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APTGF150A120T3WG

Microsemi

APTGF150A120T3WG by Microsemi

N-CHANNEL; Configuration: SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR; Surface Mount: NO; Maximum Power Dissipation (Abs): 961 W; Maximum Collector Current (IC): 210 A; Package Style (Meter): FLANGE MOUNT;

Median Price

-

Lifecycle Status

Suppliers In-Stock

0

In-Stock Inventory

< 1k

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Advanced Electronics

New Zealand . 47 parts In-Stock

1+ parts

$1.973

100+ parts

$1.795

1k+ parts

$1.618

10k+ parts

-

47

$1.973

$1.795

$1.618

-

Microchip USA

USA . 197 parts In-Stock

1+ parts

$9.708

100+ parts

-

1k+ parts

-

10k+ parts

-

197

$9.708

-

-

-

Ampacity Inc.

Singapore . 1,323 parts In-Stock

1+ parts

$46.050

100+ parts

-

1k+ parts

-

10k+ parts

-

1,323

$46.050

-

-

-

Technical Specifications

Insulated Gate Bipolar Transistors (IGBT) APTGF150A120T3WG attributes and parameters. Explore more Insulated Gate Bipolar Transistors (IGBT) devices from Microsemi

Specs

Case Connection:

ISOLATED

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

1200 V

Maximum Gate-Emitter Voltage:

20 V

JESD-30 Code:

R-XUFM-X9

No. of Elements:

2

No. of Terminals:

9

Maximum Operating Temperature:

150 Cel

Package Body Material:

UNSPECIFIED

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Peak Reflow Temperature (C):

NOT SPECIFIED

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Insulated Gate BIP Transistors

Surface Mount:

NO

Terminal Form:

UNSPECIFIED

Terminal Position:

UPPER

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Transistor Application:

POWER CONTROL

Transistor Element Material:

SILICON

Nominal Turn Off Time (toff):

390 ns

Nominal Turn On Time (ton):

190 ns

Maximum VCEsat:

3.7 V

Trade Compliance

APTGF150A120T3WG Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Microsemi

Microsemi Corporation, a wholly owned subsidiary of Microchip Technology Inc. (Nasdaq: MCHP), offers a comprehensive portfolio of semiconductor and system solutions for communications, defense & security, aerospace and industrial markets. Products include high-performance and radiation-hardened analog mixed-signal integrated circuits, FPGAs, SoCs and ASICs; power management products; timing and synchronization devices and precise time solutions, setting the world's standard for time; voice processing devices; RF solutions; discrete components; enterprise storage and communication solutions, security technologies and scalable anti-tamper products; Ethernet solutions; Power-over-Ethernet ICs and midspans; as well as custom design capabilities and services. Microsemi is headquartered in Aliso Viejo, California.

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