Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
Discover essential electronic components for your devices, including CPU accelerators, system cache controllers, computer processors, motherboards, and graphics computing systems. Enhance device performance and connectivity with reliable components engineered for seamless integration and optimal functionality.
Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
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N-CHANNEL; Surface Mount: NO; Maximum Power Dissipation (Abs): 250 W; Maximum Collector Current (IC): 65 A; Maximum Fall Time (tf): 41 ns; Maximum Operating Temperature: 175 Cel;
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Corohmni
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Semicontronic
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Insulated Gate Bipolar Transistors (IGBT) IRGP4640DPBF attributes and parameters. Explore more Insulated Gate Bipolar Transistors (IGBT) devices from International Rectifier
Maximum Collector Current (IC):
Maximum Collector-Emitter Voltage:
Maximum Fall Time (tf):
Maximum Gate-Emitter Threshold Voltage:
Maximum Gate-Emitter Voltage:
Maximum Operating Temperature:
Polarity or Channel Type:
Maximum Power Dissipation (Abs):
Maximum Rise Time (tr):
Sub-Category:
Surface Mount:
IRGP4640DPBF Transistors trade compliance attributes, and parameters.
ECCN
EAR99
ECCN Governance
EAR
SMMBT3904LT1G
Onsemi
SMMBT3904LT1G by Onsemi is a NPN BJT with 3 terminals, 0.3W power dissipation, and 40V max collector-emitter voltage. Ideal for small outline applications requiring a transistor with hFE of at least 30, it operates up to 150°C and has a transition frequency of 300MHz.
CDSOT23-SM712
Bourns
Bourns CDSOT23-SM712 is a bidirectional Transient Voltage Suppressor diode with 400W peak power dissipation and 20uA reverse current. Ideal for surge protection in applications requiring a max clamping voltage of 14V, such as IEC-61000-4-2 compliant systems. Operates b/w -55°C to 150°C with matte tin finish and Gull Wing terminals.
2N7002
Comchip Technology
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .2 W; Maximum Operating Temperature: 150 Cel; Operating Mode: ENHANCEMENT MODE;
OPA2227UA
Texas Instruments
OPA2227UA by Texas Instruments is a dual operational amplifier with low-offset voltage of 200 uV and bias current of 0.01 uA. It operates at temperatures ranging from -40 to 85 °C, making it suitable for industrial applications requiring precise signal amplification. With a unity gain bandwidth of 8000 kHz, this op amp is ideal for high-frequency circuit designs.
1N4148WS
Vishay Intertechnology
Vishay Intertechnology's 1N4148WS is a single rectifier diode with a max forward voltage of 1V and output current of 0.15A. With a fast reverse recovery time of 0.004us, it operates up to 150°C. Ideal for applications requiring high-speed switching and low power consumption in surface mount configurations.
LM2931AZ-5.0RPG
LM2931AZ-5.0RPG by Onsemi is a Fixed Positive Single Output LDO Regulator with 5V nominal output voltage and 0.1A max output current. It features a low dropout voltage of 0.6V, making it suitable for applications requiring stable power supply in temperature range from -40 to 125°C. The package style is cylindrical with matte tin terminal finish, ideal for various electronic devices needing precise voltage regulation.
LM107H/883
Rochester Electronics
OPERATIONAL AMPLIFIER; Temperature Grade: MILITARY; Terminal Form: WIRE; No. of Terminals: 8; Package Shape: ROUND; Maximum Average Bias Current (IIB): .1 uA;
BSS138
Vishay Semiconductors
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Package Style (Meter): SMALL OUTLINE; Package Shape: RECTANGULAR; Transistor Application: SWITCHING;
1N4148WT
Bytesonic Electronics
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: FLAT; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
2N7002 by Vishay Intertechnology is a N-CHANNEL FET with 60V DS Breakdown Voltage, 0.115A Drain Current, and 7.5 ohm On Resistance. Ideal for SWITCHING applications due to its SINGLE configuration with BUILT-IN DIODE. Operates in ENHANCEMENT MODE, suitable for surface mount with GULL WING terminals.
LM317T
Micro Commercial Components
ADJUSTABLE POSITIVE SINGLE OUTPUT STANDARD REGULATOR; No. of Terminals: 3; Terminal Form: THROUGH-HOLE; Moisture Sensitivity Level (MSL): 1; Maximum Output Current-1: 1.5 A; Operating Temperature (TJ-Min): 0 Cel;
USB3320C-EZK-TR
Standard Microsystems
INTERFACE CIRCUIT; Temperature Grade: INDUSTRIAL; Terminal Form: NO LEAD; No. of Terminals: 32; Package Code: HVQCCN; Package Shape: SQUARE;
C1210C104K5RACTU
KEMET Corporation
KEMET C1210C104K5RACTU is a ceramic capacitor with 0.1uF capacitance, rated for 50V. It has X7R temperature characteristics and ±10% tolerance, suitable for surface mount applications in a wide temperature range from -55°C to 125°C. Its compact rectangular package makes it ideal for various electronic devices.
Diotec Semiconductor Ag
Jiangsu Changjiang Electronics Technology
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .35 W; Operating Mode: ENHANCEMENT MODE; Transistor Application: SWITCHING;
STM32H743XIH6
STMicroelectronics
STM32H743XIH6 by STMicroelectronics is a 32-bit microcontroller with Cortex-M7 CPU, 36-Ch 16-Bit ADC, and 2-Ch 12-Bit DAC. It operates at up to 48 MHz, has 1085440 bytes of RAM, and offers connectivity options like CAN, I2C, USB. Ideal for industrial applications requiring high-performance processing and extensive peripheral support.
M39029/58-360
Carlisle Interconnect Technologies
GENERAL CONN ACCESSORY; Associated Military - Specifications: MIL-C-55302/69, MIL-C-38999; Maximum Operating Temperature: 200 Cel; MIL-Connector Accessory: CONTACT; Terminal Type: CRIMP; MIL Conformity: YES;
2N2222A
National Semiconductor
NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .5 A;
LM358M
OPERATIONAL AMPLIFIER; Temperature Grade: COMMERCIAL; Terminal Form: GULL WING; No. of Terminals: 8; Package Code: SOP; Package Shape: RECTANGULAR;
Fairchild Semiconductor
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .36 W; Operating Mode: ENHANCEMENT MODE; Qualification: Not Qualified;
AUIRGDC0250
Infineon Technologies
AUIRGDC0250 by Infineon Technologies is an N-CHANNEL IGBT with a max fall time of 1371 ns, power dissipation of 543 W, and max operating temp of 150°C. It's ideal for high-power applications requiring a collector-emitter voltage up to 1200 V and collector current up to 141 A.
SKM150GB12T4
Semikron International
SKM150GB12T4 by Semikron is an N-CHANNEL IGBT with 2 SERIES CONNECTED elements. It has a max VCEsat of 2.05V and can handle up to 230A of collector current. Ideal for POWER CONTROL applications, this device operates at a max temperature of 175°C with a collector-emitter voltage rating of 1200V.
IXXX160N65C4
Littelfuse
IXXX160N65C4 by Littelfuse is an N-CHANNEL IGBT with 940W power dissipation, 650V collector-emitter voltage, and 290A collector current. Ideal for high-power applications requiring efficient switching at up to 175°C operating temperature.
IRG4BC30FDPBF
IRG4BC30FDPBF by Infineon Technologies is an N-CHANNEL IGBT with a max collector-emitter voltage of 600V and a max gate-emitter voltage of 20V. It has a nominal turn-off time of 620ns and is designed for power control applications. With a max operating temperature of 150°C, it can handle up to 31A of collector current efficiently.
APT50GP60J
Microchip Technology
APT50GP60J by Microchip Technology is an N-CHANNEL IGBT transistor with a max collector-emitter voltage of 600V and a max collector current of 100A. It has a nominal turn-off time of 202ns and a turn-on time of 55ns, making it ideal for power control applications. The transistor comes in a rectangular package style with flange mount and operates at temperatures up to 150°C.
SKIIP13NAB065V1
Semikron International's SKIIP13NAB065V1 is an N-CHANNEL IGBT for POWER CONTROL applications. With 600V VCEsat, 24A IC, and 205ns toff, it offers efficient performance. The FLANGE MOUNT package with 24 terminals and UL RECOGNIZED standard makes it ideal for high-power systems.
IRGP20B60PDPBF
International Rectifier
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 220 W; Maximum Collector Current (IC): 40 A; Maximum Collector-Emitter Voltage: 600 V;
APT75GP120J
Advanced Power Technology
N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Collector Current (IC): 128 A; Package Body Material: PLASTIC/EPOXY; Peak Reflow Temperature (C): NOT SPECIFIED;
IXXX200N60C3
IXYS Corporation
N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 1630 W; Maximum Collector Current (IC): 340 A; Terminal Finish: Matte Tin (Sn);
FP30R06W1E3B11BOMA1
Infineon Technologies' FP30R06W1E3B11BOMA1 is an N-CHANNEL IGBT with 7 elements, 600V max collector-emitter voltage, and 37A max collector current. It has a complex configuration for power control applications, featuring a rectangular package style with flange mount and UL approval. Nominal turn off time is 245ns while turn on time is 42ns.
IRGPS40B120UPBF
N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 595 W; Maximum Collector Current (IC): 80 A; Nominal Turn On Time (ton): 115 ns;
ISL9V3040D3ST-F085C
ISL9V3040D3ST-F085C by Onsemi is an N-CHANNEL IGBT transistor with a VCEsat of 1.65V and IC of 21A, ideal for automotive ignition applications. It has a small outline package style, operates b/w -55 to 175 °C, and features a gate-emitter threshold voltage of 2.2V. The device offers fast rise/fall times (0.007/0.015 ns) making it suitable for high-speed switching requirements in automotive systems.
IKP08N65H5XKSA1
IKP08N65H5XKSA1 by Infineon Technologies is an N-CHANNEL IGBT with 650V VCEsat, 18A IC, and 70W power dissipation. Ideal for POWER CONTROL applications due to its built-in diode, 130ns turn-off time, and -40 to 175°C operating temperature range.
FGH30S130P
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 500 W; Maximum Collector Current (IC): 60 A; Case Connection: COLLECTOR;
IRGP50B60PDPBF
IRGP50B60PDPBF by Infineon is an N-CHANNEL IGBT with 600V max collector-emitter voltage, 370W power dissipation, and 75A max collector current. Ideal for power control applications, it features a single configuration with built-in diode in a rectangular package shape. Operating at up to 150°C, it offers fast rise time of 36ns and fall time of 65ns.
IHW30N160R2FKSA1
IHW30N160R2FKSA1 by Infineon is an N-CHANNEL IGBT with 1600V VCE, 60A IC, and 675ns toff. Ideal for POWER CONTROL applications, it features a SINGLE configuration with BUILT-IN DIODE in a PLASTIC/EPOXY package. Operating at up to 175°C, it has a FLANGE MOUNT style for COLLECTOR connection.
FGH40N60SMDF_F085
FGH40N60SMDF_F085 by Onsemi is an N-CHANNEL IGBT with 600V VCEsat, 80A IC, and 349W power dissipation. Ideal for power control applications due to its single configuration with built-in diode. Operates in temperatures ranging from -55°C to 175°C, making it suitable for various industrial uses.
FGH40N65UFDTU_F085
FGH40N65UFDTU_F085 by Onsemi is an N-CHANNEL IGBT with VCEsat of 2.4V, IC of 80A, and Pmax of 290W. Ideal for power control applications, it operates up to 150°C with a VCE max of 650V.
FS150R12KT3
Eupec & Kg
N-CHANNEL; Configuration: BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR; Surface Mount: NO; Maximum Collector Current (IC): 200 A; Package Body Material: UNSPECIFIED; Maximum Collector-Emitter Voltage: 1200 V;
FB30R06W1E3BOMA1
Infineon Technologies' FB30R06W1E3BOMA1 is an N-CHANNEL IGBT with 6 elements, max. collector-emitter voltage of 600V, and max. collector current of 39A. It has a nominal turn-off time of 245ns and turn-on time of 42ns, suitable for applications requiring high power switching like motor drives and inverters at up to 175°C operating temperature.
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IRGP4640DPBF
IRGP4640DPBF by Infineon is an N-CHANNEL IGBT with 600V VCEsat, 65A IC, and 250W power dissipation. Ideal for power control applications, it features a built-in diode, 31ns rise time, and -55 to 175°C operating temperature range.
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 370 W; Maximum Collector Current (IC): 75 A; Maximum Fall Time (tf): 65 ns;
IRGPS40B120UPBF by Infineon Technologies is an N-CHANNEL IGBT transistor with a max collector-emitter voltage of 1200V and a max collector current of 80A. It is commonly used in motor control applications due to its fast nominal turn on time of 115ns and nominal turn off time of 357ns.
IRGPS60B120KDP
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 595 W; Maximum Collector Current (IC): 105 A; Terminal Position: SINGLE;
IRGPS60B120KDP by Infineon Technologies is an N-CHANNEL IGBT with a max collector-emitter voltage of 1200V and a max gate-emitter voltage of 20V. It is commonly used in motor control applications due to its single configuration with built-in diode.
IRGP4650D-EPBF
N-CHANNEL; Surface Mount: NO; Maximum Power Dissipation (Abs): 268 W; Maximum Collector Current (IC): 76 A; Maximum Rise Time (tr): 42 ns; Maximum Fall Time (tf): 54 ns;
IRGP4650D-EPBF by Infineon Technologies is an N-CHANNEL IGBT with 42ns rise time, 54ns fall time, and 268W power dissipation. It operates at a max temp of 175°C and has a collector-emitter voltage of 600V. Ideal for high-power applications requiring fast switching capabilities.
IRGP4066D-EPBF
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 454 W; Maximum Collector Current (IC): 140 A; Package Body Material: PLASTIC/EPOXY;
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 454 W; Maximum Collector Current (IC): 140 A; Maximum Gate-Emitter Threshold Voltage: 6.5 V;
IRGP35B60PDPBF
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 308 W; Maximum Collector Current (IC): 60 A; Maximum Gate-Emitter Voltage: 20 V;
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 220 W; Maximum Collector Current (IC): 40 A; Maximum Gate-Emitter Voltage: 20 V;
IRGP4266DPBF
N-CHANNEL; Surface Mount: NO; Maximum Power Dissipation (Abs): 455 W; Maximum Collector Current (IC): 140 A; Maximum Gate-Emitter Threshold Voltage: 7.7 V; Peak Reflow Temperature (C): NOT SPECIFIED;
N-CHANNEL; Surface Mount: NO; Maximum Power Dissipation (Abs): 455 W; Maximum Collector Current (IC): 140 A; Peak Reflow Temperature (C): NOT SPECIFIED; Maximum Gate-Emitter Threshold Voltage: 7.7 V;
IRGP4263PBF
N-CHANNEL; Surface Mount: NO; Maximum Power Dissipation (Abs): 300 W; Maximum Collector Current (IC): 90 A; Maximum Fall Time (tf): 50 ns; Maximum Gate-Emitter Threshold Voltage: 7.7 V;
IRGP4263PBF by Infineon Technologies is an N-CHANNEL IGBT with tr of 80ns and tf of 50ns. It has a max power dissipation of 300W, ideal for high-power applications like motor drives and inverters. With VCE of 650V and IC of 90A, it operates efficiently at up to 175°C.
IRGP4640D-EPBF
N-CHANNEL; Surface Mount: NO; Maximum Power Dissipation (Abs): 250 W; Maximum Collector Current (IC): 65 A; Maximum Gate-Emitter Threshold Voltage: 6.5 V; Maximum Rise Time (tr): 31 ns;
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