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APTGF150H120G

Microsemi

APTGF150H120G by Microsemi

APTGF150H120G by Microsemi is an N-CHANNEL IGBT with 4 elements in a bridge configuration. Ideal for motor control applications, it offers a max VCEsat of 3.7V and can handle up to 200A of collector current. With a max operating temperature of 150°C, this IGBT has a built-in diode and nominal turn-off time of 390ns.

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1k+

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VNN

France . 695 parts In-Stock

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695

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Nova Conductors

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Corohmni

South Africa . 819 parts In-Stock

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$0.774

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819

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Aztec Data Supply Inc.

USA . 863 parts In-Stock

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$1.120

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Microchip USA

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$5.031

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AZTECH Wire

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Ampacity Inc.

Singapore . 1,014 parts In-Stock

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Continental Prestige Electronics

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Bastille Electronics

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Overview

Experience the power of innovation with the APTGF150H120G by Microsemi. As a leading manufacturer in the industry, Microsemi delivers top-quality Insulated Gate Bipolar Transistors that are designed for efficiency and reliability. Ideal for motor control applications, this N-CHANNEL IGBT offers a seamless performance with its built-in diode configuration. With a maximum VCEsat of 3.7V and a collector current of 200A, this product ensures optimal functionality and durability. Trust in Microsemi to provide you with a cutting-edge solution that guarantees exceptional value and performance.

Feature Benefit Bullets

Polarity or Channel Type: N-CHANNEL

N-CHANNEL IGBTs are known for their higher efficiency and faster switching speeds, making them a good choice for motor control applications.

Configuration: BRIDGE, 4 ELEMENTS WITH BUILT-IN DIODE

The bridge configuration with built-in diode simplifies circuit design and improves efficiency in motor control applications.

Maximum VCEsat: 3.7 V

Low VCEsat value ensures minimal power loss and higher efficiency during operation.

No. of Elements: 4

Having 4 elements provides added redundancy and improved performance in high-power applications like motor control.

Maximum Power Dissipation (Abs): 961 W

High power dissipation rating allows the IGBT to handle large current loads effectively in motor control applications.

Maximum Collector-Emitter Voltage: 1200 V

High VCE allows for efficient switching and control of high voltages in motor control circuits.

Technical Specifications

Insulated Gate Bipolar Transistors (IGBT) APTGF150H120G attributes and parameters. Explore more Insulated Gate Bipolar Transistors (IGBT) devices from Microsemi

Specs

Case Connection:

ISOLATED

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

1200 V

Maximum Gate-Emitter Voltage:

20 V

JESD-30 Code:

R-XUFM-X12

JESD-609 Code:

e1

Moisture Sensitivity Level (MSL):

1

No. of Elements:

4

No. of Terminals:

12

Maximum Operating Temperature:

150 Cel

Package Body Material:

UNSPECIFIED

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Insulated Gate BIP Transistors

Surface Mount:

NO

Terminal Finish:

TIN SILVER COPPER

Terminal Form:

UNSPECIFIED

Terminal Position:

UPPER

Transistor Application:

MOTOR CONTROL

Transistor Element Material:

SILICON

Nominal Turn Off Time (toff):

390 ns

Nominal Turn On Time (ton):

190 ns

Maximum VCEsat:

3.7 V

Trade Compliance

APTGF150H120G Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Microsemi

Microsemi Corporation, a wholly owned subsidiary of Microchip Technology Inc. (Nasdaq: MCHP), offers a comprehensive portfolio of semiconductor and system solutions for communications, defense & security, aerospace and industrial markets. Products include high-performance and radiation-hardened analog mixed-signal integrated circuits, FPGAs, SoCs and ASICs; power management products; timing and synchronization devices and precise time solutions, setting the world's standard for time; voice processing devices; RF solutions; discrete components; enterprise storage and communication solutions, security technologies and scalable anti-tamper products; Ethernet solutions; Power-over-Ethernet ICs and midspans; as well as custom design capabilities and services. Microsemi is headquartered in Aliso Viejo, California.

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