Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
Discover essential electronic components for your devices, including CPU accelerators, system cache controllers, computer processors, motherboards, and graphics computing systems. Enhance device performance and connectivity with reliable components engineered for seamless integration and optimal functionality.
Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
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IKD06N60RAATMA1 by Infineon is an N-CHANNEL IGBT with 600V max collector-emitter voltage and 12A max collector current. It has a turn-off time of 335ns and turn-on time of 22ns, suitable for applications requiring fast switching such as motor drives and power supplies.
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The use of plastic/epoxy material makes the IGBT lightweight and durable, ideal for applications where weight and space are limited.
N-channel IGBTs typically have lower on-state voltage drop and higher current carrying capacity compared to P-channel types, making them more efficient for power switching applications.
The built-in diode simplifies the circuit design and protects against reverse voltage spikes, improving the reliability of the overall system.
Surface mount IGBTs are easier to assemble and take up less board space, making them suitable for compact designs and high-density layouts.
The rectangular package allows for easier mounting and alignment on circuit boards, simplifying the assembly process.
With a high maximum voltage rating, this IGBT can handle higher voltages in power switching applications, increasing its versatility and reliability.
The high collector current rating allows this IGBT to handle higher power levels, suitable for applications that require efficient power switching.
The fast turn-on time of 22 nanoseconds ensures quick switching speeds, reducing power losses and improving overall efficiency.
The relatively fast turn-off time of 335 nanoseconds allows for rapid switching transitions, minimizing heat generation and maximizing efficiency.
Compliance with the AEC-Q101 automotive standard ensures high quality and reliability for use in automotive applications, meeting stringent industry requirements.
Insulated Gate Bipolar Transistors (IGBT) IKD06N60RAATMA1 attributes and parameters. Explore more Insulated Gate Bipolar Transistors (IGBT) devices from Infineon Technologies
Additional Features:
Case Connection:
Maximum Collector Current (IC):
Maximum Collector-Emitter Voltage:
Configuration:
JEDEC-95 Code:
JESD-30 Code:
No. of Elements:
No. of Terminals:
Package Body Material:
Package Shape:
Package Style (Meter):
Peak Reflow Temperature (C):
Polarity or Channel Type:
Reference Standard:
Surface Mount:
Terminal Form:
Terminal Position:
Maximum Time At Peak Reflow Temperature (s):
Transistor Application:
Transistor Element Material:
Nominal Turn Off Time (toff):
Nominal Turn On Time (ton):
IKD06N60RAATMA1 Transistors trade compliance attributes, and parameters.
ECCN
EAR99
ECCN Governance
EAR
PCN Obsolescence/ EOL - DK OBS NOTICE
Infineon Technologies AG is a leading global semiconductor manufacturer and provider of comprehensive solutions for automotive, industrial, and consumer applications. Founded in 1999, the company has grown to become one of the largest semiconductor manufacturers in Europe. Infineon is headquartered in Neubiberg, Germany with operations across countries in Europe and Asia Pacific. Infineon provides microelectronics products that address many of today's societal challenges affecting energy efficiency, mobility, security and connectivity. Over the past two decades Infineon has become a major player in the semiconductor industry with an impressive portfolio of innovative technologies. As one of only four companies that produce DRAM chips for automobiles, Infineon produces cutting-edge processors for use in advanced driver assistance systems (ADAS). Likewise, they specialize in providing advanced embedded secure microcontrollers that are essential for connected devices. Furthermore, they offer integrated circuit solutions for industrial power control such as motor controllers and embedded gate drivers.
CEO
Jochen Hanebeck
Chief Financial Officer
Sven Schneider
Chief Marketing Officer
Andreas Urschitz
Villach 300mm
Fabrication
Fab Initiation
2011
Austria
Villach
Wafer Capacity
11,000
Kulim 2
2016
Malaysia
Kulim
79,500
Dresden - Module 3
1999
Germany
Dresden
58,000
Villach Building
2,000
Regensburg
1986
60,000
Dresden 200 - Module 1
1995
28,000
Dresden 200 - Module 2
1996
Building 38
2005
500
Building 47
Kulim 1
2006
110,000
Mesa Facility
1990
USA
Mesa
3,000
Villach 150mm
1981
35,000
Villach 200mm
68,000
Temecula
30,000
2021
2018
5,000
Kulim 3
2024
Fab 25
Austin
31,000
Dresden - Module 4
2026
OPA2277UA/2K5E4
Texas Instruments
OPA2277UA/2K5E4 by Texas Instruments is a dual operational amplifier with low-offset and micropower features. It has a max input offset voltage of 100uV, nominal common mode reject ratio of 140dB, and min slew rate of 0.8V/us. Ideal for industrial applications requiring precise signal amplification in compact designs.
LM358N
Kec
OPERATIONAL AMPLIFIER; Temperature Grade: COMMERCIAL; Terminal Form: THROUGH-HOLE; No. of Terminals: 8; Package Code: DIP; Package Shape: RECTANGULAR;
BAV99
NXP Semiconductors
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;
2N2222A
New Jersey Semiconductor Products
NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Collector Current (IC): .8 A; Package Shape: ROUND;
Philips Semiconductors
NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .8 A;
LM358N by Texas Instruments is an operational amplifier with 2 functions, offering a max input offset voltage of 9000 uV and a nominal common mode reject ratio of 85 dB. Widely used in commercial applications, it operates at temperatures ranging from 0 to 70 °C and has a unity gain bandwidth of 1000 kHz.
National Semiconductor
RC0603FR-071KL
Yageo
Yageo's RC0603FR-071KL is a fixed resistor with 1000 ohm resistance, 1% tolerance, and 0.1 W power dissipation. Ideal for surface mount applications in electronics, it operates b/w -55 to 155 °C with a temperature coefficient of 100 ppm/°C.
1N4148WS
First Components International
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
SS14
Sangdest Microelectronics (Nanjing)
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: C BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
LD1117S33TR
STMicroelectronics
LD1117S33TR by STMicroelectronics is a fixed positive single output LDO regulator with a nominal output voltage of 3.3V and max output current of 1.3A. It has a small outline package style, operates at an adjustable temperature range from 0 to 125°C, and is ideal for applications requiring stable voltage regulation in compact electronic devices.
FT232RQ-REEL
FTDI
FTDI's FT232RQ-REEL is a USB bus controller with 32 terminals, operating at 3.3-5.25V. It supports data transfer rates up to 60MBps and clock frequency of 12.02MHz, suitable for RS232/RS422/RS485 interfaces in various applications like industrial automation and communication systems.
1N4148
Gulf Semiconductor
RECTIFIER DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;
LM2931Z-5.0RPG
Onsemi
LM2931Z-5.0RPG by Onsemi is a Fixed Positive Single Output LDO Regulator with 5V Nominal Output Voltage, 0.1A Max Output Current, and 6V Min Input Voltage. It operates in temperatures ranging from -40 to 125 °C and is ideal for applications requiring stable voltage regulation in electronic circuits.
Won-top Electronics
FDLL4148
Fairchild Semiconductor
RECTIFIER DIODE; Terminal Position: END; Terminal Form: WRAP AROUND; No. of Terminals: 2; Surface Mount: YES; Package Shape: ROUND;
Diotec Semiconductor Ag
NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 250 MHz; Maximum Collector Current (IC): .6 A; Maximum Time At Peak Reflow Temperature (s): 10;
Sun Wai Electronic
RECTIFIER DIODE; Surface Mount: NO; Maximum Output Current: .15 A; Terminal Finish: Tin/Lead (Sn/Pb); Maximum Reverse Recovery Time: .004 us; Maximum Repetitive Peak Reverse Voltage: 100 V;
2N7002
General Semiconductor
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; JEDEC-95 Code: TO-236AB; Qualification: Not Qualified; Package Style (Meter): SMALL OUTLINE;
LM317T/NOPB
LM317T/NOPB by Texas Instruments is an adjustable positive single output standard regulator with a max output voltage of 37V and max input-output voltage differential of 40V. It operates in temperatures ranging from 0 to 125°C, making it suitable for various applications requiring precise voltage regulation in electronic circuits. The package style is flange mount with three terminals for easy installation.
NGTB15N120FLWG
NGTB15N120FLWG by Onsemi is an N-CHANNEL IGBT with 156W power dissipation, 1200V collector-emitter voltage, and 30A collector current. Ideal for high-power applications requiring efficient switching capabilities at up to 150°C operating temperature.
FGD3040G2-F085
FGD3040G2-F085 by Onsemi is an N-CHANNEL IGBT with a max Collector-Emitter Voltage of 390V and Max Power Dissipation of 150W. It is designed for AUTOMOTIVE IGNITION applications, featuring a built-in diode and resistor in a surface-mount package style.
AUIRG4BC30U-S
International Rectifier
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 100 W; Maximum Collector Current (IC): 23 A; Qualification: Not Qualified;
IKD06N60RAATMA2
Infineon Technologies
IKD06N60RAATMA2 by Infineon is an N-CHANNEL IGBT with 600V max collector-emitter voltage and 12A max collector current. It has a turn-off time of 335ns and turn-on time of 22ns, making it suitable for applications requiring fast switching such as motor drives and power supplies. AEC-Q101 certified, it comes in a small outline package with gull wing terminals for surface mount assembly.
FGH40T65SPD_F155
FGH40T65SPD_F155 by Onsemi is an N-CHANNEL IGBT with 650V VCE, 80A IC, and 267W Ptot. Ideal for power control applications, it features a built-in diode, 56ns toff, and operates up to 175°C.
IRG4PC40UD-E
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Collector Current (IC): 40 A; JEDEC-95 Code: TO-247AD; Package Body Material: PLASTIC/EPOXY;
IRG7PH35UD-EP
IRG7PH35UD-EP by Infineon Technologies is an N-channel IGBT with a max collector-emitter voltage of 1200V and a max gate-emitter voltage of 30V. It has a power dissipation of 180W and is designed for power control applications. With a rise time of 30ns and fall time of 105ns, it offers efficient switching performance in through-hole package style.
FS150R12KT3
Eupec & Kg
N-CHANNEL; Configuration: BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR; Surface Mount: NO; Maximum Collector Current (IC): 200 A; Package Body Material: UNSPECIFIED; Maximum Collector-Emitter Voltage: 1200 V;
MG06100S-BR1MM
Littelfuse
The Littelfuse MG06100S-BR1MM is a N-CHANNEL IGBT with 2 SERIES CONNECTED elements. It has a max voltage of 600V, max current of 150A, and turn off time of 390ns. Ideal for POWER CONTROL applications, it operates b/w -40 to 150°C with UL RECOGNIZED standard compliance.
FGD5T120SH
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 69 W; Maximum Collector Current (IC): 10 A; Case Connection: COLLECTOR;
IRG7PH42UD1-EP
IRG7PH42UD1-EP by Infineon Technologies is an N-channel insulated gate bipolar transistor (IGBT) with a max collector-emitter voltage of 1200V. It has a max power dissipation of 313W and is designed for power control applications. The transistor has a rectangular package shape and a through-hole terminal form.
IXGH32N170A
IXGH32N170A by Littelfuse is an N-CHANNEL IGBT with 1700V max collector-emitter voltage, 32A max collector current, and 370ns nominal turn-off time. Ideal for motor control applications due to its single configuration and flange mount package style.
IXGA20N120A3-TRL
IXYS Corporation
IXGA20N120A3-TRL by IXYS Corp is a N-CHANNEL IGBT with VCEsat of 2.5V, IC of 40A, and Pmax of 180W. Ideal for POWER CONTROL applications due to its fast ton of 66ns and high VCE rating of 1200V. This surface mount device operates b/w -55 to +150 °C for efficient power management.
HGTG20N60B3D
Intersil
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 165 W; Maximum Collector Current (IC): 40 A; Maximum Fall Time (tf): 200 ns;
FF300R12MS4BOSA1
FF300R12MS4BOSA1 by Infineon Technologies is an N-CHANNEL IGBT with 2 SERIES CONNECTED elements, a max voltage of 1200V, and a current rating of 370A. It has a turn-off time of 590ns and a turn-on time of 180ns, making it suitable for high-power applications like industrial motor drives and renewable energy systems.
STGWA40H65DFB2
STGWA40H65DFB2 by STMicroelectronics is an N-CHANNEL IGBT with 650V VCE, 72A IC, and 230W power dissipation. Ideal for power control applications due to its fast turn-off time of 158ns and built-in diode configuration. Operates b/w -55°C to 175°C temperature range in a rectangular package style.
FGH40N60SFDTU_F085
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 290 W; Maximum Collector Current (IC): 80 A; No. of Elements: 1;
CM600DU-12NFH
Powerex
N-CHANNEL; Configuration: SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Collector Current (IC): 600 A; Maximum Collector-Emitter Voltage: 1200 V; Terminal Form: UNSPECIFIED;
FP100R12KT4B11BOSA1
Infineon's FP100R12KT4B11BOSA1 is an N-CHANNEL IGBT with 1200V max collector-emitter voltage, 620ns turn-off time, and 210ns turn-on time. Its complex configuration and isolated case connection make it ideal for high-power applications in industries like automotive and renewable energy.
IRG4BC30S-STRLP
IRG4BC30S-STRLP by Infineon Technologies is an N-CHANNEL IGBT with a max Collector-Emitter Voltage of 600V and a Max Collector Current of 34A. It has a Nominal Turn Off Time of 1550ns and Nominal Turn On Time of 40ns, making it ideal for POWER CONTROL applications requiring fast switching speeds. This IGBT comes in a RECTANGULAR package style with GULL WING terminals, suitable for surface mount assembly in various electronic devices.
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IKD04N60RATMA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 75 W; Maximum Collector Current (IC): 8 A; Terminal Form: GULL WING;
IKD04N60RFATMA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Collector Current (IC): 8 A; JEDEC-95 Code: TO-252; No. of Elements: 1;
IKD06N60RATMA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 100 W; Maximum Collector Current (IC): 12 A; Package Style (Meter): SMALL OUTLINE;
IKD06N60RFATMA1
N-CHANNEL; Surface Mount: YES; Maximum Power Dissipation (Abs): 100 W; Maximum Collector Current (IC): 12 A; Maximum Operating Temperature: 175 Cel; Maximum Collector-Emitter Voltage: 600 V;
IKD04N60RAATMA1
N-Channel; Maximum Power Dissipation (Abs): 75 W; Maximum Collector Current (IC): 8 A; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED; Transistor Element Material: SILICON; Maximum VCEsat: 2.1 V;
IKD04N60RFAATMA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Collector Current (IC): 8 A; Terminal Form: GULL WING; JESD-30 Code: R-PSSO-G2;
IKD04N60RFBTMA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 75 W; Maximum Collector Current (IC): 8 A; Transistor Element Material: SILICON;
IKD06N65ET6ARMA1
Insulated Gate Bipolar Transistors; Peak Reflow Temperature (C): NOT SPECIFIED; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED;
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Collector Current (IC): 12 A; Package Style (Meter): SMALL OUTLINE; No. of Terminals: 2;
IKD06N60RFAATMA1
IKD06N60RFAATMA1 by Infineon Technologies is an N-CHANNEL IGBT with a max VCEsat of 2.5V and a max collector-emitter voltage of 600V. It is used for power control applications and has a small outline package style, making it suitable for surface mount designs.
IKD06N60R
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 100 W; Maximum Collector Current (IC): 12 A; Transistor Application: POWER CONTROL;
IKD03N60RFATMA1
IKD03N60RFATMA1 by Infineon is an N-CHANNEL IGBT with 600V max collector-emitter voltage and 5A max collector current. It has a built-in diode, 265ns turn-off time, and is ideal for power control applications requiring fast switching speeds in surface mount configurations.
IKD06N60RA
N-CHANNEL; Surface Mount: YES; Maximum Power Dissipation (Abs): 100 W; Maximum Collector Current (IC): 12 A; Maximum Gate-Emitter Voltage: 20 V; Maximum Collector-Emitter Voltage: 500 V;
IKD04N60RBTMA1
IKD03N60RFA
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 53.6 W; Maximum Collector Current (IC): 5 A; Minimum Operating Temperature: -40 Cel;
IKD03N60RFBTMA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 53.6 W; Maximum Collector Current (IC): 5 A; JESD-30 Code: R-PSSO-G2;
IKD04N60RC2
N-Channel; Maximum Power Dissipation (Abs): 36.6 W; Maximum Collector Current (IC): 8 A; Maximum Gate-Emitter Threshold Voltage: 5.7 V; Minimum Operating Temperature: -40 Cel; Maximum Operating Temperature: 175 Cel;
IKD04N60RF
IKD04N60R
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 75 W; Maximum Collector Current (IC): 8 A; Peak Reflow Temperature (C): 260;
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