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IXA70I1200NA

IXYS Corporation

IXA70I1200NA by IXYS Corporation

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 350 W; Maximum Collector Current (IC): 100 A; Peak Reflow Temperature (C): NOT SPECIFIED;

Median Price

$38.800

Lifecycle Status

Suppliers In-Stock

7

In-Stock Inventory

< 1k

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Mouser Electronics

USA . 14 parts In-Stock

1+ parts

$37.360

100+ parts

$26.710

1k+ parts

$26.690

10k+ parts

-

14

$37.360

$26.710

$26.690

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Chip1Stop

Japan . 10 parts In-Stock

1+ parts

$38.800

100+ parts

$26.800

1k+ parts

$26.700

10k+ parts

-

10

$38.800

$26.800

$26.700

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Verical

USA . 10 parts In-Stock

1+ parts

$49.625

100+ parts

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10

$49.625

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Distrelec

Netherlands . 3 parts In-Stock

1+ parts

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Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Nova Conductors

Japan . 29 parts In-Stock

1+ parts

$27.694

100+ parts

-

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29

$27.694

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TME

Poland . 22 parts In-Stock

1+ parts

$40.700

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22

$40.700

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Vyrian

USA . 9 parts In-Stock

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9

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

AZTECH Wire

Italy . 505 parts In-Stock

1+ parts

$17.195

100+ parts

-

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505

$17.195

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Aranea Global

USA . 2,000 parts In-Stock

1+ parts

$27.140

100+ parts

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1k+ parts

$26.054

10k+ parts

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2,000

$27.140

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$26.054

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Ampacity Inc.

Singapore . 9 parts In-Stock

1+ parts

$31.760

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9

$31.760

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Component Stockers USA

USA . 49 parts In-Stock

1+ parts

$33.060

100+ parts

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49

$33.060

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Microchip USA

USA . 8,578 parts In-Stock

1+ parts

$81.144

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8,578

$81.144

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Argo Parts USA

USA . 2,747 parts In-Stock

1+ parts

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2,747

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Authorized Procurement Solutions

USA . 600 parts In-Stock

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600

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Perfect Parts

USA . 12 parts In-Stock

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12

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Technical Specifications

Insulated Gate Bipolar Transistors (IGBT) IXA70I1200NA attributes and parameters. Explore more Insulated Gate Bipolar Transistors (IGBT) devices from IXYS Corporation

Specs

Case Connection:

ISOLATED

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

1200 V

Configuration:

Maximum Gate-Emitter Voltage:

20 V

JESD-30 Code:

R-PUFM-X4

No. of Elements:

1

No. of Terminals:

4

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Peak Reflow Temperature (C):

NOT SPECIFIED

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Reference Standard:

UL RECOGNIZED

Sub-Category:

Insulated Gate BIP Transistors

Surface Mount:

NO

Terminal Form:

UNSPECIFIED

Terminal Position:

UPPER

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Transistor Application:

POWER CONTROL

Transistor Element Material:

SILICON

Nominal Turn Off Time (toff):

350 ns

Nominal Turn On Time (ton):

110 ns

Maximum VCEsat:

2.1 V

Trade Compliance

IXA70I1200NA Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

IXYS Corporation

IXYS is now part of Littlefuse. Together, IXYS and Littelfuse will leverage their combined technology portfolios and expertise to enhance customer value.Headquartered in Milpitas, CA, and Leiden, Netherlands, IXYS has gained a worldwide reputation as a premier power semiconductor manufacturer. Its diversified product base of specialized power semiconductors, integrated circuits and RF power is utilized by more than 2500 customers worldwide, ranging across industrial, transportation, telecommunications, computer, medical, consumer and clean tech markets. Learn more about IXYS’ 30-year history, its founder Dr. Nathan Zommer, its divisions and current growth.

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