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APTGLQ100DA120T1G

Microchip Technology

APTGLQ100DA120T1G by Microchip Technology

Microchip Technology's APTGLQ100DA120T1G is an N-CHANNEL IGBT with 1200V VCEsat, 414ns toff, and 520W power dissipation. Ideal for MOTOR CONTROL applications due to its built-in diode and thermistor. Operating temperature range from -40°C to 175°C ensures reliable performance in various environments.

Median Price

$51.114

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

< 1k

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Nova Conductors

Japan . 30 parts In-Stock

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$51.114

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VNN

France . 300 parts In-Stock

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300

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Vyrian

USA . 239 parts In-Stock

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239

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Corohmni

South Africa . 104 parts In-Stock

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$0.350

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Aztec Data Supply Inc.

USA . 1,185 parts In-Stock

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$1.180

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$1.180

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AZTECH Wire

Italy . 239 parts In-Stock

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$8.003

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Ampacity Inc.

Singapore . 830 parts In-Stock

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$13.050

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830

$13.050

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Semicontronic

India . 350 parts In-Stock

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$29.050

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$28.324

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$28.178

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350

$29.050

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Bastille Electronics

Australia . 10 parts In-Stock

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$51.110

100+ parts

$48.554

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$45.488

10

$51.110

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$45.488

Continental Prestige Electronics

USA . 2,448 parts In-Stock

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$51.114

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$50.092

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Advanced Electronics

New Zealand . 5,000 parts In-Stock

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$52.136

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$52.136

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$52.136

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Microchip USA

USA . 2,450 parts In-Stock

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$135.332

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Marpe Global Electronics

Taiwan . 3,142 parts In-Stock

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QualityLine Systems

Poland . 3,142 parts In-Stock

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XL Components Corporation

Australia . 3,142 parts In-Stock

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Argo Parts USA

USA . 3,085 parts In-Stock

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Overview

Elevate your motor control applications with the APTGLQ100DA120T1G by Microchip Technology. This top-quality Insulated Gate Bipolar Transistor (IGBT) boasts a single configuration with a built-in diode and thermistor, offering unparalleled performance and reliability. With a maximum collector-emitter voltage of 1200V and a maximum power dissipation of 520W, this transistor is designed to handle even the most demanding tasks. Trust Microchip Technology to deliver cutting-edge technology that enhances efficiency and power in your projects. Experience the difference today.

Feature Benefit Bullets

Polarity or Channel Type: N-CHANNEL

N-channel IGBTs are known for their high efficiency and fast switching speeds, making them ideal for motor control applications.

Configuration: SINGLE WITH BUILT-IN DIODE AND THERMISTOR

The built-in diode and thermistor provide additional protection and functionality, reducing the need for external components.

Transistor Application: MOTOR CONTROL

Specifically designed for motor control applications, ensuring optimal performance and reliability in such systems.

Maximum VCEsat: 2.42 V

Low VCEsat value indicates low power loss and higher efficiency in operation.

Package Shape: RECTANGULAR

Rectangular package shape allows for easy mounting and integration into electronic systems.

Nominal Turn Off Time (toff): 414 ns

Fast turn-off time helps in reducing switching losses and improving overall efficiency.

No. of Terminals: 12

Having 12 terminals allows for easy connectivity and integration within complex circuits.

Maximum Power Dissipation (Abs): 520 W

High power dissipation capability enables the transistor to handle high power loads without overheating.

Package Style (Meter): FLANGE MOUNT

Flange mount package style provides secure and stable mounting in various applications.

Maximum Operating Temperature: 175 °C

Wide operating temperature range ensures reliable performance in harsh environmental conditions.

Maximum Collector-Emitter Voltage: 1200 V

High collector-emitter voltage rating allows for handling high voltage requirements in motor control applications.

Transistor Element Material: SILICON

Silicon material offers high reliability and performance in power switching applications.

Maximum Gate-Emitter Voltage: 20 V

High gate-emitter voltage rating provides robustness and protection against voltage spikes.

Minimum Operating Temperature: -40 °C

Lowest operating temperature rating allows for operation in extremely cold environments without performance degradation.

Maximum Collector Current (IC): 170 A

High collector current rating enables the transistor to handle high current loads in motor control systems.

Maximum Gate-Emitter Threshold Voltage: 6.4 V

Having a threshold voltage of 6.4V ensures reliable turn-on operation of the transistor.

Terminal Position: UPPER

Upper terminal position makes it easier for connections and circuit layout in motor control applications.

Case Connection: ISOLATED

Isolated case connection provides additional safety and protection in high voltage applications.

Nominal Turn On Time (ton): 79 ns

Fast turn-on time allows for quick response and efficient operation in motor control systems.

Technical Specifications

Insulated Gate Bipolar Transistors (IGBT) APTGLQ100DA120T1G attributes and parameters. Explore more Insulated Gate Bipolar Transistors (IGBT) devices from Microchip Technology

Specs

Case Connection:

ISOLATED

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

1200 V

Maximum Gate-Emitter Threshold Voltage:

6.4 V

Maximum Gate-Emitter Voltage:

20 V

JESD-30 Code:

R-XUFM-X12

No. of Elements:

1

No. of Terminals:

12

Maximum Operating Temperature:

175 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

UNSPECIFIED

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Surface Mount:

NO

Terminal Form:

UNSPECIFIED

Terminal Position:

UPPER

Transistor Application:

MOTOR CONTROL

Transistor Element Material:

SILICON

Nominal Turn Off Time (toff):

414 ns

Nominal Turn On Time (ton):

79 ns

Maximum VCEsat:

2.42 V

Trade Compliance

APTGLQ100DA120T1G Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Microchip Technology

Microchip Technology Incorporated is a leading provider of integrated circuit (IC) solutions for the global market. Founded in 1989, the company designs, manufactures, tests and markets state-of-the-art microcontrollers and analog devices for use in a wide array of electronics applications, such as the automotive industry, consumer electronics and industrial automation. Through its world-class production processes and technologies, Microchip Technology has become an innovator of semiconductor solutions that enable customers to maximize their performance while streamlining costs.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President and CEO

Ganesh Moorthy

Executive Chair

Steve Sanghi

CFO, Senior VP

J. Eric Bjornholt

Manufacturer fab locations 9

Fab name Location Fab Initiation Wafer Capacity

Fab 5 - Colorado

Fabrication

Fab Initiation

1995

USA

Colorado Springs

Wafer Capacity

70,000

1995

70,000

Santa Clara

Fabrication

Fab Initiation

1990

USA

Santa Clara

Wafer Capacity

1,290

1990

1,290

Lawrence

Fabrication

Fab Initiation

1989

USA

Lawrence

Wafer Capacity

5,000

1989

5,000

Fab 4 - Gresham

Fabrication

Fab Initiation

1988

USA

Gresham

Wafer Capacity

50,000

1988

50,000

Fab 2 - Tempe

Fabrication

Fab Initiation

1994

USA

Tempe

Wafer Capacity

30,000

1994

30,000

Beverly

Fabrication

Fab Initiation

1985

USA

Beverly

Wafer Capacity

2,000

1985

2,000

Lowell

Fabrication

Fab Initiation

1986

USA

Lowell

Wafer Capacity

15,000

1986

15,000

Garden Grove

Fabrication

Fab Initiation

1985

USA

Garden Grove

Wafer Capacity

12,000

1985

12,000

New Fab - Gresham

Fabrication

Fab Initiation

2024

USA

Gresham

Wafer Capacity

2024

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