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IRGP20B60PDPBF

International Rectifier

IRGP20B60PDPBF by International Rectifier

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 220 W; Maximum Collector Current (IC): 40 A; Maximum Collector-Emitter Voltage: 600 V;

Median Price

$8.518

Lifecycle Status

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6

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Nova Conductors

Japan . 150 parts In-Stock

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$3.201

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Voyager Components

USA . 398 parts In-Stock

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$13.836

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Chip Stock

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Vyrian

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Digiode

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ComSIT Distribution GmbH

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Advanced Electronics

New Zealand . 350 parts In-Stock

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$1.246

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$1.134

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$1.022

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$1.246

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Aztec Data Supply Inc.

USA . 3,482 parts In-Stock

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$1.470

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Modulus Dynamics

Lithuania . 19,566 parts In-Stock

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$2.752

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$2.642

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$2.532

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Corohmni

South Africa . 1,050 parts In-Stock

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$2.752

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Continental Prestige Electronics

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Argo Parts USA

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Component Stockers USA

USA . 3,161 parts In-Stock

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$9.720

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$9.230

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$8.940

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Ampacity Inc.

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Microchip USA

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$15.015

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AZTECH Wire

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Semicontronic

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$30.274

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RC Electronics

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$3.370

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$3.180

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Perfect Parts

USA . 7,672 parts In-Stock

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A-Z Elektronik GmbH

Germany . 6,110 parts In-Stock

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USA . 6,000 parts In-Stock

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Alle Elektronik GmbH

Germany . 4,073 parts In-Stock

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Glotronic Ltd.

UK . 1,965 parts In-Stock

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Netroflash

USA . 1,000 parts In-Stock

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$3.040

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$2.976

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Corphita

USA . 38 parts In-Stock

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Assy Fe

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Technical Specifications

Insulated Gate Bipolar Transistors (IGBT) IRGP20B60PDPBF attributes and parameters. Explore more Insulated Gate Bipolar Transistors (IGBT) devices from International Rectifier

Specs

Additional Features:

HIGH RELIABILITY, LOW CONDUCTION LOSS

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

600 V

Maximum Fall Time (tf):

17 ns

Maximum Gate-Emitter Threshold Voltage:

5 V

Maximum Gate-Emitter Voltage:

20 V

JEDEC-95 Code:

TO-247AC

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Peak Reflow Temperature (C):

250

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Maximum Rise Time (tr):

8 ns

Sub-Category:

Insulated Gate BIP Transistors

Surface Mount:

NO

Terminal Finish:

MATTE TIN OVER NICKEL

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

POWER CONTROL

Transistor Element Material:

SILICON

Nominal Turn Off Time (toff):

138 ns

Nominal Turn On Time (ton):

25 ns

Trade Compliance

IRGP20B60PDPBF Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

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