapore . 20,000 parts In-Stock

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Lixinc

USA . 11,232 parts In-Stock

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Kepictronics

USA . 2,500 parts In-Stock

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2,500

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Authorized Procurement Solutions

USA . 2,500 parts In-Stock

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2,500

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ChipTracer

USA . 1,092 parts In-Stock

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1,092

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Parana Technologies

USA . 372 parts In-Stock

1+ parts

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100+ parts

$1.154

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372

-

$1.154

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Overview

Unlock the power of efficient energy management with the STGD5NB120SZT4 by STMicroelectronics. This Insulated Gate Bipolar Transistor (IGBT) offers a single configuration with a built-in diode and resistor, making it ideal for power control applications. With a maximum collector-emitter voltage of 1200V and a maximum gate-emitter voltage of 20V, this transistor provides reliable performance even in high operating temperatures up to 150°C. Trust in the quality and expertise of STMicroelectronics to deliver cutting-edge technology that enhances your projects and maximizes energy efficiency.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides insulation and protects the internal components, increasing durability and reliability.

Polarity or Channel Type: N-CHANNEL

Allows for efficient power control with low forward voltage drop.

Configuration: SINGLE WITH BUILT-IN DIODE AND RESISTOR

Simplifies circuit design and saves space by integrating components in a single package.

Transistor Application: POWER CONTROL

Specifically designed for power control applications, ensuring optimal performance.

Maximum Operating Temperature: 150 °C

Can operate at high temperatures without performance degradation, suitable for a variety of environments.

Technical Specifications

Insulated Gate Bipolar Transistors (IGBT) STGD5NB120SZT4 attributes and parameters. Explore more Insulated Gate Bipolar Transistors (IGBT) devices from STMicroelectronics

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

1200 V

Maximum Gate-Emitter Threshold Voltage:

5 V

Maximum Gate-Emitter Voltage:

20 V

JEDEC-95 Code:

TO-252AA

JESD-30 Code:

R-PSSO-G2

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Insulated Gate BIP Transistors

Surface Mount:

YES

Terminal Finish:

Matte Tin (Sn) - annealed

Terminal Form:

GULL WING

Terminal Position:

SINGLE

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

POWER CONTROL

Transistor Element Material:

SILICON

Nominal Turn Off Time (toff):

14100 ns

Nominal Turn On Time (ton):

850 ns

Trade Compliance

STGD5NB120SZT4 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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