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APT85GR120JD60

Microchip Technology

APT85GR120JD60 by Microchip Technology

APT85GR120JD60 by Microchip Technology is an N-CHANNEL IGBT transistor with a max collector-emitter voltage of 1200V and a max power dissipation of 543W. Ideal for motor control applications, it has a nominal turn-off time of 445ns and operates in temperatures ranging from -55 to 150°C.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

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Vyrian

USA . 4,264 parts In-Stock

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VNN

France . 1,092 parts In-Stock

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Nova Conductors

Japan . 31 parts In-Stock

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Aztec Data Supply Inc.

USA . 3,027 parts In-Stock

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$0.302

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$0.302

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Corohmni

South Africa . 430 parts In-Stock

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$1.676

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AZTECH Wire

Italy . 780 parts In-Stock

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$13.179

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Ampacity Inc.

Singapore . 11 parts In-Stock

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$34.510

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$34.510

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Semicontronic

India . 11 parts In-Stock

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$34.510

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$33.647

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$33.475

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11

$34.510

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$33.475

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Component Stockers USA

USA . 2 parts In-Stock

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$39.850

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Microchip USA

USA . 8,370 parts In-Stock

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$93.380

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Argo Parts USA

USA . 2,675 parts In-Stock

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West Coast Incorporated

USA . 1,462 parts In-Stock

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Continental Prestige Electronics

USA . 1,129 parts In-Stock

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Perfect Parts

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Bastille Electronics

Australia . 40 parts In-Stock

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Overview

Unlock the full potential of your applications with the APT85GR120JD60 by Microchip Technology. As a leading manufacturer in the industry, Microchip Technology delivers top-quality Insulated Gate Bipolar Transistors (IGBT) that are perfect for motor control. With a single configuration and built-in diode, this product offers exceptional value and performance. Experience seamless operation and enhanced efficiency with a maximum power dissipation of 543 W and a collector-emitter voltage of 1200 V. Trust Microchip Technology to power your projects with reliability and precision.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the internal components, ensuring a longer lifespan for the product.

Polarity or Channel Type: N-CHANNEL

Allows for efficient current flow and control, making it suitable for motor control applications.

Configuration: SINGLE WITH BUILT-IN DIODE

Simplifies the circuit design and reduces the need for additional components, saving space and cost.

Transistor Application: MOTOR CONTROL

Specifically designed for motor control applications, ensuring optimal performance in that specific use case.

Maximum Power Dissipation (Abs): 543 W

Can handle high power levels without risk of damage, making it suitable for demanding industrial applications.

Maximum Operating Temperature: 150 °C

Can operate in high temperature environments, increasing the versatility of the product.

Maximum Collector-Emitter Voltage: 1200 V

Can handle high voltage levels, making it suitable for high-power applications.

Maximum Collector Current (IC): 116 A

Can handle high current levels, allowing for efficient motor control and power handling.

Nominal Turn On Time (ton): 113 ns

Fast turn on time ensures quick response and efficient operation in motor control applications.

Reference Standard: UL RECOGNIZED

Complies with safety and quality standards, ensuring reliability and peace of mind for users.

Technical Specifications

Insulated Gate Bipolar Transistors (IGBT) APT85GR120JD60 attributes and parameters. Explore more Insulated Gate Bipolar Transistors (IGBT) devices from Microchip Technology

Specs

Case Connection:

ISOLATED

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

1200 V

Maximum Gate-Emitter Threshold Voltage:

6.5 V

Maximum Gate-Emitter Voltage:

30 V

JESD-30 Code:

R-PUFM-X4

No. of Elements:

1

No. of Terminals:

4

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Peak Reflow Temperature (C):

NOT SPECIFIED

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Reference Standard:

UL RECOGNIZED

Surface Mount:

NO

Terminal Form:

UNSPECIFIED

Terminal Position:

UPPER

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Transistor Application:

MOTOR CONTROL

Transistor Element Material:

SILICON

Nominal Turn Off Time (toff):

445 ns

Nominal Turn On Time (ton):

113 ns

Trade Compliance

APT85GR120JD60 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Microchip Technology

Microchip Technology Incorporated is a leading provider of integrated circuit (IC) solutions for the global market. Founded in 1989, the company designs, manufactures, tests and markets state-of-the-art microcontrollers and analog devices for use in a wide array of electronics applications, such as the automotive industry, consumer electronics and industrial automation. Through its world-class production processes and technologies, Microchip Technology has become an innovator of semiconductor solutions that enable customers to maximize their performance while streamlining costs.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President and CEO

Ganesh Moorthy

Executive Chair

Steve Sanghi

CFO, Senior VP

J. Eric Bjornholt

Manufacturer fab locations 9

Fab name Location Fab Initiation Wafer Capacity

Fab 5 - Colorado

Fabrication

Fab Initiation

1995

USA

Colorado Springs

Wafer Capacity

70,000

1995

70,000

Santa Clara

Fabrication

Fab Initiation

1990

USA

Santa Clara

Wafer Capacity

1,290

1990

1,290

Lawrence

Fabrication

Fab Initiation

1989

USA

Lawrence

Wafer Capacity

5,000

1989

5,000

Fab 4 - Gresham

Fabrication

Fab Initiation

1988

USA

Gresham

Wafer Capacity

50,000

1988

50,000

Fab 2 - Tempe

Fabrication

Fab Initiation

1994

USA

Tempe

Wafer Capacity

30,000

1994

30,000

Beverly

Fabrication

Fab Initiation

1985

USA

Beverly

Wafer Capacity

2,000

1985

2,000

Lowell

Fabrication

Fab Initiation

1986

USA

Lowell

Wafer Capacity

15,000

1986

15,000

Garden Grove

Fabrication

Fab Initiation

1985

USA

Garden Grove

Wafer Capacity

12,000

1985

12,000

New Fab - Gresham

Fabrication

Fab Initiation

2024

USA

Gresham

Wafer Capacity

2024

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