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IKY40N120CS6XKSA1

Infineon Technologies

IKY40N120CS6XKSA1 by Infineon Technologies

IKY40N120CS6XKSA1 by Infineon: N-Channel IGBT with VCEsat of 2.15V, IC of 80A, and Pdiss of 500W. Ideal for high-power applications like motor drives and renewable energy systems due to its high voltage rating and fast switching times.

Median Price

$6.600

Lifecycle Status

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12

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1k+

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Chip1Stop

Japan . 240 parts In-Stock

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$6.380

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$6.380

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DigiKey

USA . 713 parts In-Stock

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$6.600

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$3.773

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$2.695

10k+ parts

$2.656

713

$6.600

$3.773

$2.695

$2.656

Mouser Electronics

USA . 241 parts In-Stock

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$6.600

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$3.160

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$3.040

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241

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Arrow

USA . 325 parts In-Stock

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$6.997

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$4.208

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$3.576

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$6.997

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$3.576

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Element14

Singapore . 349 parts In-Stock

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$7.589

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$4.291

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$4.046

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349

$7.589

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Newark

USA . 50 parts In-Stock

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$7.720

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$4.480

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$3.990

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$7.720

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$3.990

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Farnell

UK . 349 parts In-Stock

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$8.018

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$4.304

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$4.150

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$8.018

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$4.150

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Verical

USA . 240 parts In-Stock

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$2.941

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$2.611

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$2.611

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RS (Exports)

UK . 226 parts In-Stock

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$5.290

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226

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Digiode

USA . 23 parts In-Stock

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$5.909

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Nova Conductors

Japan . 50 parts In-Stock

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Vyrian

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Modulus Dynamics

Lithuania . 14,753 parts In-Stock

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$0.529

100+ parts

$0.508

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$0.487

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14,753

$0.529

$0.508

$0.487

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Aztec Data Supply Inc.

USA . 317 parts In-Stock

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$0.533

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$0.533

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Advanced Electronics

New Zealand . 450 parts In-Stock

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$1.053

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$1.000

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$1.000

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$1.053

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Corohmni

South Africa . 44 parts In-Stock

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$1.181

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Ampacity Inc.

Singapore . 163 parts In-Stock

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$3.130

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Semicontronic

India . 61 parts In-Stock

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$3.130

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$3.052

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$3.036

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$3.130

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Corphita

USA . 567 parts In-Stock

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$5.598

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Continental Prestige Electronics

USA . 480 parts In-Stock

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$6.830

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$4.670

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QUARKTWIN TECHNOLOGY LTD

USA . 27,607 parts In-Stock

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Microchip USA

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Authorized Procurement Solutions

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Argo Parts USA

USA . 328 parts In-Stock

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Bastille Electronics

Australia . 300 parts In-Stock

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Overview

Experience the next level of performance and reliability with the IKY40N120CS6XKSA1 by Infineon Technologies. As a leading manufacturer in the industry, Infineon Technologies ensures top-notch quality and innovation in their products. This Insulated Gate Bipolar Transistor (IGBT) offers unparalleled benefits, from its N-Channel design to its high maximum collector-emitter voltage of 1200V. With a maximum power dissipation of 500W and a wide operating temperature range, this IGBT is ideal for a variety of applications. Trust in Infineon Technologies to deliver value and efficiency with the IKY40N120CS6XKSA1.

Feature Benefit Bullets

Polarity or Channel Type: N-Channel

N-channel IGBTs typically have faster switching speeds and higher efficiency compared to P-channel IGBTs, making this product a good choice for high-power applications.

Maximum VCEsat: 2.15 V

Low VCEsat value indicates minimal voltage drop across the transistor when conducting, leading to lower power losses and improved efficiency in power applications.

Nominal Turn Off Time (toff): 445 ns

Fast turn-off time enables efficient switching operations and reduces switching losses, making this IGBT suitable for high-frequency applications.

Maximum Power Dissipation (Abs): 500 W

High power dissipation rating allows the IGBT to handle large amounts of power without overheating, making it reliable for high-power industrial applications.

Maximum Operating Temperature: 175 °C

Wide operating temperature range makes this IGBT suitable for use in various environments and allows for reliable performance under different temperature conditions.

Maximum Collector-Emitter Voltage: 1200 V

High VCE voltage rating makes this IGBT suitable for high-voltage applications, where it can withstand large voltages without breakdown.

Transistor Element Material: SILICON

Silicon-based IGBTs offer good thermal performance, high breakdown voltage, and high switching speed, making them a reliable choice for high-power applications.

Maximum Gate-Emitter Voltage: 20 V

High gate-emitter voltage rating ensures the stability and reliability of the IGBT during switching operations, making it suitable for high-power and high-frequency applications.

Minimum Operating Temperature: -40 °C

Wide temperature range allows the IGBT to operate in extreme cold environments, making it versatile for use in various industrial applications.

Maximum Collector Current (IC): 80 A

High collector current rating enables the IGBT to handle large currents without overheating, making it suitable for high-power applications that require high current handling capabilities.

Maximum Gate-Emitter Threshold Voltage: 6.3 V

Low gate-emitter threshold voltage ensures efficient switching operations and reduces power losses, making this IGBT ideal for high-efficiency applications.

Terminal Finish: TIN

Tin terminal finish provides good solderability and reliability in various industrial environments, ensuring a secure connection for the IGBT in electronic circuits.

Nominal Turn On Time (ton): 56 ns

Fast turn-on time enables quick response and efficient switching, making this IGBT suitable for high-speed applications that require rapid switching operations.

Technical Specifications

Insulated Gate Bipolar Transistors (IGBT) IKY40N120CS6XKSA1 attributes and parameters. Explore more Insulated Gate Bipolar Transistors (IGBT) devices from Infineon Technologies

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

1200 V

Maximum Gate-Emitter Threshold Voltage:

6.3 V

Maximum Gate-Emitter Voltage:

20 V

JESD-609 Code:

e3

Maximum Operating Temperature:

175 Cel

Minimum Operating Temperature:

-40 Cel

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Terminal Finish:

TIN

Transistor Element Material:

SILICON

Nominal Turn Off Time (toff):

445 ns

Nominal Turn On Time (ton):

56 ns

Maximum VCEsat:

2.15 V

Trade Compliance

IKY40N120CS6XKSA1 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Infineon Technologies

Infineon Technologies AG is a leading global semiconductor manufacturer and provider of comprehensive solutions for automotive, industrial, and consumer applications. Founded in 1999, the company has grown to become one of the largest semiconductor manufacturers in Europe. Infineon is headquartered in Neubiberg, Germany with operations across countries in Europe and Asia Pacific. Infineon provides microelectronics products that address many of today's societal challenges affecting energy efficiency, mobility, security and connectivity. Over the past two decades Infineon has become a major player in the semiconductor industry with an impressive portfolio of innovative technologies. As one of only four companies that produce DRAM chips for automobiles, Infineon produces cutting-edge processors for use in advanced driver assistance systems (ADAS). Likewise, they specialize in providing advanced embedded secure microcontrollers that are essential for connected devices. Furthermore, they offer integrated circuit solutions for industrial power control such as motor controllers and embedded gate drivers.

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Management team

CEO

Jochen Hanebeck

Chief Financial Officer

Sven Schneider

Chief Marketing Officer

Andreas Urschitz

Manufacturer fab locations 19

Fab name Location Fab Initiation Wafer Capacity

Villach 300mm

Fabrication

Fab Initiation

2011

Austria

Villach

Wafer Capacity

11,000

2011

11,000

Kulim 2

Fabrication

Fab Initiation

2016

Malaysia

Kulim

Wafer Capacity

79,500

2016

79,500

Dresden - Module 3

Fabrication

Fab Initiation

1999

Germany

Dresden

Wafer Capacity

58,000

1999

58,000

Villach Building

Fabrication

Fab Initiation

2016

Austria

Villach

Wafer Capacity

2,000

2016

2,000

Regensburg

Fabrication

Fab Initiation

1986

Germany

Regensburg

Wafer Capacity

60,000

1986

60,000

Dresden 200 - Module 1

Fabrication

Fab Initiation

1995

Germany

Dresden

Wafer Capacity

28,000

1995

28,000

Dresden 200 - Module 2

Fabrication

Fab Initiation

1996

Germany

Dresden

Wafer Capacity

28,000

1996

28,000

Building 38

Fabrication

Fab Initiation

2005

Germany

Dresden

Wafer Capacity

500

2005

500

Building 47

Fabrication

Fab Initiation

2005

Germany

Dresden

Wafer Capacity

500

2005

500

Kulim 1

Fabrication

Fab Initiation

2006

Malaysia

Kulim

Wafer Capacity

110,000

2006

110,000

Mesa Facility

Fabrication

Fab Initiation

1990

USA

Mesa

Wafer Capacity

3,000

1990

3,000

Villach 150mm

Fabrication

Fab Initiation

1981

Austria

Villach

Wafer Capacity

35,000

1981

35,000

Villach 200mm

Fabrication

Fab Initiation

1995

Austria

Villach

Wafer Capacity

68,000

1995

68,000

Temecula

Fabrication

Fab Initiation

1995

USA

Temecula

Wafer Capacity

30,000

1995

30,000

Villach 300mm

Fabrication

Fab Initiation

2021

Austria

Villach

Wafer Capacity

2021

Villach 150mm

Fabrication

Fab Initiation

2018

Austria

Villach

Wafer Capacity

5,000

2018

5,000

Kulim 3

Fabrication

Fab Initiation

2024

Malaysia

Kulim

Wafer Capacity

2024

Fab 25

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

31,000

1995

31,000

Dresden - Module 4

Fabrication

Fab Initiation

2026

Germany

Dresden

Wafer Capacity

2026

Category top products 20

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