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SKB02N120ATMA1

Infineon Technologies

SKB02N120ATMA1 by Infineon Technologies

Infineon's SKB02N120ATMA1 is an N-CHANNEL IGBT with a 1200V max collector-emitter voltage and 6.2A max collector current. It has a built-in diode, 375ns turn-off time, and is ideal for power control applications requiring fast switching capabilities in surface-mount designs.

Median Price

$1.961

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Nova Conductors

Japan . 900 parts In-Stock

1+ parts

$1.961

100+ parts

-

1k+ parts

-

10k+ parts

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900

$1.961

-

-

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Vyrian

USA . 5,183 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

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5,183

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-

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Digiode

USA . 242 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

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242

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Corohmni

South Africa . 250 parts In-Stock

1+ parts

$0.789

100+ parts

-

1k+ parts

-

10k+ parts

-

250

$0.789

-

-

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Advanced Electronics

New Zealand . 50 parts In-Stock

1+ parts

$1.045

100+ parts

$0.993

1k+ parts

$0.993

10k+ parts

-

50

$1.045

$0.993

$0.993

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Modulus Dynamics

Lithuania . 2,407 parts In-Stock

1+ parts

$1.450

100+ parts

$1.392

1k+ parts

$1.334

10k+ parts

-

2,407

$1.450

$1.392

$1.334

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Aranea Global

USA . 100 parts In-Stock

1+ parts

$1.922

100+ parts

-

1k+ parts

$1.845

10k+ parts

-

100

$1.922

-

$1.845

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Continental Prestige Electronics

USA . 5,679 parts In-Stock

1+ parts

$1.961

100+ parts

-

1k+ parts

-

10k+ parts

$1.922

5,679

$1.961

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-

$1.922

Argo Parts USA

USA . 2,330 parts In-Stock

1+ parts

$1.961

100+ parts

-

1k+ parts

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10k+ parts

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2,330

$1.961

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Ampacity Inc.

Singapore . 1,611 parts In-Stock

1+ parts

$4.050

100+ parts

-

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1,611

$4.050

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Microchip USA

USA . 8,222 parts In-Stock

1+ parts

$12.749

100+ parts

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8,222

$12.749

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AZTECH Wire

Italy . 305 parts In-Stock

1+ parts

$13.616

100+ parts

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305

$13.616

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Semicontronic

India . 286 parts In-Stock

1+ parts

$28.050

100+ parts

$27.349

1k+ parts

$27.208

10k+ parts

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286

$28.050

$27.349

$27.208

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Perfect Parts

USA . 8,960 parts In-Stock

1+ parts

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100+ parts

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8,960

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Corphita

USA . 926 parts In-Stock

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926

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Overview

Unlock the power of efficient and reliable power control with the SKB02N120ATMA1 by Infineon Technologies. As a leading manufacturer in the industry, Infineon Technologies delivers top-notch quality and performance in the Insulated Gate Bipolar Transistors (IGBT) category. This N-CHANNEL transistor with a built-in diode is perfect for a variety of applications, offering customers unparalleled value and benefits. Say goodbye to slow turn-off times and hello to faster response with the SKB02N120ATMA1. Experience the difference today!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides durability and protection, making the product a reliable choice.

Polarity or Channel Type: N-CHANNEL

N-channel technology allows for efficient power control, enhancing the product's performance.

Configuration: SINGLE WITH BUILT-IN DIODE

The built-in diode simplifies circuit design and improves efficiency, making this product convenient for users.

Transistor Application: POWER CONTROL

Specifically designed for power control applications, this product offers precision and reliability in managing electrical power.

Surface Mount: YES

The surface mount feature allows for easy installation and space-saving benefits, making this product a practical choice.

Package Shape: RECTANGULAR

The rectangular shape enhances the product's compatibility with various electronic devices and systems.

Terminal Form: GULL WING

The gull wing form ensures secure connections, contributing to the product's overall stability and performance.

No. of Elements: 1

With a single element, this product is streamlined and efficient in its operation.

Nominal Turn Off Time (toff): 375 ns

The fast turn off time improves switching speed and reduces power loss, making this product an efficient choice.

No. of Terminals: 2

The two terminals provide simple connectivity options, enhancing the product's usability.

Package Style (Meter): SMALL OUTLINE

The small outline package style saves space and facilitates compact designs, making this product ideal for applications with limited space.

Maximum Operating Temperature: 150 °C

With a high maximum operating temperature, this product can withstand demanding conditions and ensure reliable performance.

Maximum Collector-Emitter Voltage: 1200 V

The high collector-emitter voltage rating allows for versatile usage in different voltage applications.

Transistor Element Material: SILICON

Silicon material ensures high performance and reliability, making this product a durable choice.

Maximum Collector Current (IC): 6.2 A

The high collector current rating enables the product to handle high power requirements effectively.

Terminal Finish: TIN

Tin terminal finish provides corrosion resistance and ensures secure connections, enhancing the longevity of the product.

Terminal Position: SINGLE

The single terminal position simplifies installation and maintenance, making this product user-friendly.

Moisture Sensitivity Level (MSL): 1

With a low moisture sensitivity level, this product is less prone to moisture-induced damage, ensuring longevity and reliability.

Case Connection: COLLECTOR

The collector case connection facilitates efficient heat dissipation and enhances the product's overall performance.

Nominal Turn On Time (ton): 40 ns

The quick turn-on time improves response speed and efficiency, making this product ideal for fast-switching applications.

Technical Specifications

Insulated Gate Bipolar Transistors (IGBT) SKB02N120ATMA1 attributes and parameters. Explore more Insulated Gate Bipolar Transistors (IGBT) devices from Infineon Technologies

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

1200 V

JEDEC-95 Code:

TO-263AB

JESD-30 Code:

R-PSSO-G2

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Polarity or Channel Type:

Qualification:

Not Qualified

Surface Mount:

YES

Terminal Finish:

TIN

Terminal Form:

GULL WING

Terminal Position:

SINGLE

Transistor Application:

POWER CONTROL

Transistor Element Material:

SILICON

Nominal Turn Off Time (toff):

375 ns

Nominal Turn On Time (ton):

40 ns

Trade Compliance

SKB02N120ATMA1 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Infineon Technologies

Infineon Technologies AG is a leading global semiconductor manufacturer and provider of comprehensive solutions for automotive, industrial, and consumer applications. Founded in 1999, the company has grown to become one of the largest semiconductor manufacturers in Europe. Infineon is headquartered in Neubiberg, Germany with operations across countries in Europe and Asia Pacific. Infineon provides microelectronics products that address many of today's societal challenges affecting energy efficiency, mobility, security and connectivity. Over the past two decades Infineon has become a major player in the semiconductor industry with an impressive portfolio of innovative technologies. As one of only four companies that produce DRAM chips for automobiles, Infineon produces cutting-edge processors for use in advanced driver assistance systems (ADAS). Likewise, they specialize in providing advanced embedded secure microcontrollers that are essential for connected devices. Furthermore, they offer integrated circuit solutions for industrial power control such as motor controllers and embedded gate drivers.

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Management team

CEO

Jochen Hanebeck

Chief Financial Officer

Sven Schneider

Chief Marketing Officer

Andreas Urschitz

Manufacturer fab locations 19

Fab name Location Fab Initiation Wafer Capacity

Villach 300mm

Fabrication

Fab Initiation

2011

Austria

Villach

Wafer Capacity

11,000

2011

11,000

Kulim 2

Fabrication

Fab Initiation

2016

Malaysia

Kulim

Wafer Capacity

79,500

2016

79,500

Dresden - Module 3

Fabrication

Fab Initiation

1999

Germany

Dresden

Wafer Capacity

58,000

1999

58,000

Villach Building

Fabrication

Fab Initiation

2016

Austria

Villach

Wafer Capacity

2,000

2016

2,000

Regensburg

Fabrication

Fab Initiation

1986

Germany

Regensburg

Wafer Capacity

60,000

1986

60,000

Dresden 200 - Module 1

Fabrication

Fab Initiation

1995

Germany

Dresden

Wafer Capacity

28,000

1995

28,000

Dresden 200 - Module 2

Fabrication

Fab Initiation

1996

Germany

Dresden

Wafer Capacity

28,000

1996

28,000

Building 38

Fabrication

Fab Initiation

2005

Germany

Dresden

Wafer Capacity

500

2005

500

Building 47

Fabrication

Fab Initiation

2005

Germany

Dresden

Wafer Capacity

500

2005

500

Kulim 1

Fabrication

Fab Initiation

2006

Malaysia

Kulim

Wafer Capacity

110,000

2006

110,000

Mesa Facility

Fabrication

Fab Initiation

1990

USA

Mesa

Wafer Capacity

3,000

1990

3,000

Villach 150mm

Fabrication

Fab Initiation

1981

Austria

Villach

Wafer Capacity

35,000

1981

35,000

Villach 200mm

Fabrication

Fab Initiation

1995

Austria

Villach

Wafer Capacity

68,000

1995

68,000

Temecula

Fabrication

Fab Initiation

1995

USA

Temecula

Wafer Capacity

30,000

1995

30,000

Villach 300mm

Fabrication

Fab Initiation

2021

Austria

Villach

Wafer Capacity

2021

Villach 150mm

Fabrication

Fab Initiation

2018

Austria

Villach

Wafer Capacity

5,000

2018

5,000

Kulim 3

Fabrication

Fab Initiation

2024

Malaysia

Kulim

Wafer Capacity

2024

Fab 25

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

31,000

1995

31,000

Dresden - Module 4

Fabrication

Fab Initiation

2026

Germany

Dresden

Wafer Capacity

2026

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