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STGD10NC60KDT4

STMicroelectronics

STGD10NC60KDT4 by STMicroelectronics

STGD10NC60KDT4 by STMicroelectronics is an N-CHANNEL IGBT with 600V max collector-emitter voltage, 20A max collector current, and 60W max power dissipation. Ideal for power control applications due to its fast turn-off time of 242ns and built-in diode configuration. It comes in a small outline package with gull wing terminals for surface mount assembly.

Median Price

$2.115

Lifecycle Status

Suppliers In-Stock

9

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Mouser Electronics

USA . 1,188 parts In-Stock

1+ parts

$2.060

100+ parts

$0.888

1k+ parts

$0.667

10k+ parts

$0.541

1,188

$2.060

$0.888

$0.667

$0.541

DigiKey

USA . 3,687 parts In-Stock

1+ parts

$2.170

100+ parts

$0.943

1k+ parts

$0.720

10k+ parts

$0.588

3,687

$2.170

$0.943

$0.720

$0.588

Avnet

USA . 5,000 parts In-Stock

1+ parts

-

100+ parts

-

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5,000

-

-

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Digiode

USA . 1,522 parts In-Stock

1+ parts

$1.729

100+ parts

-

1k+ parts

-

10k+ parts

-

1,522

$1.729

-

-

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Vyrian

USA . 3,533 parts In-Stock

1+ parts

$1.820

100+ parts

-

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-

10k+ parts

-

3,533

$1.820

-

-

-

TME

Poland . 1,843 parts In-Stock

1+ parts

$1.890

100+ parts

$1.030

1k+ parts

-

10k+ parts

-

1,843

$1.890

$1.030

-

-

Chip Stock

USA . 7,472 parts In-Stock

1+ parts

-

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7,472

-

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Anansix

USA . 1,067 parts In-Stock

1+ parts

-

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1,067

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Nova Conductors

Japan . 50 parts In-Stock

1+ parts

-

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50

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Component Stockers USA

USA . 19,183 parts In-Stock

1+ parts

$1.320

100+ parts

$0.980

1k+ parts

$0.710

10k+ parts

-

19,183

$1.320

$0.980

$0.710

-

Corohmni

South Africa . 594 parts In-Stock

1+ parts

$1.435

100+ parts

-

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594

$1.435

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Corphita

USA . 2,600 parts In-Stock

1+ parts

$1.638

100+ parts

-

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10k+ parts

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2,600

$1.638

-

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IDEA Electronic Components Group

UK . 2,274 parts In-Stock

1+ parts

$1.703

100+ parts

-

1k+ parts

$1.533

10k+ parts

-

2,274

$1.703

-

$1.533

-

MKK Technologies

India . 2,163 parts In-Stock

1+ parts

$3.202

100+ parts

-

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10k+ parts

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2,163

$3.202

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DigiPath Technology Company

USA . 2,163 parts In-Stock

1+ parts

$3.202

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2,163

$3.202

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Ampacity Inc.

Singapore . 8,758 parts In-Stock

1+ parts

$3.370

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8,758

$3.370

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Microchip USA

USA . 7,010 parts In-Stock

1+ parts

$4.971

100+ parts

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7,010

$4.971

-

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RC Electronics

USA . 28,395 parts In-Stock

1+ parts

-

100+ parts

$8.810

1k+ parts

$8.000

10k+ parts

$7.710

28,395

-

$8.810

$8.000

$7.710

Lixinc

USA . 11,187 parts In-Stock

1+ parts

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11,187

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GreenTree Electronics

Israel . 10,000 parts In-Stock

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Eastek

USA . 7,500 parts In-Stock

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A-Z Elektronik GmbH

Germany . 6,014 parts In-Stock

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Argo Parts USA

USA . 5,085 parts In-Stock

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Continental Prestige Electronics

USA . 4,350 parts In-Stock

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4,350

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Kepictronics

USA . 2,910 parts In-Stock

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2,910

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Futuretech Components

Singapore . 2,000 parts In-Stock

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2,000

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Parana Technologies

USA . 94 parts In-Stock

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$2.036

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94

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$2.036

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Assy Fe

Spain . 90 parts In-Stock

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90

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Aranea Global

USA . 50 parts In-Stock

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50

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Overview

Unlock the power of efficient power control with the STGD10NC60KDT4 by STMicroelectronics. This N-CHANNEL IGBT offers unmatched performance and reliability in a compact, easy-to-install package. Ideal for a wide range of applications, this transistor is designed to handle high power dissipation with ease, making it perfect for demanding industrial environments. Trust in STMicroelectronics' reputation for quality and innovation to deliver the value and benefits you need for your next project.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides good insulation and protection for the internal components, ensuring reliable performance and longevity.

Polarity or Channel Type: N-CHANNEL

N-Channel IGBTs typically have lower conduction losses and higher efficiency, making them suitable for power control applications.

Configuration: SINGLE WITH BUILT-IN DIODE

Built-in diode helps prevent damage from reverse currents and enhances the overall robustness of the transistor.

Transistor Application: POWER CONTROL

Specifically designed for power control applications, ensuring efficient and effective control of electricity flow.

Surface Mount: YES

Allows for easy and convenient mounting on circuit boards, saving space and simplifying assembly.

Maximum Operating Temperature: 150 °C

Can operate effectively at high temperatures, suitable for demanding industrial environments.

Maximum Collector-Emitter Voltage: 600 V

Can handle high voltages, making it suitable for high-power applications.

Technical Specifications

Insulated Gate Bipolar Transistors (IGBT) STGD10NC60KDT4 attributes and parameters. Explore more Insulated Gate Bipolar Transistors (IGBT) devices from STMicroelectronics

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

600 V

Maximum Gate-Emitter Threshold Voltage:

7 V

Maximum Gate-Emitter Voltage:

20 V

JESD-30 Code:

R-PSSO-G2

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

NOT SPECIFIED

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Insulated Gate BIP Transistors

Surface Mount:

YES

Terminal Form:

GULL WING

Terminal Position:

SINGLE

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Transistor Application:

POWER CONTROL

Transistor Element Material:

SILICON

Nominal Turn Off Time (toff):

242 ns

Nominal Turn On Time (ton):

23 ns

Trade Compliance

STGD10NC60KDT4 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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