Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
Discover essential electronic components for your devices, including CPU accelerators, system cache controllers, computer processors, motherboards, and graphics computing systems. Enhance device performance and connectivity with reliable components engineered for seamless integration and optimal functionality.
Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
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IKD04N60RAATMA1 by Infineon is an N-Channel IGBT with VCEsat of 2.1V, toff of 342ns, and Pmax of 75W. Ideal for high-power applications requiring a max VCE of 600V, such as motor drives and power supplies. Operating temperatures range from -40°C to 175°C.
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N-Channel IGBTs have higher input impedance and fast switching speeds, making them suitable for high-frequency applications.
Low VCEsat reduces power dissipation and improves efficiency of the device.
Fast turn-off time ensures quick switching and minimal switching losses.
High power dissipation capability allows the device to handle high power loads without overheating.
Wide operating temperature range enables the IGBT to be used in various environmental conditions.
High maximum collector-emitter voltage makes the IGBT suitable for high voltage applications.
Silicon-based IGBTs offer high voltage capability and better thermal performance.
Higher gate-emitter voltage provides robust turn-on and turn-off characteristics.
Low minimum operating temperature allows the IGBT to operate in cold environments.
High collector current rating allows the IGBT to handle high current loads efficiently.
Lower gate-emitter threshold voltage ensures reliable turn-on and turn-off operation.
Fast turn-on time enables quick response and efficient power delivery.
Insulated Gate Bipolar Transistors (IGBT) IKD04N60RAATMA1 attributes and parameters. Explore more Insulated Gate Bipolar Transistors (IGBT) devices from Infineon Technologies
Maximum Collector Current (IC):
Maximum Collector-Emitter Voltage:
Maximum Gate-Emitter Threshold Voltage:
Maximum Gate-Emitter Voltage:
Maximum Operating Temperature:
Minimum Operating Temperature:
Peak Reflow Temperature (C):
Polarity or Channel Type:
Maximum Power Dissipation (Abs):
Maximum Time At Peak Reflow Temperature (s):
Transistor Element Material:
Nominal Turn Off Time (toff):
Nominal Turn On Time (ton):
Maximum VCEsat:
IKD04N60RAATMA1 Transistors trade compliance attributes, and parameters.
ECCN
EAR99
ECCN Governance
EAR
Infineon Technologies AG is a leading global semiconductor manufacturer and provider of comprehensive solutions for automotive, industrial, and consumer applications. Founded in 1999, the company has grown to become one of the largest semiconductor manufacturers in Europe. Infineon is headquartered in Neubiberg, Germany with operations across countries in Europe and Asia Pacific. Infineon provides microelectronics products that address many of today's societal challenges affecting energy efficiency, mobility, security and connectivity. Over the past two decades Infineon has become a major player in the semiconductor industry with an impressive portfolio of innovative technologies. As one of only four companies that produce DRAM chips for automobiles, Infineon produces cutting-edge processors for use in advanced driver assistance systems (ADAS). Likewise, they specialize in providing advanced embedded secure microcontrollers that are essential for connected devices. Furthermore, they offer integrated circuit solutions for industrial power control such as motor controllers and embedded gate drivers.
CEO
Jochen Hanebeck
Chief Financial Officer
Sven Schneider
Chief Marketing Officer
Andreas Urschitz
Villach 300mm
Fabrication
Fab Initiation
2011
Austria
Villach
Wafer Capacity
11,000
Kulim 2
2016
Malaysia
Kulim
79,500
Dresden - Module 3
1999
Germany
Dresden
58,000
Villach Building
2,000
Regensburg
1986
60,000
Dresden 200 - Module 1
1995
28,000
Dresden 200 - Module 2
1996
Building 38
2005
500
Building 47
Kulim 1
2006
110,000
Mesa Facility
1990
USA
Mesa
3,000
Villach 150mm
1981
35,000
Villach 200mm
68,000
Temecula
30,000
2021
2018
5,000
Kulim 3
2024
Fab 25
Austin
31,000
Dresden - Module 4
2026
261
New England Microwave
Other Interface ICs; No. of Terminals: 14; Package Equivalence Code: FL14(UNSPEC); Power Supplies (V): +-5,-15; Package Body Material: PLASTIC/EPOXY; Surface Mount: YES;
LM7805CT
Integrated Circuit Technology
Other Regulators; No. of Terminals: 3; Maximum Input Voltage Absolute: 35 V; Maximum Voltage Tolerance: 5 %; Terminal Position: SINGLE; Operating Temperature (TJ-Min): 0 Cel;
BSS138
Infineon Technologies
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .36 W; Maximum Drain Current (Abs) (ID): .2 A; Maximum Feedback Capacitance (Crss): 8 pF;
SMBJ18CA
Eic Semiconductor
TRANS VOLTAGE SUPPRESSOR DIODE; Terminal Position: DUAL; Terminal Form: C BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
BAV99
Taiwan Semiconductor
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;
LL4148
Synsemi
RECTIFIER DIODE; Terminal Position: END; Terminal Form: WRAP AROUND; No. of Terminals: 2; Surface Mount: YES; Package Shape: ROUND;
Allegro MicroSystems
RECTIFIER DIODE; Terminal Position: END; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;
2N7002
Motorola
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Package Body Material: PLASTIC/EPOXY; Qualification: Not Qualified; Minimum Operating Temperature: -55 Cel;
LM358N
National Semiconductor
OPERATIONAL AMPLIFIER; Temperature Grade: COMMERCIAL; Terminal Form: THROUGH-HOLE; No. of Terminals: 8; Package Code: DIP; Package Shape: RECTANGULAR;
1N4148WS
Changzhou Galaxy Century Microelectronics
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
FDN5618P
Fairchild Semiconductor
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .5 W; Transistor Element Material: SILICON; Moisture Sensitivity Level (MSL): 1;
MBRA340T3G
Onsemi
MBRA340T3G by Onsemi is a Schottky rectifier diode with 40V reverse test voltage and 3A max output current. Ideal for power applications, it operates b/w -55 to 150°C, features matte tin terminal finish, and comes in a small outline package.
DS18B20U+
Maxim Integrated
TEMPERATURE SENSOR,SWITCH/DIGITAL OUTPUT,SERIAL; Mounting Feature: SURFACE MOUNT; No. of Terminals: 8; Package Shape or Style: SQUARE; Housing: PLASTIC; Minimum Supply Voltage: 3 V;
E8WSDC12-32.768KTR
Ecliptek
PARALLEL - FUNDAMENTAL; Mounting Feature: SURFACE MOUNT; Frequency Tolerance: 20 ppm; Aging: 3 PPM/YEAR; Load Capacitance: 12.5 pF; Nominal Operating Frequency: .032768 MHz;
ULN2803A
YOUTAI SEMICONDUCTOR CO LTD
BUFFER OR INVERTER BASED PERIPHERAL DRIVER; Terminal Form: GULL WING; No. of Terminals: 18; Package Code: SOP; Package Shape: RECTANGULAR; JESD-30 Code: R-PDSO-G18;
LM358AN
Texas Instruments
LM358AN by Texas Instruments is an Operational Amplifier with 2 functions. It has a Max Input Offset Voltage of 5000 uV and Nominal Common Mode Reject Ratio of 85 dB. Widely used in voltage-feedback applications due to its high Min Voltage Gain of 15000 and Unity Gain Bandwidth of 1000 kHz.
1N4148
Rochester Electronics
RECTIFIER DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;
2N2222A
Baneasa S A
NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 250 MHz; Maximum Collector Current (IC): .8 A; Qualification: Not Qualified;
Panjit International
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Drain-Source On Resistance: 3 ohm; Minimum DS Breakdown Voltage: 50 V; Terminal Form: GULL WING;
1N4148WT
Surge Components
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: FLAT; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
STGD5NB120SZT4
STMicroelectronics
STGD5NB120SZT4 by STMicroelectronics is an N-CHANNEL IGBT with 1200V max collector-emitter voltage, 10A max collector current, and 55W max power dissipation. Ideal for power control applications due to its single configuration with built-in diode and resistor. It comes in a small outline package shape suitable for surface mount assembly.
IXXX160N65B4
Littelfuse
IXXX160N65B4 by Littelfuse is an N-CHANNEL IGBT with 650V VCE, 310A IC, and 1.8V VCEsat. Ideal for POWER CONTROL applications, it has a TOFF of 380ns and TON of 93ns. Suitable for high-power systems requiring efficient switching capabilities.
NGTB40N120FL3WG
NGTB40N120FL3WG by Onsemi is an N-CHANNEL IGBT transistor with a max VCEsat of 1.95V and a max collector-emitter voltage of 1200V. It is designed for power control applications, featuring a nominal turn off time of 326ns and a max operating temperature of 175°C.
FGH40N65UFDTU
FGH40N65UFDTU by Onsemi is an N-CHANNEL IGBT with 650V VCEsat, 80A IC, and 290W power dissipation. Ideal for power control applications, it features a built-in diode, 152ns turn-off time, and operates b/w -55 to 150°C.
FS200R12KT4RB11BOSA1
Infineon's FS200R12KT4RB11BOSA1 is a N-CHANNEL IGBT with 6 elements, built-in diode, and thermistor. It has a max voltage of 1200V and max current of 280A for power control applications. UL approved, it features a turn off time of 600ns and turn on time of 190ns in a flange mount package.
IRG7PH42UD2PBF
IRG7PH42UD2PBF by Infineon Technologies is an N-CHANNEL IGBT with a max collector-emitter voltage of 1200V and a max gate-emitter voltage of 30V. It is designed for power control applications and has a max power dissipation of 321W.
FZ1000R33HE3BPSA1
Infineon's FZ1000R33HE3BPSA1 is a N-CHANNEL IGBT with 2 elements in parallel. It has a max collector current of 1000A and turn off time of 3550ns, suitable for power control applications. The transistor operates at a max voltage of 3300V, featuring silicon material and isolated case connection.
FGH80N60FD2TU
FGH80N60FD2TU by Onsemi is an N-CHANNEL IGBT with 600V max collector-emitter voltage, 80A max collector current, and 290W max power dissipation. Ideal for power control applications, it features a single configuration with built-in diode and offers fast switching times of 74ns turn on and 100ns fall time.
IRGB4062DPBF
International Rectifier
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 250 W; Maximum Collector Current (IC): 48 A; JESD-609 Code: e3;
FF600R12ME4B11BPSA1
Infineon Technologies' FF600R12ME4B11BPSA1 is a N-CHANNEL IGBT with 2 SERIES CONNECTED elements, built-in diode, and thermistor. It has a max voltage of 1200V and current of 995A, ideal for power control applications. Featuring a turn off time of 770ns and turn on time of 310ns, it is UL RECOGNIZED and comes in a FLANGE MOUNT package style.
STGWT40HP65FB
STGWT40HP65FB by STMicroelectronics is an N-CHANNEL IGBT with VCEsat of 2V, IC of 80A, and Pmax of 283W. Ideal for power control applications, it has a toff of 202ns and ton of 169ns. Suitable for high-power systems operating b/w -55°C to 175°C.
FS400R07A1E3
FS400R07A1E3 by Infineon Technologies is an N-CHANNEL IGBT with a max VCEsat of 1.9V and a max collector current (IC) of 500A. It is used for power control applications and has a package style of FLANGE MOUNT.
IXXX100N60B3H1
IXXX100N60B3H1 by Littelfuse is an N-CHANNEL IGBT with a max VCEsat of 1.8V and a collector current of 200A. Ideal for power control applications, it has a built-in diode, operates at temperatures up to 150°C, and features a turn-off time of 350ns.
IRG7PH42UDPBF
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 320 W; Maximum Collector Current (IC): 85 A; Qualification: Not Qualified;
FGL40N120ANDTU
FGL40N120ANDTU by Onsemi is an N-CHANNEL IGBT transistor with a max collector-emitter voltage of 1200V and a max collector current of 64A. It has a nominal turn-off time of 165ns and a turn-on time of 45ns, making it ideal for power control applications requiring fast switching capabilities. The transistor comes in a rectangular package style with flange mount and matte tin terminal finish.
SK20DGDL065ET
Semikron International
SK20DGDL065ET by Semikron International is an N-CHANNEL IGBT with 600V VCEsat, 24A IC, and 190ns toff. Ideal for POWER CONTROL applications due to its complex configuration and SILICON material. Package style is FLANGE MOUNT with 23 terminals and operates up to 150°C.
SGP10N60RUFDTU
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 75 W; Maximum Collector Current (IC): 16 A; Additional Features: LOW CONDUCTION LOSS, HIGH SPEED SWITCHING;
FS75R12KT3BOSA1
Infineon FS75R12KT3BOSA1 is a N-CHANNEL IGBT with 6 elements, built-in diode, and thermistor. It has a max voltage of 1200V, current of 105A, and turn-off time of 610ns. Ideal for applications requiring high power efficiency in industrial systems like motor drives and renewable energy converters.
IFF600B12ME4PB11BPSA1
Infineon Technologies IFF600B12ME4PB11BPSA1 is a N-CHANNEL IGBT with 2 elements, built-in diode, and thermistor. It has a max Vce of 1200V, toff of 750ns, and ton of 250ns. Ideal for power control applications due to UL recognition and isolated case connection.
2MBI150NC-120
Collmer Semiconductor
N-CHANNEL; Configuration: SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND CUR LIMITING CIRCUIT; Surface Mount: NO; Maximum Collector Current (IC): 150 A; JESD-30 Code: R-XUFM-X7; Package Style (Meter): FLANGE MOUNT;
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IKD04N60RATMA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 75 W; Maximum Collector Current (IC): 8 A; Terminal Form: GULL WING;
IKD04N60RFATMA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Collector Current (IC): 8 A; JEDEC-95 Code: TO-252; No. of Elements: 1;
IKD06N60RATMA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 100 W; Maximum Collector Current (IC): 12 A; Package Style (Meter): SMALL OUTLINE;
IKD06N60RFATMA1
N-CHANNEL; Surface Mount: YES; Maximum Power Dissipation (Abs): 100 W; Maximum Collector Current (IC): 12 A; Maximum Operating Temperature: 175 Cel; Maximum Collector-Emitter Voltage: 600 V;
IKD04N60RFAATMA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Collector Current (IC): 8 A; Terminal Form: GULL WING; JESD-30 Code: R-PSSO-G2;
IKD04N60RFBTMA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 75 W; Maximum Collector Current (IC): 8 A; Transistor Element Material: SILICON;
IKD06N65ET6ARMA1
Insulated Gate Bipolar Transistors; Peak Reflow Temperature (C): NOT SPECIFIED; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED;
IKD06N60RAATMA2
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Collector Current (IC): 12 A; Package Style (Meter): SMALL OUTLINE; No. of Terminals: 2;
IKD06N60RAATMA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Collector Current (IC): 12 A; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED; Package Body Material: PLASTIC/EPOXY;
IKD06N60RFAATMA1
IKD06N60RFAATMA1 by Infineon Technologies is an N-CHANNEL IGBT with a max VCEsat of 2.5V and a max collector-emitter voltage of 600V. It is used for power control applications and has a small outline package style, making it suitable for surface mount designs.
IKD06N60R
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 100 W; Maximum Collector Current (IC): 12 A; Transistor Application: POWER CONTROL;
IKD03N60RFATMA1
IKD03N60RFATMA1 by Infineon is an N-CHANNEL IGBT with 600V max collector-emitter voltage and 5A max collector current. It has a built-in diode, 265ns turn-off time, and is ideal for power control applications requiring fast switching speeds in surface mount configurations.
IKD06N60RA
N-CHANNEL; Surface Mount: YES; Maximum Power Dissipation (Abs): 100 W; Maximum Collector Current (IC): 12 A; Maximum Gate-Emitter Voltage: 20 V; Maximum Collector-Emitter Voltage: 500 V;
IKD04N60RBTMA1
IKD03N60RFA
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 53.6 W; Maximum Collector Current (IC): 5 A; Minimum Operating Temperature: -40 Cel;
IKD03N60RFBTMA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 53.6 W; Maximum Collector Current (IC): 5 A; JESD-30 Code: R-PSSO-G2;
IKD04N60RC2
N-Channel; Maximum Power Dissipation (Abs): 36.6 W; Maximum Collector Current (IC): 8 A; Maximum Gate-Emitter Threshold Voltage: 5.7 V; Minimum Operating Temperature: -40 Cel; Maximum Operating Temperature: 175 Cel;
IKD04N60RF
IKD04N60R
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 75 W; Maximum Collector Current (IC): 8 A; Peak Reflow Temperature (C): 260;
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