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IKD04N60RFATMA1

Infineon Technologies

IKD04N60RFATMA1 by Infineon Technologies

IKD04N60RFATMA1 by Infineon is an N-CHANNEL IGBT with 600V max. collector-emitter voltage and 8A max. collector current. It has a built-in diode, 216ns turn-off time, and is ideal for power control applications requiring fast switching speeds in surface mount designs.

Median Price

$0.695

Lifecycle Status

Suppliers In-Stock

10

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Newark

USA . 1,762 parts In-Stock

1+ parts

$0.920

100+ parts

$0.364

1k+ parts

$0.270

10k+ parts

-

1,762

$0.920

$0.364

$0.270

-

DigiKey

USA . 2,392 parts In-Stock

1+ parts

$1.450

100+ parts

$0.609

1k+ parts

$0.434

10k+ parts

$0.345

2,392

$1.450

$0.609

$0.434

$0.345

Mouser Electronics

USA . 2,197 parts In-Stock

1+ parts

$1.700

100+ parts

$0.691

1k+ parts

$0.480

10k+ parts

$0.397

2,197

$1.700

$0.691

$0.480

$0.397

Verical

USA . 2,500 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

$0.505

2,500

-

-

-

$0.505

Element14

Singapore . 2,442 parts In-Stock

1+ parts

-

100+ parts

$0.695

1k+ parts

$0.461

10k+ parts

$0.439

2,442

-

$0.695

$0.461

$0.439

Farnell

UK . 1,827 parts In-Stock

1+ parts

-

100+ parts

$0.539

1k+ parts

$0.379

10k+ parts

$0.323

1,827

-

$0.539

$0.379

$0.323

Rochester

USA . 382 parts In-Stock

1+ parts

-

100+ parts

$0.458

1k+ parts

$0.380

10k+ parts

$0.339

382

-

$0.458

$0.380

$0.339

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 754 parts In-Stock

1+ parts

$0.417

100+ parts

-

1k+ parts

-

10k+ parts

-

754

$0.417

-

-

-

Nova Conductors

Japan . 77 parts In-Stock

1+ parts

$0.595

100+ parts

-

1k+ parts

-

10k+ parts

-

77

$0.595

-

-

-

Vyrian

USA . 1,982 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

1,982

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Modulus Dynamics

Lithuania . 23,525 parts In-Stock

1+ parts

$0.337

100+ parts

$0.324

1k+ parts

$0.310

10k+ parts

-

23,525

$0.337

$0.324

$0.310

-

Semicontronic

India . 1,976 parts In-Stock

1+ parts

$0.373

100+ parts

$0.364

1k+ parts

$0.362

10k+ parts

-

1,976

$0.373

$0.364

$0.362

-

Ampacity Inc.

Singapore . 1,697 parts In-Stock

1+ parts

$0.373

100+ parts

-

1k+ parts

-

10k+ parts

-

1,697

$0.373

-

-

-

Corphita

USA . 403 parts In-Stock

1+ parts

$0.395

100+ parts

-

1k+ parts

-

10k+ parts

-

403

$0.395

-

-

-

Component Stockers USA

USA . 7,495 parts In-Stock

1+ parts

$0.450

100+ parts

$0.420

1k+ parts

$0.450

10k+ parts

-

7,495

$0.450

$0.420

$0.450

-

Aranea Global

USA . 1,000 parts In-Stock

1+ parts

$0.583

100+ parts

-

1k+ parts

$0.560

10k+ parts

-

1,000

$0.583

-

$0.560

-

Argo Parts USA

USA . 2,638 parts In-Stock

1+ parts

$0.595

100+ parts

-

1k+ parts

-

10k+ parts

$0.577

2,638

$0.595

-

-

$0.577

Corohmni

South Africa . 224 parts In-Stock

1+ parts

$0.812

100+ parts

-

1k+ parts

-

10k+ parts

-

224

$0.812

-

-

-

Aztec Data Supply Inc.

USA . 83 parts In-Stock

1+ parts

$1.710

100+ parts

-

1k+ parts

-

10k+ parts

-

83

$1.710

-

-

-

RC Electronics

USA . 86,279 parts In-Stock

1+ parts

-

100+ parts

$0.610

1k+ parts

$0.550

10k+ parts

$0.540

86,279

-

$0.610

$0.550

$0.540

Perfect Parts

USA . 5,611 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

5,611

-

-

-

-

Authorized Procurement Solutions

USA . 5,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

5,000

-

-

-

-

Continental Prestige Electronics

USA . 2,474 parts In-Stock

1+ parts

-

100+ parts

$0.652

1k+ parts

$0.425

10k+ parts

-

2,474

-

$0.652

$0.425

-

Robosynatics

Brazil . 950 parts In-Stock

1+ parts

-

100+ parts

$61.675

1k+ parts

$61.675

10k+ parts

$61.675

950

-

$61.675

$61.675

$61.675

Lucentia Tech

USA . 950 parts In-Stock

1+ parts

-

100+ parts

$61.675

1k+ parts

$61.675

10k+ parts

$61.675

950

-

$61.675

$61.675

$61.675

Overview

Unlock the power of efficient and reliable performance with the IKD04N60RFATMA1 by Infineon Technologies. As a leader in the manufacturing of Insulated Gate Bipolar Transistors, Infineon ensures top-notch quality and cutting-edge technology in every product. Ideal for power control applications, this transistor offers a fast turn-on time of 18 ns and a maximum collector-emitter voltage of 600 V, making it a versatile and dependable choice for your projects. With a single configuration and built-in diode, this IGBT provides value, efficiency, and peace of mind to customers looking for high-performance solutions. Up your game with the IKD04N60RFATMA1 and experience the difference Infineon brings to the table.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides insulation and protection to the internal components of the IGBT, making it durable and reliable for power control applications.

Polarity or Channel Type: N-CHANNEL

N-channel IGBTs typically have lower on-state voltage drop and faster switching speeds compared to P-channel types, making them more efficient for power control applications.

Configuration: SINGLE WITH BUILT-IN DIODE

The built-in diode allows for easy implementation of freewheeling diode functionality, improving overall efficiency and reducing component count in power control circuits.

Transistor Application: POWER CONTROL

Designed specifically for power control applications, this IGBT is optimized for high power handling and efficient switching performance.

Surface Mount: YES

Surface mount design allows for easy and compact PCB assembly, making it suitable for space-constrained applications.

Package Shape: RECTANGULAR

Rectangular package shape provides efficient use of PCB real estate and allows for easy mounting and heat dissipation.

Nominal Turn Off Time (toff): 216 ns

Fast turn-off time ensures quick switching speed and reduces power losses during power control operations.

No. of Terminals: 2

Having only 2 terminals simplifies the integration of the IGBT in the circuit and reduces the chances of wiring errors.

Maximum Collector-Emitter Voltage: 600 V

High maximum voltage rating allows for operation in high voltage applications without risk of breakdown.

Transistor Element Material: SILICON

Silicon-based transistors offer good overall performance characteristics including high power handling, fast switching speeds, and reliability.

Maximum Collector Current (IC): 8 A

Capable of handling up to 8A of continuous collector current, making it suitable for medium power applications.

Terminal Finish: TIN

Tin finish on terminals provides good conductivity and solderability for reliable electrical connections.

Terminal Position: SINGLE

Single terminal position simplifies PCB layout and assembly, ensuring proper connection in the circuit.

Case Connection: COLLECTOR

The case connection at the collector terminal allows for efficient heat dissipation, improving the overall thermal performance of the IGBT.

Nominal Turn On Time (ton): 18 ns

Fast turn-on time of 18 ns ensures quick response and efficient switching in power control applications.

Technical Specifications

Insulated Gate Bipolar Transistors (IGBT) IKD04N60RFATMA1 attributes and parameters. Explore more Insulated Gate Bipolar Transistors (IGBT) devices from Infineon Technologies

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

8 A

Maximum Collector-Emitter Voltage:

600 V

JEDEC-95 Code:

TO-252

JESD-30 Code:

R-PSSO-G2

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

2

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Polarity or Channel Type:

Surface Mount:

YES

Terminal Finish:

TIN

Terminal Form:

GULL WING

Terminal Position:

SINGLE

Transistor Application:

POWER CONTROL

Transistor Element Material:

SILICON

Nominal Turn Off Time (toff):

216 ns

Nominal Turn On Time (ton):

18 ns

Trade Compliance

IKD04N60RFATMA1 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Infineon Technologies

Infineon Technologies AG is a leading global semiconductor manufacturer and provider of comprehensive solutions for automotive, industrial, and consumer applications. Founded in 1999, the company has grown to become one of the largest semiconductor manufacturers in Europe. Infineon is headquartered in Neubiberg, Germany with operations across countries in Europe and Asia Pacific. Infineon provides microelectronics products that address many of today's societal challenges affecting energy efficiency, mobility, security and connectivity. Over the past two decades Infineon has become a major player in the semiconductor industry with an impressive portfolio of innovative technologies. As one of only four companies that produce DRAM chips for automobiles, Infineon produces cutting-edge processors for use in advanced driver assistance systems (ADAS). Likewise, they specialize in providing advanced embedded secure microcontrollers that are essential for connected devices. Furthermore, they offer integrated circuit solutions for industrial power control such as motor controllers and embedded gate drivers.

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Management team

CEO

Jochen Hanebeck

Chief Financial Officer

Sven Schneider

Chief Marketing Officer

Andreas Urschitz

Manufacturer fab locations 19

Fab name Location Fab Initiation Wafer Capacity

Villach 300mm

Fabrication

Fab Initiation

2011

Austria

Villach

Wafer Capacity

11,000

2011

11,000

Kulim 2

Fabrication

Fab Initiation

2016

Malaysia

Kulim

Wafer Capacity

79,500

2016

79,500

Dresden - Module 3

Fabrication

Fab Initiation

1999

Germany

Dresden

Wafer Capacity

58,000

1999

58,000

Villach Building

Fabrication

Fab Initiation

2016

Austria

Villach

Wafer Capacity

2,000

2016

2,000

Regensburg

Fabrication

Fab Initiation

1986

Germany

Regensburg

Wafer Capacity

60,000

1986

60,000

Dresden 200 - Module 1

Fabrication

Fab Initiation

1995

Germany

Dresden

Wafer Capacity

28,000

1995

28,000

Dresden 200 - Module 2

Fabrication

Fab Initiation

1996

Germany

Dresden

Wafer Capacity

28,000

1996

28,000

Building 38

Fabrication

Fab Initiation

2005

Germany

Dresden

Wafer Capacity

500

2005

500

Building 47

Fabrication

Fab Initiation

2005

Germany

Dresden

Wafer Capacity

500

2005

500

Kulim 1

Fabrication

Fab Initiation

2006

Malaysia

Kulim

Wafer Capacity

110,000

2006

110,000

Mesa Facility

Fabrication

Fab Initiation

1990

USA

Mesa

Wafer Capacity

3,000

1990

3,000

Villach 150mm

Fabrication

Fab Initiation

1981

Austria

Villach

Wafer Capacity

35,000

1981

35,000

Villach 200mm

Fabrication

Fab Initiation

1995

Austria

Villach

Wafer Capacity

68,000

1995

68,000

Temecula

Fabrication

Fab Initiation

1995

USA

Temecula

Wafer Capacity

30,000

1995

30,000

Villach 300mm

Fabrication

Fab Initiation

2021

Austria

Villach

Wafer Capacity

2021

Villach 150mm

Fabrication

Fab Initiation

2018

Austria

Villach

Wafer Capacity

5,000

2018

5,000

Kulim 3

Fabrication

Fab Initiation

2024

Malaysia

Kulim

Wafer Capacity

2024

Fab 25

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

31,000

1995

31,000

Dresden - Module 4

Fabrication

Fab Initiation

2026

Germany

Dresden

Wafer Capacity

2026

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