Loading...

F3L75R12W1H3B27BOMA1

Infineon Technologies

F3L75R12W1H3B27BOMA1 by Infineon Technologies

Infineon's F3L75R12W1H3B27BOMA1 IGBT features 1200V max collector-emitter voltage, 45A max collector current, and 385ns nominal turn-off time. Ideal for applications requiring high power switching such as motor drives and renewable energy systems.

Median Price

$49.538

Lifecycle Status

Suppliers In-Stock

7

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

DigiKey

USA . 12 parts In-Stock

1+ parts

$29.920

100+ parts

$19.927

1k+ parts

$18.827

10k+ parts

-

12

$29.920

$19.927

$18.827

-

Chip1Stop

Japan . 24 parts In-Stock

1+ parts

$48.100

100+ parts

-

1k+ parts

-

10k+ parts

-

24

$48.100

-

-

-

Verical

USA . 24 parts In-Stock

1+ parts

$50.975

100+ parts

-

1k+ parts

-

10k+ parts

-

24

$50.975

-

-

-

Newark

USA . 24 parts In-Stock

1+ parts

$56.170

100+ parts

$43.850

1k+ parts

-

10k+ parts

-

24

$56.170

$43.850

-

-

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 940 parts In-Stock

1+ parts

$31.454

100+ parts

-

1k+ parts

-

10k+ parts

-

940

$31.454

-

-

-

Nova Conductors

Japan . 20 parts In-Stock

1+ parts

$60.175

100+ parts

-

1k+ parts

-

10k+ parts

-

20

$60.175

-

-

-

Vyrian

USA . 7,265 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

7,265

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Modulus Dynamics

Lithuania . 21,836 parts In-Stock

1+ parts

$0.752

100+ parts

$0.722

1k+ parts

$0.692

10k+ parts

-

21,836

$0.752

$0.722

$0.692

-

AZTECH Wire

Italy . 326 parts In-Stock

1+ parts

$10.005

100+ parts

-

1k+ parts

-

10k+ parts

-

326

$10.005

-

-

-

Ampacity Inc.

Singapore . 21 parts In-Stock

1+ parts

$28.140

100+ parts

-

1k+ parts

-

10k+ parts

-

21

$28.140

-

-

-

Corphita

USA . 983 parts In-Stock

1+ parts

$29.799

100+ parts

-

1k+ parts

-

10k+ parts

-

983

$29.799

-

-

-

Continental Prestige Electronics

USA . 3,400 parts In-Stock

1+ parts

$60.175

100+ parts

-

1k+ parts

-

10k+ parts

$58.971

3,400

$60.175

-

-

$58.971

Netroflash

USA . 2,000 parts In-Stock

1+ parts

$60.175

100+ parts

$58.971

1k+ parts

-

10k+ parts

-

2,000

$60.175

$58.971

-

-

Microchip USA

USA . 9,792 parts In-Stock

1+ parts

$154.491

100+ parts

-

1k+ parts

-

10k+ parts

-

9,792

$154.491

-

-

-

Argo Parts USA

USA . 433 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

433

-

-

-

-

Overview

Discover the cutting-edge F3L75R12W1H3B27BOMA1 by Infineon Technologies, a top-tier manufacturer known for its superior quality and reliability. This Insulated Gate Bipolar Transistor (IGBT) is designed to excel in various applications, offering unmatched performance and efficiency. With a complex configuration and 4 elements, this N-CHANNEL transistor boasts a fast turn-off time of 385 ns and a maximum collector-emitter voltage of 1200 V. Experience the value of seamless operation and precision with this UL APPROVED product, providing customers with unrivaled benefits and advantages that elevate their projects to new heights.

Feature Benefit Bullets

Polarity or Channel Type: N-CHANNEL

N-CHANNEL configuration offers better switching performance and efficiency compared to P-CHANNEL, making this product a good choice for high-power applications.

Configuration: COMPLEX

The complex configuration allows for enhanced control and customization of the transistor's operation, making it suitable for advanced power electronics applications.

Package Shape: RECTANGULAR

Rectangular package shape provides easy mounting and integration into electronic systems, improving overall reliability and ease of use.

Nominal Turn Off Time (toff): 385 ns

The fast turn-off time of 385 ns ensures efficient switching and minimal power loss, making this product ideal for high-frequency applications.

No. of Terminals: 21

The high number of terminals allows for versatile connections and control options, enabling more complex circuit designs.

Maximum Collector-Emitter Voltage: 1200 V

With a high maximum voltage rating of 1200 V, this IGBT can handle high power levels, making it suitable for industrial and automotive applications.

Transistor Element Material: SILICON

Silicon transistor element material offers good thermal and electrical properties, ensuring reliable performance and longevity in demanding operating conditions.

Minimum Operating Temperature: -40 °C

The wide operating temperature range of -40°C makes this IGBT suitable for use in harsh environments or applications that require low-temperature operation.

Maximum Collector Current (IC): 45 A

With a high maximum collector current rating of 45 A, this IGBT can handle high power levels and currents, making it suitable for a wide range of power electronics applications.

Nominal Turn On Time (ton): 42 ns

The fast turn-on time of 42 ns ensures quick response and efficient operation, making this IGBT suitable for high-speed switching applications.

Reference Standard: UL APPROVED

Being UL approved ensures that this product meets strict safety and quality standards, making it a reliable choice for applications where safety is a priority.

Technical Specifications

Insulated Gate Bipolar Transistors (IGBT) F3L75R12W1H3B27BOMA1 attributes and parameters. Explore more Insulated Gate Bipolar Transistors (IGBT) devices from Infineon Technologies

Specs

Case Connection:

ISOLATED

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

1200 V

Configuration:

JESD-30 Code:

R-XUFM-X21

No. of Elements:

4

No. of Terminals:

21

Minimum Operating Temperature:

-40 Cel

Package Body Material:

UNSPECIFIED

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Peak Reflow Temperature (C):

NOT SPECIFIED

Polarity or Channel Type:

Reference Standard:

UL APPROVED

Surface Mount:

NO

Terminal Form:

UNSPECIFIED

Terminal Position:

UPPER

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Transistor Application:

GENERAL PURPOSE

Transistor Element Material:

SILICON

Nominal Turn Off Time (toff):

385 ns

Nominal Turn On Time (ton):

42 ns

Trade Compliance

F3L75R12W1H3B27BOMA1 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Infineon Technologies

Infineon Technologies AG is a leading global semiconductor manufacturer and provider of comprehensive solutions for automotive, industrial, and consumer applications. Founded in 1999, the company has grown to become one of the largest semiconductor manufacturers in Europe. Infineon is headquartered in Neubiberg, Germany with operations across countries in Europe and Asia Pacific. Infineon provides microelectronics products that address many of today's societal challenges affecting energy efficiency, mobility, security and connectivity. Over the past two decades Infineon has become a major player in the semiconductor industry with an impressive portfolio of innovative technologies. As one of only four companies that produce DRAM chips for automobiles, Infineon produces cutting-edge processors for use in advanced driver assistance systems (ADAS). Likewise, they specialize in providing advanced embedded secure microcontrollers that are essential for connected devices. Furthermore, they offer integrated circuit solutions for industrial power control such as motor controllers and embedded gate drivers.

previous next
The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

CEO

Jochen Hanebeck

Chief Financial Officer

Sven Schneider

Chief Marketing Officer

Andreas Urschitz

Manufacturer fab locations 19

Fab name Location Fab Initiation Wafer Capacity

Villach 300mm

Fabrication

Fab Initiation

2011

Austria

Villach

Wafer Capacity

11,000

2011

11,000

Kulim 2

Fabrication

Fab Initiation

2016

Malaysia

Kulim

Wafer Capacity

79,500

2016

79,500

Dresden - Module 3

Fabrication

Fab Initiation

1999

Germany

Dresden

Wafer Capacity

58,000

1999

58,000

Villach Building

Fabrication

Fab Initiation

2016

Austria

Villach

Wafer Capacity

2,000

2016

2,000

Regensburg

Fabrication

Fab Initiation

1986

Germany

Regensburg

Wafer Capacity

60,000

1986

60,000

Dresden 200 - Module 1

Fabrication

Fab Initiation

1995

Germany

Dresden

Wafer Capacity

28,000

1995

28,000

Dresden 200 - Module 2

Fabrication

Fab Initiation

1996

Germany

Dresden

Wafer Capacity

28,000

1996

28,000

Building 38

Fabrication

Fab Initiation

2005

Germany

Dresden

Wafer Capacity

500

2005

500

Building 47

Fabrication

Fab Initiation

2005

Germany

Dresden

Wafer Capacity

500

2005

500

Kulim 1

Fabrication

Fab Initiation

2006

Malaysia

Kulim

Wafer Capacity

110,000

2006

110,000

Mesa Facility

Fabrication

Fab Initiation

1990

USA

Mesa

Wafer Capacity

3,000

1990

3,000

Villach 150mm

Fabrication

Fab Initiation

1981

Austria

Villach

Wafer Capacity

35,000

1981

35,000

Villach 200mm

Fabrication

Fab Initiation

1995

Austria

Villach

Wafer Capacity

68,000

1995

68,000

Temecula

Fabrication

Fab Initiation

1995

USA

Temecula

Wafer Capacity

30,000

1995

30,000

Villach 300mm

Fabrication

Fab Initiation

2021

Austria

Villach

Wafer Capacity

2021

Villach 150mm

Fabrication

Fab Initiation

2018

Austria

Villach

Wafer Capacity

5,000

2018

5,000

Kulim 3

Fabrication

Fab Initiation

2024

Malaysia

Kulim

Wafer Capacity

2024

Fab 25

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

31,000

1995

31,000

Dresden - Module 4

Fabrication

Fab Initiation

2026

Germany

Dresden

Wafer Capacity

2026

Category top products 20

Authentic purchasing experiences

Partstack™ will investigate all reported instances of potential suspect/counterfeit part listings.

Similar products 5